Gallium Ingot

High Purity Ga Metal Ingots
CAS 7440-55-3


Product Product Code Order or Specifications
(2N) 99% Gallium Ingot GA-M-02-I Contact American Elements
(3N) 99.9% Gallium Ingot GA-M-03-I Contact American Elements
(4N) 99.99% Gallium Ingot GA-M-04-I Contact American Elements
(5N) 99.999% Gallium Ingot GA-M-05-I Contact American Elements
(6N) 99.9999% Gallium Ingot GA-M-06-I Contact American Elements
(7N) 99.99999% Gallium Ingot GA-M-07-I Contact American Elements

CHEMICAL
IDENTIFIER
Formula CAS No. PubChem CID MDL No. EC No Beilstein
Re. No.
SMILES
Identifier
InChI
Identifier
InChI
Key
Ga 7440-55-3 23981 MFCD00134045 231-163-8 N/A [Ga] InChI=1S/Ga GYHNNYVSQQEPJS-UHFFFAOYSA-N

PROPERTIES Mol. Wt. Appearance Density Tensile Strength Melting Point Boiling Point Thermal Conductivity Electrical Resistivity Electronegativity Specific Heat Heat of Vaporization Heat of Fusion MSDS
69.72 Silvery 5.91 g/cm3 N/A 29.78 °C 2403 °C 0.281 W/cm·K
(302.93 K)
17.4 µΩ·cm
(20°C)
1.81 Pauings 0.089 Cal/g/K
(25°C)
254 kJ/mol 5.59 kJ/mol Safety Data Sheet

Ultra High Purity IngotAmerican Elements produces metallic Gallium Ingots with the highest possible density. Ingots are generally the least costly metallic form and useful in general applications. Our standard Ingot size is nominally 2-3 cm x 3-8 cm x 6-12 cm. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles (See also application discussion at Nanotechnology Information and at Quantum Dots) and in the form of solutions and organometallics. We also produce Gallium as chunk, ingot, pellets, specimen, and in compound forms, such as oxide. Other shapes are available by request.

Gallium (Ga) atomic and molecular weight, atomic number and elemental symbolGallium (atomic symbol: Ga, atomic number: 31) is a Block P, Group 13, Period 4 element with an atomic weight of 69.723.The number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electron configuration is [Ar] 3d10 4s2 4p1. The gallium atom has a radius of 122.1 pm and a Van der Waals radius of 187 pm. Gallium Bohr ModelGallium was predicted by Dmitri Mendeleev in 1871. It was first discovered and isolated by Lecoq de Boisbaudran in 1875. In its elemental form, gallium has a silvery appearance. Elemental GalliumGallium is one of three elements that occur naturally as a liquid at room temperature, the other two being mercury and cesium. Gallium does not exist as a free element in nature and is sourced commercially from bauxite and sphalerite. Currently, gallium is used in semiconductor materials for microelectronics and optics. The element name originates from the Latin word 'Gallia', the old name of France, and the word 'Gallus,' meaning rooster. For more information on gallium, including properties, safety data, research, and American Elements' catalog of gallium products, visit our Periodic Table of the Elements: Gallium Information Page.

HEALTH, SAFETY & TRANSPORTATION INFORMATION
Danger
H314
C
34
26-36/37/39-45
LW8600000
UN 2803 8/PG 3
3
Corrosion-Corrosive to metals        

CUSTOMERS FOR GALLIUM INGOTS HAVE ALSO LOOKED AT
Gallium Acetylacetonate Gallium Acetate Gallium Fluoride Gallium Sputtering Target Gallium Chloride
Gallium Rod Gallium Oxide Pellets Gallium Oxide Nanopowder Gallium Oxide Powder Gallium Pellets
Gadolinium Gallium Garnet-GGG Copper Gallium Sputtering Target Gallium Metal Gallium Foil Gallium Oxide
Show Me MORE Forms of Gallium

PACKAGING SPECIFICATIONS FOR BULK & RESEARCH QUANTITIES
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.


Have a Question? Ask a Chemical Engineer or Material Scientist
Request an MSDS or Certificate of Analysis





German   Korean   French   Japanese   Spanish   Chinese (Simplified)   Portuguese   Russian   Chinese (Taiwan)  Italian   Turkish   Polish   Dutch   Czech   Swedish   Hungarian   Danish   Hebrew

Production Catalog Available in 36 Countries & Languages


Recent Research & Development for Gallium

  • P. Zhang, L.W. Shen, J. Ouyang, Y.M. Zhang, S.Q. Wu, Z.M. Sun, Room temperature mushrooming of gallium wires and its growth mechanism, Journal of Alloys and Compounds, Volume 619, 15 January 2015
  • Wei-Sheng Liu, Shen-Yu Wu, Chao-Yu Hung, Ching-Hsuan Tseng, Yu-Lin Chang, Improving the optoelectronic properties of gallium ZnO transparent conductive thin films through titanium doping, Journal of Alloys and Compounds, Volume 616, 15 December 2014
  • Mohamed Bakr Mohamed, M. Yehia, Cation distribution and magnetic properties of nanocrystalline gallium substituted cobalt ferrite, Journal of Alloys and Compounds, Volume 615, 5 December 2014
  • Erkan Aydin, Mehmet Sankir, Nurdan Demirci Sankir, Conventional and rapid thermal annealing of spray pyrolyzed copper indium gallium sulfide thin films, Journal of Alloys and Compounds, Volume 615, 5 December 2014
  • Ming-Wei Wu, Pang-Hsin Lai, Chia-Hong Hong, Fang-Cheng Chou, The sintering behavior, microstructure, and electrical properties of gallium-doped zinc oxide ceramic targets, Journal of the European Ceramic Society, Volume 34, Issue 15, December 2014
  • Min-Jia Wang, Hui Yang, Qi-Long Zhang, Zhi-Sheng Lin, Zi-Shan Zhang, Dan Yu, Liang Hu, Microstructure and dielectric properties of BaTiO3 ceramic doped with yttrium, magnesium, gallium and silicon for AC capacitor application, Materials Research Bulletin, Volume 60, December 2014
  • Helge Reinsch, Dirk De Vos, Structures and properties of gallium-MOFs with MIL-53-topology based on aliphatic linker molecules, Microporous and Mesoporous Materials, Volume 200, December 2014
  • V.V. Serikov, N.M. Kleinerman, A.V. Vershinin, N.V. Mushnikov, A.V. Protasov, L.A. Stashkova, O.I. Gorbatov, A.V. Ruban, Yu.N. Gornostyrev, Formation of solid solutions of gallium in Fe–Cr and Fe–Co alloys: Mössbauer studies and first-principles calculations, Journal of Alloys and Compounds, Volume 614, 25 November 2014
  • Jae-Hun Jeong, Dong-Won Jung, Eun-Suok Oh, Lithium storage characteristics of a new promising gallium selenide anodic material, Journal of Alloys and Compounds, Volume 613, 15 November 2014
  • Fahmi Fariq Muhammad, Khaulah Sulaiman, Optical and morphological modifications in post-thermally treated tris(8-hydroxyquinoline) gallium films deposited on quartz substrates, Materials Chemistry and Physics, Volume 148, Issues 1–2, 14 November 2014