American Elements

 

Boron Oxide
B2O3
1303-86-2

Product Product Code Order or Specifications
(2N) 99% Boron Oxide B-OX-02 Contact American Elements
(3N) 99.9% Boron Oxide B-OX-03 Contact American Elements
(4N) 99.99% Boron Oxide B-OX-04 Contact American Elements
(5N) 99.999% Boron Oxide B-OX-05 Contact American Elements

 

CHEMICAL
IDENTIFICATION
Formula CAS No. PubChem
SID
PubChem CID MDL No. EC No IUPAC Name Beilstein
Re. No.
SMILES
Identifier
InChI
Identifier
InChI
Key
B2O3 1303-86-2 24866687   MFCD00191837       O=BOB=O InChI=1S/B2O3/c3-1-5-2-4 InChI=1S/B2O3/c3-1-5-2-4

Compound Formula Mol. Wt. Appearance Density

Exact Mass

Monoisotopic Mass Charge MSDS
B2O3 69.62
White Crystalline Solid
2.46 g/cm3 42.0448 g/mol 70.003356 Da 0 Safety Data Sheet


Oxide IonBoron Oxide is a highly insoluble thermally stable Boron source suitable for glass, optic and ceramic applications. Oxide compounds are not conductive to electricity. However, certain perovskite structured oxides are electronically conductive finding application in the cathode of solid oxide fuel cells and oxygen generation systems. They are compounds containing at least one oxygen anion and one metallic cation. They are typically insoluble in aqueous solutions (water) and extremely stable making them useful in ceramic structures as simple as producing clay bowls to advancHigh Purity (99.999%) Boron Oxide (B2O3) Powdered electronics and in light weight structural components in aerospace and electrochemical applications such as fuel cells in which they exhibit ionic conductivity. Metal oxide compounds are basicanhydrides and can therefore react with acids and with strong reducing agents in redox reactions. Boron Oxide is also available in pellets, pieces, powder, sputtering targets, tablets, andnanopowder (from American Elements' nanoscale production facilities). See Nanotechnology for more nanotechnology applications information. Boron Oxide is generally immediately available in most volumes. Ultra high purity, high purity, submicron and nanopowder forms may be considered. Additional technical, research and safety (MSDS) information is available.

Boron(B) atomic and molecular weight, atomic number and elemental symbolBoron is a Block P, Group 13, Period 2 element. The number of electrons in each of Boron's shells is 2, 3 and its electronic configuration is [He] 2s2 2p1. In its elemental form boron's CAS number is 7440-42-8. The boron atom has a radius of 79.5.pm and it's Van der Waals radius is 200.pm. Boron has an energy band gap of 1.50 to 1.56 eV, which is higher than that of either silicon or germanium. Optical characteristics include transmitting portions of the infrared. Boron is a poor conductor of electricity at room temperature but a good conductor at high temperature. Boron in its elemental form is not toxic. Amorphous Elemental Boronboron is used in pyrotechnic flares to provide a distinctive green color, and in rockets as an igniter Boric acid is also an important boron compound with major markets in textile products. Boron compounds are also extensively used in the manufacture of borosilicate Boron Bohr Modelglasses. The isotope Boron-10 is used as a control for nuclear reactors, as a shield for nuclear radiation, and in instruments used for detecting neutrons. Boron nitride has remarkable properties and can be used to make a material as hard as diamond. The nitride also behaves like an electrical insulator but conducts heat like a metal. Boron also has lubricating properties similar to graphite. Boron was first discovered by Sir Humphry Davy and J.L Gay-Lussac in 1808. The name Boron originates from a combination of carbon and the Arabic word 'buraqu meaning borax. See Boron research below.

American Elements semi conducting materials are crystal structures produced from ultra high purity starting materials synthesized by our high purity production facility which includes several large electric muffle furnaces, a tube furnace for hydrogen reduction, 50 gallon glass-lined Pfaudler reactors supported by our analytical laboratory containing X-ray diffraction, SEM, AA, BET surface area, and ICP Spectrometry for trace metals analysis. See a discussion of American Elements Ultra High Purity and Analytical capabilities. See Crystal Growth for processes used to fabricate semiconductor materials, which include:

  • Crystal "pulling" by the Czochaiski method for production of semiconductor materials
  • Flux growth and gradient freeze
  • Directional solidification of fluorites using both the Bridgman-Stockbarger and float zoning techniques

Have a Question? Ask a Chemical Engineer or Material Scientist   Request an MSDS or Certificate of Analysis

 
Safety &
Handling
  Exclamation Mark-Acute Toxicity
Signal Word Hazard Statements Hazard Codes Risk Codes Safety Precautions RTECS No. Transport Information WGK Germany
Warning H315-H319-H335 Xi 36/37/38 26-36     3

 

Synonyms for Boron Oxide Include:


Boric anhydride
Boric oxide
Keto-ketaboranyloxy-borane
Diboron trioxide
Boron trioxide
Dioxodiboroxane
Boron anhydride
borane, 1,1'-oxybis[1-oxo-
Oxo-oxoboranyloxy-borane

 


Customers for this product have also looked at:
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Boron Chloride Boron Metal Boron Oxide Boron Oxide Pellets Boron Phosphate
Boron Powder Boron Foil Boron Sputtering Target Nickel Silicon Boron Alloy Boron NanoPowder



 


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Recent Research & Development for Boron



  • Expression of the Arabidopsis Borate Efflux Transporter Gene, AtBOR4, in Rice Affects the Xylem Loading of Boron and Tolerance to Excess Boron. Kajikawa M, Fujibe T, Uraguchi S, Miwa K, Fujiwara T. Biosci Biotechnol Biochem. 2011 Dec 7. [Epub ahead of print] PMID: 22146734 [PubMed - as supplied by publisher]

  • Cl-BODIPYs: a BODIPY class enabling facile B-substitution. Lundrigan T, Crawford SM, Cameron TS, Thompson A. Chem Commun (Camb). 2011 Dec 6. [Epub ahead of print] PMID: 22146671 [PubMed - as supplied by publisher]

  • Size-Dependent Electrocatalytic Activity of Gold Nanoparticles on HOPG and Highly Boron-Doped Diamond Surfaces. Brülle T, Ju W, Niedermayr P, Denisenko A, Paschos O, Schneider O, Stimming U. Molecules. 2011 Dec 6;16(12):10059-77. PMID: 22146369 [PubMed - in process]

  • [Investigation of antiviral activity of adamantan boron derivaties on pandemic influenza virus models]. [No authors listed] Antibiot Khimioter. 2011;56(5-6):3-6. Russian. PMID: 22145224 [PubMed - in process]

  • Surface glycosylation of polysulfone membrane towards a novel complexing membrane for boron removal. Meng J, Yuan J, Kang Y, Zhang Y, Du Q. J Colloid Interface Sci. 2011 Nov 22. [Epub ahead of print] PMID: 22142998 [PubMed - as supplied by publisher]

  • Comparison of neutron spectrum measurement methods used for the epithermal beam of the LVR-15 research reactor. Viererbl L, Klupák V, Lahodová Z, Marek M. Appl Radiat Isot. 2011 Nov 25. [Epub ahead of print] PMID: 22138025 [PubMed - as supplied by publisher]

  • Catalytic Enantioselective 1,2-Diboration of 1,3-Dienes: Versatile Reagents for Stereoselective Allylation. Kliman LT, Mlynarski SN, Ferris GE, Morken JP. Angew Chem Int Ed Engl. 2011 Dec 1. doi: 10.1002/anie.201105716. [Epub ahead of print] PMID: 22135105 [PubMed - as supplied by publisher]

  • Graphene substrate-mediated catalytic performance enhancement of Ru nanoparticles: a first-principles study. Liu X, Yao KX, Meng C, Han Y. Dalton Trans. 2011 Dec 1. [Epub ahead of print] PMID: 22134739 [PubMed - as supplied by publisher]

  • C7H122+: A Prototype Hexacoordinate Carbonium Ion. Rasul G, Olah GA, Prakash GK. J Phys Chem A. 2011 Nov 30. [Epub ahead of print] PMID: 22129100 [PubMed - as supplied by publisher]

  • Measurements of beam current density and proton fraction of a permanent-magnet microwave ion source. Waldmann O, Ludewigt B. Rev Sci Instrum. 2011 Nov;82(11):113505. PMID: 22128974 [PubMed - in process]

  • Hydrogenation of fragment cations produced by femtosecond laser ablation of boron nitride. Kobayashi T, Matsuo Y. J Chem Phys. 2011 Nov 28;135(20):204504. PMID: 22128940 [PubMed - in process]

  • Spectroscopic and structural characterization of the CyNHC adduct of B2pin2 in solution and in the solid state. Kleeberg C, Crawford AG, Batsanov AS, Hodgkinson P, Apperley DC, Cheung MS, Lin Z, Marder TB. J Org Chem. 2011 Nov 29. [Epub ahead of print] PMID: 22126312 [PubMed - as supplied by publisher]

  • Novel retinoic Acid receptor alpha agonists for treatment of kidney disease. Zhong Y, Wu Y, Liu R, Li Z, Chen Y, Evans T, Chuang P, Das B, He JC. PLoS One. 2011;6(11):e27945. Epub 2011 Nov 18. PMID: 22125642 [PubMed - in process]

  • Structure, bonding, vibration and ideal strength of primitive-centered tetragonal boron nitride. Li Z, Gao F. Phys Chem Chem Phys. 2011 Nov 29. [Epub ahead of print] PMID: 22124285 [PubMed - as supplied by publisher]

  • Evaluation of the ions release / incorporation of the prototype S-PRG filler-containing endodontic sealer. Han L, Okiji T. Dent Mater J. 2011 Nov 25. [Epub ahead of print] PMID: 22123015 [PubMed - as supplied by publisher]

  • Kinetic Monte Carlo study on the suppression of boron transient enhanced diffusion with carbon pre-implant. Park SY, Sung KS, Won T. J Nanosci Nanotechnol. 2011 Jul;11(7):6594-8. PMID: 22121763 [PubMed - in process]

  • Synthesis of B4C nanobelts in porous SiC bodies. Jung IC, Kwon YD, Lee J, Min BK. J Nanosci Nanotechnol. 2011 Jul;11(7):6555-8. PMID: 22121755 [PubMed - in process]

  • Theoretical investigation of Ti-adsorbed graphene for hydrogen storage using the ab-initio method. Park HL, Yoo DS, Yi SC, Chung YC. J Nanosci Nanotechnol. 2011 Jul;11(7):6131-5. PMID: 22121672 [PubMed - in process]

  • Improvement of heavy dopant doped Ni-silicide using ytterbium interlayer for nano-scale MOSFETS with an ultra shallow junction. Shin HS, Oh SK, Kang MH, Li SG, Lee GW, Lee HD. J Nanosci Nanotechnol. 2011 Jul;11(7):5628-32. PMID: 22121582 [PubMed - in process]

  • A novel fluorescent probe for Au(iii)/Au(i) ions based on an intramolecular hydroamination of a Bodipy derivative and its application to bioimaging. Wang JB, Wu QQ, Min YZ, Liu YZ, Song QH. Chem Commun (Camb). 2011 Nov 28. [Epub ahead of print] PMID: 22121504 [PubMed - as supplied by publisher]

     

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