American Elements specializes in producing high purity Boron Oxide Sputtering Targets with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard Sputtering Targets for thin film are available monoblock or bonded with dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devises as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Research sized targets are also produced as well as custom sizes and alloys. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. We can also provide targets outside this range in addition to just about any size rectangular, annular, or oval target. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles (See also application discussion at Nanotechnology Information and at Quantum Dots) and in the form of solutions and organometallics. We also produce Boron Oxide as rods, powder and plates. Oxide compounds are not conductive to electricity. However, certain perovskite structured oxides are electronically conductive finding application in the cathode of solid oxide fuel cells and oxygen generation systems.American Elements produces to many standard grades when applicable, including Mil Spec (military grade); ACS, Reagent and Technical Grade; Food, Agricultural and Pharmaceutical Grade; Optical Grade, USP and EP/BP (European Pharmacopoeia/British Pharmacopoeia)and follows applicable ASTM testing standards.Typical and custom packaging is available. See safety data and research below and pricing/lead time above. Other shapes are available by request.
Boron is a Block P, Group 13, Period 2 element. The number of electrons in each of Boron's shells is 2, 3 and its electronic configuration is [He] 2s2 2p1. In its elemental form boron's CAS number is 7440-42-8. The boron atom has a radius of 79.5.pm and it's Van der Waals radius is 200.pm. Boron has an energy band gap of 1.50 to 1.56 eV, which is higher than that of either silicon or germanium. Optical characteristics include transmitting portions of the infrared. Boron is a poor conductor of electricity at room temperature but a good conductor at high temperature. Boron in its elemental form is not toxic. Amorphous boron is used in pyrotechnic flares to provide a distinctive green color, and in rockets as an igniter Boric acid is also an important boron compound with major markets in textile products. Boron compounds are also extensively used in the manufacture of borosilicate glasses. The isotope Boron-10 is used as a control for nuclear reactors, as a shield for nuclear radiation, and in instruments used for detecting neutrons. Boron nitride has remarkable properties and can be used to make a material as hard as diamond. The nitride also behaves like an electrical insulator but conducts heat like a metal. Boron also has lubricating properties similar to graphite. Boron was first discovered by Sir Humphry Davy and J.L Gay-Lussac in 1808. The name Boron originates from a combination of carbon and the Arabic word 'buraqu meaning borax. See Boron research below.
Expression of the Arabidopsis Borate Efflux Transporter Gene, AtBOR4, in Rice Affects the Xylem Loading of Boron and Tolerance to Excess Boron.
Kajikawa M, Fujibe T, Uraguchi S, Miwa K, Fujiwara T.
Biosci Biotechnol Biochem. 2011 Dec 7. [Epub ahead of print]
PMID:
22146734
[PubMed - as supplied by publisher]
Cl-BODIPYs: a BODIPY class enabling facile B-substitution.
Lundrigan T, Crawford SM, Cameron TS, Thompson A.
Chem Commun (Camb). 2011 Dec 6. [Epub ahead of print]
PMID:
22146671
[PubMed - as supplied by publisher]
Size-Dependent Electrocatalytic Activity of Gold Nanoparticles on HOPG and Highly Boron-Doped Diamond Surfaces.
Brülle T, Ju W, Niedermayr P, Denisenko A, Paschos O, Schneider O, Stimming U.
Molecules. 2011 Dec 6;16(12):10059-77.
PMID:
22146369
[PubMed - in process]
[Investigation of antiviral activity of adamantan boron derivaties on pandemic influenza virus models].
[No authors listed]
Antibiot Khimioter. 2011;56(5-6):3-6. Russian.
PMID:
22145224
[PubMed - in process]
Surface glycosylation of polysulfone membrane towards a novel complexing membrane for boron removal.
Meng J, Yuan J, Kang Y, Zhang Y, Du Q.
J Colloid Interface Sci. 2011 Nov 22. [Epub ahead of print]
PMID:
22142998
[PubMed - as supplied by publisher]
Comparison of neutron spectrum measurement methods used for the epithermal beam of the LVR-15 research reactor.
Viererbl L, Klupák V, Lahodová Z, Marek M.
Appl Radiat Isot. 2011 Nov 25. [Epub ahead of print]
PMID:
22138025
[PubMed - as supplied by publisher]
Catalytic Enantioselective 1,2-Diboration of 1,3-Dienes: Versatile Reagents for Stereoselective Allylation.
Kliman LT, Mlynarski SN, Ferris GE, Morken JP.
Angew Chem Int Ed Engl. 2011 Dec 1. doi: 10.1002/anie.201105716. [Epub ahead of print]
PMID:
22135105
[PubMed - as supplied by publisher]
Graphene substrate-mediated catalytic performance enhancement of Ru nanoparticles: a first-principles study.
Liu X, Yao KX, Meng C, Han Y.
Dalton Trans. 2011 Dec 1. [Epub ahead of print]
PMID:
22134739
[PubMed - as supplied by publisher]
C7H122+: A Prototype Hexacoordinate Carbonium Ion.
Rasul G, Olah GA, Prakash GK.
J Phys Chem A. 2011 Nov 30. [Epub ahead of print]
PMID:
22129100
[PubMed - as supplied by publisher]
Measurements of beam current density and proton fraction of a permanent-magnet microwave ion source.
Waldmann O, Ludewigt B.
Rev Sci Instrum. 2011 Nov;82(11):113505.
PMID:
22128974
[PubMed - in process]
Hydrogenation of fragment cations produced by femtosecond laser ablation of boron nitride.
Kobayashi T, Matsuo Y.
J Chem Phys. 2011 Nov 28;135(20):204504.
PMID:
22128940
[PubMed - in process]
Spectroscopic and structural characterization of the CyNHC adduct of B2pin2 in solution and in the solid state.
Kleeberg C, Crawford AG, Batsanov AS, Hodgkinson P, Apperley DC, Cheung MS, Lin Z, Marder TB.
J Org Chem. 2011 Nov 29. [Epub ahead of print]
PMID:
22126312
[PubMed - as supplied by publisher]
Novel retinoic Acid receptor alpha agonists for treatment of kidney disease.
Zhong Y, Wu Y, Liu R, Li Z, Chen Y, Evans T, Chuang P, Das B, He JC.
PLoS One. 2011;6(11):e27945. Epub 2011 Nov 18.
PMID:
22125642
[PubMed - in process]
Structure, bonding, vibration and ideal strength of primitive-centered tetragonal boron nitride.
Li Z, Gao F.
Phys Chem Chem Phys. 2011 Nov 29. [Epub ahead of print]
PMID:
22124285
[PubMed - as supplied by publisher]
Evaluation of the ions release / incorporation of the prototype S-PRG filler-containing endodontic sealer.
Han L, Okiji T.
Dent Mater J. 2011 Nov 25. [Epub ahead of print]
PMID:
22123015
[PubMed - as supplied by publisher]
Kinetic Monte Carlo study on the suppression of boron transient enhanced diffusion with carbon pre-implant.
Park SY, Sung KS, Won T.
J Nanosci Nanotechnol. 2011 Jul;11(7):6594-8.
PMID:
22121763
[PubMed - in process]
Synthesis of B4C nanobelts in porous SiC bodies.
Jung IC, Kwon YD, Lee J, Min BK.
J Nanosci Nanotechnol. 2011 Jul;11(7):6555-8.
PMID:
22121755
[PubMed - in process]
Theoretical investigation of Ti-adsorbed graphene for hydrogen storage using the ab-initio method.
Park HL, Yoo DS, Yi SC, Chung YC.
J Nanosci Nanotechnol. 2011 Jul;11(7):6131-5.
PMID:
22121672
[PubMed - in process]
Improvement of heavy dopant doped Ni-silicide using ytterbium interlayer for nano-scale MOSFETS with an ultra shallow junction.
Shin HS, Oh SK, Kang MH, Li SG, Lee GW, Lee HD.
J Nanosci Nanotechnol. 2011 Jul;11(7):5628-32.
PMID:
22121582
[PubMed - in process]
A novel fluorescent probe for Au(iii)/Au(i) ions based on an intramolecular hydroamination of a Bodipy derivative and its application to bioimaging.
Wang JB, Wu QQ, Min YZ, Liu YZ, Song QH.
Chem Commun (Camb). 2011 Nov 28. [Epub ahead of print]
PMID:
22121504
[PubMed - as supplied by publisher]
American Elements specializes in producing high purity Boron Oxide Sputtering Targets with the highest possible density 
and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard Sputtering Targets for thin film are available monoblock or bonded with dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devises as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Research sized targets are also produced as well as custom sizes and alloys. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. We can also provide targets outside this range in addition to just about any size rectangular, annular, or oval target. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles (See also application discussion at Nanotechnology Information and at Quantum Dots) and in the form of solutions and organometallics. We also produce Boron Oxide as rods, powder and plates. Oxide compounds are not conductive to electricity. However, certain perovskite structured oxides are electronically conductive finding application in the cathode of solid oxide fuel cells and oxygen generation systems.American Elements produces to many standard grades when applicable, including Mil Spec (military grade); ACS, Reagent and Technical Grade; Food, Agricultural and Pharmaceutical Grade; Optical Grade, USP and EP/BP (European Pharmacopoeia/British Pharmacopoeia)and follows applicable ASTM testing standards.Typical and custom packaging is available. See safety data and research below and pricing/lead time above. Other shapes are available by request.
Boron is a Block P, Group 13, Period 2 element. The number of electrons in each of Boron's shells is 2, 3 and its electronic configuration is [He] 2s2 2p1. In its elemental form boron's CAS number is 7440-42-8. The boron atom has a radius of 79.5.pm and it's Van der Waals radius is 200.pm. Boron has an energy band gap of 1.50 to 1.56 eV, which is higher than that of either silicon or germanium. Optical characteristics include transmitting portions of the infrared. Boron is a poor conductor of electricity at room temperature but a good conductor at high temperature. Boron in its elemental form is not toxic. Amorphous 
boron is used in pyrotechnic flares to provide a distinctive green color, and in rockets as an igniter Boric acid is also an important boron compound with major markets in textile products. Boron compounds are also extensively used in the manufacture of borosilicate 
glasses. The isotope Boron-10 is used as a control for nuclear reactors, as a shield for nuclear radiation, and in instruments used for detecting neutrons. Boron nitride has remarkable properties and can be used to make a material as hard as diamond. The nitride also behaves like an electrical insulator but conducts heat like a metal. Boron also has lubricating properties similar to graphite. Boron was first discovered by Sir Humphry Davy and J.L Gay-Lussac in 1808. The name Boron originates from a combination of carbon and the Arabic word 'buraqu meaning borax. See Boron research below. 
