Gallium(III) Telluride

Ga2Te3
CAS 12024-27-0


Product Product Code Order or Specifications
(5N) 99.999% Gallium Telluride Powder GA3-TE-05-P Contact American Elements
(5N) 99.999% Gallium Telluride Ingot GA3-TE-05-I Contact American Elements
(5N) 99.999% Gallium Telluride Chunk GA3-TE-05-CK Contact American Elements
(5N) 99.999% Gallium Telluride Sputtering Target GA3-TE-05-ST Contact American Elements
(5N) 99.999% Gallium Telluride Lump GA3-TE-05-L Contact American Elements
(5N) 99.999% Gallium Telluride Wafer GA3-TE-05-WSX Contact American Elements

CHEMICAL
IDENTIFIER
Formula CAS No. PubChem SID PubChem CID MDL No. EC No IUPAC Name Beilstein
Re. No.
SMILES
Identifier
InChI
Identifier
InChI
Key
Ga2Te3 12024-27-0 N/A N/A N/A 234-690-1 N/A N/A [Ga+2].[TeH2-2] InChI=1S/Ga.Te.H/q+2;-2; GSXIPKZTZZWWRS-UHFFFAOYSA-N

PROPERTIES Compound Formula Mol. Wt. Appearance Melting Point Boiling Point Density

Exact Mass

Monoisotopic Mass Charge MSDS
Ga2Te3 522.3 cubic crystals 790° C (1,454° F) N/A 5.57 g/cm3 N/A N/A N/A Safety Data Sheet

Telluride IonGallium(III) Telluride is a semiconducting compound of the III-VI type that crystallizes in a lattice structure. American Elements produces to many standard grades when applicable, including Mil Spec (military grade); ACS, Reagent and Technical Grade; Food, Agricultural and Pharmaceutical Grade; Optical Grade, USP and EP/BP (European Pharmacopoeia/British Pharmacopoeia) and follows applicable ASTM testing standards. Typical and custom packaging is available. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.

Gallium (Ga) atomic and molecular weight, atomic number and elemental symbolGallium (atomic symbol: Ga, atomic number: 31) is a Block P, Group 13, Period 4 element with an atomic weight of 69.723.The number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electron configuration is [Ar] 3d10 4s2 4p1. The gallium atom has a radius of 122.1 pm and a Van der Waals radius of 187 pm. Gallium Bohr ModelGallium was predicted by Dmitri Mendeleev in 1871. It was first discovered and isolated by Lecoq de Boisbaudran in 1875. In its elemental form, gallium has a silvery appearance. Elemental GalliumGallium is one of three elements that occur naturally as a liquid at room temperature, the other two being mercury and cesium. Gallium does not exist as a free element in nature and is sourced commercially from bauxite and sphalerite. Currently, gallium is used in semiconductor materials for microelectronics and optics. The element name originates from the Latin word 'Gallia', the old name of France, and the word 'Gallus,' meaning rooster. For more information on gallium, including properties, safety data, research, and American Elements' catalog of gallium products, visit our Periodic Table of the Elements: Gallium Information Page.

Tellurium Bohr ModelTellurium (Te) atomic and molecular weight, atomic number and elemental symbolTellurium (atomic symbol: Te, atomic number: 52) is a Block P, Group 16, Period 5 element with an atomic radius of 127.60. The number of electrons in each of tellurium's shells is 2, 8, 18, 18, 6 and its electron configuration is [Kr] 4d10 5s2 5p4. Tellurium was discovered by Franz Muller von Reichenstein in 1782 and first isolated by Martin Heinrich Klaproth in 1798. In its elemental form, tellurium has a silvery lustrous gray appearance.Elemental Tellurium The tellurium atom has a radius of 140 pm and a Van der Waals radius of 206 pm. Tellurium is most commonly sourced from the anode sludges produced as a byproduct of copper refining. The name Tellurium originates from the Greek word 'Tellus' meaning Earth. For more information on tellurium, including properties, safety data, research, and American Elements' catalog of tellurium products, visit the Tellurium Information Center.

HEALTH, SAFETY & TRANSPORTATION INFORMATION
Material Safety Data Sheet MSDS
Signal Word N/A
Hazard Statements N/A
Hazard Codes N/A
Risk Codes N/A
Safety Precautions N/A
RTECS Number N/A
Transport Information N/A
WGK Germany N/A
Globally Harmonized System of
Classification and Labelling (GHS)
N/A        

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PACKAGING SPECIFICATIONS FOR BULK & RESEARCH QUANTITIES
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.


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Recent Research & Development for Gallium

  • Wei-Sheng Liu, Shen-Yu Wu, Chao-Yu Hung, Ching-Hsuan Tseng, Yu-Lin Chang, Improving the optoelectronic properties of gallium ZnO transparent conductive thin films through titanium doping, Journal of Alloys and Compounds, Volume 616, 15 December 2014
  • Mohamed Bakr Mohamed, M. Yehia, Cation distribution and magnetic properties of nanocrystalline gallium substituted cobalt ferrite, Journal of Alloys and Compounds, Volume 615, 5 December 2014
  • Erkan Aydin, Mehmet Sankir, Nurdan Demirci Sankir, Conventional and rapid thermal annealing of spray pyrolyzed copper indium gallium sulfide thin films, Journal of Alloys and Compounds, Volume 615, 5 December 2014
  • Ming-Wei Wu, Pang-Hsin Lai, Chia-Hong Hong, Fang-Cheng Chou, The sintering behavior, microstructure, and electrical properties of gallium-doped zinc oxide ceramic targets, Journal of the European Ceramic Society, Volume 34, Issue 15, December 2014
  • V.V. Serikov, N.M. Kleinerman, A.V. Vershinin, N.V. Mushnikov, A.V. Protasov, L.A. Stashkova, O.I. Gorbatov, A.V. Ruban, Yu.N. Gornostyrev, Formation of solid solutions of gallium in Fe–Cr and Fe–Co alloys: Mössbauer studies and first-principles calculations, Journal of Alloys and Compounds, Volume 614, 25 November 2014
  • Jae-Hun Jeong, Dong-Won Jung, Eun-Suok Oh, Lithium storage characteristics of a new promising gallium selenide anodic material, Journal of Alloys and Compounds, Volume 613, 15 November 2014
  • Rui Sun, Hua-Yu Zhang, Gui-Gen Wang, Jie-Cai Han, Can Zhu, Xiao-Peng Liu, Lin Cui, Selective growth and characterization of gallium nitride nanowires through an N-Ga2O3 layer, Ceramics International, Volume 40, Issue 9, Part A, November 2014
  • Jia Liu, Weijia Zhang, Dengyuan Song, Qiang Ma, Lei Zhang, Hui Zhang, Xiaobo Ma, Haiyang Song, Gallium-doped zinc oxide targets fabricated by sintering: Impact of target quality on sputtered thin film properties, Materials Science in Semiconductor Processing, Volume 27, November 2014
  • Adel M.F. Alhalawani, Lana Placek, Anthony W. Wren, Declan J. Curran, Daniel Boyd, Mark R. Towler, Influence of gallium on the surface properties of zinc based glass polyalkenoate cements, Materials Chemistry and Physics, Volume 147, Issue 3, 15 October 2014
  • O. Toma, S. Georgescu, Excited-state absorption in erbium-doped calcium lithium niobium gallium garnet, Journal of Luminescence, Volume 154, October 2014
  • Jiming Bian, Lihua Miao, Fuwen Qin, Dong Zhang, Weifeng Liu, Hongzhu Liu, Low-temperature ECR-PEMOCVD deposition of high-quality crystalline gallium nitride films: A comparative study of intermediate layers for growth on amorphous glass substrates, Materials Science in Semiconductor Processing, Volume 26, October 2014
  • Liangliang Huang, Yong Fan, Hongwei Ma, Caixia Li, Li Wang, Synthesis and characterizations of two NbO topological gallium phosphites with low framework density, Microporous and Mesoporous Materials, Volume 196, 15 September 2014
  • Jianwei Wang, Alberto Santamato, Pisu Jiang, Damien Bonneau, Erman Engin, Joshua W. Silverstone, Matthias Lermer, Johannes Beetz, Martin Kamp, Sven Höfling, Michael G. Tanner, Chandra M. Natarajan, Robert H. Hadfield, Sander N. Dorenbos, Val Zwiller, Jeremy L. O’Brien, Mark G. Thompson, Gallium arsenide (GaAs) quantum photonic waveguide circuits, Optics Communications, Volume 327, 15 September 2014
  • Wyatt H. Strong, David V. Forbes, Seth M. Hubbard, Investigation of deep level defects in electron irradiated indium arsenide quantum dots embedded in a gallium arsenide matrix, Materials Science in Semiconductor Processing, Volume 25, September 2014
  • Somayeh Behzad, Raad Chegel, Rostam Moradian, Masoud Shahrokhi, Theoretical exploration of structural, electro-optical and magnetic properties of gallium-doped silicon carbide nanotubes, Superlattices and Microstructures, Volume 73, September 2014
  • Elissa H. Williams, Albert V. Davydov, Vladimir P. Oleshko, Kristen L. Steffens, Igor Levin, Nancy J. Lin, Kris A. Bertness, Amy K. Manocchi, John A. Schreifels, Mulpuri V. Rao, Solution-based functionalization of gallium nitride nanowires for protein sensor development, Surface Science, Volume 627, September 2014
  • H.V. Thanh Luong, J.C. Liu, Flotation separation of gallium from aqueous solution – Effects of chemical speciation and solubility, Separation and Purification Technology, Volume 132, 20 August 2014
  • Yin-Rou Huang, Tzu-Wei Huang, Tzu-Hui Wang, Yu-Chen Tsai, Improved performance of dye-sensitized solar cells using gallium nitride–titanium dioxide composite photoelectrodes, Journal of Colloid and Interface Science, Volume 428, 15 August 2014
  • Andrew Ritchie, Shaylin Eger, Chelsey Wright, Daniel Chelladurai, Cuyler Borrowman, Weine Olovsson, Martin Magnuson, Jai Verma, Debdeep Jena, Huili Grace Xing, Christian Dubuc, Stephen Urquhart, Strain Sensitivity in the Nitrogen 1s NEXAFS Spectra of Gallium Nitride, Applied Surface Science, Available online 13 August 2014
  • Helge Reinsch, Dirk De Vos, Structures and properties of Gallium-MOFs with MIL-53-topology based on aliphatic linker molecules, Microporous and Mesoporous Materials, Available online 8 August 2014

Recent Research & Development for Tellurides

  • Xiaokang Fan, Kefeng Li, Xia Li, Peiwen Kuan, Xin Wang, Lili Hu, Spectroscopic properties of 2.7 µm emission in Er3+ doped telluride glasses and fibers, Journal of Alloys and Compounds, Volume 615, 5 December 2014
  • Phuoc Huu Le, Chien-Neng Liao, Chih Wei Luo, Jihperng Leu, Thermoelectric properties of nanostructured bismuth–telluride thin films grown using pulsed laser deposition, Journal of Alloys and Compounds, Volume 615, 5 December 2014
  • Masayuki Takashiri, Kazuo Imai, Masato Uyama, Harutoshi Hagino, Saburo Tanaka, Koji Miyazaki, Yoshitake Nishi, Effects of homogeneous irradiation of electron beam on crystal growth and thermoelectric properties of nanocrystalline bismuth selenium telluride thin films, Journal of Alloys and Compounds, Volume 612, 5 November 2014
  • Tobias Rosenthal, Simon Welzmiller, Lukas Neudert, Philipp Urban, Andy Fitch, Oliver Oeckler, Novel superstructure of the rocksalt type and element distribution in germanium tin antimony tellurides, Journal of Solid State Chemistry, Volume 219, November 2014
  • Zhenzhou Rong, Xi'an Fan, Fan Yang, Xinzhi Cai, Guangqiang Li, Microwave activated hot pressing: A new consolidation technique and its application to fine crystal bismuth telluride based compounds, Powder Technology, Volume 267, November 2014
  • Bárbara Tirloni, Adelheid Hagenbach, Ernesto Schulz Lang, Ulrich Abram, Thiocarbamoylbenzimidophenylselenide and -telluride and their reactions with metal ions, Polyhedron, Volume 79, 5 September 2014
  • M.J. Winiarski, M. Samsel-Czekala, A. Ciechan, Strain effects on electronic structure and superconductivity in the iron telluride, Intermetallics, Volume 52, September 2014
  • Mohsen K. Keshavarz, Dimitri Vasilevskiy, Remo A. Masut, Sylvain Turenne, Synthesis and characterization of bismuth telluride-based thermoelectric nanocomposites containing MoS2 nano-inclusions, Materials Characterization, Volume 95, September 2014
  • K. Aravinth, G. Anandha Babu, P. Ramasamy, Silver gallium telluride (AgGaTe2) single crystal: Synthesis, accelerated crucible rotation-Bridgman growth and characterization, Materials Science in Semiconductor Processing, Volume 24, August 2014
  • Zhaoyun Ge, Ling Xu, Renqi Zhang, Zhaoguo Xue, Hongyu Wang, Jun Xu, Yao Yu, Weining Su, Zhongyuan Ma, Kunji Chen, Improved performance of silicon nanowire/cadmium telluride quantum dots/organic hybrid solar cells, Applied Surface Science, Available online 18 July 2014
  • Esha V. Shah, Debesh R. Roy, A comparative DFT study on electronic, thermodynamic and optical properties of telluride compounds, Computational Materials Science, Volume 88, 1 June 2014
  • Roberta Cargnelutti, Ernesto S. Lang, Davi F. Back, Ricardo F. Schumacher, Electrophilic cyclization of homopropargyl tellurides: Synthesis and supramolecular structures of 2-aryl-3-iodo-1-phenyl-tellurophenium iodides and polyiodides, Polyhedron, Volume 73, 8 May 2014
  • Hyoungseok Kim, Kyounghoon Cha, Vasilis M. Fthenakis, Parikhit Sinha, Tak Hur, Life cycle assessment of cadmium telluride photovoltaic (CdTe PV) systems, Solar Energy, Volume 103, May 2014
  • Wen Hsuan Chao, Yi Ray Chen, Shih Chun Tseng, Ping Hsing Yang, Ren Jye Wu, Jenn Yeu Hwang, Enhanced thermoelectric properties of metal film on bismuth telluride-based materials, Thin Solid Films, Available online 18 April 2014
  • Yang Zhou, Liangliang Li, Qing Tan, Jing-Feng Li, Thermoelectric properties of Pb-doped bismuth telluride thin films deposited by magnetron sputtering, Journal of Alloys and Compounds, Volume 590, 25 March 2014
  • Nicolas Berchenko, Sergey Fadeev, Volodymyr Savchyn, Kurban Kurbanov, Malgorzata Trzyna, Jozef Cebulski, Pb–Te–O phase equilibrium diagram and the lead telluride thermal oxidation, Thermochimica Acta, Volume 579, 10 March 2014
  • B. Bahloul, A. Bentabet, L. Amirouche, Y. Bouhadda, S. Bounab, B. Deghfel, N. Fenineche, Ab initio calculations of structural, electronic, optical and thermodynamic properties of alkaline earth tellurides BaxSr1-XTe, Journal of Physics and Chemistry of Solids, Volume 75, Issue 3, March 2014
  • Liyan Zhou, Shancheng Yan, Tao Lu, Yi Shi, Jianyu Wang, Fan Yang, Indium telluride nanotubes: Solvothermal synthesis, growth mechanism, and properties, Journal of Solid State Chemistry, Volume 211, March 2014
  • Zhenyu Zhang, Bo Wang, Xianzhong Zhang, A maximum in the hardness of nanotwinned cadmium telluride, Scripta Materialia, Volumes 72–73, February 2014
  • Guoqiu Yuan, Yusong Li, Ning Bao, Jianwen Miao, Cunwang Ge, Yihong Wang, Facile synthesis and thermoelectric studies of n-type bismuth telluride nanorods with cathodic stripping Te electrode, Materials Chemistry and Physics, Volume 143, Issue 2, 15 January 2014