Hafnium Metal is available as disc, granules, ingot, pellets, pieces, powder, rod, sputtering target, wire. Ultra high purity and high purity forms also include metal powder, submicron powder and nanoscale, quantum dots, targets for thin film deposition, pellets for evaporation and single crystal or polycrystalline forms. Elements can also be introduced into alloys or other systems as fluorides, oxides or chlorides or as solutions. Hafnium metal is generally immediately available in most volumes.American Elements produces to many standard grades when applicable, including Mil Spec (military grade); ACS, Reagent and Technical Grade; Food, Agricultural and Pharmaceutical Grade; Optical Grade, USP and EP/BP (European Pharmacopoeia/British Pharmacopoeia)and follows applicable ASTM testing standards.Typical and custom packaging is available. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.
Hafnium is a Block D, Group 4, Period 6 element. The number of electrons in each of Hafnium's shells is 2, 8, 18, 32, 10, 2 and its electronic configuration is [Xe] 4f14 5d2 6s2. In its elemental form hafnium's CAS number is 7440-58-6. The hafnium atom has a radius of 156.4.pm and it's Van der Waals radius is 200.pm. Hafnium is one of the Group IV transition elements that is refined from various zirconic mineral deposits. Hafnium is available as metal and compounds with purities from 99% to 99.999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. It's primary uses are due to its ability as a nuclear "getter" or absorber of neutrons. It is a primary component in nuclear control rods for this purpose. It also finds uses as a dopant in the alloy of steel and titanium. It is also used in the production of mantles for high intensity incandescent lamps. Hafnium is replacing polysilicon as the principle gate or electrode material in metaloxide semiconductor field effect transistors (MOSFETs) which are the basis for all modern semiconductors. As semiconductors have gotten smaller, the limiting factor in further size reduction has been the ability of the silicon oxide gate to perform below 10 angstroms where leakage occurs. Recent research has been devoted to the development of High-k materials which can function as a di-electric barrier or gate with lower leakage. Using hafnium based alloys as this di-electric gate has allowed for the development of MOSFET gates smaller than 10 angstroms. This allows for further size reduction, reduced switching power requirements and improved performance. Hafnium was first discovered by Dirk Coster in 1923. See Hafnium research below.
PACKAGING SPECIFICATIONS FOR BULK & RESEARCH QUANTITIES
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.
Monte Carlo dose enhancement studies in microbeam radiation therapy.
Martínez-Rovira I, Prezadoa Y.
Med Phys. 2011 Jul;38(7):4430-9.
PMID:
21859044
[PubMed - in process]
Electronic structure characterization of La incorporated Hf-based high-k gate dielectrics by NEXAFS.
Yamamoto T, Ogawa S, Kunisu M, Tsuji J, Kita K, Saeki M, Oku Y, Arimura H, Kitano N, Hosoi T, Shimura T, Watanabe H.
J Nanosci Nanotechnol. 2011 Apr;11(4):2823-8.
PMID:
21776638
[PubMed - indexed for MEDLINE]
Oxygen-containing gas-phase diatomic trications and tetracations: ReO(z+), NbO(z+) and HfO(z+) (z = 3, 4).
Brites V, Franzreb K, Harvey JN, Sayres SG, Ross MW, Blumling DE, Castleman AW, Hochlaf M.
Phys Chem Chem Phys. 2011 Sep 7;13(33):15233-43. Epub 2011 Jul 15.
PMID:
21761073
[PubMed - in process]
Tris(?-cyclo-penta-dien-yl)hafnium(III).
Burlakov VV, Arndt P, Spannenberg A, Rosenthal U.
Acta Crystallogr Sect E Struct Rep Online. 2011 May 1;67(Pt 5):m629. Epub 2011 Apr 22.
PMID:
21754338
[PubMed]
Synthesis of freestanding HfO2 nanostructures.
Kidd T, O'Shea A, Boyle K, Wallace J, Strauss L.
Nanoscale Res Lett. 2011 Apr 5;6(1):294.
PMID:
21711786
[PubMed - in process]
Preparation, Structure, and Ethylene (Co)Polymerization Behavior of Group IV Metal Complexes with an [OSSO]-Carborane Ligand.
Hu P, Wang JQ, Wang F, Jin GX.
Chemistry. 2011 Jul 25;17(31):8576-83. doi: 10.1002/chem.201100291. Epub 2011 Jun 21.
PMID:
21695738
[PubMed - in process]
Temperature effect on electrospinning of nanobelts: the case of hafnium oxide.
Su Y, Lu B, Xie Y, Ma Z, Liu L, Zhao H, Zhang J, Duan H, Zhang H, Li J, Xiong Y, Xie E.
Nanotechnology. 2011 Jul 15;22(28):285609. Epub 2011 Jun 9.
PMID:
21659687
[PubMed - in process]
Cytotoxicity and physicochemical properties of hafnium oxide nanoparticles.
Field JA, Luna-Velasco A, Boitano SA, Shadman F, Ratner BD, Barnes C, Sierra-Alvarez R.
Chemosphere. 2011 Sep;84(10):1401-7. Epub 2011 May 24.
PMID:
21605889
[PubMed - in process]
The hafnium-mediated NH activation of an amido-borane.
Jacobs EA, Fuller AM, Lancaster SJ, Wright JA.
Chem Commun (Camb). 2011 May 28;47(20):5870-2. Epub 2011 Apr 18.
PMID:
21503290
[PubMed]
Effects of substrate temperatures on the structure and properties of hafnium dioxide films.
Jiao H, Cheng X, Lu J, Bao G, Liu Y, Ma B, He P, Wang Z.
Appl Opt. 2011 Mar 20;50(9):C309-15. doi: 10.1364/AO.50.00C309.
PMID:
21460956
[PubMed]
The preparation of HfC/C ceramics via molecular design.
Inzenhofer K, Schmalz T, Wrackmeyer B, Motz G.
Dalton Trans. 2011 May 7;40(17):4741-5. Epub 2011 Mar 24.
PMID:
21431232
[PubMed]
Probing the thermal decomposition behaviors of ultrathin HfO2 films by an in situ high temperature scanning tunneling microscope.
Xue K, Wang L, An J, Xu J.
Nanotechnology. 2011 May 13;22(19):195705. Epub 2011 Mar 23.
PMID:
21430314
[PubMed - indexed for MEDLINE]
Effect of native defects and Co doping on ferromagnetism in HfO2: first-principles calculations.
Han C, Yan SS, Lin XL, Hu SJ, Zhao MW, Yao XX, Chen YX, Liu GL, Mei LM.
J Comput Chem. 2011 May;32(7):1298-302. doi: 10.1002/jcc.21711. Epub 2010 Dec 16.
PMID:
21425287
[PubMed - indexed for MEDLINE]
Separation of lanthanum, hafnium, barium and radiotracers yttrium-88 and barium-133 using crystalline zirconium phosphate and phosphonate compounds as prospective materials for a Ra-223 radioisotope generator.
Möller T, Bestaoui N, Wierzbicki M, Adams T, Clearfield A.
Appl Radiat Isot. 2011 Jul;69(7):947-54. Epub 2011 Feb 26.
PMID:
21421323
[PubMed]
Strong influence of polymer architecture on the microstructural evolution of hafnium-alkoxide-modified silazanes upon ceramization.
Papendorf B, Nonnenmacher K, Ionescu E, Kleebe HJ, Riedel R.
Small. 2011 Apr 4;7(7):970-8. doi: 10.1002/smll.201001938. Epub 2011 Mar 7.
PMID:
21381195
[PubMed - indexed for MEDLINE]
Nanoelectronics: Flat transistors get off the ground.
Schwierz F.
Nat Nanotechnol. 2011 Mar;6(3):135-6. No abstract available.
PMID:
21372836
[PubMed - indexed for MEDLINE]
Salen complexes of zirconium and hafnium: synthesis, structural characterization, controlled hydrolysis, and solvent-free ring-opening polymerization of cyclic esters and lactides.
Saha TK, Ramkumar V, Chakraborty D.
Inorg Chem. 2011 Apr 4;50(7):2720-2. Epub 2011 Mar 3.
PMID:
21370885
[PubMed - indexed for MEDLINE]
Comparative study of Laser induce damage of HfO2/SiO2 and TiO2/SiO2 mirrors at 1064 nm.
Jiao H, Ding T, Zhang Q.
Opt Express. 2011 Feb 28;19(5):4059-66. doi: 10.1364/OE.19.004059.
PMID:
21369234
[PubMed - indexed for MEDLINE]
Rationally fabricating hollow particles of complex oxides by a templateless hydrothermal route: the case of single-crystalline SrHfO3 hollow cuboidal nanoshells.
Ye T, Dong Z, Zhao Y, Yu J, Wang F, Zhang L, Zou Y.
Dalton Trans. 2011 Mar 21;40(11):2601-6. Epub 2011 Feb 2.
PMID:
21290081
[PubMed - indexed for MEDLINE]
Syntheses and structures of the first terminal phosphanylphosphido complex of hafnium [Cp2Hf(Cl){?(1)-(Me3Si)P-P(NEt2)2}] and the first zirconocene-phosphanylphosphinidene dimer [Cp2Zr{?(2)-P-P(NEt2)2}2ZrCp2].
Grubba R, Wisniewska A, Baranowska K, Matern E, Pikies J.
Dalton Trans. 2011 Mar 7;40(9):2017-24. Epub 2011 Jan 31.
PMID:
21283857
[PubMed]
Hafnium Metal is available as disc, granules, ingot, pellets, pieces, powder, rod, sputtering target, wire. Ultra high purity and high purity forms also include metal powder, submicron powder and nanoscale, quantum dots, targets for thin film deposition, pellets for evaporation and single crystal or polycrystalline forms. Elements can also be introduced into alloys or other systems as fluorides, oxides or chlorides or as solutions. Hafnium metal is generally immediately available in most volumes.American Elements produces to many standard grades when applicable, including Mil Spec (military grade); ACS, Reagent and Technical Grade; Food, Agricultural and Pharmaceutical Grade; Optical Grade, USP and EP/BP (European Pharmacopoeia/British Pharmacopoeia)and follows applicable ASTM testing standards.Typical and custom packaging is available. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.
Hafnium is a Block D, Group 4, Period 6 element. The number of electrons in each of Hafnium's shells is 2, 8, 18, 32, 10, 2 and its electronic configuration is [Xe] 4f14 5d2 6s2. In its elemental form hafnium's CAS number is 7440-58-6. The hafnium atom has a radius of 156.4.pm and it's Van der Waals radius is 200.pm. Hafnium is one of the Group IV transition elements that is refined from various zirconic mineral deposits. Hafnium is available as metal and compounds with purities from 99% to 99.999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. It's primary uses are due to its ability as a nuclear "getter" or absorber of neutrons. It is a primary component in nuclear control rods for this purpose. It also finds uses as a dopant in the alloy of steel and 
titanium. It is also used in the production of mantles for high intensity incandescent lamps. Hafnium is replacing polysilicon as the principle gate or electrode material in metal oxide semiconductor field effect transistors (MOSFETs) which are the basis for all modern semiconductors. As semiconductors have gotten smaller, the limiting factor in further size reduction has been the ability of the silicon oxide gate to perform below 10 angstroms where leakage occurs. Recent research has been devoted to the development of High-k materials which can function as a di-electric barrier or gate with lower leakage. Using hafnium based alloys as this di-electric gate has allowed for the development of MOSFET gates smaller than 10 angstroms. This allows for further size reduction, reduced switching power requirements and improved performance. Hafnium was first discovered by Dirk Coster in 1923. See Hafnium research below.
