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(3-Aminopropyl)trimethoxysilane
H2N(CH2)3Si(OCH3)3
13822-56-5
Product Product Code Order or Specifications
(2N) 99% (3-Aminopropyl)trimethoxysilane      SI-OM-02 Contact American Elements
(3N) 99.9% (3-Aminopropyl)trimethoxysilane SI-OM-03 Contact American Elements
(4N) 99.99% (3-Aminopropyl)trimethoxysilane SI-OM-04 Contact American Elements
(5N) 99.999% (3-Aminopropyl)trimethoxysilane SI-OM-05 Contact American Elements
(3-Aminopropyl)trimethoxysilane is generally immediately available in most volumes. High purity, submicron and nanopowder forms may be considered.American Elements produces to many standard grades when applicable, including Mil Spec (military grade); ACS, Reagent and Technical Grade; Food, Agricultural and Pharmaceutical Grade; Optical Grade, USP and EP/BP (European Pharmacopoeia/British Pharmacopoeia)and follows applicable ASTM testing standards.Typical and custom packaging is available. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.

Silicon(Si) atomic and molecular weight, atomic number and elemental symbolSilicon is a Block P, Group 14, Period 3 element. The number of electrons in each of Silicon's shells is 2, 8, 4 and its electronic configuration is [Ne] 3s2 3p2. In its elemental form silicon's CAS number is 7440-21-3. The silicon atom has a radius of 117.6.pm and it's Van der Waals radius is 210.pm. Silicon is not toxic but can cause chronic respiratory problems if inhaled as a fine silica or silicate dust. Asbestos silicates are carcinogenic. Silicon isElemental Silicon one of man's most useful elements. It makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, being exceeded only by oxygen. The Czochralski process is commonly used to produce single crystals of silicon used for solid-state or semiconductor devices. Silica, as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Silicon is available as metal and compounds with purities from 99% to 99.9999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. Ultra high purity silicon can be doped with boron, gallium, phosphorus , or arsenic to produce silicon for use in Silicon Bohr Moleculetransistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics and space-age industries. Hydrogenated amorphous silicon has shown promise in producing economical cells for converting solar energy into electricity. Silcones are important products of silicon. They range from liquids to hard, glasslike solids with many useful properties. Silicon was first discovered by Jons Berzelius in 1823. The name Silicon originates from the Latin word "silex" which means flint or hard stone. See Silicon research below.

Formula CAS No. Appearance Molecular Weight
H2N(CH2)3Si(OCH3)3 13822-56-5   179.29
PRODUCT CATALOG Silicon Products News Foil Submicron & Nanopowder Tolling Ultra High Purity Sputtering Target Crystal Growth Rod, Plate, Powder, etc. Home

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Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.

 

 

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Recent Research & Development for Silicon

  • Desymmetrization of 7-dimethylphenylsilylcycloheptatriene. Towards the synthesis of new aminocycloheptitols. Girard E, Desvergnes V, Tarnus C, Landais Y. Org Biomol Chem. 2010 Oct 13. [Epub ahead of print]PMID: 20941452 [PubMed - as supplied by publisher]Related citations

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  • Wavelength-tunable excited-state absorption and optical limiting effects in the Q band region based on silicon phthalocyanine oligomers. Ishii K, Sakai N. Phys Chem Chem Phys. 2010 Oct 13. [Epub ahead of print]PMID: 20941425 [PubMed - as supplied by publisher]Related citations

  • Role of near-field enhancement in plasmonic laser nanoablation using gold nanorods on a silicon substrate. Harrison RK, Ben-Yakar A. Opt Express. 2010 Oct 11;18(21):22556-71. doi: 10.1364/OE.18.022556.PMID: 20941153 [PubMed - in process]Related citations

  • Ultrafast all-optical modulator with femtojoule absorbed switching energy in silicon-on-insulator. Schönenberger S, Stöferle T, Moll N, Mahrt RF, Dahlem MS, Wahlbrink T, Bolten J, Mollenhauer T, Kurz H, Offrein BJ. Opt Express. 2010 Oct 11;18(21):22485-96. doi: 10.1364/OE.18.022485.PMID: 20941147 [PubMed - in process]Related citations

  • The observation of super-long range surface plasmon polaritons modes and its application as sensory devices. Zhang XL, Song JF, Lo GQ, Kwong DL. Opt Express. 2010 Oct 11;18(21):22462-70. doi: 10.1364/OE.18.022462.PMID: 20941145 [PubMed - in process]Related citations

  • Silicon photonic temperature sensor?employing a ring resonator manufactured?using a standard CMOS process. Kim GD, Lee HS, Park CH, Lee SS, Lim BT, Bae HK, Lee WG. Opt Express. 2010 Oct 11;18(21):22215-21. doi: 10.1364/OE.18.022215.PMID: 20941123 [PubMed - in process]Related citations

  • Highly efficient nonlinearity reduction in silicon-on-insulator waveguides using vertical slots. Yue Y, Zhang L, Wang J, Beausoleil RG, Willner AE. Opt Express. 2010 Oct 11;18(21):22061-6. doi: 10.1364/OE.18.022061.PMID: 20941107 [PubMed - in process]Related citations

  • Quantitative evaluation of boron-induced disorder in multilayers containing silicon nanocrystals in an oxide matrix designed for photovoltaic applications. Zatryb G, Podhorodecki A, Hao XJ, Misiewicz J, Shen YS, Green MA. Opt Express. 2010 Oct 11;18(21):22004-9. doi: 10.1364/OE.18.022004.PMID: 20941101 [PubMed - in process]Related citations

  • Discrete parametric band conversion in silicon for mid-infrared applications. Tien EK, Huang Y, Gao S, Song Q, Qian F, Kalyoncu SK, Boyraz O. Opt Express. 2010 Oct 11;18(21):21981-9. doi: 10.1364/OE.18.021981.PMID: 20941099 [PubMed - in process]Related citations

  • Split of surface plasmon resonance of gold nanoparticles on silicon substrate: a study of dielectric functions. Zhu S, Chen TP, Cen ZH, Goh ES, Yu SF, Liu YC, Liu Y. Opt Express. 2010 Oct 11;18(21):21926-31. doi: 10.1364/OE.18.021926.PMID: 20941092 [PubMed - in process]Related citations

  • Solution-processed photodetectors from colloidal silicon nano/micro particle composite. Tu CC, Tang L, Huang J, Voutsas A, Lin LY. Opt Express. 2010 Oct 11;18(21):21622-7. doi: 10.1364/OE.18.021622.PMID: 20941060 [PubMed - in process]Related citations

  • FDTD modeling of anisotropic nonlinear optical phenomena in silicon waveguides. Dissanayake CM, Premaratne M, Rukhlenko ID, Agrawal GP. Opt Express. 2010 Sep 27;18(20):21427-48. doi: 10.1364/OE.18.021427.PMID: 20941040 [PubMed - in process]Related citations

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  • Tunable photonic crystal based on?capillary attraction and repulsion. Chan CT, Yeh JA. Opt Express. 2010 Sep 27;18(20):20894-9. doi: 10.1364/OE.18.020894.PMID: 20940984 [PubMed - in process]Related citations

  • Tailoring the dispersion behavior of silicon nanophotonic slot waveguides. Mas S, Caraquitena J, Galán JV, Sanchis P, Martí J. Opt Express. 2010 Sep 27;18(20):20839-44. doi: 10.1364/OE.18.020839.PMID: 20940978 [PubMed - in process]Related citations

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  • Flattened dispersion in silicon slot waveguides. Zhang L, Yue Y, Beausoleil RG, Willner AE. Opt Express. 2010 Sep 13;18(19):20529-34. doi: 10.1364/OE.18.020529.PMID: 20940946 [PubMed - in process]Related citations

     

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