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Hafnium Carbide
HfC
Product
Product Code
Order or Specifications
99% Hafnium Carbide
HF-C-02
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99.5% Hafnium Carbide
HF-C-025
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99.9% Hafnium Carbide
HF-C-03
 Contact American Elements
99.95% Hafnium Carbide
HF-C-035
 Contact American Elements
99.99% Hafnium Carbide
HF-C-04
 Contact American Elements
99.999% Hafnium Carbide
HF-C-05
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Hafnium Carbide is available in numerous forms and custom shapes including disc, granules, ingot, pellets, pieces, powder, rod, tablets and sputtering target. High purity forms also include Carbide powder, submicron powder and nanoscale, single crystal or polycrystalline forms.

Like diamond, a pure carbon compound, Carbide compounds tend to be extremely hard, refractory and resistant to wear, corrosion and heat, making them excellent candidates for coatings for drills and other tools. They often have other valuable properties in combination with toughness, such as electrical conductivity, low thermal expansion and abrasiveness.

Hafnium is replacing polysilicon as the principle gate or electrode material in metal oxide semiconductor field effect transistors (MOSFETs) which are the basis for all modern semiconductors. As semiconductors have gotten smaller, the limiting factor in further size reduction has been the ability of the silicon oxide gate to perform below 10 angstroms where leakage occurs. Recent research has been devoted to the development of High-k materials which can function as a di-electric barrier or gate with lower leakage. Using hafnium based alloys as this di-electric gate has allowed for the development of MOSFET gates smaller than 10 angstroms. This allows for further size reduction, reduced switching power requirements and improved performance.

Hafnium Carbide is generally immediately available in most volumes. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.

Hafnium is a Block D, Group 4, Period 6 element. The electronic configuration is [Xe] 4f14 5d2 6s2. In its elemental form hafnium's CAS number is 7440-58-6. The hafnium atom has a radius of 156.4.pm and it's Van der Waals radius is 200.pm. Hafnium is one of the Group IV transition elements that is refined from various zirconic mineral deposits. Hafnium is available as metal and compounds with purities from 99% to 99.999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder.
Formula CAS No. Appearance Molecular Weight
HfC 12069-85-1 Powder 190.50
PRODUCT CATALOG Submicron & Nanopowder Tolling Ultra High Purity Sputtering Target Crystal Growth Rod, Plate, Powder, etc.
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Recent Research & Development for Hafnium

  • Synthesis and Catalysis of Di- and Tetranuclear Metal Sandwich-Type Silicotungstates [(gamma-SiW10O36)2M2(mu-OH)2](10-) and [(gamma-SiW10O36)2M4(mu4-O)(mu-OH)6](8-) (M = Zr or Hf). J Am Chem Soc. 2008 Mar 28; [Epub ahead of print]

  • Highly active and stereoselective zirconium and hafnium alkoxide initiators for solvent-free ring-opening polymerization of rac-lactide. Chem Commun (Camb). 2008 Mar 21;(11):1293-5. Epub 2008 Feb 15.

  • Fluorinated Diarylamido Complexes of Lithium, Zirconium, and Hafnium. Inorg Chem. 2008 Feb 23; [Epub ahead of print]

  • Protection of short-time enamel erosion by different tetrafluoride compounds. Arch Oral Biol. 2008 Feb 16; [Epub ahead of print]

  • Routes to new hafnium(IV) tetraaryl porphyrins and crystal structures of unusual phosphate-, sulfate-, and peroxide-bridged dimers. Inorg Chem. 2008 Jan 21;47(2):454-67. Epub 2007 Dec 19.

  • Characterisation of sol-gel prepared (HfO(2))(x)(SiO(2))(1)-(x) (x=0.1, 0.2 and 0.4) by (1)H, (13)C, (17)O and (29)Si MAS NMR, FTIR and TGA. Solid State Nucl Magn Reson. 2008 Jan-Feb;33(1-2):16-24. Epub 2007 Nov 5.

  • A fast response hafnium selective polymeric membrane electrode based on N,N'-bis(alpha-methyl-salicylidene)-dipropylenetriamine as a neutral carrier. J Hazard Mater. 2007 Dec 26; [Epub ahead of print]

  • Oxygen-17 hyperfine structures in the pure rotational spectra of SrO, SnO, BaO, HfO and ThO. Phys Chem Chem Phys. 2007 Nov 28;9(44):5897-901. Epub 2007 Oct 9.

  • Measurement of absolute intensities of some prompt gamma-lines from the 91Zr, 143Nd, 177Hf and 116,118-120,122,124Sn(n,gamma) reactions and isomeric cross-sections of 123m,125mSn by in-beam gamma-spectroscopy method. Appl Radiat Isot. 2007 Nov;65(11):1290-2. Epub 2007 Jul 10.

  • Resistance switching characteristics of HfO2 film with electrode for resistance change random access memory. J Nanosci Nanotechnol. 2007 Nov;7(11):4139-42.

  • Extreme N[triple bond]N bond elongation and facile N-atom functionalization reactions within two structurally versatile new families of group 4 bimetallic "side-on-bridged" dinitrogen complexes for zirconium and hafnium. J Am Chem Soc. 2007 Oct 24;129(42):12690-2. Epub 2007 Sep 29. No abstract available.

  • Theoretical prediction of intrinsic self-trapping of electrons and holes in monoclinic HfO2. Phys Rev Lett. 2007 Oct 12;99(15):155504. Epub 2007 Oct 12.

  • Chemically assisted directed assembly of carbon nanotubes for the fabrication of large-scale device arrays. J Am Chem Soc. 2007 Oct 3;129(39):11964-8. Epub 2007 Sep 7.

  • Formation and characterization of the oxygen-rich hafnium dioxygen complexes: OHf(eta2-O2)(eta2-O3), Hf(eta2-O2)3, and Hf(eta2-O2)4. J Phys Chem A. 2007 Sep 20;111(37):8973-9. Epub 2007 Aug 24.

  • Adsorption behaviors of high-valence metal ions on desferrioxamine B immobilization nylon 6,6 chelate fiber under highly acidic conditions. J Colloid Interface Sci. 2007 Sep 1;313(1):359-62. Epub 2007 Apr 17.

  • Effects of fine metal oxide particle dopant on the acoustic properties of silicone rubber lens for medical array probe. IEEE Trans Ultrason Ferroelectr Freq Control. 2007 Aug;54(8):1589-95.

  • Metal triflate-catalyzed cationic benzylation and allylation of 1,3-dicarbonyl compounds. J Org Chem. 2007 Jul 6;72(14):5161-7. Epub 2007 Jun 8.

  • Structural investigations on the hydrolysis and condensation behavior of pure and chemically modified alkoxides. 1. Transition metal (Hf and Ta) alkoxides. J Phys Chem B. 2007 Jul 5;111(26):7501-18. Epub 2007 Jun 5.

  • Analysis of FT-IR spectra of dicyclopentadienyl (bis-substituted cyclopentadienyl) dithiocyano of titanium, zirconium and hafnium. Spectrochim Acta A Mol Biomol Spectrosc. 2007 Jul;67(3-4):1016-8. Epub 2006 Sep 24.

  • Isotopic portrayal of the Earth's upper mantle flow field. Nature. 2007 Jun 28;447(7148):1069-74.

 

 

 

 

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