Gallium Ingot

High Purity Ga Metal Ingots
CAS 7440-55-3


Product Product Code Order or Specifications
(2N) 99% Gallium Ingot GA-M-02-I Contact American Elements
(3N) 99.9% Gallium Ingot GA-M-03-I Contact American Elements
(4N) 99.99% Gallium Ingot GA-M-04-I Contact American Elements
(5N) 99.999% Gallium Ingot GA-M-05-I Contact American Elements
(6N) 99.9999% Gallium Ingot GA-M-06-I Contact American Elements
(7N) 99.99999% Gallium Ingot GA-M-07-I Contact American Elements

CHEMICAL
IDENTIFIER
Formula CAS No. PubChem CID MDL No. EC No Beilstein
Re. No.
SMILES
Identifier
InChI
Identifier
InChI
Key
Ga 7440-55-3 23981 MFCD00134045 231-163-8 N/A [Ga] InChI=1S/Ga GYHNNYVSQQEPJS-UHFFFAOYSA-N

PROPERTIES Mol. Wt. Appearance Density Tensile Strength Melting Point Boiling Point Thermal Conductivity Electrical Resistivity Electronegativity Specific Heat Heat of Vaporization Heat of Fusion MSDS
69.72 Silvery 5.91 g/cm3 N/A 29.78 °C 2403 °C 0.281 W/cm·K
(302.93 K)
17.4 µΩ·cm
(20°C)
1.81 Pauings 0.089 Cal/g/K
(25°C)
254 kJ/mol 5.59 kJ/mol Safety Data Sheet

Ultra High Purity IngotAmerican Elements produces metallic Gallium Ingots with the highest possible density. Ingots are generally the least costly metallic form and useful in general applications. Our standard Ingot size is nominally 2-3 cm x 3-8 cm x 6-12 cm. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles (See also application discussion at Nanotechnology Information and at Quantum Dots) and in the form of solutions and organometallics. We also produce Gallium as chunk, ingot, pellets, specimen, and in compound forms, such as oxide. Other shapes are available by request.

Gallium (Ga) atomic and molecular weight, atomic number and elemental symbolGallium (atomic symbol: Ga, atomic number: 31) is a Block P, Group 13, Period 4 element with an atomic weight of 69.723.The number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electron configuration is [Ar] 3d10 4s2 4p1. The gallium atom has a radius of 122.1 pm and a Van der Waals radius of 187 pm. Gallium Bohr ModelGallium was predicted by Dmitri Mendeleev in 1871. It was first discovered and isolated by Lecoq de Boisbaudran in 1875. In its elemental form, gallium has a silvery appearance. Elemental GalliumGallium is one of three elements that occur naturally as a liquid at room temperature, the other two being mercury and cesium. Gallium does not exist as a free element in nature and is sourced commercially from bauxite and sphalerite. Currently, gallium is used in semiconductor materials for microelectronics and optics. The element name originates from the Latin word 'Gallia', the old name of France, and the word 'Gallus,' meaning rooster. For more information on gallium, including properties, safety data, research, and American Elements' catalog of gallium products, visit our Periodic Table of the Elements: Gallium Information Page.

HEALTH, SAFETY & TRANSPORTATION INFORMATION
Danger
H314
C
34
26-36/37/39-45
LW8600000
UN 2803 8/PG 3
3
Corrosion-Corrosive to metals        

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PACKAGING SPECIFICATIONS FOR BULK & RESEARCH QUANTITIES
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.


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Request an MSDS or Certificate of Analysis





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Recent Research & Development for Gallium

  • Wei-Sheng Liu, Shen-Yu Wu, Chao-Yu Hung, Ching-Hsuan Tseng, Yu-Lin Chang, Improving the optoelectronic properties of gallium ZnO transparent conductive thin films through titanium doping, Journal of Alloys and Compounds, Volume 616, 15 December 2014
  • Mohamed Bakr Mohamed, M. Yehia, Cation distribution and magnetic properties of nanocrystalline gallium substituted cobalt ferrite, Journal of Alloys and Compounds, Volume 615, 5 December 2014
  • Erkan Aydin, Mehmet Sankir, Nurdan Demirci Sankir, Conventional and rapid thermal annealing of spray pyrolyzed copper indium gallium sulfide thin films, Journal of Alloys and Compounds, Volume 615, 5 December 2014
  • Ming-Wei Wu, Pang-Hsin Lai, Chia-Hong Hong, Fang-Cheng Chou, The sintering behavior, microstructure, and electrical properties of gallium-doped zinc oxide ceramic targets, Journal of the European Ceramic Society, Volume 34, Issue 15, December 2014
  • V.V. Serikov, N.M. Kleinerman, A.V. Vershinin, N.V. Mushnikov, A.V. Protasov, L.A. Stashkova, O.I. Gorbatov, A.V. Ruban, Yu.N. Gornostyrev, Formation of solid solutions of gallium in Fe–Cr and Fe–Co alloys: Mössbauer studies and first-principles calculations, Journal of Alloys and Compounds, Volume 614, 25 November 2014
  • Jae-Hun Jeong, Dong-Won Jung, Eun-Suok Oh, Lithium storage characteristics of a new promising gallium selenide anodic material, Journal of Alloys and Compounds, Volume 613, 15 November 2014
  • Rui Sun, Hua-Yu Zhang, Gui-Gen Wang, Jie-Cai Han, Can Zhu, Xiao-Peng Liu, Lin Cui, Selective growth and characterization of gallium nitride nanowires through an N-Ga2O3 layer, Ceramics International, Volume 40, Issue 9, Part A, November 2014
  • Jia Liu, Weijia Zhang, Dengyuan Song, Qiang Ma, Lei Zhang, Hui Zhang, Xiaobo Ma, Haiyang Song, Gallium-doped zinc oxide targets fabricated by sintering: Impact of target quality on sputtered thin film properties, Materials Science in Semiconductor Processing, Volume 27, November 2014
  • Adel M.F. Alhalawani, Lana Placek, Anthony W. Wren, Declan J. Curran, Daniel Boyd, Mark R. Towler, Influence of gallium on the surface properties of zinc based glass polyalkenoate cements, Materials Chemistry and Physics, Volume 147, Issue 3, 15 October 2014
  • O. Toma, S. Georgescu, Excited-state absorption in erbium-doped calcium lithium niobium gallium garnet, Journal of Luminescence, Volume 154, October 2014
  • Jiming Bian, Lihua Miao, Fuwen Qin, Dong Zhang, Weifeng Liu, Hongzhu Liu, Low-temperature ECR-PEMOCVD deposition of high-quality crystalline gallium nitride films: A comparative study of intermediate layers for growth on amorphous glass substrates, Materials Science in Semiconductor Processing, Volume 26, October 2014
  • Liangliang Huang, Yong Fan, Hongwei Ma, Caixia Li, Li Wang, Synthesis and characterizations of two NbO topological gallium phosphites with low framework density, Microporous and Mesoporous Materials, Volume 196, 15 September 2014
  • Jianwei Wang, Alberto Santamato, Pisu Jiang, Damien Bonneau, Erman Engin, Joshua W. Silverstone, Matthias Lermer, Johannes Beetz, Martin Kamp, Sven Höfling, Michael G. Tanner, Chandra M. Natarajan, Robert H. Hadfield, Sander N. Dorenbos, Val Zwiller, Jeremy L. O’Brien, Mark G. Thompson, Gallium arsenide (GaAs) quantum photonic waveguide circuits, Optics Communications, Volume 327, 15 September 2014
  • Wyatt H. Strong, David V. Forbes, Seth M. Hubbard, Investigation of deep level defects in electron irradiated indium arsenide quantum dots embedded in a gallium arsenide matrix, Materials Science in Semiconductor Processing, Volume 25, September 2014
  • Somayeh Behzad, Raad Chegel, Rostam Moradian, Masoud Shahrokhi, Theoretical exploration of structural, electro-optical and magnetic properties of gallium-doped silicon carbide nanotubes, Superlattices and Microstructures, Volume 73, September 2014
  • Elissa H. Williams, Albert V. Davydov, Vladimir P. Oleshko, Kristen L. Steffens, Igor Levin, Nancy J. Lin, Kris A. Bertness, Amy K. Manocchi, John A. Schreifels, Mulpuri V. Rao, Solution-based functionalization of gallium nitride nanowires for protein sensor development, Surface Science, Volume 627, September 2014
  • H.V. Thanh Luong, J.C. Liu, Flotation separation of gallium from aqueous solution – Effects of chemical speciation and solubility, Separation and Purification Technology, Volume 132, 20 August 2014
  • Yin-Rou Huang, Tzu-Wei Huang, Tzu-Hui Wang, Yu-Chen Tsai, Improved performance of dye-sensitized solar cells using gallium nitride–titanium dioxide composite photoelectrodes, Journal of Colloid and Interface Science, Volume 428, 15 August 2014
  • Andrew Ritchie, Shaylin Eger, Chelsey Wright, Daniel Chelladurai, Cuyler Borrowman, Weine Olovsson, Martin Magnuson, Jai Verma, Debdeep Jena, Huili Grace Xing, Christian Dubuc, Stephen Urquhart, Strain Sensitivity in the Nitrogen 1s NEXAFS Spectra of Gallium Nitride, Applied Surface Science, Available online 13 August 2014
  • Helge Reinsch, Dirk De Vos, Structures and properties of Gallium-MOFs with MIL-53-topology based on aliphatic linker molecules, Microporous and Mesoporous Materials, Available online 8 August 2014