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Gallium Arsenide

High Purity GaAs
CAS 1303-00-0


Product Product Code Request Quote
(5N) 99.999% Gallium Arsenide Powder GA-AS-05-P Request Quote
(5N) 99.999% Gallium Arsenide Ingot GA-AS-05-I Request Quote
(5N) 99.999% Gallium Arsenide Chunk GA-AS-05-CK Request Quote
(5N) 99.999% Gallium Arsenide Lump GA-AS-05-L Request Quote
(5N) 99.999% Gallium Arsenide Sputtering Target GA-AS-05-ST Request Quote
(5N) 99.999% Gallium Arsenide Wafer GA-AS-05-WSX Request Quote

CHEMICAL
IDENTIFIER
Formula CAS No. PubChem CID MDL No. EC No IUPAC Name Beilstein
Re. No.
SMILES
Identifier
InChI
Identifier
InChI
Key
GaAs 1303-00-0 14770 MFCD00011017 215-114-8 gallanylidynearsane N/A [As]#[Ga] InChI=1S/As.Ga JBRZTFJDHDCESZ-UHFFFAOYSA-N

PROPERTIES Compound Formula Mol. Wt. Appearance Melting
Point
Boiling
Point
Density Exact Mass Monoisotopic Mass Charge MSDS
AsGa 144.64 Gray crystalline solid 1238°C N/A 5.32 g/cm3 143.84717 143.84717 0 Safety Data Sheet

Arsenide IonGallium Arsenide is a semiconductor with superior electronic properties to silicon. It has a higher saturated electron velocity and higher electron mobility, allowing it to function at microwave frequencies. American Elements produces to many standard grades when applicable, including Mil Spec (military grade); ACS, Reagent and Technical Grade; Food, Agricultural and Pharmaceutical Grade; Optical Grade, USP and EP/BP (European Pharmacopoeia/British Pharmacopoeia) and follows applicable ASTM testing standards. Typical and custom packaging is available. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.

Gallium (Ga) atomic and molecular weight, atomic number and elemental symbolGallium (atomic symbol: Ga, atomic number: 31) is a Block P, Group 13, Period 4 element with an atomic weight of 69.723.The number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electron configuration is [Ar] 3d10 4s2 4p1. The gallium atom has a radius of 122.1 pm and a Van der Waals radius of 187 pm. Gallium Bohr ModelGallium was predicted by Dmitri Mendeleev in 1871. It was first discovered and isolated by Lecoq de Boisbaudran in 1875. In its elemental form, gallium has a silvery appearance. Elemental GalliumGallium is one of three elements that occur naturally as a liquid at room temperature, the other two being mercury and cesium. Gallium does not exist as a free element in nature and is sourced commercially from bauxite and sphalerite. Currently, gallium is used in semiconductor devices for microelectronics and optics. The element name originates from the Latin word 'Gallia', the old name of France, and the word 'Gallus,' meaning rooster. For more information on gallium, including properties, safety data, research, and American Elements' catalog of gallium products, visit our Gallium element page.

Arsenic Bohr ModelArsenic (As) atomic and molecular weight, atomic number and elemental symbolArsenic (atomic symbol: As, atomic number: 33) is a Block P, Group 15, Period 4 element with an atomic radius of 74.92160. The number of electrons in each of arsenic's shells is 2, 8, 18, 5 and its electron configuration is [Ar] 3d10 4s2 4p3. The arsenic atom has a radius of 119 pm and a Van der Waals radius of 185 pm. Arsenic was discovered in the early Bronze Age, circa 2500 BC. It was first isolated by Albertus Magnus in 1250 AD. In its elemental form, arsenic is a metallic grey, brittle, crystalline, semimetallic solid.Elemental Arsenic Arsenic is found in numerous minerals including arsenolite (As2O3), arsenopyrite (FeAsS), loellingite (FeAs2), orpiment (As2S3), and realgar (As4S4). Arsenic has numerous applications as a semiconductor and other electronic applications as indium arsenide, silicon arsenide and tin arsenide. Arsenic is finding increasing uses as a doping agent in solid-state devices such as transistors. For more information on arsenic, including properties, safety data, research, and American Elements' catalog of arsenic products, visit the Arsenic element page.


HEALTH, SAFETY & TRANSPORTATION INFORMATION
Material Safety Data Sheet MSDS
Signal Word Danger
Hazard Statements H301 + H331-H410
Hazard Codes T,N
Risk Codes 23/25-50/53
Safety Precautions 20/21-28-45-60-61
RTECS Number LW8800000
Transport Information UN 1557 6.1/PG 2
WGK Germany 3
Globally Harmonized System of
Classification and Labelling (GHS)
Skull and Crossbones-Acute Toxicity  Environment-Hazardous to the aquatic environment      

GALLIUM ARSENIDE SYNONYMS
Gallium monoarsenide; Arsinidynegallium; gallanylidynearsane

CUSTOMERS FOR GALLIUM ARSENIDE HAVE ALSO LOOKED AT
Gallium Acetylacetonate Gallium Acetate Gallium Fluoride Gallium Antimonide Triethylgallium
Copper Indium Gallium Selenide - CIGS Gallium Arsenide Gallium Oxide Nanopowder Gallium Oxide Powder Gallium Nitride Wafer
Gadolinium Gallium Garnet - GGG Copper Gallium Sputtering Target Trimethylgallium Gallium doped Zinc Oxide - GZO Gallium Oxide
Show Me MORE Forms of Gallium

PACKAGING SPECIFICATIONS FOR BULK & RESEARCH QUANTITIES
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.


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Recent Research & Development for Gallium

  • Gallium Maltolate as an Alternative to Macrolides for Treatment of Presumed Rhodococcus equi Pneumonia in Foals.. Cohen ND, Slovis NM, Giguère S, Baker S, Chaffin MK, Bernstein LR.. J Vet Intern Med. 2015 May
  • Effect of Al2O3 insulator thickness on the structural integrity of amorphous indium-gallium-zinc-oxide based thin film transistors.. Kim HJ, Hwang IJ, Kim YJ.. J Nanosci Nanotechnol. 2014 Dec
  • Design and analysis of vertical-channel gallium nitride (GaN) junctionless nanowire transistors (JNT).. Seo JH, Yoon YJ, Lee HG, Yoo GM, Jo YW, Son DH, Lee JH, Cho ES, Cho S, Kang IM.. J Nanosci Nanotechnol. 2014 Nov
  • Nanoparticles: mechanically sintered gallium-indium nanoparticles (adv. Mater. 14/2015).. Boley JW, White EL, Kramer RK.. Adv Mater. 2015 Apr
  • Radiation stability of visible and near-infrared optical and magneto-optical properties of terbium gallium garnet crystals.. Geist B, Ronningen R, Stolz A, Bollen G, Kochergin V.. Appl Opt. 2015 Apr 1
  • Initial oxidation of gallium arsenide (001)-β2(2 x 4) surface using density functional theory.. Kim DH, Kim DH, Kim YC.. J Nanosci Nanotechnol. 2014 Oct
  • Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing.. Trindade AJ, Guilhabert B, Xie EY, Ferreira R, McKendry JJ, Zhu D, Laurand N, Gu E, Wallis DJ, Watson IM, Humphreys CJ, Dawson MD.. Opt Express. 2015 Apr 6
  • Solution phase synthesis of indium gallium phosphide alloy nanowires.. Kornienko N, Whitmore DD, Yu Y, Leone SR, Yang P.. ACS Nano. 2015 Apr 28
  • Recycling process for recovery of gallium from GaN an e-waste of LED industry through ball milling, annealing and leaching. Swain B, Mishra C, Kang L, Park KS, Lee CG, Hong HS. Environ Res. 2015 Apr: Environ Res
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Recent Research & Development for Arsenides

  • Initial oxidation of gallium arsenide (001)-β2(2 x 4) surface using density functional theory.. Kim DH, Kim DH, Kim YC.. J Nanosci Nanotechnol. 2014 Oct
  • Performance of a Medipix3RX spectroscopic pixel detector with a high resistivity gallium arsenide sensor.. Hamann E, Koenig T, Zuber M, Cecilia A, Tyazhev A, Tolbanov O, Procz S, Fauler A, Baumbach T, Fiederle M.. IEEE Trans Med Imaging. 2015 Mar
  • LiCa₃As₂H and Ca₁₄As₆X₇ (X = C, H, N): two new arsenide hydride phases grown from Ca/Li metal flux.. Blankenship TV, Wang X, Hoffmann C, Latturner SE.. Inorg Chem. 2014 Oct 6
  • Ultrafast pump-probe spectroscopy in gallium arsenide at 25 T.. Curtis JA, Tokumoto T, Nolan NK, McClintock LM, Cherian JG, McGill SA, Hilton DJ.. Opt Lett. 2014 Oct 1
  • Nuclear magnetization in gallium arsenide quantum dots at zero magnetic field.. Sallen G, Kunz S, Amand T, Bouet L, Kuroda T, Mano T, Paget D, Krebs O, Marie X, Sakoda K, Urbaszek B.. Nat Commun. 2014
  • High Final Energy of Low-Level Gallium Arsenide Laser Therapy Enhances Skeletal Muscle Recovery without a Positive Effect on Collagen Remodeling.. de Freitas CE, Bertaglia RS, Vechetti Júnior IJ, Mareco EA, Salomão RA, de Paula TG, Nai GA, Carvalho RF, Pacagnelli FL, Dal-Pai-Silva M.. Photochem Photobiol. 2015 Mar 7.
  • Photoelastic coupling in gallium arsenide optomechanical disk resonators.. Baker C, Hease W, Nguyen DT, Andronico A, Ducci S, Leo G, Favero I.. Opt Express. 2014 Jun 16
  • Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors.. Razavieh A, Mohseni PK, Jung K, Mehrotra S, Das S, Suslov S, Li X, Klimeck G, Janes DB, Appenzeller J.. ACS Nano. 2014 Jun 24
  • The E1-E2 center in gallium arsenide is the divacancy.. Schultz PA.. J Phys Condens Matter. 2015 Feb 25
  • Phase diagram of (Li(1-x)Fe(x))OHFeSe: a bridge between iron selenide and arsenide superconductors.. Dong X, Zhou H, Yang H, Yuan J, Jin K, Zhou F, Yuan D, Wei L, Li J, Wang X, Zhang G, Zhao Z.. J Am Chem Soc. 2015 Jan 14