Gallium Arsenide

High Purity GaAs
CAS 1303-00-0

Product	Product Code	Order or Specifications
(5N) 99.999% Gallium Arsenide Powder	GA-AS-05-P
(5N) 99.999% Gallium Arsenide Ingot	GA-AS-05-I
(5N) 99.999% Gallium Arsenide Chunk	GA-AS-05-CK
(5N) 99.999% Gallium Arsenide Lump	GA-AS-05-L
(5N) 99.999% Gallium Arsenide Sputtering Target	GA-AS-05-ST
(5N) 99.999% Gallium Arsenide Wafer	GA-AS-05-WSX

Gallium Arsenide is a semiconductor with superior electronic properties to silicon. It has a higher saturated electron velocity and higher electron mobility, allowing it to function at microwave frequencies. American Elements produces to many standard grades when applicable, including Mil Spec (military grade); ACS, Reagent and Technical Grade; Food, Agricultural and Pharmaceutical Grade; Optical Grade, USP and EP/BP (European Pharmacopoeia/British Pharmacopoeia) and follows applicable ASTM testing standards. Typical and custom packaging is available. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.

Gallium is a Block P, Group 13, Period 4 element. The number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electronic configuration is [Ar] 3d¹⁰ 4s² 4p¹. In its elemental form gallium's CAS number is 7440-55-3. The gallium atom has a radius of 122.1.pm and it's Van der Waals radius is 187.pm. Gallium is not toxic. Gallium is one of three elements that naturally occur as a liquid at room temperature. The other two are mercury and cesium. The application of gallium that has received the most attention is the production of semiconducting compounds. Of these, the most important are the compounds of gallium with antimony, arsenic or phosphor. Nowadays gallium arsenide (Ga-As) is undoubtedly the most used. This compound is used in the production of several electronic parts such as diodes and transistors, made for voltage rectification, signal amplification, etc. Other gallium arsenide applications are the semiconductor "lasing" and microwave generation and also in sensors to measure temperature, light or magnetic field. Researchers at Northwestern University's Center for Quantum Devices recently developed a Gallium based semiconductor material that will advance infrared camera technology. Gallium does not exist by itself in nature and is sourced commercially from bauxite and sphalerite. Gallium was first discovered by Hans Christian Oersted in 1825. See Gallium research below.

Arsenic is a Block P, Group 15, Period 4 element. The number of electrons in each of Arsenic's shells is 2, 8, 18, 5 and its electronic configuration is [Ar] 3d¹⁰ 4s² 4p³. In its elemental form arsenic's CAS number is 1327-53-3. The arsenic atom has a radius of 124.5.pm and its Van der Waals radius is 185.pm. Though inorganic arsenic is extremely toxic, even in very small amounts, other forms of arsenic have proven safe and even potentially beneficial to humans: a study released in August 2012 by doctors at the Harbin Medical University Hospital in Harbin, China suggests that Arsenic Trioxide (As₂O₃) is an effective treatment for patients diagnosed with acute promyelocytic leukemia (APL). Arsenic has numerous applications as a semiconductor and other electronic applications as Indium arsenide, silicon arsenide and tin arsenide. Arsenic is finding increasing uses as a doping agent in solid-state devices such as transistors. Gallium arsenide is used as a laser material to convert electricity directly into coherent light. Arsenic is used in bronzing and for hardening and improving the sphericity of shot. Due to their toxicity, arsenic compounds are used in insecticides and wood preservation. Arsenic is available as metal and compounds with purities from 99% to 99.9999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. Arsenic is found in numerous minerals including arsenolite (As₂O₃), arsenopyrite (FeAsS), loellingite (FeAs₂), orpiment (As₂S₃), and realgar (As₄S₄). Arsenic information, including Technical Data, Safety Data, and its High Purity properties, research, applications and other useful facts are discussed here. Scientific facts such as the atomic structure, ionization energy, abundance on Earth, conductivity and thermal properties are included. See Arsenic research below.

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Recent Research & Development for Gallium

• The Effect of Erbium, Chromium:Yttrium-Scandium-Gallium-Garnet (Er,Cr:YSGG) Laser Therapy on Pain During Cavity Preparation in Paediatric Dental Patients: A Pilot Study. Eren F, Altinok B, Ertugral F, Tanboga I. Oral Health Dent Manag. 2013 Jun;12(2):80-4. PMID: 23756423 [PubMed - in process] Related citations Select item 237455782. Cell Behavior on Gallium Nitride Surfaces: Peptide Affinity Attachment Vs. Covalent Functionalization. Foster C, Collazo R, Sitar Z, Ivanisevic A. Langmuir. 2013 Jun 7. [Epub ahead of print] PMID: 23745578 [PubMed - as supplied by publisher] Related citations Select item 237385343. Chemical Stability and Electrical Performance of Dual-Active-Layered Zinc-Tin-Oxide/Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using a Solution Process. Kim CH, Rim YS, Kim HJ. ACS Appl Mater Interfaces. 2013 Jun 5.
• Lacrimal Gland Uptake of ⁶⁷Ga-gallium Citrate Correlates with Biopsy Results in Patients with Suspected Sarcoidosis. Tannen BL, Kolomeyer AM, Turbin RE, Frohman L, Langer PD, Oh C, Ghesani NV, Zuckier LS, Chu DS. Ocul Immunol Inflamm. 2013 Jun 3.
• Gallium-containing phosphosilicate glasses: Functionalization and in-vitro bioactivity. Lusvardi G, Malavasi G, Menabue L, Shruti S. Mater Sci Eng C Mater Biol Appl. 2013 Aug 1;33(6):3190-6. doi: 10.1016/j.msec.2013.03.046.
• Evaluation of the carcinogenicity of gallium arsenide. Bomhard EM, Gelbke HP, Schenk H, Williams GM, Cohen SM. Crit Rev Toxicol. 2013 May;43(5):436-66. doi: 10.3109/10408444.2013.792329.
• Influence of gallium-doped zinc-oxide thickness on polymer light-emitting diode luminescence efficiency. Chen SH, Chen WC, Yu CF, Lin CF, Kao PC. Microsc Res Tech. 2013 May 16. doi: 10.1002/jemt.22229.
• Protective effects of gallium, germanium, and strontium against ovariectomized osteoporosis in rats. Qin DW, Gu Z, Dai L, Ji C. Biol Trace Elem Res. 2013 Jun;153(1-3):350-4. doi: 10.1007/s12011-013-9694-8.
• Liquid-phase gallium-indium alloy electronics with microcontact printing. Tabatabai A, Fassler A, Usiak C, Majidi C. Langmuir. 2013 May 21;29(20):6194-200. doi: 10.1021/la401245d.
• Ultraviolet nanoplasmonics: a demonstration of surface-enhanced Raman spectroscopy, fluorescence, and photodegradation using gallium nanoparticles. Yang Y, Callahan JM, Kim TH, Brown AS, Everitt HO. Nano Lett. 2013 Jun 12;13(6):2837-41. doi: 10.1021/nl401145j.
• Less May Be as Good as More: Feasible and Effective Method to Differentiate Gastric Uptake Solely on Planar Gallium Scan in the Era of SPECT/CT. Chen YR, Wu YC, Kao CH, Hsieh TC, Sun SS. Clin Nucl Med. 2013 Jul;38(7):557-9. doi: 10.1097/RLU.0b013e318292ee82.
• Unprecedented gallium-nitrogen anions: synthesis and characterization of [(Cl3Ga)3N](3-) and [(Cl3Ga)2NSnMe3](2-). Wilson RJ, Jones JR, Bennett MV. Chem Commun (Camb). 2013 Jun 4;49(44):5049-51. doi: 10.1039/c3cc41897a.
• Catalysis of Alkene Epoxidation by a Series of Gallium(III) Complexes with Neutral N-Donor Ligands. Jiang W, Gorden JD, Goldsmith CR. Inorg Chem. 2013 May 20;52(10):5814-23. doi: 10.1021/ic400570h.
• Gallium-68 DOTANOC imaging in paraganglioma/pheochromocytoma: presentation of sample cases and review of the literature. Lopci E, Zanoni L, Fanti S, Ambrosini V, Castellani MR, Aktolun C, Chiti A. Q J Nucl Med Mol Imaging. 2013 Apr 18.
• Pre-treatment with EDTA-gallium prevents the formation of biofilms on surfaces. Zhu Y, Jin F, Yang S, Li J, Hu D, Liao L. Exp Ther Med. 2013 Apr;5(4):1001-1004.
• New Alkali-Metal Gallium Selenites, AGa(SeO3)2 (A = Li, Na, K, and Cs): Effect of Cation Size on the Framework Structures and Macroscopic Centricities. Lee DW, Ok KM. Inorg Chem. 2013 May 6;52(9):5176-84. doi: 10.1021/ic400458a.
• Repeatability of Gallium-68 DOTATOC Positron Emission Tomographic Imaging in Neuroendocrine Tumors. Menda Y, Ponto LL, Schultz MK, Zamba GK, Watkins GL, Bushnell DL, Madsen MT, Sunderland JJ, Graham MM, O'Dorisio TM, O'Dorisio MS. Pancreas. 2013 Apr 12.
• Reply to Reske et al.: PET imaging with a [(68)Ga]gallium-labelled PSMA ligand for the diagnosis of prostate cancer: biodistribution in humans and first evaluation of tumour lesions. Afshar-Oromieh A, Malcher A, Eder M, Eisenhut M, Linhart HG, Hadaschik BA, Holland-Letz T, Giesel FL, Kratochwil C, Haufe S, Haberkorn U, Zechmann CM. Eur J Nucl Med Mol Imaging. 2013 Jun;40(6):971-2. doi: 10.1007/s00259-013-2386-y.
• Comment on Afshar-Oromieh et al.: PET imaging with a [(68)Ga]gallium-labelled PSMA ligand for the diagnosis of prostate cancer: biodistribution in humans and first evaluation of tumour lesions. Reske SN, Winter G, Baur B, Machulla HJ, Kull T. Eur J Nucl Med Mol Imaging. 2013 Jun;40(6):969-70. doi: 10.1007/s00259-013-2385-z.
• Unusual tilted carbene coordination in carbene complexes of gallium(I) and indium(I). Higelin A, Keller S, Göhringer C, Jones C, Krossing I. Angew Chem Int Ed Engl. 2013 Apr 26;52(18):4941-4. doi: 10.1002/anie.201209757

Recent Research & Development for Arsenides

• Homologous Series of Rare-Earth Zinc Arsenides REZn_2-xAs₂�n(REAs) (RE = La-Nd, Sm; n = 3, 4, 5, 6). Lin X, Mar A. Inorg Chem. 2013 May 28.
• Evaluation of the carcinogenicity of gallium arsenide. Bomhard EM, Gelbke HP, Schenk H, Williams GM, Cohen SM. Crit Rev Toxicol. 2013 May;43(5):436-66. doi: 10.3109/10408444.2013.792329.
• Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics. Cheng CW, Shiu KT, Li N, Han SJ, Shi L, Sadana DK. Nat Commun. 2013;4:1577. doi: 10.1038/ncomms2583.
• Transmetalation of chromocene by lithium-amide, -phosphide, and -arsenide nucleophiles. Scheuermayer S, Tuna F, Pineda EM, Bodensteiner M, Scheer M, Layfield RA. Inorg Chem. 2013 Apr 1;52(7):3878-83. doi: 10.1021/ic3025815.
• Quaternary arsenides AM(1.5)Tt(0.5)As2 (A = Na, K, Rb; M = Zn, Cd; Tt = Si, Ge, Sn): size effects in CaAl2Si2- and ThCr2Si2-type structures. Khatun M, Stoyko SS, Mar A. Inorg Chem. 2013 Mar 18;52(6):3148-58. doi: 10.1021/ic302627n.
• Magnetic ordering in tetragonal 3d metal arsenides M2As (M = Cr, Mn, Fe): an ab initio investigation. Zhang Y, Brgoch J, Miller GJ. Inorg Chem. 2013 Mar 18;52(6):3013-21. doi: 10.1021/ic3024716.
• Effect of doping on the magnetostructural ordered phase of iron arsenides: a comparative study of the resistivity anisotropy in doped BaFe2As2 with doping into three different sites. Ishida S, Nakajima M, Liang T, Kihou K, Lee CH, Iyo A, Eisaki H, Kakeshita T, Tomioka Y, Ito T, Uchida S. J Am Chem Soc. 2013 Feb 27;135(8):3158-63. doi: 10.1021/ja311174e.
• [A matrix gallium-arsenide detector for roentgenoraphy]. Vorob'ev AP, Golovnia SN, Gorokhov SA, Parahin VV, Polkovnikov MK, Aizenshtat GI, Lelekov MA, Koretskaia OV, Novikov VA, Tolbanov OP, Tiazhev AV, Borodin DV, Osipov IuV. Med Tekh. 2012 Sep-Oct;(5):21-6.
• CaBe2Ge2 type phosphides REIr2P2 (RE = La-Nd, Sm) and arsenides REIr2As2 (RE = La-Nd): synthesis, structure, and solid state NMR spectroscopy. Pfannenschmidt U, Behrends F, Lincke H, Eul M, Sch�fer K, Eckert H, P�ttgen R. Dalton Trans. 2012 Dec 14;41(46):14188-96. doi: 10.1039/c2dt31874a.
• Susceptibility anisotropy in an iron arsenide superconductor revealed by x-ray diffraction in pulsed magnetic fields. Ruff JP, Chu JH, Kuo HH, Das RK, Nojiri H, Fisher IR, Islam Z. Phys Rev Lett. 2012 Jul 13;109(2):027004.
• Universal heat conduction in the iron arsenide superconductor KFe2As2: evidence of a d-wave state. Reid JP, Tanatar MA, Juneau-Fecteau A, Gordon RT, de Cotret SR, Doiron-Leyraud N, Saito T, Fukazawa H, Kohori Y, Kihou K, Lee CH, Iyo A, Eisaki H, Prozorov R, Taillefer L. Phys Rev Lett. 2012 Aug 24;109(8):087001.
• Ternary arsenides A2Zn5As4 (A = K, Rb): zintl phases built from stellae quadrangulae. Stoyko SS, Khatun M, Mar A. Inorg Chem. 2012 Sep 3;51(17):9517-21. doi: 10.1021/ic301311m.
• Divergent nematic susceptibility in an iron arsenide superconductor. Chu JH, Kuo HH, Analytis JG, Fisher IR. Science. 2012 Aug 10;337(6095):710-2. doi: 10.1126/science.1221713. Erratum in: Science. 2012 Oct 26;338(6106):469.
• Two-dome structure in electron-doped iron arsenide superconductors. Iimura S, Matuishi S, Sato H, Hanna T, Muraba Y, Kim SW, Kim JE, Takata M, Hosono H. Nat Commun. 2012 Jul 10;3:943. doi: 10.1038/ncomms1913.
• Optically rewritable patterns of nuclear magnetization in gallium arsenide. King JP, Li Y, Meriles CA, Reimer JA. Nat Commun. 2012 Jun 26;3:918. doi: 10.1038/ncomms1918.
• Evaluation of the male reproductive toxicity of gallium arsenide. Bomhard EM, Cohen SM, Gelbke HP, Williams GM. Regul Toxicol Pharmacol. 2012 Oct;64(1):77-86. doi: 10.1016/j.yrtph.2012.06.005.
• Synthesis and characterization of a p-type boron arsenide photoelectrode. Wang S, Swingle SF, Ye H, Fan FR, Cowley AH, Bard AJ. J Am Chem Soc. 2012 Jul 11;134(27):11056-9. doi: 10.1021/ja301765v.
• Coherent detection of THz waves based on THz-induced time-resolved luminescence quenching in bulk gallium arsenide. Chu Z, Liu J, Wang K. Opt Lett. 2012 May 1;37(9):1433-5. doi: 10.1364/OL.37.001433.
• Symmetry analysis of the structural and magnetic phase transitions in 122 iron arsenides. Howard CJ, Carpenter MA. Acta Crystallogr B. 2012 Apr;68(Pt 2):209-12. doi: 10.1107/S0108768112008294.
• Wet chemical functionalization of III-V semiconductor surfaces: alkylation of gallium arsenide and gallium nitride by a Grignard reaction sequence. Peczonczyk SL, Mukherjee J, Carim AI, Maldonado S. Langmuir. 2012 Mar 13;28(10):4672-82. doi: 10.1021/la204698a.

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