Gallium Arsenide

High Purity GaAs
CAS 1303-00-0


Product Product Code Order or Specifications
(5N) 99.999% Gallium Arsenide Powder GA-AS-05-P Contact American Elements
(5N) 99.999% Gallium Arsenide Ingot GA-AS-05-I Contact American Elements
(5N) 99.999% Gallium Arsenide Chunk GA-AS-05-CK Contact American Elements
(5N) 99.999% Gallium Arsenide Lump GA-AS-05-L Contact American Elements
(5N) 99.999% Gallium Arsenide Sputtering Target GA-AS-05-ST Contact American Elements
(5N) 99.999% Gallium Arsenide Wafer GA-AS-05-WSX Contact American Elements

CHEMICAL
IDENTIFIER
Formula CAS No. PubChem CID MDL No. EC No IUPAC Name Beilstein
Re. No.
SMILES
Identifier
InChI
Identifier
InChI
Key
GaAs 1303-00-0 14770 MFCD00011017 215-114-8 gallanylidynearsane N/A [As]#[Ga] InChI=1S/As.Ga JBRZTFJDHDCESZ-UHFFFAOYSA-N

PROPERTIES Compound Formula Mol. Wt. Appearance Melting
Point
Boiling
Point
Density

Exact Mass

Monoisotopic Mass Charge MSDS
AsGa 144.64 Gray crystalline solid 1238°C N/A 5.32 g/cm3 143.84717 143.84717 0 Safety Data Sheet

Arsenide IonGallium Arsenide is a semiconductor with superior electronic properties to silicon. It has a higher saturated electron velocity and higher electron mobility, allowing it to function at microwave frequencies. American Elements produces to many standard grades when applicable, including Mil Spec (military grade); ACS, Reagent and Technical Grade; Food, Agricultural and Pharmaceutical Grade; Optical Grade, USP and EP/BP (European Pharmacopoeia/British Pharmacopoeia) and follows applicable ASTM testing standards. Typical and custom packaging is available. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.

Gallium (Ga) atomic and molecular weight, atomic number and elemental symbolGallium (atomic symbol: Ga, atomic number: 31) is a Block P, Group 13, Period 4 element with an atomic weight of 69.723. Gallium Bohr ModelThe number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electron configuration is [Ar] 3d10 4s2 4p1. The gallium atom has a radius of 122.1 pm and a Van der Waals radius of 187 pm. Gallium was predicted by Dmitri Mendeleev in 1871. It was first discovered and isolated by Hans Christian Oersted in 1825. Elemental Gallium In its elemental form, gallium has a silvery appearance. Gallium is one of three elements that occur naturally as a liquid at room temperature, the other two being mercury and cesium. Gallium does not exist as a free element in nature and is sourced commercially from bauxite and sphalerite. Currently, gallium is used in semiconductor materials for microelectronics and optics. The element name originates from the Latin word 'Gallia', the old name of France, and the word 'Gallus,' meaning rooster. For more information on gallium, including properties, safety data, research, and American Elements' catalog of gallium products, visit the Gallium Information Center.

Arsenic Bohr ModelArsenic (As) atomic and molecular weight, atomic number and elemental symbolArsenic (atomic symbol: As, atomic number: 33) is a Block P, Group 15, Period 4 element with an atomic radius of 74.92160. The number of electrons in each of arsenic's shells is 2, 8, 18, 5 and its electron configuration is [Ar] 3d10 4s2 4p3. The arsenic atom has a radius of 119 pm and a Van der Waals radius of 185 pm. Arsenic was discovered in the early Bronze Age, circa 2500 BC. It was first isolated by Albertus Magnus in 1250 AD. In its elemental form, arsenic is a metallic grey, brittle, crystalline, semimetallic solid.Elemental Arsenic Arsenic is found in numerous minerals including arsenolite (As2O3), arsenopyrite (FeAsS), loellingite (FeAs2), orpiment (As2S3), and realgar (As4S4). Arsenic has numerous applications as a semiconductor and other electronic applications as indium arsenide, silicon arsenide and tin arsenide. Arsenic is finding increasing uses as a doping agent in solid-state devices such as transistors. For more information on arsenic, including properties, safety data, research, and American Elements' catalog of arsenic products, visit the Arsenic Information Center.


HEALTH, SAFETY & TRANSPORTATION INFORMATION
Material Safety Data Sheet MSDS
Signal Word Danger
Hazard Statements H301 + H331-H410
Hazard Codes T,N
Risk Codes 23/25-50/53
Safety Precautions 20/21-28-45-60-61
RTECS Number LW8800000
Transport Information UN 1557 6.1/PG 2
WGK Germany 3
Globally Harmonized System of
Classification and Labelling (GHS)
Skull and Crossbones-Acute Toxicity  Environment-Hazardous to the aquatic environment      

GALLIUM ARSENIDE SYNONYMS
Gallium monoarsenide; Arsinidynegallium; gallanylidynearsane

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PACKAGING SPECIFICATIONS FOR BULK & RESEARCH QUANTITIES
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.


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Request an MSDS or Certificate of Analysis





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Recent Research & Development for Gallium

  • V.V. Serikov, N.M. Kleinerman, A.V. Vershinin, N.V. Mushnikov, A.V. Protasov, L.A. Stashkova, O.I. Gorbatov, A.V. Ruban, Yu.N. Gornostyrev, Formation of solid solutions of gallium in Fe–Cr and Fe–Co alloys: Mössbauer studies and first-principles calculations, Journal of Alloys and Compounds, Volume 614, 25 November 2014
  • Jae-Hun Jeong, Dong-Won Jung, Eun-Suok Oh, Lithium storage characteristics of a new promising gallium selenide anodic material, Journal of Alloys and Compounds, Volume 613, 15 November 2014
  • Jia Liu, Weijia Zhang, Dengyuan Song, Qiang Ma, Lei Zhang, Hui Zhang, Xiaobo Ma, Haiyang Song, Gallium-doped zinc oxide targets fabricated by sintering: Impact of target quality on sputtered thin film properties, Materials Science in Semiconductor Processing, Volume 27, November 2014
  • O. Toma, S. Georgescu, Excited-state absorption in erbium-doped calcium lithium niobium gallium garnet, Journal of Luminescence, Volume 154, October 2014
  • Jiming Bian, Lihua Miao, Fuwen Qin, Dong Zhang, Weifeng Liu, Hongzhu Liu, Low-temperature ECR-PEMOCVD deposition of high-quality crystalline gallium nitride films: A comparative study of intermediate layers for growth on amorphous glass substrates, Materials Science in Semiconductor Processing, Volume 26, October 2014
  • Liangliang Huang, Yong Fan, Hongwei Ma, Caixia Li, Li Wang, Synthesis and characterizations of two NbO topological gallium phosphites with low framework density, Microporous and Mesoporous Materials, Volume 196, 15 September 2014
  • Jianwei Wang, Alberto Santamato, Pisu Jiang, Damien Bonneau, Erman Engin, Joshua W. Silverstone, Matthias Lermer, Johannes Beetz, Martin Kamp, Sven Höfling, Michael G. Tanner, Chandra M. Natarajan, Robert H. Hadfield, Sander N. Dorenbos, Val Zwiller, Jeremy L. O’Brien, Mark G. Thompson, Gallium arsenide (GaAs) quantum photonic waveguide circuits, Optics Communications, Volume 327, 15 September 2014
  • Wyatt H. Strong, David V. Forbes, Seth M. Hubbard, Investigation of deep level defects in electron irradiated indium arsenide quantum dots embedded in a gallium arsenide matrix, Materials Science in Semiconductor Processing, Volume 25, September 2014
  • Somayeh Behzad, Raad Chegel, Rostam Moradian, Masoud Shahrokhi, Theoretical exploration of structural, electro-optical and magnetic properties of gallium-doped silicon carbide nanotubes, Superlattices and Microstructures, Volume 73, September 2014
  • Elissa H. Williams, Albert V. Davydov, Vladimir P. Oleshko, Kristen L. Steffens, Igor Levin, Nancy J. Lin, Kris A. Bertness, Amy K. Manocchi, John A. Schreifels, Mulpuri V. Rao, Solution-based functionalization of gallium nitride nanowires for protein sensor development, Surface Science, Volume 627, September 2014
  • H.V. Thanh Luong, J.C. Liu, Flotation separation of gallium from aqueous solution – Effects of chemical speciation and solubility, Separation and Purification Technology, Volume 132, 20 August 2014
  • Yin-Rou Huang, Tzu-Wei Huang, Tzu-Hui Wang, Yu-Chen Tsai, Improved performance of dye-sensitized solar cells using gallium nitride–titanium dioxide composite photoelectrodes, Journal of Colloid and Interface Science, Volume 428, 15 August 2014
  • Esma Senel, John C. Walmsley, Spyros Diplas, Kemal Nisancioglu, Liquid metal embrittlement of aluminium by segregation of trace element gallium, Corrosion Science, Volume 85, August 2014
  • Esma Senel, Kemal Nisancioglu, Role of dealloying on the electrochemical behaviour of aluminium alloyed with trace amounts of gallium, Corrosion Science, Volume 85, August 2014
  • N. Sengouga, Af. Meftah, Am. Meftah, M. Henini, Numerical simulation of the response of substrate traps to a voltage applied to the gate of a gallium arsenide field effect transistor, Materials Science in Semiconductor Processing, Volume 24, August 2014
  • K. Aravinth, G. Anandha Babu, P. Ramasamy, Silver gallium telluride (AgGaTe2) single crystal: Synthesis, accelerated crucible rotation-Bridgman growth and characterization, Materials Science in Semiconductor Processing, Volume 24, August 2014
  • Zhenghua Xiao, Jianzhang Li, Junbo Zhong, Wei Hu, Jun Zeng, Shengtian Huang, Xiaolin Lu, Jinjin He, Minjiao Li, Enhanced photocatalytic decolorization of methyl orange by gallium-doped a-Fe2O3, Materials Science in Semiconductor Processing, Volume 24, August 2014
  • Rongsheng Chen, Wei Zhou, Meng Zhang, Hoi-Sing Kwok, Self-aligned indium–gallium–zinc oxide thin-film transistors with SiNx/SiO2/SiNx/SiO2 passivation layers, Thin Solid Films, Volume 564, 1 August 2014
  • Erkan Aydin, Mehmet Sankir, Nurdan Demirci Sankir, Conventional and Rapid Thermal Annealing of Spray Pyrolyzed Copper Indium Gallium Sulfide Thin Films, Journal of Alloys and Compounds, Available online 7 July 2014
  • Muthumuni Managa, Edith Antunes, Tebello Nyokong, Conjugates of platinum nanoparticles with gallium tetra – (4-Carboxyphenyl) porphyrin and their use in photodynamic antimicrobial chemotherapy when in solution or embedded in electrospun fiber, Polyhedron, Volume 76, 7 July 2014

Recent Research & Development for Arsenides

  • Jianwei Wang, Alberto Santamato, Pisu Jiang, Damien Bonneau, Erman Engin, Joshua W. Silverstone, Matthias Lermer, Johannes Beetz, Martin Kamp, Sven Höfling, Michael G. Tanner, Chandra M. Natarajan, Robert H. Hadfield, Sander N. Dorenbos, Val Zwiller, Jeremy L. O’Brien, Mark G. Thompson, Gallium arsenide (GaAs) quantum photonic waveguide circuits, Optics Communications, Volume 327, 15 September 2014
  • Wyatt H. Strong, David V. Forbes, Seth M. Hubbard, Investigation of deep level defects in electron irradiated indium arsenide quantum dots embedded in a gallium arsenide matrix, Materials Science in Semiconductor Processing, Volume 25, September 2014
  • Ali A. Orouji, Mohammad Nejaty, Alireza Mohtasham, Novel Indium Arsenide double gate and gate all around nanowire MOSFETs for diminishing the exchange correlation effect: A quantum study, Physica E: Low-dimensional Systems and Nanostructures, Volume 63, September 2014
  • l
  • N. Sengouga, Af. Meftah, Am. Meftah, M. Henini, Numerical simulation of the response of substrate traps to a voltage applied to the gate of a gallium arsenide field effect transistor, Materials Science in Semiconductor Processing, Volume 24, August 2014
  • Luca Bindi, Marian Tredoux, Federica Zaccarini, Duncan E. Miller, Giorgio Garuti, Non-stoichiometric nickel arsenides in nature: The structure of orcelite, Ni5−xAs2 (x = 0.25), from the Bon Accord oxide body, South Africa, Journal of Alloys and Compounds, Volume 601, 15 July 2014
  • Seong-Uk Yang, Woo-Shik Jung, In-Yeal Lee, Hyun-Wook Jung, Gil-Ho Kim, Jin-Hong Park, Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO), Materials Research Bulletin, Volume 50, February 2014
  • Xinlong Chen, Jing Zhao, Benkang Chang, Guanghui Hao, Yuan Xu, Yijun Zhang, Muchun Jin, Roles of cesium and oxides in the processing of gallium aluminum arsenide photocathodes, Materials Science in Semiconductor Processing, Volume 18, February 2014
  • Andrzej Wolkenberg, Hall measurements of n-indium arsenide MBE-deposited layers: Relevance to device processing and applications, Materials Science in Semiconductor Processing, Volume 18, February 2014
  • M. Parhizkar, S. Mohammadi Aref, M. Ghafouri, A. Olad, H. Bidadi, Correlation between sintering pressure and electrical properties of hot-press sintered gallium arsenide-polyaniline-polyethylene composite varistors, Materials Science in Semiconductor Processing, Volume 17, January 2014
  • Abdollah Abbasi, Ali A. Orouji, A silicon/indium arsenide source structure to suppress the parasitic bipolar-induced breakdown effect in SOI MOSFETs, Materials Science in Semiconductor Processing, Volume 16, Issue 6, December 2013