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Gallium Arsenide
High Purity GaAs
Product
Product Code
Order or Specifications
99.999% Gallium Arsenide Powder
GA-AS-05-P
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99.999% Gallium Arsenide Ingot
GA-AS-05-I
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99.999% Gallium Arsenide Chunk
GA-AS-05-CK
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99.999% Gallium Arsenide Lump
GA-AS-05-L
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99.999% Gallium Arsenide Sputtering Target
GA-AS-05-ST
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Gallium Arsenide is a semiconductor with superior electronic properties to silicon. It has a higher saturated electron velocity and higher electron mobility, allowing it to function at microwave frequencies. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.

Gallium is a Block P, Group 13, Period 4 element. The electronic configuration is [Ar] 3d10 4s2 4p1. In its elemental form gallium's CAS number is 7440-55-3. The gallium atom has a radius of 122.1.pm and it's Van der Waals radius is 187.pm. Gallium is one of three elements that naturally occur as a liquid at room temperature. The other two are mercury and cesium. The application of gallium that has received the most attention is the production of semiconducting compounds. Of these, the most important are the compounds of gallium with antimony, arsenic or phosphor.

Arsenic is a Block P, Group 15, Period 4 element. The electronic configuration is [Ar] 3d10 4s2 4p3. In its elemental form arsenic's CAS number is 1327-53-3. The arsenic atom has a radius of 124.5.pm and it's Van der Waals radius is 185.pm. Arsenic has numerous applications as a semiconductor and other electronic applications as Indium arsenide, silicon arsenide and tin arsenidea. Arsenic is finding increasing uses as a doping agent in solid-state devices such as transistors. Gallium arsenide is used as a laser material to convert electricity directly into coherent light. Arsenic is used in bronzing and for hardening and improving the sphericity of shot. Arsenic is available as metal and compounds with purities from 99% to 99.9999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder.

American Elements semi conducting materials are crystal structures produced from ultra high purity starting materials synthesized by our high purity production facility which includes several large electric muffle furnaces, a tube furnace for hydrogen reduction, 50 gallon glass-lined Pfaudler reactors supported by our analytical laboratory containing X-ray diffraction, SEM, AA, BET surface area, and ICP Spectrometry for trace metals analysis. See a discussion of American Elements Ultra High Purity and Analytical capabilities. See Crystal Growth for processes used to fabricate semiconductor materials, which include:

  • Crystal "pulling" by the Czochaiski method for production of semiconductor materials
  • Flux growth and gradient freeze
  • Directional solidification of fluorites using both the Bridgman-Stockbarger and float zoning techniques
PRODUCT CATALOG Submicron & Nanopowder Tolling Ultra High Purity Sputtering Target Crystal Growth Rod, Plate, Powder, etc.
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Recent Research & Development for Gallium

  • Convenient Synthesis of Aluminum and Gallium Phosphonate Cages. Inorg Chem. 2008 Mar 26; [Epub ahead of print]

  • Base free lithium-organoaluminate and the gallium congener: potential precursors to heterometallic assemblies. Chem Commun (Camb). 2007 Dec 14;(46):4934-6.

  • Formation of High-Mass Cluster Ions from Compound Semiconductors Using Time-of-Flight Secondary Ion Mass Spectrometry with Cluster Primary Ions. Anal Chem. 2008 Mar 22; [Epub ahead of print]

  • Detection of an Infected Abdominal Aortic Aneurysm With Three-Phase Bone Scan and Gallium-67 Scan. Clin Nucl Med. 2008 Apr;33(4):305-307.

  • Rapid formation of metal-organic nano-capsules gives new insight into the self-assembly process. Chem Commun (Camb). 2008 Apr 7;(13):1539-41. Epub 2008 Feb 27.

  • Off-axis refractive mass-transported gallium-phosphide microlens array for the reduction of distortion in an optical interconnect system. Appl Opt. 2000 Nov 10;39(32):6028-33.

  • Facile one-pot synthesis of 5-substituted hydantoins. Org Biomol Chem. 2008 Mar 21;6(6):988-91. Epub 2008 Feb 14.

  • Investigation on damage of DNA molecules under irradiation of low frequency ultrasound in the presence of hematoporphyrin-gallium (HP-Ga) complex. Ultrason Sonochem. 2008 Feb 5; [Epub ahead of print]

  • Radionuclide imaging of musculoskeletal infection: conventional agents. Semin Musculoskelet Radiol. 2007 Dec;11(4):335-52.

  • Synthesis and characterization of ZnO and ZnO:Ga films and their application in dye-sensitized solar cells. Dalton Trans. 2008 Mar 21;(11):1487-91. Epub 2008 Feb 12.

  • Spatial-mode control of vertical-cavity lasers with micromirrors fabricated and replicated in semiconductor materials. Appl Opt. 1999 May 10;38(14):3030-8.

  • Mass-transport fabrication of off-axis and prismatic gallium phosphide optics. Appl Opt. 1999 May 10;38(14):2979-85.

  • Simulation studies on the evolution of gallium nitride on a liquid gallium surface under plasma bombardment.

  • Resistance of planktonic and biofilm-grown Burkholderia cepacia complex isolates to the transition metal gallium. J Antimicrob Chemother. 2008 Feb 26; [Epub ahead of print]

  • Low-level laser therapy modulates cyclo-oxygenase-2 expression during bone repair in rats. Lasers Med Sci. 2008 Feb 29; [Epub ahead of print]

  • Mid-Infrared (5-12-mum) and Limited (5.5-8.5-mum) Single-Knob Tuning Generated by Difference-Frequency Mixing in Single-Crystal AgGaS(2). Appl Opt. 1999 Mar 20;38(9):1798-801.

  • Primary malignant fibrous histiocytoma of the thyroid: review of the literature with two new cases. Thyroid. 2008 Jan;18(1):51-5.

  • [Atypical peritoneal tuberculosis. Use of laparoscopy in the diagnosis] Rev Esp Enferm Dig. 2007 Dec;99(12):725-8. Spanish.

  • Medical treatment of malignancy-associated hypercalcemia. Curr Med Chem. 2008;15(4):415-21.

  • Finite-Element Analysis of Lossy TE-TM modes in Metal-Clad Optical Waveguides. Appl Opt. 1998 Aug 20;37(24):5747-54.

 

 

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