Gallium Oxide

Ga2O3
CAS 12024-21-4


Product Product Code Order or Specifications
(3N) 99.9% Gallium Oxide GA-OX-03 Contact American Elements
(4N) 99.99% Gallium Oxide GA-OX-04 Contact American Elements
(5N) 99.999% Gallium Oxide GA-OX-05 Contact American Elements
(6N) 99.9999% Gallium Oxide GA-OX-06 Contact American Elements

CHEMICAL
IDENTIFIER
Formula CAS No. PubChem SID PubChem CID MDL No. EC No IUPAC Name Beilstein
Re. No.
SMILES
Identifier
InChI
Identifier
InChI
Key
Ga2O3 12024-21-4 24852864 5139834 MFCD00011020 234-691-7 Digallium oxygen(2-) N/A O=[Ga]O[Ga]=O InChI=1S/2Ga.3O QZQVBEXLDFYHSR-UHFFFAOYSA-N

PROPERTIES Compound Formula Mol. Wt. Appearance Melting Point Boiling Point Density

Exact Mass

Monoisotopic Mass Charge MSDS
Ga2O3 187.44 White Powder 1,900° C
(3,452° F)
N/A 5.88 g/cm3 187.835 g/mol 185.835906 Da 0 Safety Data Sheet

Oxide IonGallium Oxide is a highly insoluble thermally stable Gallium source suitable for glass, optic and ceramic applications. The precipitation of the hydrated form of gallium oxide is caused by the neutralization of acidic or basic gallium salt solution. Oxide compounds are not conductive to electricity. However, certain perovskite structured oxides are electronically conductive findingHigh Purity (99.999%) Gallium Oxide (Ga2O3) Powder application in the cathode of solid oxide fuel cells and oxygen generation systems. They are compounds containing at least one oxygen anion and one metallic cation. They are typically insoluble in aqueous solutions (water) and extremely stable making them useful in ceramic structures as simple as producing clay bowls to advanced electronics and in light weight structural components in aerospace and electrochemical applications such as fuel cells in which they exhibit ionic conductivity. Metal oxide compounds are basicanhydrides and can therefore react with acids and with strong reducing agents in redox reactions. Gallium Oxide is also available in pellets, pieces, powder sputtering targets, tablets, and nanopowder (from American Elements' nanoscale production facilities). See Nanotechnology for more nanotechnology applications information. Gallium Oxide is generally immediately available in most volumes. High purity, submicron and nanopowder forms may be considered. Additional technical, research and safety (MSDS) information is available.

Gallium (Ga) atomic and molecular weight, atomic number and elemental symbolGallium (atomic symbol: Ga, atomic number: 31) is a Block P, Group 13, Period 4 element with an atomic weight of 69.723.The number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electron configuration is [Ar] 3d10 4s2 4p1. The gallium atom has a radius of 122.1 pm and a Van der Waals radius of 187 pm. Gallium Bohr ModelGallium was predicted by Dmitri Mendeleev in 1871. It was first discovered and isolated by Lecoq de Boisbaudran in 1875. In its elemental form, gallium has a silvery appearance. Elemental GalliumGallium is one of three elements that occur naturally as a liquid at room temperature, the other two being mercury and cesium. Gallium does not exist as a free element in nature and is sourced commercially from bauxite and sphalerite. Currently, gallium is used in semiconductor materials for microelectronics and optics. The element name originates from the Latin word 'Gallia', the old name of France, and the word 'Gallus,' meaning rooster. For more information on gallium, including properties, safety data, research, and American Elements' catalog of gallium products, visit our Periodic Table of the Elements: Gallium Information Page.

HEALTH, SAFETY & TRANSPORTATION INFORMATION
Material Safety Data Sheet MSDS
Signal Word N/A
Hazard Statements N/A
Hazard Codes N/A
Risk Codes N/A
Safety Precautions N/A
RTECS Number N/A
Transport Information N/A
WGK Germany 2
Globally Harmonized System of
Classification and Labelling (GHS)
N/A        

GALLIUM OXIDE SYNONYMS
Digallium oxygen(2-), Digallium trioxide, Gallium sesquioxide, Gallia, Oxo-oxogallanyloxy-gallane, Gallium(III) oxide, Gallium trioxide

CUSTOMERS FOR GALLIUM OXIDE HAVE ALSO LOOKED AT
Gallium Acetylacetonate Gallium Acetate Gallium Fluoride Gallium Sputtering Target Gallium Chloride
Gallium Rod Gallium Oxide Pellets Gallium Oxide Nanopowder Gallium Oxide Powder Gallium Pellets
Gadolinium Gallium Garnet-GGG Copper Gallium Sputtering Target Gallium Metal Gallium Foil Gallium Oxide
Show Me MORE Forms of Gallium

PACKAGING SPECIFICATIONS FOR BULK & RESEARCH QUANTITIES
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.


Have a Question? Ask a Chemical Engineer or Material Scientist
Request an MSDS or Certificate of Analysis





German   Korean   French   Japanese   Spanish   Chinese (Simplified)   Portuguese   Russian   Chinese (Taiwan)  Italian   Turkish   Polish   Dutch   Czech   Swedish   Hungarian   Danish   Hebrew

Production Catalog Available in 36 Countries & Languages


Recent Research & Development for Gallium

  • Wei-Sheng Liu, Shen-Yu Wu, Chao-Yu Hung, Ching-Hsuan Tseng, Yu-Lin Chang, Improving the optoelectronic properties of gallium ZnO transparent conductive thin films through titanium doping, Journal of Alloys and Compounds, Volume 616, 15 December 2014
  • Mohamed Bakr Mohamed, M. Yehia, Cation distribution and magnetic properties of nanocrystalline gallium substituted cobalt ferrite, Journal of Alloys and Compounds, Volume 615, 5 December 2014
  • Erkan Aydin, Mehmet Sankir, Nurdan Demirci Sankir, Conventional and rapid thermal annealing of spray pyrolyzed copper indium gallium sulfide thin films, Journal of Alloys and Compounds, Volume 615, 5 December 2014
  • Ming-Wei Wu, Pang-Hsin Lai, Chia-Hong Hong, Fang-Cheng Chou, The sintering behavior, microstructure, and electrical properties of gallium-doped zinc oxide ceramic targets, Journal of the European Ceramic Society, Volume 34, Issue 15, December 2014
  • V.V. Serikov, N.M. Kleinerman, A.V. Vershinin, N.V. Mushnikov, A.V. Protasov, L.A. Stashkova, O.I. Gorbatov, A.V. Ruban, Yu.N. Gornostyrev, Formation of solid solutions of gallium in Fe–Cr and Fe–Co alloys: Mössbauer studies and first-principles calculations, Journal of Alloys and Compounds, Volume 614, 25 November 2014
  • Jae-Hun Jeong, Dong-Won Jung, Eun-Suok Oh, Lithium storage characteristics of a new promising gallium selenide anodic material, Journal of Alloys and Compounds, Volume 613, 15 November 2014
  • Rui Sun, Hua-Yu Zhang, Gui-Gen Wang, Jie-Cai Han, Can Zhu, Xiao-Peng Liu, Lin Cui, Selective growth and characterization of gallium nitride nanowires through an N-Ga2O3 layer, Ceramics International, Volume 40, Issue 9, Part A, November 2014
  • Jia Liu, Weijia Zhang, Dengyuan Song, Qiang Ma, Lei Zhang, Hui Zhang, Xiaobo Ma, Haiyang Song, Gallium-doped zinc oxide targets fabricated by sintering: Impact of target quality on sputtered thin film properties, Materials Science in Semiconductor Processing, Volume 27, November 2014
  • Adel M.F. Alhalawani, Lana Placek, Anthony W. Wren, Declan J. Curran, Daniel Boyd, Mark R. Towler, Influence of gallium on the surface properties of zinc based glass polyalkenoate cements, Materials Chemistry and Physics, Volume 147, Issue 3, 15 October 2014
  • O. Toma, S. Georgescu, Excited-state absorption in erbium-doped calcium lithium niobium gallium garnet, Journal of Luminescence, Volume 154, October 2014
  • Jiming Bian, Lihua Miao, Fuwen Qin, Dong Zhang, Weifeng Liu, Hongzhu Liu, Low-temperature ECR-PEMOCVD deposition of high-quality crystalline gallium nitride films: A comparative study of intermediate layers for growth on amorphous glass substrates, Materials Science in Semiconductor Processing, Volume 26, October 2014
  • Liangliang Huang, Yong Fan, Hongwei Ma, Caixia Li, Li Wang, Synthesis and characterizations of two NbO topological gallium phosphites with low framework density, Microporous and Mesoporous Materials, Volume 196, 15 September 2014
  • Jianwei Wang, Alberto Santamato, Pisu Jiang, Damien Bonneau, Erman Engin, Joshua W. Silverstone, Matthias Lermer, Johannes Beetz, Martin Kamp, Sven Höfling, Michael G. Tanner, Chandra M. Natarajan, Robert H. Hadfield, Sander N. Dorenbos, Val Zwiller, Jeremy L. O’Brien, Mark G. Thompson, Gallium arsenide (GaAs) quantum photonic waveguide circuits, Optics Communications, Volume 327, 15 September 2014
  • Wyatt H. Strong, David V. Forbes, Seth M. Hubbard, Investigation of deep level defects in electron irradiated indium arsenide quantum dots embedded in a gallium arsenide matrix, Materials Science in Semiconductor Processing, Volume 25, September 2014
  • Somayeh Behzad, Raad Chegel, Rostam Moradian, Masoud Shahrokhi, Theoretical exploration of structural, electro-optical and magnetic properties of gallium-doped silicon carbide nanotubes, Superlattices and Microstructures, Volume 73, September 2014
  • Elissa H. Williams, Albert V. Davydov, Vladimir P. Oleshko, Kristen L. Steffens, Igor Levin, Nancy J. Lin, Kris A. Bertness, Amy K. Manocchi, John A. Schreifels, Mulpuri V. Rao, Solution-based functionalization of gallium nitride nanowires for protein sensor development, Surface Science, Volume 627, September 2014
  • H.V. Thanh Luong, J.C. Liu, Flotation separation of gallium from aqueous solution – Effects of chemical speciation and solubility, Separation and Purification Technology, Volume 132, 20 August 2014
  • Yin-Rou Huang, Tzu-Wei Huang, Tzu-Hui Wang, Yu-Chen Tsai, Improved performance of dye-sensitized solar cells using gallium nitride–titanium dioxide composite photoelectrodes, Journal of Colloid and Interface Science, Volume 428, 15 August 2014
  • Andrew Ritchie, Shaylin Eger, Chelsey Wright, Daniel Chelladurai, Cuyler Borrowman, Weine Olovsson, Martin Magnuson, Jai Verma, Debdeep Jena, Huili Grace Xing, Christian Dubuc, Stephen Urquhart, Strain Sensitivity in the Nitrogen 1s NEXAFS Spectra of Gallium Nitride, Applied Surface Science, Available online 13 August 2014
  • Helge Reinsch, Dirk De Vos, Structures and properties of Gallium-MOFs with MIL-53-topology based on aliphatic linker molecules, Microporous and Mesoporous Materials, Available online 8 August 2014