Skip to Page Content

Gallium Ingot

High Purity Ga Metal Ingots
CAS 7440-55-3


Product Product Code Request Quote
(2N) 99% Gallium Ingot GA-M-02-I Request Quote
(3N) 99.9% Gallium Ingot GA-M-03-I Request Quote
(4N) 99.99% Gallium Ingot GA-M-04-I Request Quote
(5N) 99.999% Gallium Ingot GA-M-05-I Request Quote
(6N) 99.9999% Gallium Ingot GA-M-06-I Request Quote
(7N) 99.99999% Gallium Ingot GA-M-07-I Request Quote

CHEMICAL
IDENTIFIER
Formula CAS No. PubChem CID MDL No. EC No Beilstein
Re. No.
SMILES
Identifier
InChI
Identifier
InChI
Key
Ga 7440-55-3 23981 MFCD00134045 231-163-8 N/A [Ga] InChI=1S/Ga GYHNNYVSQQEPJS-UHFFFAOYSA-N

PROPERTIES Mol. Wt. Appearance Density Tensile Strength Melting Point Boiling Point Thermal Conductivity Electrical Resistivity Electronegativity Specific Heat Heat of Vaporization Heat of Fusion MSDS
69.72 Silvery 5.91 g/cm3 N/A 29.78 °C 2403 °C 0.281 W/cm·K
(302.93 K)
17.4 µΩ·cm
(20°C)
1.81 Pauings 0.089 Cal/g/K
(25°C)
254 kJ/mol 5.59 kJ/mol Safety Data Sheet

Ultra High Purity IngotAmerican Elements produces metallic Gallium Ingots with the highest possible density. Ingots are generally the least costly metallic form and useful in general applications. Our standard Ingot size is nominally 2-3 cm x 3-8 cm x 6-12 cm. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar, or plate form, as well as other machined shapes and through other processes such as nanoparticles () and in the form of solutions and organometallics. We also produce Gallium as chunk, ingot, pellets, specimen, and in compound forms, such as oxide. Other shapes are available by request.

Gallium (Ga) atomic and molecular weight, atomic number and elemental symbolGallium (atomic symbol: Ga, atomic number: 31) is a Block P, Group 13, Period 4 element with an atomic weight of 69.723.The number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electron configuration is [Ar] 3d10 4s2 4p1. The gallium atom has a radius of 122.1 pm and a Van der Waals radius of 187 pm. Gallium Bohr ModelGallium was predicted by Dmitri Mendeleev in 1871. It was first discovered and isolated by Lecoq de Boisbaudran in 1875. In its elemental form, gallium has a silvery appearance. Elemental GalliumGallium is one of three elements that occur naturally as a liquid at room temperature, the other two being mercury and cesium. Gallium does not exist as a free element in nature and is sourced commercially from bauxite and sphalerite. Currently, gallium is used in semiconductor devices for microelectronics and optics. The element name originates from the Latin word 'Gallia', the old name of France, and the word 'Gallus,' meaning rooster. For more information on gallium, including properties, safety data, research, and American Elements' catalog of gallium products, visit our Gallium element page.

HEALTH, SAFETY & TRANSPORTATION INFORMATION
Danger
H314
C
34
26-36/37/39-45
LW8600000
UN 2803 8/PG 3
3
Corrosion-Corrosive to metals        

CUSTOMERS FOR GALLIUM INGOTS HAVE ALSO LOOKED AT
Gallium Acetylacetonate Gallium Acetate Gallium Fluoride Gallium Antimonide Triethylgallium
Copper Indium Gallium Selenide - CIGS Gallium Arsenide Gallium Oxide Nanopowder Gallium Oxide Powder Gallium Nitride Wafer
Gadolinium Gallium Garnet - GGG Copper Gallium Sputtering Target Trimethylgallium Gallium doped Zinc Oxide - GZO Gallium Oxide
Show Me MORE Forms of Gallium

PACKAGING SPECIFICATIONS FOR BULK & RESEARCH QUANTITIES
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.


Have a Question? Ask a Chemical Engineer or Material Scientist
Request an MSDS or Certificate of Analysis

Recent Research & Development for Gallium

  • Gallium Maltolate as an Alternative to Macrolides for Treatment of Presumed Rhodococcus equi Pneumonia in Foals.. Cohen ND, Slovis NM, Giguère S, Baker S, Chaffin MK, Bernstein LR.. J Vet Intern Med. 2015 May
  • Effect of Al2O3 insulator thickness on the structural integrity of amorphous indium-gallium-zinc-oxide based thin film transistors.. Kim HJ, Hwang IJ, Kim YJ.. J Nanosci Nanotechnol. 2014 Dec
  • Design and analysis of vertical-channel gallium nitride (GaN) junctionless nanowire transistors (JNT).. Seo JH, Yoon YJ, Lee HG, Yoo GM, Jo YW, Son DH, Lee JH, Cho ES, Cho S, Kang IM.. J Nanosci Nanotechnol. 2014 Nov
  • Nanoparticles: mechanically sintered gallium-indium nanoparticles (adv. Mater. 14/2015).. Boley JW, White EL, Kramer RK.. Adv Mater. 2015 Apr
  • Radiation stability of visible and near-infrared optical and magneto-optical properties of terbium gallium garnet crystals.. Geist B, Ronningen R, Stolz A, Bollen G, Kochergin V.. Appl Opt. 2015 Apr 1
  • Initial oxidation of gallium arsenide (001)-β2(2 x 4) surface using density functional theory.. Kim DH, Kim DH, Kim YC.. J Nanosci Nanotechnol. 2014 Oct
  • Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing.. Trindade AJ, Guilhabert B, Xie EY, Ferreira R, McKendry JJ, Zhu D, Laurand N, Gu E, Wallis DJ, Watson IM, Humphreys CJ, Dawson MD.. Opt Express. 2015 Apr 6
  • Solution phase synthesis of indium gallium phosphide alloy nanowires.. Kornienko N, Whitmore DD, Yu Y, Leone SR, Yang P.. ACS Nano. 2015 Apr 28
  • Recycling process for recovery of gallium from GaN an e-waste of LED industry through ball milling, annealing and leaching. Swain B, Mishra C, Kang L, Park KS, Lee CG, Hong HS. Environ Res. 2015 Apr: Environ Res
>