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99% 2N 99.9% 3N     99.99% 4N   99.999% 5N     99.9999% 6N 

Thin Film Using Sputtering Targets
AE Thin Film™

With the advancement of microelectronics beginning in the 1960s, the need for thin film products for electronic and semiconductor layers lead to the development of the "sputtering" on of layers using physical vapor deposition (PVD) on to a selected substrate from a "target" bearing the layer material. As advancements in sputtering technology were made; particularly in the type of sputtering equipment offered, sputtering of thin film layers found application in numerous other scientific and industrial fields, including optical and architectural glass, memory storage devises, tool coatings and, most recently, fuel cells and solar energy panels.

32.4 (A)/00.022


Hydrogen                                 Helium
Lithium Beryllium                     Boron Carbon Nitrogen Oxygen Fluorine Neon
Sodium Magnesium                     Aluminum Silicon Phosphorus Sulfur Chlorine Argon
Potassium Calcium Scandium Titanium Vanadium Chromium Manganese Iron Cobalt Nickel Copper Zinc Gallium Germanium Arsenic Selenium Bromine Krypton
Rubidium Strontium Yttrium Zirconium Niobium Molybdenum Technetium Ruthenium Rhodium Palladium Silver Cadmium Indium Tin Antimony Tellurium Iodine Xenon
Cesium Barium Lanthanum Hafnium Tantalum Tungsten Rhenium Osmium Iridium Platinum Gold Mercury Thallium Lead Bismuth Polonium Astatine Radon
                                   
    Cerium Praseodymium Neodymium Promethium Samarium Europium Gadolinium Terbium Dysprosium Holmium Erbium Thulium Ytterbium Lutetium    
    Thorium Protactinium Uranium Neptunium Plutonium Americium Curium Berkelium Californium Einsteinium Fermium Mendelevium Nobelium Lawerencium      

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American Elements specializes in producing high density ultra high purity (99.9% to 99.9999%) sputtering targets for all of these applications using both vacuum melt/casting and hot isostatic pressing (HIP) technology. Sputtering targets are available monoblock or bonded with dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devises as well as the latest process equipment, such as large area coating and flip-chip applications. Research sized targets are also produced as well as custom sizes and alloys. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP).

Applications for sputtering targets have continued to expand. The most recent uses are described below. When relevant, properties and latest research are also covered.

Sputtering Targets for Electronics and Semiconductors. The first commercial use for the sputtering target was in semiconductors and electronics for front end and back end packaging, diffusion barriers, compounds, phase change memory, IC interconnects, micro contacts, and in sensors, MEMs and LEDs. Sputtering targets of copper and copper alloys including copper-nickel, copper-chrome are manufactured for packaging and other applications, as well as, nickel and many nickel alloys including nickel-aluminum, nickel-vanadium, nickel-platinum, nickel-copper and nickel-chrome. Aluminum is available in its elemental form and alloyed with copper and silicon as aluminum-copper, aluminum-silicon and aluminum-copper-silicon. Elemental titanium is available up to 99.999% purity and alloyed in titanium-tungsten. The conductive and solder wetting properties of gold make it an important deposition material, including gold alloys such as gold-tin, gold-antimony, gold-silicon, gold-copper, and gold-germanium. Recent materials include Phase Change Alloys such as germanium-antimony alloyed with tellurium, silver, indium and platinum and transparent conductive oxides (TCO) for light emitting applications such as sensors and light emitting diodes (LED). These include indium-tin oxide (ITO) and zinc oxide doped with aluminum and other elements (ZnO). American Elements also produces ultra high purity sputtering targets for electronic applications including hafnium, molybdenum, silver, iridium, rhodium and ruthenium.

Anti-abrasive coatings for Wear Protection. Electroplating of tool, die, drilling and cutting tool active surfaces to protect against wear and extend life has given way in recent years to the deposition of these coating materials as a more cost effective alternative. Typical protective materials using sputtering targets include titanium, titanium-carbide, silicon carbide, boron carbide, aluminum, nickel, chromium and tungsten-carbide.

Magnetic Materials. The use of high strength magnets have found application is numerous industries including automotive, aerospace, biomedical imaging and auditory engineering. Sputtering targets of these advanced magnetic materials are manufactured by American Elements from samarium-cobalt and neodymium-iron-boron alloy.

Optical and Architectural Glass. The ability of certain elements to selectively absorb and emit highly specific wave length ranges and also reduce glare due to their high refractive index when deposited on a glass substrate resulted in the development of sputtering and evaporation materials of elemental rare earths, such as neodymium and dysprosium and many other optically active and anti-reflective (AR) materials. More recently, architectural glass for residential, commercial and office building applications has benefited from the availability of these same coatings.

Photovoltaic Solar Energy Panels. The three primary solar energy technologies, silicon based, Copper Indium Selenide (CIS) and Copper Indium Gallium Selenide (CIGS) are layered structures that require sputtering targets at several stages including certain transparent conductive oxides (TCO) such as indium tin oxide (ITO) and doped zinc oxide as the top electrode, molybdenum as the back plate, and antimony-telluride and zinc-telluride in CIS and CIG photovoltaic cells.

Solid Oxide Fuel Cells. Typical solid oxide fuel cell (SOFC) designs contain an electronically conductive low density cathode, a high density, ionically conductive electrolyte and an electronically conductive open air electrode. New technology is being developed for the deposition of these layers. Sputtering targets are produced by American Elements to meet the needs of each of these layers including Perovskite cathode materials including Lanthanum Strontium Manganite (LSM), Lanthanum Strontium Ferrite (LSF), Lanthanum Strontium Cobaltite Ferrite (LSCF), Lanthanum Strontium Chromite (LSC), and Lanthanum Strontium Gallate Magnesite (LSGM) with doping levels and other parameters to customer specifications and ionically conductive electrolytes including YSZ, SCZ (Scandium doped Zirconia), Samarium doped Ceria, Gadolinium doped Ceria and Yttrium doped Ceria. These fuel cells materials are marketed under the trademark AE Fuel CellsT.

Data Storage. Sputtering targets are now essential to the coating and manufacturing of optical storage devices such as CDs and DVDs to provide both wear protection and reflectivity.





Chloride, Nitrate, etc. Submicron & Nanopowder Tolling Foil Sputtering Target Crystal Growth Advanced Materials Information Center

 

Recent Research & Development for Thin Film

  • Tuning of Refractive Indices and Optical Band Gaps in Oxidized Silicon Quantum Dot Solids. Choi JK, Jang S, Sohn H, Jeong HD. J Am Chem Soc. 2009 Nov 13. [Epub ahead of print] PMID: 19911790 [PubMed - as supplied by publisher]

  • In Situ NMR Spectroelectrochemistry of Higher Sensitivity by Large Scale Electrodes. Klod S, Ziegs F, Dunsch L. Anal Chem. 2009 Nov 13. [Epub ahead of print] PMID: 19911777 [PubMed - as supplied by publisher]

  • Nucleobase Lesions and Strand Breaks in Dry DNA Thin Film Selectively Induced by Monochromatic Soft X-rays. Fujii K, Shikazono N, Yokoya A. J Phys Chem B. 2009 Nov 12. [Epub ahead of print] PMID: 19908849 [PubMed - as supplied by publisher]

  • Spin-assembled layer-by-layer films of weakly charged polyelectrolyte multilayer. Lee YM, Park DK, Choe WS, Cho SM, Han GY, Park J, Yoo PJ. J Nanosci Nanotechnol. 2009 Dec;9(12):7467-72. PMID: 19908810 [PubMed - in process]

  • Effect of multi-polar magnetic field on the properties of nanocrystalline silicon thin film deposited by internal-type inductively coupled plasma. Kim HB, Lee HC, Kim KN, Kang SK, Yeom GY. J Nanosci Nanotechnol. 2009 Dec;9(12):7440-5. PMID: 19908805 [PubMed - in process]

  • BaTiO3 doped Na0.5K0.5NbO3 thin films deposited by using eclipse shutter enhanced pulsed laser deposition method. Choi JS, Hwang IR, Hong SH, Oh GT, Choi JA, Jeon SH, Kang SO, Yalishev VSh, Park BH, Choi CH, Ahn CW, Nahm S, Ahn SJ. J Nanosci Nanotechnol. 2009 Dec;9(12):7354-8. PMID: 19908787 [PubMed - in process] Related articles

  • Frictional characteristics of nano-scale mesoporous SiO2 thin film formed by sol-gel and self-assembly method. Lee GS, Shin YH, Kim JM, Kim TS, Lee YZ. J Nanosci Nanotechnol. 2009 Dec;9(12):7340-4. PMID: 19908784 [PubMed - in process]

  • Surface plasmon resonance investigation of a copolymer containing spiroxazine. Chen H, Lee J, Cho CR, Kim SH, Kim JH, Koh K. J Nanosci Nanotechnol. 2009 Dec;9(12):7195-8. PMID: 19908756 [PubMed - in process]

  • Electrical property of organic thin films for power device. Choi YS, Jang GS, Hong KJ, Lee KS. J Nanosci Nanotechnol. 2009 Dec;9(12):7108-12. PMID: 19908738 [PubMed - in process]

  • Micropatterning of poly(vinyl pyrrolidone)/silver nanoparticle thin films by ion irradiation. Choi JH, An MY, Lee BM, Kim DK, Jung CH, Hwang IT, Lee JS, Nho YC, Shin K, Huh KM, Hong SK. J Nanosci Nanotechnol. 2009 Dec;9(12):7090-3. PMID: 19908734 [PubMed - in process]

  • Energy transfer in a pi-conjugated liquid crystalline molecule with two chromophores of rigid biphenyl core and pyrene head moieties. Kim YH, Yoon DK, Jeong HS, Yoon EK, Jung HT. J Nanosci Nanotechnol. 2009 Dec;9(12):6968-73. PMID: 19908708 [PubMed - in process]

  • Vapor-phase molecular layer deposition of self-assembled multilayers for organic thin-film transistor. Lee BH, Lee KH, Im S, Sung MM. J Nanosci Nanotechnol. 2009 Dec;9(12):6962-7. PMID: 19908707 [PubMed - in process]

  • The electro-optical behavior of liquid crystal molecules on the surface of SiO2 inorganic thin films. Sung SJ, Yang KJ, Kim DH, Do YS, Kang JK, Choi BD. J Nanosci Nanotechnol. 2009 Dec;9(12):6938-42. PMID: 19908702 [PubMed - in process]

  • Ultra fast UV-photo detector based on single-walled carbon nanotube/PEDOT-PSS composites. Najeeb CK, Lee JH, Chang J, Kang WS, Kim JH. J Nanosci Nanotechnol. 2009 Dec;9(12):6928-33. PMID: 19908700 [PubMed - in process]

  • Organic thin film transistors using a polyhedral oligomeric silsesquioxane-based photo-patternable insulating material. Cho HD, Jung CH, Park MJ, Shim HK, Hwang DH, Lee C. J Nanosci Nanotechnol. 2009 Dec;9(12):6923-7. PMID: 19908699 [PubMed - in process]

  • Scanning probe microscopy: instrumentation and applications on thin films and magnetic multilayers. Karoutsos V. J Nanosci Nanotechnol. 2009 Dec;9(12):6783-98. PMID: 19908681 [PubMed - in process]

  • Novel nanostructures and optical properties of silver doped sodium phosphate thin films. Singh P, Deepa M, Srivastava AK, Sood KN, Kar M. J Nanosci Nanotechnol. 2009 Nov;9(11):6637-42. PMID: 19908577 [PubMed - in process]

  • Nanotextured organic light emitting diode based chemical sensor. Devabhaktuni S, Prasad S. J Nanosci Nanotechnol. 2009 Nov;9(11):6299-306. PMID: 19908526 [PubMed - in process]

  • Formation and characterization of sub-nanometer scale cF8 Ge precipitates in Si-based amorphous matrix. Louzguine-Luzgin DV, Sharma P, Fukuhara M, Dmytruk A, Inoue A. J Nanosci Nanotechnol. 2009 Oct;9(10):5865-9. PMID: 19908466 [PubMed - in process]

  • Hydrothermal preparation and characterization of nanocrystalline porous tin dioxide thin films. Zhang Y, Guo M, Zhang M, Wang X. J Nanosci Nanotechnol. 2009 Oct;9(10):5770-5. PMID: 19908451 [PubMed - in process]

 


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