American Elements
Bismuth Selenide
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99.999% Bismuth Selenide Powder
BI-SE-05-P
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99.999% Bismuth Selenide Ingot
BI-SE-05-I
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99.999% Bismuth Selenide Chunk
BI-SE-05-CK
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99.999% Bismuth Selenide Lump
BI-SE-05-L
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99.999% Bismuth Selenide Sputtering Target
BI-SE-05-ST
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Bismuth Selenide
is a crystalline solid used as a semiconductor and in photo optic applications. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.

Bismuth is a Block P, Group 15, Period 6 element. The electronic configuration is [Xe] 4f14 5d10 6s2 6p3. In its elemental form bismuth's CAS number is 7440-69-9. The bismuth atom has a radius of 154.5.pm and it's Van der Waals radius is 200.pm. Bismuth is the most diamagnetic of all metals, and the thermal conductivity is lower than any metal, except mercury. It has a high electrical resistance, and has the highest Hall Effect of any metal (i.e., greatest increase in electrical resistance when placed in a magnetic field). Bismuth expands on solidification. This property makes bismuth alloys particularly suited to the making of sharp castings of objects subject to damage by high temperatures. With other metals such as tin, cadmium , etc., bismuth forms low-melting alloys which are extensively used for safety devices in fire detection and extinguishing systems. Bismuth is used in producing malleable irons and is finding use as a catalyst for making acrylic fibers. When bismuth is heated in air it burns with a blue flame, forming yellow fumes of the oxide. The metal is also used as a thermocoupling material, and has found application as a carrier for 235 U or 233 U fuel in nuclear reactors. Its soluble salts are characterized by forming unsoluble basic salts on the addition of water, a property sometimes used in detection work. Bismuth oxychloride is used extensively in cosmetics.

Selenium is a Block P, Group 16, Period 4 element. The electronic configuration is [Ar] 3d10 4s2 4p4. In its elemental form selenium's CAS number is 7782-49-2. The selenium atom has a radius of 116.pm and it's Van der Waals radius is 190.pm. Selenium exhibits both photovoltaic action, where light is converted directly into electricity, and photoconductive action, where the electrical resistance decreases with increased illumination. These properties make selenium useful in the production of photocells and exposure meters for photographic use, as well as solar cells. Below its melting point, selenium is a p-type semiconductor and has many uses in electronic and solid-state applications. Selenium is available as metal and compounds with purities from 99% to 99.9999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. Selenium was first discovered by Jons Berzelius in 1817.

American Elements semi conducting materials are crystal structures produced from ultra high purity starting materials synthesized by our high purity production facility which includes several large electric muffle furnaces, a tube furnace for hydrogen reduction, 50 gallon glass-lined Pfaudler reactors supported by our analytical laboratory containing X-ray diffraction, SEM, AA, BET surface area, and ICP Spectrometry for trace metals analysis. See a discussion of American Elements Ultra High Purity and Analytical capabilities. See Crystal Growth for processes used to fabricate semiconductor materials, which include:

  • Crystal "pulling" by the Czochaiski method for production of semiconductor materials
  • Flux growth and gradient freeze
  • Directional solidification of fluorites using both the Bridgman-Stockbarger and float zoning techniques
PRODUCT CATALOG Submicron & Nanopowder Tolling Ultra High Purity Sputtering Target Crystal Growth Rod, Plate, Powder, etc.
 
 
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Recent Research & Development for Bismuth

  • A Blue Homoleptic Bismuth-Nitrogen Cation. Angew Chem Int Ed Engl. 2008 Oct 31. [Epub ahead of print] No abstract available.

  • New Insights into the Chemical and Electronic Properties of C69M [M = In(-), Tl(-), Sb(+), Bi(+)] Species. J Phys Chem A. 2008 Oct 31. [Epub ahead of print]

  • Differential pulse anodic stripping voltammetry detection of metallothionein at bismuth film electrodes. Talanta. 2006 Jul 15;69(5):1162-5. Epub 2006 Jan 19.

  • Catalytic adsorptive stripping voltammetric measurements of trace vanadium at bismuth film electrodes. Talanta. 2006 Jun 15;69(4):914-7. Epub 2005 Dec 20.

  • Determination of trace aluminium by adsorptive stripping voltammetry on a preplated bismuth-film electrode in the presence of cupferron. Talanta. 2006 Jan 15;68(3):1013-9. Epub 2005 Aug 22.

  • RETRACTED: Preconcentration and solid-phase extraction of beryllium, lead, nickel, and bismuth from various water samples using 2-propylpiperidine-1-carbodithioate with flame atomic absorption spectrometry (FAAS). Talanta. 2006 Jan 15;68(3):735-40. Epub 2005 Jun 28.

  • Coprecipitation with yttrium phosphate as a separation technique for iron(III), lead, and bismuth from cobalt, nickel, and copper matrices. Talanta. 2005 Jul 15;67(1):90-7. Epub 2005 Mar 23.

  • Resolving the copper interference effect on the stripping chronopotentiometric response of lead(II) obtained at bismuth film screen-printed electrode. Talanta. 2005 Jun 15;66(5):1089-93.

  • Simultaneous determination of trace arsenic, antimony, bismuth and selenium in biological samples by hydride generation-four-channel atomic fluorescence spectrometry. Talanta. 2005 Mar 15;65(5):1318-25. Epub 2004 Dec 10.

  • Quantitative determination of zinc in milkvetch by anodic stripping voltammetry with bismuth film electrodes. Talanta. 2005 Feb 28;65(4):1052-5. Epub 2004 Nov 2.

  • Simultaneous determination of antimony and bismuth by beta-correction spectrophotometry and an artificial neural network algorithm. Talanta. 2005 Feb 15;65(3):692-9.

  • Manganese detection in marine sediments: anodic vs. cathodic stripping voltammetry. Talanta. 2005 Jan 30;65(2):423-9.

  • Catalytic adsorptive stripping determination of trace chromium (VI) at the bismuth film electrode. Talanta. 2005 Jan 15;65(1):144-8.

  • Flow injection determination of bismuth in urine by successive retention of Bi(III) and tetrahydroborate(III) on an anion-exchange resin and hydride generation atomic absorption spectrometry. Talanta. 2004 Dec 15;64(5):1309-16.

  • Validation of bismuth film electrode for determination of cobalt and cadmium in soil extracts using ICP-MS. Talanta. 2004 Jul 8;63(4):849-55.

  • Anodic stripping voltammetric determination of bismuth after solid-phase extraction using amberlite XAD-2 resin modified with 2-(5-bromo-2-pyridylazo)-5-diethylaminophenol. Talanta. 2004 Jun 17;63(3):797-801.

  • Bismuth determination in environmental samples by hydride generation-electrothermal atomic absorption spectrometry. Talanta. 2003 Dec 4;61(5):633-642.

  • A study of bismuth-film electrodes for the detection of trace metals by anodic stripping voltammetry and their application to the determination of Pb and Zn in tapwater and human hair. Talanta. 2003 Dec 4;61(5):603-10.

  • The use of 2-2-thiazolylazo-p-cresol to minimize the interference of Ni and Cu for the bismuth determination in alloys by hydride generation atomic absorption spectrometry. Talanta. 2003 Dec 4;61(5):597-602.

  • Spectrophotometric determination of bismuth in water samples after preconcentration of its thiourea-bromide ternary complex on activated carbon. Talanta. 2003 Jul 4;60(4):831-8.

 

 

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