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Gallium Arsenide

High Purity GaAs
CAS 1303-00-0


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(5N) 99.999% Gallium Arsenide Powder GA-AS-05-P Request Quote
(5N) 99.999% Gallium Arsenide Ingot GA-AS-05-I Request Quote
(5N) 99.999% Gallium Arsenide Chunk GA-AS-05-CK Request Quote
(5N) 99.999% Gallium Arsenide Lump GA-AS-05-L Request Quote
(5N) 99.999% Gallium Arsenide Sputtering Target GA-AS-05-ST Request Quote
(5N) 99.999% Gallium Arsenide Wafer GA-AS-05-WSX Request Quote

CHEMICAL
IDENTIFIER
Formula CAS No. PubChem CID MDL No. EC No IUPAC Name Beilstein
Re. No.
SMILES
Identifier
InChI
Identifier
InChI
Key
GaAs 1303-00-0 14770 MFCD00011017 215-114-8 gallanylidynearsane N/A [As]#[Ga] InChI=1S/As.Ga JBRZTFJDHDCESZ-UHFFFAOYSA-N

PROPERTIES Compound Formula Mol. Wt. Appearance Melting
Point
Boiling
Point
Density Exact Mass Monoisotopic Mass Charge MSDS
AsGa 144.64 Gray crystalline solid 1238°C N/A 5.32 g/cm3 143.84717 143.84717 0 Safety Data Sheet

Arsenide IonGallium Arsenide is a semiconductor with superior electronic properties to silicon. It has a higher saturated electron velocity and higher electron mobility, allowing it to function at microwave frequencies. American Elements produces to many standard grades when applicable, including Mil Spec (military grade); ACS, Reagent and Technical Grade; Food, Agricultural and Pharmaceutical Grade; Optical Grade, USP and EP/BP (European Pharmacopoeia/British Pharmacopoeia) and follows applicable ASTM testing standards. Typical and custom packaging is available. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.

Gallium (Ga) atomic and molecular weight, atomic number and elemental symbolGallium (atomic symbol: Ga, atomic number: 31) is a Block P, Group 13, Period 4 element with an atomic weight of 69.723.The number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electron configuration is [Ar] 3d10 4s2 4p1. The gallium atom has a radius of 122.1 pm and a Van der Waals radius of 187 pm. Gallium Bohr ModelGallium was predicted by Dmitri Mendeleev in 1871. It was first discovered and isolated by Lecoq de Boisbaudran in 1875. In its elemental form, gallium has a silvery appearance. Elemental GalliumGallium is one of three elements that occur naturally as a liquid at room temperature, the other two being mercury and cesium. Gallium does not exist as a free element in nature and is sourced commercially from bauxite and sphalerite. Currently, gallium is used in semiconductor devices for microelectronics and optics. The element name originates from the Latin word 'Gallia', the old name of France, and the word 'Gallus,' meaning rooster. For more information on gallium, including properties, safety data, research, and American Elements' catalog of gallium products, visit our Gallium element page.

Arsenic Bohr ModelArsenic (As) atomic and molecular weight, atomic number and elemental symbolArsenic (atomic symbol: As, atomic number: 33) is a Block P, Group 15, Period 4 element with an atomic radius of 74.92160. The number of electrons in each of arsenic's shells is 2, 8, 18, 5 and its electron configuration is [Ar] 3d10 4s2 4p3. The arsenic atom has a radius of 119 pm and a Van der Waals radius of 185 pm. Arsenic was discovered in the early Bronze Age, circa 2500 BC. It was first isolated by Albertus Magnus in 1250 AD. In its elemental form, arsenic is a metallic grey, brittle, crystalline, semimetallic solid.Elemental Arsenic Arsenic is found in numerous minerals including arsenolite (As2O3), arsenopyrite (FeAsS), loellingite (FeAs2), orpiment (As2S3), and realgar (As4S4). Arsenic has numerous applications as a semiconductor and other electronic applications as indium arsenide, silicon arsenide and tin arsenide. Arsenic is finding increasing uses as a doping agent in solid-state devices such as transistors. For more information on arsenic, including properties, safety data, research, and American Elements' catalog of arsenic products, visit the Arsenic element page.


HEALTH, SAFETY & TRANSPORTATION INFORMATION
Material Safety Data Sheet MSDS
Signal Word Danger
Hazard Statements H301 + H331-H410
Hazard Codes T,N
Risk Codes 23/25-50/53
Safety Precautions 20/21-28-45-60-61
RTECS Number LW8800000
Transport Information UN 1557 6.1/PG 2
WGK Germany 3
Globally Harmonized System of
Classification and Labelling (GHS)
Skull and Crossbones-Acute Toxicity  Environment-Hazardous to the aquatic environment      

GALLIUM ARSENIDE SYNONYMS
Gallium monoarsenide; Arsinidynegallium; gallanylidynearsane

CUSTOMERS FOR GALLIUM ARSENIDE HAVE ALSO LOOKED AT
Gallium Acetylacetonate Gallium Acetate Gallium Fluoride Gallium Antimonide Triethylgallium
Copper Indium Gallium Selenide - CIGS Gallium Arsenide Gallium Oxide Nanopowder Gallium Oxide Powder Gallium Nitride Wafer
Gadolinium Gallium Garnet - GGG Copper Gallium Sputtering Target Trimethylgallium Gallium doped Zinc Oxide - GZO Gallium Oxide
Show Me MORE Forms of Gallium

PACKAGING SPECIFICATIONS FOR BULK & RESEARCH QUANTITIES
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.


Have a Question? Ask a Chemical Engineer or Material Scientist
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Recent Research & Development for Gallium

  • Nanoscale Optical Properties of Indium Gallium Nitride/Gallium Nitride Nanodisk-in-Rod Heterostructures. Xiang Zhou, Ming-Yen Lu, Yu-Jung Lu, Eric J. Jones, Shangjr Gwo, and Silvija Gradeak. ACS Nano: February 7, 2015
  • Gallium Plasmonics: Deep Subwavelength Spectroscopic Imaging of Single and Interacting Gallium Nanoparticles. Mark W. Knight, Toon Coenen, Yang Yang, Benjamin J. M. Brenny, Maria Losurdo, April S. Brown, Henry O. Everitt, and Albert Polman. ACS Nano: January 28, 2015
  • Influence of Source and Drain Contacts on the Properties of Indium–Gallium–Zinc-Oxide Thin-Film Transistors based on Amorphous Carbon Nanofilm as Barrier Layer. Dongxiang Luo, Hua Xu, Mingjie Zhao, Min Li, Miao Xu, Jianhua Zou, Hong Tao, Lei Wang, and Junbiao Peng. ACS Appl. Mater. Interfaces: January 26, 2015
  • Insertion of Benzonitrile into Al–N and Ga–N Bonds: Formation of Fused Carbatriaza-Gallanes/Alanes and Their Subsequent Synthesis from Amidines and Trimethyl-Gallium/Aluminum. K. Maheswari, A. Ramakrishna Rao, and N. Dastagiri Reddy. Inorg. Chem.: January 26, 2015
  • Mixed Pentele-Chalcogen Cationic Chains from Aluminum and Gallium Halide Melts. Andreas Eich, Thomas Bredow, and Johannes Beck. Inorg. Chem.: December 30, 2014
  • Temperature Dependent EXAFS Study of Chromium-Doped GaFeO3 at Gallium and Iron Edges. S. Basu, Ripandeep Singh, A. Das, T. Roy, A. Chakrabarti, A. K. Nigam, S. N. Jha, and D. Bhattacharyya. J. Phys. Chem. C: December 24, 2014
  • Solvothermal Synthesis of Gallium–Indium-Zinc-Oxide Nanoparticles for Electrolyte-Gated Transistors. Lídia Santos, Daniela Nunes, Tomás Calmeiro, Rita Branquinho, Daniela Salgueiro, Pedro Barquinha, Luís Pereira, Rodrigo Martins, and Elvira Fortunato. ACS Appl. Mater. Interfaces: December 17, 2014
  • Surface Characterization of Gallium Nitride Modified with Peptides before and after Exposure to Ionizing Radiation in Solution. Nora G. Berg, Michael W. Nolan, Tania Paskova, and Albena Ivanisevic. Langmuir: December 5, 2014
  • Influence of Water on the Interfacial Behavior of Gallium Liquid Metal Alloys. Mohammad R. Khan, Chris Trlica, Ju-Hee So, Michael Valeri, and Michael D. Dickey. ACS Appl. Mater. Interfaces: December 3, 2014
  • Low-Temperature Growth of Crystalline Gallium Nitride Films Using Vibrational Excitation of Ammonia Molecules in Laser-Assisted Metalorganic Chemical Vapor Deposition. Hossein Rabiee Golgir, Yang Gao, Yun Shen Zhou, Lisha Fan, Premkumar Thirugnanam, Kamran Keramatnejad, Lan Jiang, Jean-François Silvain, and Yong Feng Lu. Crystal Growth & Design: November 11, 2014
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Recent Research & Development for Arsenides

  • LiCa3As2H and Ca14As6X7 (X = C, H, N): Two New Arsenide Hydride Phases Grown from Ca/Li Metal Flux. Trevor V. Blankenship, Xiaoping Wang, Christina Hoffmann, and Susan E. Latturner. Inorg. Chem.: September 15, 2014
  • Kinetic Investigation on the Confined Etching System of n-Type Gallium Arsenide by Scanning Electrochemical Microscopy. Jie Zhang, Jingchun Jia, Lianhuan Han, Ye Yuan, Zhong-Qun Tian, Zhao-Wu Tian, and Dongping Zhan. J. Phys. Chem. C: July 23, 2014
  • Effect of Diameter Variation on Electrical Characteristics of Schottky Barrier Indium Arsenide Nanowire Field-Effect Transistors. Ali Razavieh, Parsian Katal Mohseni, Kyooho Jung, Saumitra Mehrotra, Saptarshi Das, Sergey Suslov, Xiuling Li, Gerhard Klimeck, David B. Janes, and Joerg Appenzeller. ACS Nano: May 21, 2014
  • DNA Detection Using Plasmonic Enhanced Near-Infrared Photoluminescence of Gallium Arsenide. Longhua Tang, Ik Su Chun, Zidong Wang, Jinghong Li, Xiuling Li, and Yi Lu. Anal. Chem.: August 29, 2013
  • Transmetalation of Chromocene by Lithium-Amide, -Phosphide, and -Arsenide Nucleophiles. Sabine Scheuermayer, Floriana Tuna, Eufemio Moreno Pineda, Michael Bodensteiner, Manfred Scheer, and Richard A. Layfield. Inorg. Chem.: March 11, 2013
  • Wet Chemical Functionalization of III–V Semiconductor Surfaces: Alkylation of Gallium Arsenide and Gallium Nitride by a Grignard Reaction Sequence. Sabrina L. Peczonczyk, Jhindan Mukherjee, Azhar I. Carim, and Stephen Maldonado. Langmuir: February 28, 2012
  • Closed Loop Coherent Control of Electronic Transitions in Gallium Arsenide. Sima Singha, Zhan Hu, and Robert J. Gordon. J. Phys. Chem. A: February 22, 2011
  • Modulation of Band Bending of Gallium Arsenide with Oriented Helical Peptide Monolayers. Thomas Kaindl, Klaus Adlkofer, Tomoyuki Morita, Junzo Umemura, Oleg Konovalov, Shunsaku Kimura, and Motomu Tanaka. J. Phys. Chem. C: December 8, 2010
  • Photoluminescence and Growth Kinetics of High-Quality Indium Arsenide and InAs-Based Core/Shell Colloidal Nanocrystals Synthesized Using Arsine (AsH3) Generated via Zinc Arsenide as the Arsenic Source. Jianbing Zhang and Daoli Zhang. Chem. Mater.: January 4, 2010
  • Preparation and Characterization of Octadecanethiol Self-Assembled Monolayers on Indium Arsenide (100). Wout Knoben, Sywert H. Brongersma and Mercedes Crego-Calama. J. Phys. Chem. C: September 18, 2009