Gd3Ga5O12 is a crystalline solid used as a semiconductor and in photo optic applications. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.

Gadolinium is a Block F, Group 3, Period 6 element. The electronic configuration is [Xe]4f⁷5d¹6s². In its elemental form gadolinium's CAS number is 7440-54-2. The gadolinium atom has a radius of 178.7.pm and it's Van der Waals radius is unknown. Gadolinium is utilized for both its high magnetic moment (7.94µB) and in phosphors and scintillator material. When complexed with EDTA ligands, it is used as an injectable contrast agent for patients undergoing magnetic resonance imaging. Gadolinium is available as metal and compounds with purities from 99% to 99.999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. With its high magnetic moment, gadolinium can reduce relaxation times and thereby enhance signal intensity. The extra stable half-full 4f electron shell with no low lying energy levels creates applications as an inert phosphor host. Gadolinium can therefore act as hosts for x-ray cassettes and in scintillator materials for computer tomography.

Gallium is a Block P, Group 13, Period 4 element. The electronic configuration is [Ar] 3d¹⁰ 4s² 4p¹. In its elemental form gallium's CAS number is 7440-55-3. The gallium atom has a radius of 122.1.pm and it's Van der Waals radius is 187.pm. Gallium is one of three elements that naturally occur as a liquid at room temperature. The other two are mercury and cesium. The application of gallium that has received the most attention is the production of semiconducting compounds. Of these, the most important are the compounds of gallium with antimony, arsenic or phosphor. Nowadays gallium arsenide (Ga-As) is undoubtedly the most used. This compound is used in the production of several electronic parts such as diodes and transistors, made for voltage rectification, signal amplification, etc. Other gallium arsenide applications are the semiconductor "lasing" and microwave generation and also in sensors to measure temperature, light or magnetic field.

American Elements semi conducting materials are crystal structures produced from ultra high purity starting materials synthesized by our high purity production facility which includes several large electric muffle furnaces, a tube furnace for hydrogen reduction, 50 gallon glass-lined Pfaudler reactors supported by our analytical laboratory containing X-ray diffraction, SEM, AA, BET surface area, and ICP Spectrometry for trace metals analysis. See a discussion of American Elements Ultra High Purity and Analytical capabilities. See Crystal Growth for processes used to fabricate semiconductor materials, which include:

• Crystal "pulling" by the Czochaiski method for production of semiconductor materials
• Flux growth and gradient freeze
• Directional solidification of fluorites using both the Bridgman-Stockbarger and float zoning techniques