American Elements specializes in producing high purity uniform shaped Hafnium Oxide Pellets with the highest possible density and smallest possible average grain sizes for use in semiconductor, Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes including Thermal and Electron Beam (E-Beam) Evaporation, Low Temperature Organic Evaporation, Atomic Layer Deposition (ALD), Metallic-Organic and Chemical Vapor Deposition (MOCVD). Our standard Pellet sizes range from 1/8" x 1/8" to 1/4" x 1/4" and 3 mm diameter. We can also provide Pellets outside this range for ultra high puritythin film applications, such as fuel cells and solar energy layers. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles (See also application discussion at Nanotechnology Information and at Quantum Dots) and in the form of solutions and organometallics.
We also produce Hafnium Oxide as pieces, tablets, powder, and sputtering target. Oxide compounds are not conductive to electricity. However, certain perovskite structured oxides are electronically conductive finding application in the cathode of solid oxide fuel cells and oxygen generation systems.American Elements produces to many standard grades when applicable, including Mil Spec (military grade); ACS, Reagent and Technical Grade; Food, Agricultural and Pharmaceutical Grade; Optical Grade, USP and EP/BP (European Pharmacopoeia/British Pharmacopoeia)and follows applicable ASTM testing standards.Typical and custom packaging is available. See safety data and research below and pricing/lead time above. Other shapes are available by request.
Hafnium is a Block D, Group 4, Period 6 element. The number of electrons in each of Hafnium's shells is 2, 8, 18, 32, 10, 2 and its electronic configuration is [Xe] 4f14 5d2 6s2. In its elemental form hafnium's CAS number is 7440-58-6.The hafnium atom has a radius of 156.4.pm and it's Van der Waals radius is 200.pm. Hafnium is not toxic. Hafnium is one of the Group IV transition elements that is refined from various zirconic mineral deposits. Hafnium is available as metal and compounds with purities from 99% to 99.999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. It's primary uses are due to its ability as a nuclear "getter" or absorber of neutrons. It is a primary component in nuclear control rods for this purpose. It also finds uses as a dopant in the alloy of steel and titanium. It is also used in the production of mantles for high intensity incandescent lamps. Hafnium is replacing polysilicon as the principle gate or electrode material in metaloxide semiconductor field effect transistors (MOSFETs) which are the basis for all modern semiconductors. As semiconductors have gotten smaller, the limiting factor in further size reduction has been the ability of the silicon oxide gate to perform below 10 angstroms where leakage occurs. Recent research has been devoted to the development of High-k materials which can function as a di-electric barrier or gate with lower leakage. Using hafnium based alloys as this di-electric gate has allowed for the development of MOSFET gates smaller than 10 angstroms. This allows for further size reduction, reduced switching power requirements and improved performance. Hafnium was first discovered by Dirk Coster in 1923. See Hafnium research below.
PACKAGING SPECIFICATIONS FOR BULK & RESEARCH QUANTITIES
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.
Fluorescence Signaling of Zr(4+) by Hydrogen Peroxide Assisted Selective Desulfurization of Thioamide.
Hwang J, Choi MG, Eor S, Chang SK.
Inorg Chem. 2012 Jan 19. [Epub ahead of print]
PMID:
22260347
[PubMed - as supplied by publisher]
Hafnium metallocene compounds used as cathode interfacial layers for enhanced electron transfer in organic solar cells.
Park K, Oh S, Jung D, Chae H, Kim H, Boo JH.
Nanoscale Res Lett. 2012 Jan 9;7(1):74. [Epub ahead of print]
PMID:
22230259
[PubMed - as supplied by publisher]
Synthesis of hafnium oxide-gold core-shell nanoparticles.
Dahal N, Chikan V.
Inorg Chem. 2012 Jan 2;51(1):518-22. Epub 2011 Dec 16.
PMID:
22221284
[PubMed - in process]
Di-?-hydroxido-bis-[tris-(4,4,4-trifluoro-1-phenyl-acetyl-acetonato-?O,O')hafnium(IV)] dimethyl-formamide disolvate.
Viljoen JA, Visser HG, Roodt A.
Acta Crystallogr Sect E Struct Rep Online. 2011 Dec 1;67(Pt 12):m1822-3. Epub 2011 Nov 25.
PMID:
22199601
[PubMed - in process]
Potential of high-Z contrast agents in clinical contrast-enhanced computed tomography.
Nowak T, Hupfer M, Brauweiler R, Eisa F, Kalender WA.
Med Phys. 2011 Dec;38(12):6469.
PMID:
22149830
[PubMed - in process]
Ni ion release, osteoblast-material interactions, and hemocompatibility of hafnium-implanted NiTi alloy.
Zhao T, Li Y, Zhao X, Chen H, Zhang T.
J Biomed Mater Res B Appl Biomater. 2011 Nov 28. doi: 10.1002/jbm.b.31989. [Epub ahead of print]
PMID:
22121018
[PubMed - as supplied by publisher]
Electrochemical oxide nanotube formation on the Ti-35Ta-xHf alloys for dental materials.
Moon BH, Jeong YH, Choe HC.
J Nanosci Nanotechnol. 2011 Aug;11(8):7428-32.
PMID:
22103212
[PubMed - indexed for MEDLINE]
Environmentally stable flexible metal-insulator-metal capacitors using zirconium-silicate and hafnium-silicate thin film composite materials as gate dielectrics.
Meena JS, Chu MC, Wu CS, Ravipati S, Ko FH.
J Nanosci Nanotechnol. 2011 Aug;11(8):6858-67.
PMID:
22103091
[PubMed]
In situ gas phase measurements during metal alkylamide atomic layer deposition.
Maslar JE, Kimes WA, Sperling BA.
J Nanosci Nanotechnol. 2011 Sep;11(9):8226-32.
PMID:
22097559
[PubMed]
Tetra-kis(5,7-dimethyl-quinolin-8-olato-?N,O)hafnium(IV) dimethyl-formamide disolvate.
Viljoen JA, Visser HG, Roodt A.
Acta Crystallogr Sect E Struct Rep Online. 2011 Oct 1;67(Pt 10):m1428-9. Epub 2011 Sep 30.
PMID:
22058710
[PubMed]
Synthesis, characterization, and materials chemistry of Group 4 silylimides.
Cosham SD, Johnson AL, Molloy KC, Kingsley AJ.
Inorg Chem. 2011 Dec 5;50(23):12053-63. Epub 2011 Nov 4.
PMID:
22053704
[PubMed - in process]
Preparation and physical properties of early-late heterobimetallic compounds featuring Ir-M bonds (M = Ti, Zr, Hf).
Curley JJ, Bergman RG, Tilley TD.
Dalton Trans. 2012 Jan 7;41(1):192-200. Epub 2011 Oct 21.
PMID:
22020701
[PubMed - in process]
New stable aryl-substituted acyclic imino-N-heterocyclic carbene: synthesis, characterisation and coordination to early transition metals.
Larocque TG, Badaj AC, Dastgir S, Lavoie GG.
Dalton Trans. 2011 Dec 21;40(47):12705-12. Epub 2011 Oct 18.
PMID:
22006062
[PubMed - in process]
Sterically demanding hetero-substituted [2]borametallocenophanes of group IV metals: synthesis, structure and reactivity.
Braunschweig H, Dörfler R, Mies J, Oechsner A.
Chemistry. 2011 Oct 17;17(43):12101-7. doi: 10.1002/chem.201101774. Epub 2011 Sep 9.
PMID:
21905138
[PubMed]
The role of electron localization in the atomic structure of transition-metal 13-atom clusters: the example of Co13, Rh13, and Hf13.
Piotrowski MJ, Piquini P, Cândido L, Da Silva JL.
Phys Chem Chem Phys. 2011 Oct 14;13(38):17242-8. Epub 2011 Aug 30.
PMID:
21879054
[PubMed - indexed for MEDLINE]
Monte Carlo dose enhancement studies in microbeam radiation therapy.
Martínez-Rovira I, Prezadoa Y.
Med Phys. 2011 Jul;38(7):4430-9.
PMID:
21859044
[PubMed - indexed for MEDLINE]
Electronic structure characterization of La incorporated Hf-based high-k gate dielectrics by NEXAFS.
Yamamoto T, Ogawa S, Kunisu M, Tsuji J, Kita K, Saeki M, Oku Y, Arimura H, Kitano N, Hosoi T, Shimura T, Watanabe H.
J Nanosci Nanotechnol. 2011 Apr;11(4):2823-8.
PMID:
21776638
[PubMed - indexed for MEDLINE]
Oxygen-containing gas-phase diatomic trications and tetracations: ReO(z+), NbO(z+) and HfO(z+) (z=3, 4).
Brites V, Franzreb K, Harvey JN, Sayres SG, Ross MW, Blumling DE, Castleman AW Jr, Hochlaf M.
Phys Chem Chem Phys. 2011 Sep 7;13(33):15233-43. Epub 2011 Jul 15.
PMID:
21761073
[PubMed]
Tris(?-cyclo-penta-dien-yl)hafnium(III).
Burlakov VV, Arndt P, Spannenberg A, Rosenthal U.
Acta Crystallogr Sect E Struct Rep Online. 2011 May 1;67(Pt 5):m629. Epub 2011 Apr 22.
PMID:
21754338
[PubMed]
Synthesis of freestanding HfO2 nanostructures.
Kidd T, O'Shea A, Boyle K, Wallace J, Strauss L.
Nanoscale Res Lett. 2011 Apr 5;6(1):294.
PMID:
21711786
[PubMed - in process]
American Elements specializes in producing high purity uniform shaped Hafnium Oxide Pellets with the highest possible density 
and smallest possible average grain sizes for use in semiconductor, Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes including Thermal and Electron Beam (E-Beam) Evaporation, Low Temperature Organic Evaporation, Atomic Layer Deposition (ALD), Metallic-Organic and Chemical Vapor Deposition (MOCVD). Our standard Pellet sizes range from 1/8" x 1/8" to 1/4" x 1/4" and 3 mm diameter. We can also provide Pellets outside this range for ultra high purity thin film applications, such as fuel cells and solar energy layers. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles (See also application discussion at Nanotechnology Information and at Quantum Dots) and in the form of solutions and organometallics.
Hafnium is a Block D, Group 4, Period 6 element. The number of electrons in each of Hafnium's shells is 2, 8, 18, 32, 10, 2 and its electronic configuration is [Xe] 4f14 5d2 6s2. In its elemental form hafnium's CAS number is 7440-58-6.The hafnium atom has a radius of 156.4.pm and it's Van der Waals radius is 200.pm. Hafnium is not toxic. Hafnium is one of the Group IV transition elements that is refined from various zirconic mineral deposits. Hafnium is available as metal and compounds with purities from 99% to 99.999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. It's primary uses are due to its ability as a nuclear "getter" or absorber of neutrons. It is a primary component in nuclear control rods for this purpose. It also finds uses as a dopant in the alloy of 
steel and 
titanium. It is also used in the production of mantles for high intensity incandescent lamps. Hafnium is replacing polysilicon as the principle gate or electrode material in metal oxide semiconductor field effect transistors (MOSFETs) which are the basis for all modern semiconductors. As semiconductors have gotten smaller, the limiting factor in further size reduction has been the ability of the silicon oxide gate to perform below 10 angstroms where leakage occurs. Recent research has been devoted to the development of High-k materials which can function as a di-electric barrier or gate with lower leakage. Using hafnium based alloys as this di-electric gate has allowed for the development of MOSFET gates smaller than 10 angstroms. This allows for further size reduction, reduced switching power requirements and improved performance. Hafnium was first discovered by Dirk Coster in 1923. See Hafnium research below.
