American Elements: Hafnium Oxide Nanopowder Supplier & Tech Info

Hafnium Oxide or Hafnia Nanopowder or Nanoparticles (HfO), nanodots or nanocrystals are white high surface area particles. Nanoscale Hafnium Oxide Nanoparticles are typically 5 - 100 nanometers (nm) with specific surface area (SSA) in the 25 - 50 m 2 /g range. Nano Hafnium Oxide Particles are also available in Ultra high purity and high purity and coated and dispersed forms. They are also available as a nanofluid through the AE Nanofluid production group. Nanofluids are generally defined as suspended nanoparticles in solution either using surfactant or surface charge technology. Nanofluid dispersion and coating selection technical guidance is also available. Other nanostructures include nanorods, nanowhiskers, nanohorns, nanopyramids and other nanocomposites. Surface functionalized nanoparticles allow for the particles to be preferentially adsorbed at the surface interface using chemically bound polymers. Development research is underway in Nano Electronics and Photonics materials, such as MEMS and NEMS, Bio Nano Materials, such as Biomarkers, Bio Diagnostics & Bio Sensors, and Related Nano Materials, for use in Polymers, Textiles, Fuel Cell Layers, Composites and Solar Energy materials. Nanopowders are analyzed for chemical composition by ICP, particle size distribution (PSD) by laser diffraction, and for Specific Surface Area (SSA) by BET multi-point correlation techniques. Novel nanotechnology applications also include Quantum Dots. High surface areas can also be achieved using solutions and using thin film by sputtering targets and evaporation technology using pellets, rod and foil. Applications for Hafnium oxide or hafnia nanocrystals include in fuel cells, in dielectric coatings and other electronic applications.

Hafnium is replacing polysilicon as the principle gate or electrode material in metal oxide semiconductor field effect transistors (MOSFETs) which are the basis for all modern semiconductors. As semiconductors have gotten smaller, the limiting factor in further size reduction has been the ability of the silicon oxide gate to perform below 10 angstroms where leakage occurs. Recent research has been devoted to the development of High-k materials which can function as a di-electric barrier or gate with lower leakage. Using hafnium based alloys as this di-electric gate has allowed for the development of MOSFET gates smaller than 10 angstroms. This allows for further size reduction, reduced switching power requirements and improved performance.

Hafnium Oxide Nano Particles are generally immediately available in most volumes. Additional technical, research and safety (MSDS) information is available.

Hafnium is a Block D, Group 4, Period 6 element. The electronic configuration is [Xe] 4f¹⁴ 5d² 6s². In its elemental form hafnium's CAS number is 7440-58-6. The hafnium atom has a radius of 156.4.pm and it's Van der Waals radius is 200.pm. Hafnium is one of the Group IV transition elements that is refined from various zirconic mineral deposits. Hafnium is available as metal and compounds with purities from 99% to 99.999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder.