Gallium Arsenide

High Purity GaAs
CAS 1303-00-0

Product Product Code Order or Specifications
(5N) 99.999% Gallium Arsenide Powder GA-AS-05-P Contact American Elements
(5N) 99.999% Gallium Arsenide Ingot GA-AS-05-I Contact American Elements
(5N) 99.999% Gallium Arsenide Chunk GA-AS-05-CK Contact American Elements
(5N) 99.999% Gallium Arsenide Lump GA-AS-05-L Contact American Elements
(5N) 99.999% Gallium Arsenide Sputtering Target GA-AS-05-ST Contact American Elements
(5N) 99.999% Gallium Arsenide Wafer GA-AS-05-WSX Contact American Elements

Formula CAS No. PubChem CID MDL No. EC No IUPAC Name Beilstein
Re. No.
GaAs 1303-00-0 14770 MFCD00011017 215-114-8 gallanylidynearsane N/A [As]#[Ga] InChI=1S/As.Ga JBRZTFJDHDCESZ-UHFFFAOYSA-N

PROPERTIES Compound Formula Mol. Wt. Appearance Melting

Exact Mass

Monoisotopic Mass Charge MSDS
AsGa 144.64 Gray crystalline solid 1238°C N/A 5.32 g/cm3 143.84717 143.84717 0 Safety Data Sheet

Arsenide IonGallium Arsenide is a semiconductor with superior electronic properties to silicon. It has a higher saturated electron velocity and higher electron mobility, allowing it to function at microwave frequencies. American Elements produces to many standard grades when applicable, including Mil Spec (military grade); ACS, Reagent and Technical Grade; Food, Agricultural and Pharmaceutical Grade; Optical Grade, USP and EP/BP (European Pharmacopoeia/British Pharmacopoeia) and follows applicable ASTM testing standards. Typical and custom packaging is available. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.

Gallium (Ga) atomic and molecular weight, atomic number and elemental symbolGallium (atomic symbol: Ga, atomic number: 31) is a Block P, Group 13, Period 4 element with an atomic weight of 69.723.The number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electron configuration is [Ar] 3d10 4s2 4p1. The gallium atom has a radius of 122.1 pm and a Van der Waals radius of 187 pm. Gallium Bohr ModelGallium was predicted by Dmitri Mendeleev in 1871. It was first discovered and isolated by Lecoq de Boisbaudran in 1875. In its elemental form, gallium has a silvery appearance. Elemental GalliumGallium is one of three elements that occur naturally as a liquid at room temperature, the other two being mercury and cesium. Gallium does not exist as a free element in nature and is sourced commercially from bauxite and sphalerite. Currently, gallium is used in semiconductor materials for microelectronics and optics. The element name originates from the Latin word 'Gallia', the old name of France, and the word 'Gallus,' meaning rooster. For more information on gallium, including properties, safety data, research, and American Elements' catalog of gallium products, visit our Periodic Table of the Elements: Gallium Information Page.

Arsenic Bohr ModelArsenic (As) atomic and molecular weight, atomic number and elemental symbolArsenic (atomic symbol: As, atomic number: 33) is a Block P, Group 15, Period 4 element with an atomic radius of 74.92160. The number of electrons in each of arsenic's shells is 2, 8, 18, 5 and its electron configuration is [Ar] 3d10 4s2 4p3. The arsenic atom has a radius of 119 pm and a Van der Waals radius of 185 pm. Arsenic was discovered in the early Bronze Age, circa 2500 BC. It was first isolated by Albertus Magnus in 1250 AD. In its elemental form, arsenic is a metallic grey, brittle, crystalline, semimetallic solid.Elemental Arsenic Arsenic is found in numerous minerals including arsenolite (As2O3), arsenopyrite (FeAsS), loellingite (FeAs2), orpiment (As2S3), and realgar (As4S4). Arsenic has numerous applications as a semiconductor and other electronic applications as indium arsenide, silicon arsenide and tin arsenide. Arsenic is finding increasing uses as a doping agent in solid-state devices such as transistors. For more information on arsenic, including properties, safety data, research, and American Elements' catalog of arsenic products, visit the Arsenic Information Center.

Material Safety Data Sheet MSDS
Signal Word Danger
Hazard Statements H301 + H331-H410
Hazard Codes T,N
Risk Codes 23/25-50/53
Safety Precautions 20/21-28-45-60-61
RTECS Number LW8800000
Transport Information UN 1557 6.1/PG 2
WGK Germany 3
Globally Harmonized System of
Classification and Labelling (GHS)
Skull and Crossbones-Acute Toxicity  Environment-Hazardous to the aquatic environment      

Gallium monoarsenide; Arsinidynegallium; gallanylidynearsane

Gallium Acetylacetonate Gallium Acetate Gallium Fluoride Gallium Sputtering Target Gallium Chloride
Gallium Rod Gallium Oxide Pellets Gallium Oxide Nanopowder Gallium Oxide Powder Gallium Pellets
Gadolinium Gallium Garnet-GGG Copper Gallium Sputtering Target Gallium Metal Gallium Foil Gallium Oxide
Show Me MORE Forms of Gallium

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.

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Recent Research & Development for Gallium

  • P. Zhang, L.W. Shen, J. Ouyang, Y.M. Zhang, S.Q. Wu, Z.M. Sun, Room temperature mushrooming of gallium wires and its growth mechanism, Journal of Alloys and Compounds, Volume 619, 15 January 2015
  • Wei-Sheng Liu, Shen-Yu Wu, Chao-Yu Hung, Ching-Hsuan Tseng, Yu-Lin Chang, Improving the optoelectronic properties of gallium ZnO transparent conductive thin films through titanium doping, Journal of Alloys and Compounds, Volume 616, 15 December 2014
  • Mohamed Bakr Mohamed, M. Yehia, Cation distribution and magnetic properties of nanocrystalline gallium substituted cobalt ferrite, Journal of Alloys and Compounds, Volume 615, 5 December 2014
  • Erkan Aydin, Mehmet Sankir, Nurdan Demirci Sankir, Conventional and rapid thermal annealing of spray pyrolyzed copper indium gallium sulfide thin films, Journal of Alloys and Compounds, Volume 615, 5 December 2014
  • Ming-Wei Wu, Pang-Hsin Lai, Chia-Hong Hong, Fang-Cheng Chou, The sintering behavior, microstructure, and electrical properties of gallium-doped zinc oxide ceramic targets, Journal of the European Ceramic Society, Volume 34, Issue 15, December 2014
  • Min-Jia Wang, Hui Yang, Qi-Long Zhang, Zhi-Sheng Lin, Zi-Shan Zhang, Dan Yu, Liang Hu, Microstructure and dielectric properties of BaTiO3 ceramic doped with yttrium, magnesium, gallium and silicon for AC capacitor application, Materials Research Bulletin, Volume 60, December 2014
  • Helge Reinsch, Dirk De Vos, Structures and properties of gallium-MOFs with MIL-53-topology based on aliphatic linker molecules, Microporous and Mesoporous Materials, Volume 200, December 2014
  • V.V. Serikov, N.M. Kleinerman, A.V. Vershinin, N.V. Mushnikov, A.V. Protasov, L.A. Stashkova, O.I. Gorbatov, A.V. Ruban, Yu.N. Gornostyrev, Formation of solid solutions of gallium in Fe–Cr and Fe–Co alloys: Mössbauer studies and first-principles calculations, Journal of Alloys and Compounds, Volume 614, 25 November 2014
  • Jae-Hun Jeong, Dong-Won Jung, Eun-Suok Oh, Lithium storage characteristics of a new promising gallium selenide anodic material, Journal of Alloys and Compounds, Volume 613, 15 November 2014
  • Fahmi Fariq Muhammad, Khaulah Sulaiman, Optical and morphological modifications in post-thermally treated tris(8-hydroxyquinoline) gallium films deposited on quartz substrates, Materials Chemistry and Physics, Volume 148, Issues 1–2, 14 November 2014

Recent Research & Development for Arsenides

  • Elena Yu. Zakharova, Natalia A. Andreeva, Sergey M. Kazakov, Alexey N. Kuznetsov, Ternary arsenides based on platinum-indium and palladium-indium fragments of the Cu3Au-type: crystal structures and chemical bonding, Journal of Alloys and Compounds, Available online 5 October 2014
  • Jianwei Wang, Alberto Santamato, Pisu Jiang, Damien Bonneau, Erman Engin, Joshua W. Silverstone, Matthias Lermer, Johannes Beetz, Martin Kamp, Sven Höfling, Michael G. Tanner, Chandra M. Natarajan, Robert H. Hadfield, Sander N. Dorenbos, Val Zwiller, Jeremy L. O’Brien, Mark G. Thompson, Gallium arsenide (GaAs) quantum photonic waveguide circuits, Optics Communications, Volume 327, 15 September 2014
  • Wyatt H. Strong, David V. Forbes, Seth M. Hubbard, Investigation of deep level defects in electron irradiated indium arsenide quantum dots embedded in a gallium arsenide matrix, Materials Science in Semiconductor Processing, Volume 25, September 2014
  • Ali A. Orouji, Mohammad Nejaty, Alireza Mohtasham, Novel Indium Arsenide double gate and gate all around nanowire MOSFETs for diminishing the exchange correlation effect: A quantum study, Physica E: Low-dimensional Systems and Nanostructures, Volume 63, September 2014
  • Stéphane Pommier, Stéphane Valette, Pierre Lefort, Dearsenization of nickel-based catalysts: Thermal behaviour of nickel arsenide in oxygen and in air, Corrosion Science, Available online 23 August 2014
  • N. Sengouga, Af. Meftah, Am. Meftah, M. Henini, Numerical simulation of the response of substrate traps to a voltage applied to the gate of a gallium arsenide field effect transistor, Materials Science in Semiconductor Processing, Volume 24, August 2014
  • Luca Bindi, Marian Tredoux, Federica Zaccarini, Duncan E. Miller, Giorgio Garuti, Non-stoichiometric nickel arsenides in nature: The structure of orcelite, Ni5−xAs2 (x = 0.25), from the Bon Accord oxide body, South Africa, Journal of Alloys and Compounds, Volume 601, 15 July 2014
  • Seong-Uk Yang, Woo-Shik Jung, In-Yeal Lee, Hyun-Wook Jung, Gil-Ho Kim, Jin-Hong Park, Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO), Materials Research Bulletin, Volume 50, February 2014
  • Xinlong Chen, Jing Zhao, Benkang Chang, Guanghui Hao, Yuan Xu, Yijun Zhang, Muchun Jin, Roles of cesium and oxides in the processing of gallium aluminum arsenide photocathodes, Materials Science in Semiconductor Processing, Volume 18, February 2014
  • Andrzej Wolkenberg, Hall measurements of n-indium arsenide MBE-deposited layers: Relevance to device processing and applications, Materials Science in Semiconductor Processing, Volume 18, February 2014