Gallium Oxide

Ga2O3
CAS 12024-21-4


Product Product Code Order or Specifications
(3N) 99.9% Gallium Oxide GA-OX-03 Contact American Elements
(4N) 99.99% Gallium Oxide GA-OX-04 Contact American Elements
(5N) 99.999% Gallium Oxide GA-OX-05 Contact American Elements
(6N) 99.9999% Gallium Oxide GA-OX-06 Contact American Elements

CHEMICAL
IDENTIFIER
Formula CAS No. PubChem SID PubChem CID MDL No. EC No IUPAC Name Beilstein
Re. No.
SMILES
Identifier
InChI
Identifier
InChI
Key
Ga2O3 12024-21-4 24852864 5139834 MFCD00011020 234-691-7 Digallium oxygen(2-) N/A O=[Ga]O[Ga]=O InChI=1S/2Ga.3O QZQVBEXLDFYHSR-UHFFFAOYSA-N

PROPERTIES Compound Formula Mol. Wt. Appearance Melting Point Boiling Point Density

Exact Mass

Monoisotopic Mass Charge MSDS
Ga2O3 187.44 White Powder 1,900° C
(3,452° F)
N/A 5.88 g/cm3 187.835 g/mol 185.835906 Da 0 Safety Data Sheet

Oxide IonGallium Oxide is a highly insoluble thermally stable Gallium source suitable for glass, optic and ceramic applications. The precipitation of the hydrated form of gallium oxide is caused by the neutralization of acidic or basic gallium salt solution. Oxide compounds are not conductive to electricity. However, certain perovskite structured oxides are electronically conductive findingHigh Purity (99.999%) Gallium Oxide (Ga2O3) Powder application in the cathode of solid oxide fuel cells and oxygen generation systems. They are compounds containing at least one oxygen anion and one metallic cation. They are typically insoluble in aqueous solutions (water) and extremely stable making them useful in ceramic structures as simple as producing clay bowls to advanced electronics and in light weight structural components in aerospace and electrochemical applications such as fuel cells in which they exhibit ionic conductivity. Metal oxide compounds are basicanhydrides and can therefore react with acids and with strong reducing agents in redox reactions. Gallium Oxide is also available in pellets, pieces, powder sputtering targets, tablets, and nanopowder (from American Elements' nanoscale production facilities). See Nanotechnology for more nanotechnology applications information. Gallium Oxide is generally immediately available in most volumes. High purity, submicron and nanopowder forms may be considered. Additional technical, research and safety (MSDS) information is available.

Gallium (Ga) atomic and molecular weight, atomic number and elemental symbolGallium (atomic symbol: Ga, atomic number: 31) is a Block P, Group 13, Period 4 element with an atomic weight of 69.723. Gallium Bohr ModelThe number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electron configuration is [Ar] 3d10 4s2 4p1. The gallium atom has a radius of 122.1 pm and a Van der Waals radius of 187 pm. Gallium was predicted by Dmitri Mendeleev in 1871. It was first discovered and isolated by Hans Christian Oersted in 1825. Elemental Gallium In its elemental form, gallium has a silvery appearance. Gallium is one of three elements that occur naturally as a liquid at room temperature, the other two being mercury and cesium. Gallium does not exist as a free element in nature and is sourced commercially from bauxite and sphalerite. Currently, gallium is used in semiconductor materials for microelectronics and optics. The element name originates from the Latin word 'Gallia', the old name of France, and the word 'Gallus,' meaning rooster. For more information on gallium, including properties, safety data, research, and American Elements' catalog of gallium products, visit the Gallium Information Center.

HEALTH, SAFETY & TRANSPORTATION INFORMATION
Material Safety Data Sheet MSDS
Signal Word N/A
Hazard Statements N/A
Hazard Codes N/A
Risk Codes N/A
Safety Precautions N/A
RTECS Number N/A
Transport Information N/A
WGK Germany 2
Globally Harmonized System of
Classification and Labelling (GHS)
N/A        

GALLIUM OXIDE SYNONYMS
Digallium oxygen(2-), Digallium trioxide, Gallium sesquioxide, Gallia, Oxo-oxogallanyloxy-gallane, Gallium(III) oxide, Gallium trioxide

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PACKAGING SPECIFICATIONS FOR BULK & RESEARCH QUANTITIES
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.


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Recent Research & Development for Gallium

  • V.V. Serikov, N.M. Kleinerman, A.V. Vershinin, N.V. Mushnikov, A.V. Protasov, L.A. Stashkova, O.I. Gorbatov, A.V. Ruban, Yu.N. Gornostyrev, Formation of solid solutions of gallium in Fe–Cr and Fe–Co alloys: Mössbauer studies and first-principles calculations, Journal of Alloys and Compounds, Volume 614, 25 November 2014
  • Jae-Hun Jeong, Dong-Won Jung, Eun-Suok Oh, Lithium storage characteristics of a new promising gallium selenide anodic material, Journal of Alloys and Compounds, Volume 613, 15 November 2014
  • Jia Liu, Weijia Zhang, Dengyuan Song, Qiang Ma, Lei Zhang, Hui Zhang, Xiaobo Ma, Haiyang Song, Gallium-doped zinc oxide targets fabricated by sintering: Impact of target quality on sputtered thin film properties, Materials Science in Semiconductor Processing, Volume 27, November 2014
  • O. Toma, S. Georgescu, Excited-state absorption in erbium-doped calcium lithium niobium gallium garnet, Journal of Luminescence, Volume 154, October 2014
  • Jiming Bian, Lihua Miao, Fuwen Qin, Dong Zhang, Weifeng Liu, Hongzhu Liu, Low-temperature ECR-PEMOCVD deposition of high-quality crystalline gallium nitride films: A comparative study of intermediate layers for growth on amorphous glass substrates, Materials Science in Semiconductor Processing, Volume 26, October 2014
  • Liangliang Huang, Yong Fan, Hongwei Ma, Caixia Li, Li Wang, Synthesis and characterizations of two NbO topological gallium phosphites with low framework density, Microporous and Mesoporous Materials, Volume 196, 15 September 2014
  • Jianwei Wang, Alberto Santamato, Pisu Jiang, Damien Bonneau, Erman Engin, Joshua W. Silverstone, Matthias Lermer, Johannes Beetz, Martin Kamp, Sven Höfling, Michael G. Tanner, Chandra M. Natarajan, Robert H. Hadfield, Sander N. Dorenbos, Val Zwiller, Jeremy L. O’Brien, Mark G. Thompson, Gallium arsenide (GaAs) quantum photonic waveguide circuits, Optics Communications, Volume 327, 15 September 2014
  • Wyatt H. Strong, David V. Forbes, Seth M. Hubbard, Investigation of deep level defects in electron irradiated indium arsenide quantum dots embedded in a gallium arsenide matrix, Materials Science in Semiconductor Processing, Volume 25, September 2014
  • Somayeh Behzad, Raad Chegel, Rostam Moradian, Masoud Shahrokhi, Theoretical exploration of structural, electro-optical and magnetic properties of gallium-doped silicon carbide nanotubes, Superlattices and Microstructures, Volume 73, September 2014
  • Elissa H. Williams, Albert V. Davydov, Vladimir P. Oleshko, Kristen L. Steffens, Igor Levin, Nancy J. Lin, Kris A. Bertness, Amy K. Manocchi, John A. Schreifels, Mulpuri V. Rao, Solution-based functionalization of gallium nitride nanowires for protein sensor development, Surface Science, Volume 627, September 2014
  • H.V. Thanh Luong, J.C. Liu, Flotation separation of gallium from aqueous solution – Effects of chemical speciation and solubility, Separation and Purification Technology, Volume 132, 20 August 2014
  • Yin-Rou Huang, Tzu-Wei Huang, Tzu-Hui Wang, Yu-Chen Tsai, Improved performance of dye-sensitized solar cells using gallium nitride–titanium dioxide composite photoelectrodes, Journal of Colloid and Interface Science, Volume 428, 15 August 2014
  • Esma Senel, John C. Walmsley, Spyros Diplas, Kemal Nisancioglu, Liquid metal embrittlement of aluminium by segregation of trace element gallium, Corrosion Science, Volume 85, August 2014
  • Esma Senel, Kemal Nisancioglu, Role of dealloying on the electrochemical behaviour of aluminium alloyed with trace amounts of gallium, Corrosion Science, Volume 85, August 2014
  • N. Sengouga, Af. Meftah, Am. Meftah, M. Henini, Numerical simulation of the response of substrate traps to a voltage applied to the gate of a gallium arsenide field effect transistor, Materials Science in Semiconductor Processing, Volume 24, August 2014
  • K. Aravinth, G. Anandha Babu, P. Ramasamy, Silver gallium telluride (AgGaTe2) single crystal: Synthesis, accelerated crucible rotation-Bridgman growth and characterization, Materials Science in Semiconductor Processing, Volume 24, August 2014
  • Zhenghua Xiao, Jianzhang Li, Junbo Zhong, Wei Hu, Jun Zeng, Shengtian Huang, Xiaolin Lu, Jinjin He, Minjiao Li, Enhanced photocatalytic decolorization of methyl orange by gallium-doped a-Fe2O3, Materials Science in Semiconductor Processing, Volume 24, August 2014
  • Rongsheng Chen, Wei Zhou, Meng Zhang, Hoi-Sing Kwok, Self-aligned indium–gallium–zinc oxide thin-film transistors with SiNx/SiO2/SiNx/SiO2 passivation layers, Thin Solid Films, Volume 564, 1 August 2014
  • Erkan Aydin, Mehmet Sankir, Nurdan Demirci Sankir, Conventional and Rapid Thermal Annealing of Spray Pyrolyzed Copper Indium Gallium Sulfide Thin Films, Journal of Alloys and Compounds, Available online 7 July 2014
  • Muthumuni Managa, Edith Antunes, Tebello Nyokong, Conjugates of platinum nanoparticles with gallium tetra – (4-Carboxyphenyl) porphyrin and their use in photodynamic antimicrobial chemotherapy when in solution or embedded in electrospun fiber, Polyhedron, Volume 76, 7 July 2014