Gallium Oxide

Ga2O3
CAS 12024-21-4


Product Product Code Order or Specifications
(3N) 99.9% Gallium Oxide GA-OX-03 Contact American Elements
(4N) 99.99% Gallium Oxide GA-OX-04 Contact American Elements
(5N) 99.999% Gallium Oxide GA-OX-05 Contact American Elements
(6N) 99.9999% Gallium Oxide GA-OX-06 Contact American Elements

CHEMICAL
IDENTIFIER
Formula CAS No. PubChem SID PubChem CID MDL No. EC No IUPAC Name Beilstein
Re. No.
SMILES
Identifier
InChI
Identifier
InChI
Key
Ga2O3 12024-21-4 24852864 5139834 MFCD00011020 234-691-7 Digallium oxygen(2-) N/A O=[Ga]O[Ga]=O InChI=1S/2Ga.3O QZQVBEXLDFYHSR-UHFFFAOYSA-N

PROPERTIES Compound Formula Mol. Wt. Appearance Melting Point Boiling Point Density

Exact Mass

Monoisotopic Mass Charge MSDS
Ga2O3 187.44 White Powder 1,900° C
(3,452° F)
N/A 5.88 g/cm3 187.835 g/mol 185.835906 Da 0 Safety Data Sheet

Oxide IonGallium Oxide is a highly insoluble thermally stable Gallium source suitable for glass, optic and ceramic applications. The precipitation of the hydrated form of gallium oxide is caused by the neutralization of acidic or basic gallium salt solution. Oxide compounds are not conductive to electricity. However, certain perovskite structured oxides are electronically conductive findingHigh Purity (99.999%) Gallium Oxide (Ga2O3) Powder application in the cathode of solid oxide fuel cells and oxygen generation systems. They are compounds containing at least one oxygen anion and one metallic cation. They are typically insoluble in aqueous solutions (water) and extremely stable making them useful in ceramic structures as simple as producing clay bowls to advanced electronics and in light weight structural components in aerospace and electrochemical applications such as fuel cells in which they exhibit ionic conductivity. Metal oxide compounds are basicanhydrides and can therefore react with acids and with strong reducing agents in redox reactions. Gallium Oxide is also available in pellets, pieces, powder sputtering targets, tablets, and nanopowder (from American Elements' nanoscale production facilities). See Nanotechnology for more nanotechnology applications information. Gallium Oxide is generally immediately available in most volumes. High purity, submicron and nanopowder forms may be considered. Additional technical, research and safety (MSDS) information is available.

Gallium (Ga) atomic and molecular weight, atomic number and elemental symbolGallium (atomic symbol: Ga, atomic number: 31) is a Block P, Group 13, Period 4 element with an atomic weight of 69.723.The number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electron configuration is [Ar] 3d10 4s2 4p1. The gallium atom has a radius of 122.1 pm and a Van der Waals radius of 187 pm. Gallium Bohr ModelGallium was predicted by Dmitri Mendeleev in 1871. It was first discovered and isolated by Lecoq de Boisbaudran in 1875. In its elemental form, gallium has a silvery appearance. Elemental GalliumGallium is one of three elements that occur naturally as a liquid at room temperature, the other two being mercury and cesium. Gallium does not exist as a free element in nature and is sourced commercially from bauxite and sphalerite. Currently, gallium is used in semiconductor materials for microelectronics and optics. The element name originates from the Latin word 'Gallia', the old name of France, and the word 'Gallus,' meaning rooster. For more information on gallium, including properties, safety data, research, and American Elements' catalog of gallium products, visit our Periodic Table of the Elements: Gallium Information Page.

HEALTH, SAFETY & TRANSPORTATION INFORMATION
Material Safety Data Sheet MSDS
Signal Word N/A
Hazard Statements N/A
Hazard Codes N/A
Risk Codes N/A
Safety Precautions N/A
RTECS Number N/A
Transport Information N/A
WGK Germany 2
Globally Harmonized System of
Classification and Labelling (GHS)
N/A        

GALLIUM OXIDE SYNONYMS
Digallium oxygen(2-), Digallium trioxide, Gallium sesquioxide, Gallia, Oxo-oxogallanyloxy-gallane, Gallium(III) oxide, Gallium trioxide

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PACKAGING SPECIFICATIONS FOR BULK & RESEARCH QUANTITIES
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.


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Recent Research & Development for Gallium

  • P. Zhang, L.W. Shen, J. Ouyang, Y.M. Zhang, S.Q. Wu, Z.M. Sun, Room temperature mushrooming of gallium wires and its growth mechanism, Journal of Alloys and Compounds, Volume 619, 15 January 2015
  • Wei-Sheng Liu, Shen-Yu Wu, Chao-Yu Hung, Ching-Hsuan Tseng, Yu-Lin Chang, Improving the optoelectronic properties of gallium ZnO transparent conductive thin films through titanium doping, Journal of Alloys and Compounds, Volume 616, 15 December 2014
  • Mohamed Bakr Mohamed, M. Yehia, Cation distribution and magnetic properties of nanocrystalline gallium substituted cobalt ferrite, Journal of Alloys and Compounds, Volume 615, 5 December 2014
  • Erkan Aydin, Mehmet Sankir, Nurdan Demirci Sankir, Conventional and rapid thermal annealing of spray pyrolyzed copper indium gallium sulfide thin films, Journal of Alloys and Compounds, Volume 615, 5 December 2014
  • Ming-Wei Wu, Pang-Hsin Lai, Chia-Hong Hong, Fang-Cheng Chou, The sintering behavior, microstructure, and electrical properties of gallium-doped zinc oxide ceramic targets, Journal of the European Ceramic Society, Volume 34, Issue 15, December 2014
  • Min-Jia Wang, Hui Yang, Qi-Long Zhang, Zhi-Sheng Lin, Zi-Shan Zhang, Dan Yu, Liang Hu, Microstructure and dielectric properties of BaTiO3 ceramic doped with yttrium, magnesium, gallium and silicon for AC capacitor application, Materials Research Bulletin, Volume 60, December 2014
  • Helge Reinsch, Dirk De Vos, Structures and properties of gallium-MOFs with MIL-53-topology based on aliphatic linker molecules, Microporous and Mesoporous Materials, Volume 200, December 2014
  • V.V. Serikov, N.M. Kleinerman, A.V. Vershinin, N.V. Mushnikov, A.V. Protasov, L.A. Stashkova, O.I. Gorbatov, A.V. Ruban, Yu.N. Gornostyrev, Formation of solid solutions of gallium in Fe–Cr and Fe–Co alloys: Mössbauer studies and first-principles calculations, Journal of Alloys and Compounds, Volume 614, 25 November 2014
  • Jae-Hun Jeong, Dong-Won Jung, Eun-Suok Oh, Lithium storage characteristics of a new promising gallium selenide anodic material, Journal of Alloys and Compounds, Volume 613, 15 November 2014
  • Fahmi Fariq Muhammad, Khaulah Sulaiman, Optical and morphological modifications in post-thermally treated tris(8-hydroxyquinoline) gallium films deposited on quartz substrates, Materials Chemistry and Physics, Volume 148, Issues 1–2, 14 November 2014