Skip to Page Content

Gallium Ingot

High Purity Ga Metal Ingots
CAS 7440-55-3

Product Product Code Request Quote
(2N) 99% Gallium Ingot GA-M-02-I Request Quote
(3N) 99.9% Gallium Ingot GA-M-03-I Request Quote
(4N) 99.99% Gallium Ingot GA-M-04-I Request Quote
(5N) 99.999% Gallium Ingot GA-M-05-I Request Quote
(6N) 99.9999% Gallium Ingot GA-M-06-I Request Quote
(7N) 99.99999% Gallium Ingot GA-M-07-I Request Quote

Formula CAS No. PubChem CID MDL No. EC No Beilstein
Re. No.
Ga 7440-55-3 23981 MFCD00134045 231-163-8 N/A [Ga] InChI=1S/Ga GYHNNYVSQQEPJS-UHFFFAOYSA-N

PROPERTIES Mol. Wt. Appearance Density Tensile Strength Melting Point Boiling Point Thermal Conductivity Electrical Resistivity Electronegativity Specific Heat Heat of Vaporization Heat of Fusion MSDS
69.72 Silvery 5.91 g/cm3 N/A 29.78 °C 2403 °C 0.281 W/cm·K
(302.93 K)
17.4 µΩ·cm
1.81 Pauings 0.089 Cal/g/K
254 kJ/mol 5.59 kJ/mol Safety Data Sheet

Ultra High Purity IngotAmerican Elements produces metallic Gallium Ingots with the highest possible density. Ingots are generally the least costly metallic form and useful in general applications. Our standard Ingot size is nominally 2-3 cm x 3-8 cm x 6-12 cm. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar, or plate form, as well as other machined shapes and through other processes such as nanoparticles () and in the form of solutions and organometallics. We also produce Gallium as chunk, ingot, pellets, specimen, and in compound forms, such as oxide. Other shapes are available by request.

Gallium (Ga) atomic and molecular weight, atomic number and elemental symbolGallium (atomic symbol: Ga, atomic number: 31) is a Block P, Group 13, Period 4 element with an atomic weight of 69.723.The number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electron configuration is [Ar] 3d10 4s2 4p1. The gallium atom has a radius of 122.1 pm and a Van der Waals radius of 187 pm. Gallium Bohr ModelGallium was predicted by Dmitri Mendeleev in 1871. It was first discovered and isolated by Lecoq de Boisbaudran in 1875. In its elemental form, gallium has a silvery appearance. Elemental GalliumGallium is one of three elements that occur naturally as a liquid at room temperature, the other two being mercury and cesium. Gallium does not exist as a free element in nature and is sourced commercially from bauxite and sphalerite. Currently, gallium is used in semiconductor devices for microelectronics and optics. The element name originates from the Latin word 'Gallia', the old name of France, and the word 'Gallus,' meaning rooster. For more information on gallium, including properties, safety data, research, and American Elements' catalog of gallium products, visit our Gallium element page.

UN 2803 8/PG 3
Corrosion-Corrosive to metals        

Gallium Acetylacetonate Gallium Acetate Gallium Fluoride Gallium Antimonide Triethylgallium
Copper Indium Gallium Selenide - CIGS Gallium Arsenide Gallium Oxide Nanopowder Gallium Oxide Powder Gallium Nitride Wafer
Gadolinium Gallium Garnet - GGG Copper Gallium Sputtering Target Trimethylgallium Gallium doped Zinc Oxide - GZO Gallium Oxide
Show Me MORE Forms of Gallium

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.

Have a Question? Ask a Chemical Engineer or Material Scientist
Request an MSDS or Certificate of Analysis

Recent Research & Development for Gallium

  • Nanoscale Optical Properties of Indium Gallium Nitride/Gallium Nitride Nanodisk-in-Rod Heterostructures. Xiang Zhou, Ming-Yen Lu, Yu-Jung Lu, Eric J. Jones, Shangjr Gwo, and Silvija Grade?ak. ACS Nano: February 7, 2015
  • Gallium Plasmonics: Deep Subwavelength Spectroscopic Imaging of Single and Interacting Gallium Nanoparticles. Mark W. Knight, Toon Coenen, Yang Yang, Benjamin J. M. Brenny, Maria Losurdo, April S. Brown, Henry O. Everitt, and Albert Polman. ACS Nano: January 28, 2015
  • Influence of Source and Drain Contacts on the Properties of Indium–Gallium–Zinc-Oxide Thin-Film Transistors based on Amorphous Carbon Nanofilm as Barrier Layer. Dongxiang Luo, Hua Xu, Mingjie Zhao, Min Li, Miao Xu, Jianhua Zou, Hong Tao, Lei Wang, and Junbiao Peng. ACS Appl. Mater. Interfaces: January 26, 2015
  • Insertion of Benzonitrile into Al–N and Ga–N Bonds: Formation of Fused Carbatriaza-Gallanes/Alanes and Their Subsequent Synthesis from Amidines and Trimethyl-Gallium/Aluminum. K. Maheswari, A. Ramakrishna Rao, and N. Dastagiri Reddy. Inorg. Chem.: January 26, 2015
  • Mixed Pentele-Chalcogen Cationic Chains from Aluminum and Gallium Halide Melts. Andreas Eich, Thomas Bredow, and Johannes Beck. Inorg. Chem.: December 30, 2014
  • Temperature Dependent EXAFS Study of Chromium-Doped GaFeO3 at Gallium and Iron Edges. S. Basu, Ripandeep Singh, A. Das, T. Roy, A. Chakrabarti, A. K. Nigam, S. N. Jha, and D. Bhattacharyya. J. Phys. Chem. C: December 24, 2014
  • Solvothermal Synthesis of Gallium–Indium-Zinc-Oxide Nanoparticles for Electrolyte-Gated Transistors. Lídia Santos, Daniela Nunes, Tomás Calmeiro, Rita Branquinho, Daniela Salgueiro, Pedro Barquinha, Luís Pereira, Rodrigo Martins, and Elvira Fortunato. ACS Appl. Mater. Interfaces: December 17, 2014
  • Surface Characterization of Gallium Nitride Modified with Peptides before and after Exposure to Ionizing Radiation in Solution. Nora G. Berg, Michael W. Nolan, Tania Paskova, and Albena Ivanisevic. Langmuir: December 5, 2014
  • Influence of Water on the Interfacial Behavior of Gallium Liquid Metal Alloys. Mohammad R. Khan, Chris Trlica, Ju-Hee So, Michael Valeri, and Michael D. Dickey. ACS Appl. Mater. Interfaces: December 3, 2014
  • Low-Temperature Growth of Crystalline Gallium Nitride Films Using Vibrational Excitation of Ammonia Molecules in Laser-Assisted Metalorganic Chemical Vapor Deposition. Hossein Rabiee Golgir, Yang Gao, Yun Shen Zhou, Lisha Fan, Premkumar Thirugnanam, Kamran Keramatnejad, Lan Jiang, Jean-François Silvain, and Yong Feng Lu. Crystal Growth & Design: November 11, 2014