American Elements: Hafnium Foil Supplier & Tech Info

See research below. American Elements specializes in producing Hafnium as rolled foils and sheets in various thicknesses and sizes. Most foils are produced from cast ingots for use in coating and thin film Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes including Ultra High Purity (99.9+%) thin film foil

Ultra High Purity (99.9+%) thin film foil

Thermal and Electron Beam (E-Beam) Evaporation, Low Temperature Organic Evaporation, Atomic Layer Deposition (ALD), Organometallic and Chemical Vapor Deposition (MOCVD) for specific applications such as fuel cells and solar energy. Thickness can range from 0.003" to approximately 2mm for all metals. Some metals can also be rolled down as thin as 0.001". Piece sizes are available up to approximately 7" maximum width. Maximum lengths of about 20" can be obtained with a nominal thickness between about 0.005" and 0.020" for thin film deposition on glass or metal substrates. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles (See also application discussion at Nanotechnology Information and at Quantum Dots) and in the form of solutions and organometallics.

We also produce Hafnium as rods, powder and plates. Other shapes are available by request.

Hafnium is a Block D, Group 4, Period 6 element. The electronic configuration is [Xe] 4f¹⁴ 5d² 6s². In its elemental form hafnium's CAS number is 7440-58-6. The hafnium atom has a radius of 156.4.pm and it's Van der Waals radius is 200.pm. Hafnium is one of the Group IV transition elements that is refined from various zirconic mineral deposits. Hafnium is available as metal and compounds with purities from 99% to 99.999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. It's primary uses are due to its ability as a nuclear "getter" or absorber of neutrons. It is a primary component in nuclear control rods for this purpose. It also finds uses as a dopant in the alloy of steel and titanium. It is also used in the production of mantles for high intensity incandescent lamps. Hafnium is replacing polysilicon as the principle gate or electrode material in metal oxide semiconductor field effect transistors (MOSFETs) which are the basis for all modern semiconductors. As semiconductors have gotten smaller, the limiting factor in further size reduction has been the ability of the silicon oxide gate to perform below 10 angstroms where leakage occurs. Recent research has been devoted to the development of High-k materials which can function as a di-electric barrier or gate with lower leakage. Using hafnium based alloys as this di-electric gate has allowed for the development of MOSFET gates smaller than 10 angstroms. This allows for further size reduction, reduced switching power requirements and improved performance.