American Elements' AE Bullion™ group mints certified high purity Hafnium Bars from laboratory certified engineered materials with properties applicable to chemical vapor deposition (CVP) for thin film and laboratory standard impurity levels for short and long term physical possession and to allow for exposure and controlled risk to industrial demand fluctuations reflected in the global hafnium price. Bars are manufactured and minted under written SOPs (standard operating procedures) to assure quality and consistency by American Elements' AE Metals™ custom synthesis and refining group. Besides hafnium bars, hafnium coins and hafnium ingots may be purchased by funds, currency reserves, exchange-traded funds (ETFs), private investors, collectors and hobbyists to take direct physical title and possession of the metal with risk exposure from shortages or chemical/physical technology changes, such as in solar energy, and fuel cell developments, equivalent to movements in the industrial application price of Hafnium. American Elements offers bonded short and long term warehouse inventory services for AE Bullion™ coins to investors, funds and collectors who do not wish to take physical custody of the metal or lack secure storage or warehouse capabilities. The lowest possible bar unit price to Hafnium melt value ratio is maintained through state of the art mint and die systems and analytically certified blanks (planchet or flan) refined and pressed to exacting purity and weight. We also produce Hafnium as rod, pellets, powder, pieces, disc, granules, and wire, as nanoparticles and in compound forms, such as oxide. Hafnium Bars may be purchased in bulk or small quantity. Portfolios of different elemental metal bars or coins may also be structured and purchased from the AE Bullion™ group allowing for strategic risk allocation and indexing across a basket of metals.
Hafnium is a Block D, Group 4, Period 6 element. The electronic configuration is [Xe] 4f14 5d2 6s2. In its elemental form hafnium's CAS number is 7440-58-6. The hafnium atom has a radius of 156.4.pm and it's Van der Waals radius is 200.pm. Hafnium is one of the Group IV transition elements that is refined from various zirconic mineral deposits. Hafnium is available as metal and compounds with purities from 99% to 99.999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. It's primary uses are due to its ability as a nuclear "getter" or absorber of neutrons. It is a primary component in nuclear control rods for this purpose. It also finds uses as a dopant in the alloy of steel and titanium. It is also used in the production of mantles for high intensity incandescent lamps. Hafnium is replacing polysilicon as the principle gate or electrode material in metal oxide semiconductor field effect transistors (MOSFETs) which are the basis for all modern semiconductors. As semiconductors have gotten smaller, the limiting factor in further size reduction has been the ability of the silicon oxide gate to perform below 10 angstroms where leakage occurs. Recent research has been devoted to the development of High-k materials which can function as a di-electric barrier or gate with lower leakage. Using hafnium based alloys as this di-electric gate has allowed for the development of MOSFET gates smaller than 10 angstroms. This allows for further size reduction, reduced switching power requirements and improved performance. |
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Periodic table of the elements science and academic information, elements and advanced materials data, scientific presentations and all pages, designs, concepts, logos, and color schemes herein are the copyrighted proprietary rights and intellectual property of American Elements. American Elements is a U.S. Registered Trademark. © 2001-2009. American Elements. All rights reserved. |
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Recent Research & Development for Hafnium
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Catalytic transamidation reactions compatible with tertiary amide metathesis under ambient conditions.
Stephenson NA, Zhu J, Gellman SH, Stahl SS.
J Am Chem Soc. 2009 Jul 29;131(29):10003-8.
PMID: 19621957 [PubMed - in process]
Synthesis and structure of dinuclear hafnium(IV) and zirconium(IV) complexes sandwiched between 2 mono-lacunary alpha-Keggin polyoxometalates.
Nomiya K, Saku Y, Yamada S, Takahashi W, Sekiya H, Shinohara A, Ishimaru M, Sakai Y.
Dalton Trans. 2009 Jul 28;(28):5504-11. Epub 2009 May 29.
PMID: 19587994 [PubMed - in process]
Comparison of the synthesis of Ge nanocrystals in hafnium aluminum oxide and silicon oxide matrices.
Chew HG, Zheng F, Choi WK, Chim WK, Fitzgerald EA, Foo YL.
J Nanosci Nanotechnol. 2009 Feb;9(2):1577-81.
PMID: 19441574 [PubMed]
The controlled deposition of metal oxides onto carbon nanotubes by atomic layer deposition: examples and a case study on the application of V2O4 coated nanotubes in gas sensing.
Willinger MG, Neri G, Bonavita A, Micali G, Rauwel E, Herntrich T, Pinna N.
Phys Chem Chem Phys. 2009 May 21;11(19):3615-22. Epub 2009 Mar 30.
PMID: 19421470 [PubMed]
Atomic scale imaging and spectroscopy of individual electron trap states using force detected dynamic tunnelling.
Johnson JP, Zheng N, Williams CC.
Nanotechnology. 2009 Feb 4;20(5):55701. Epub 2009 Jan 12.
PMID: 19417360 [PubMed - indexed for MEDLINE]
Observation of Zr2(2+), Cd2(2+), Hf2(2+), W2(2+), and Pt2(2+) in the gas phase.
Franzreb K, Pis Diez R, Alonso JA.
J Chem Phys. 2009 Apr 14;130(14):144312.
PMID: 19368450 [PubMed]
Hafnium carbamates and ureates: new class of precursors for low-temperature growth of HfO2 thin films.
Pothiraja R, Milanov AP, Barreca D, Gasparotto A, Becker HW, Winter M, Fischer RA, Devi A.
Chem Commun (Camb). 2009 Apr 21;(15):1978-80. Epub 2009 Feb 25.
PMID: 19333463 [PubMed]
Internal correction of hafnium oxide spectral interferences and mass bias in the determination of platinum in environmental samples using isotope dilution analysis.
Rodríguez-Castrillón JA, Moldovan M, García Alonso JI.
Anal Bioanal Chem. 2009 May;394(1):351-62. Epub 2009 Mar 14.
PMID: 19288088 [PubMed]
Determination of microamounts of hafnium in zirconium using inductively coupled plasma atomic emission spectrometry and inductively coupled plasma mass spectrometry during their separation by ion exchange on Diphonix chelating resin.
Smolik M, Jakóbik-Kolon A.
Anal Chem. 2009 Apr 1;81(7):2685-7.
PMID: 19256520 [PubMed]
Reactive landing of gas-phase ions as a tool for the fabrication of metal oxide surfaces for in situ phosphopeptide enrichment.
Blacken GR, Volný M, Diener M, Jackson KE, Ranjitkar P, Maly DJ, Turecek F.
J Am Soc Mass Spectrom. 2009 Jun;20(6):915-26. Epub 2009 Jan 22.
PMID: 19251440 [PubMed - in process]
Isolation of a 177Hf complex formed by beta-decay of a 177Lu-labeled radiotherapeutic compound and NMR structural elucidation of the ligand and its Lu and Hf complexes.
Cagnolini A, D'Amelio N, Metcalfe E, Nguyen HD, Aime S, Swenson RE, Linder KE.
Inorg Chem. 2009 Apr 6;48(7):3114-24.
PMID: 19243162 [PubMed - indexed for MEDLINE]
Synthetic Studies on (-)-Lemonomycin: An Efficient Asymmetric Synthesis of Lemonomycinone Amide.
Wu YC, Bernadat G, Masson G, Couturier C, Schlama T, Zhu J.
J Org Chem. 2009 Feb 5. [Epub ahead of print]
PMID: 19196163 [PubMed - as supplied by publisher]
Fourier transform infrared spectroscopy and solid-state nuclear magnetic resonance studies of octadecyl modified metal oxides obtained from different silane precursors.
Kailasam K, Natile MM, Glisenti A, Müller K.
J Chromatogr A. 2009 Mar 20;1216(12):2345-54. Epub 2009 Jan 9.
PMID: 19178911 [PubMed - indexed for MEDLINE]
Hafnium transistor design for neural interfacing.
Parent DW, Basham EJ.
Conf Proc IEEE Eng Med Biol Soc. 2008;2008:3356-9.
PMID: 19163428 [PubMed - indexed for MEDLINE]
Sandwich-type Hf(IV) and Zr(IV)complexes composed of tri-lacunary Keggin polyoxometalates: structure of [M(3)(mu-OH)(3)(A-alpha-PW(9)O(34))(2)](9-) (M = Hf and Zr).
Saku Y, Sakai Y, Shinohara A, Hayashi K, Yoshida S, Kato CN, Yoza K, Nomiya K.
Dalton Trans. 2009 Feb 7;(5):805-13. Epub 2008 Dec 4.
PMID: 19156274 [PubMed - indexed for MEDLINE]
High-speed memory from carbon nanotube field-effect transistors with high-kappa gate dielectric.
Rinkiö M, Johansson A, Paraoanu GS, Törmä P.
Nano Lett. 2009 Feb;9(2):643-7.
PMID: 19152310 [PubMed]
Study on the formation of self-assembled monolayers on sol-gel processed hafnium oxide as dielectric layers.
Ting GG 2nd, Acton O, Ma H, Ka JW, Jen AK.
Langmuir. 2009 Feb 17;25(4):2140-7.
PMID: 19128035 [PubMed]
Enrichment/isolation of phosphorylated peptides on hafnium oxide prior to mass spectrometric analysis.
Rivera JG, Choi YS, Vujcic S, Wood TD, Colón LA.
Analyst. 2009 Jan;134(1):31-3. Epub 2008 Oct 21.
PMID: 19082170 [PubMed - in process]
A combined ab initio and Franck-Condon factor simulation study on the photodetachment spectrum of HfO2-.
Mok DK, Lee EP, Chau FT, Dyke JM.
Phys Chem Chem Phys. 2008 Dec 28;10(48):7270-7. Epub 2008 Oct 29.
PMID: 19060972 [PubMed - indexed for MEDLINE]
Generation of oxide nanopatterns by combining self-assembly of S-layer proteins and area-selective atomic layer deposition.
Liu J, Mao Y, Lan E, Banatao DR, Forse GJ, Lu J, Blom HO, Yeates TO, Dunn B, Chang JP.
J Am Chem Soc. 2008 Dec 17;130(50):16908-13.
PMID: 19053479 [PubMed - indexed for MEDLINE]
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