Hafnium Phosphide is
a semiconductor used in high power, high frequency applications and in laser diodes.American Elements produces to many standard grades when applicable, including Mil Spec (military grade); ACS, Reagent and Technical Grade; Food, Agricultural and Pharmaceutical Grade; Optical Grade, USP and EP/BP (European Pharmacopoeia/British Pharmacopoeia)and follows applicable ASTM testing standards.Typical and custom packaging is available. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.
Hafnium is a Block D, Group 4, Period 6 element. The number of electrons in each of Hafnium's shells is 2, 8, 18, 32, 10, 2 and its electronic configuration is [Xe] 4f14 5d2 6s2. In its elemental form hafnium's CAS number is 7440-58-6.The hafnium atom has a radius of 156.4.pm and it's Van der Waals radius is 200.pm. Hafnium is not toxic. Hafnium is one of the Group IV transition elements that is refined from various zirconic mineral deposits. Hafnium is available as metal and compounds with purities from 99% to 99.999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. It's primary uses are due to its ability as a nuclear "getter" or absorber of neutrons. It is a primary component in nuclear control rods for this purpose. It also finds uses as a dopant in the alloy of steel and titanium. It is also used in the production of mantles for high intensity incandescent lamps. Hafnium is replacing polysilicon as the principle gate or electrode material in metaloxide semiconductor field effect transistors (MOSFETs) which are the basis for all modern semiconductors. As semiconductors have gotten smaller, the limiting factor in further size reduction has been the ability of the silicon oxide gate to perform below 10 angstroms where leakage occurs. Recent research has been devoted to the development of High-k materials which can function as a di-electric barrier or gate with lower leakage. Using hafnium based alloys as this di-electric gate has allowed for the development of MOSFET gates smaller than 10 angstroms. This allows for further size reduction, reduced switching power requirements and improved performance. Hafnium was first discovered by Dirk Coster in 1923. See Hafnium research below.
Phosphorus is a Block P, Group 15, Period 3 element. The number of electrons in each of Phosphorus's shells is 2, 8, 5 and its electronic configuration is [Ne] 3s2 3p3. In its elemental form Phosphorus's CAS number is 7723-14-0. The Phosphorus atom has a radius of 110.5.pm and it's Van der Waals radius is 180.pm. Although white phosphorus is very toxic, red phosphorus is not considered toxic. Phosphorus information, including Technical Data, Safety Data and its High Purity properties, research, applications and other useful facts are discussed below. Scientific facts such as the atomic structure, ionization energy, abundance on Earth, conductivity and thermal properties are included.
American Elements semi conducting materials are crystal structures produced from ultra high purity starting materials synthesized by our high purity production facility which includes several large electric muffle furnaces, a tube furnace for hydrogen reduction, 50 gallon glass-lined Pfaudler reactors supported by our analytical laboratory containing X-ray diffraction, SEM, AA, BET surface area, and ICP Spectrometry for trace metals analysis. See a discussion of American Elements Ultra High Purity and Analytical capabilities. See Crystal Growth for processes used to fabricate semiconductor materials, which include:
Crystal "pulling" by the Czochaiski method for production of semiconductor materials
Flux growth and gradient freeze
Directional solidification of fluorites using both the Bridgman-Stockbarger and float zoning techniques
Fluorescence Signaling of Zr(4+) by Hydrogen Peroxide Assisted Selective Desulfurization of Thioamide.
Hwang J, Choi MG, Eor S, Chang SK.
Inorg Chem. 2012 Jan 19. [Epub ahead of print]
PMID:
22260347
[PubMed - as supplied by publisher]
Hafnium metallocene compounds used as cathode interfacial layers for enhanced electron transfer in organic solar cells.
Park K, Oh S, Jung D, Chae H, Kim H, Boo JH.
Nanoscale Res Lett. 2012 Jan 9;7(1):74. [Epub ahead of print]
PMID:
22230259
[PubMed - as supplied by publisher]
Synthesis of hafnium oxide-gold core-shell nanoparticles.
Dahal N, Chikan V.
Inorg Chem. 2012 Jan 2;51(1):518-22. Epub 2011 Dec 16.
PMID:
22221284
[PubMed - in process]
Di-?-hydroxido-bis-[tris-(4,4,4-trifluoro-1-phenyl-acetyl-acetonato-?O,O')hafnium(IV)] dimethyl-formamide disolvate.
Viljoen JA, Visser HG, Roodt A.
Acta Crystallogr Sect E Struct Rep Online. 2011 Dec 1;67(Pt 12):m1822-3. Epub 2011 Nov 25.
PMID:
22199601
[PubMed - in process]
Potential of high-Z contrast agents in clinical contrast-enhanced computed tomography.
Nowak T, Hupfer M, Brauweiler R, Eisa F, Kalender WA.
Med Phys. 2011 Dec;38(12):6469.
PMID:
22149830
[PubMed - in process]
Ni ion release, osteoblast-material interactions, and hemocompatibility of hafnium-implanted NiTi alloy.
Zhao T, Li Y, Zhao X, Chen H, Zhang T.
J Biomed Mater Res B Appl Biomater. 2011 Nov 28. doi: 10.1002/jbm.b.31989. [Epub ahead of print]
PMID:
22121018
[PubMed - as supplied by publisher]
Electrochemical oxide nanotube formation on the Ti-35Ta-xHf alloys for dental materials.
Moon BH, Jeong YH, Choe HC.
J Nanosci Nanotechnol. 2011 Aug;11(8):7428-32.
PMID:
22103212
[PubMed - indexed for MEDLINE]
Environmentally stable flexible metal-insulator-metal capacitors using zirconium-silicate and hafnium-silicate thin film composite materials as gate dielectrics.
Meena JS, Chu MC, Wu CS, Ravipati S, Ko FH.
J Nanosci Nanotechnol. 2011 Aug;11(8):6858-67.
PMID:
22103091
[PubMed]
In situ gas phase measurements during metal alkylamide atomic layer deposition.
Maslar JE, Kimes WA, Sperling BA.
J Nanosci Nanotechnol. 2011 Sep;11(9):8226-32.
PMID:
22097559
[PubMed]
Tetra-kis(5,7-dimethyl-quinolin-8-olato-?N,O)hafnium(IV) dimethyl-formamide disolvate.
Viljoen JA, Visser HG, Roodt A.
Acta Crystallogr Sect E Struct Rep Online. 2011 Oct 1;67(Pt 10):m1428-9. Epub 2011 Sep 30.
PMID:
22058710
[PubMed]
Synthesis, characterization, and materials chemistry of Group 4 silylimides.
Cosham SD, Johnson AL, Molloy KC, Kingsley AJ.
Inorg Chem. 2011 Dec 5;50(23):12053-63. Epub 2011 Nov 4.
PMID:
22053704
[PubMed - in process]
Preparation and physical properties of early-late heterobimetallic compounds featuring Ir-M bonds (M = Ti, Zr, Hf).
Curley JJ, Bergman RG, Tilley TD.
Dalton Trans. 2012 Jan 7;41(1):192-200. Epub 2011 Oct 21.
PMID:
22020701
[PubMed - in process]
New stable aryl-substituted acyclic imino-N-heterocyclic carbene: synthesis, characterisation and coordination to early transition metals.
Larocque TG, Badaj AC, Dastgir S, Lavoie GG.
Dalton Trans. 2011 Dec 21;40(47):12705-12. Epub 2011 Oct 18.
PMID:
22006062
[PubMed - in process]
Sterically demanding hetero-substituted [2]borametallocenophanes of group IV metals: synthesis, structure and reactivity.
Braunschweig H, Dörfler R, Mies J, Oechsner A.
Chemistry. 2011 Oct 17;17(43):12101-7. doi: 10.1002/chem.201101774. Epub 2011 Sep 9.
PMID:
21905138
[PubMed]
The role of electron localization in the atomic structure of transition-metal 13-atom clusters: the example of Co13, Rh13, and Hf13.
Piotrowski MJ, Piquini P, Cândido L, Da Silva JL.
Phys Chem Chem Phys. 2011 Oct 14;13(38):17242-8. Epub 2011 Aug 30.
PMID:
21879054
[PubMed - indexed for MEDLINE]
Monte Carlo dose enhancement studies in microbeam radiation therapy.
Martínez-Rovira I, Prezadoa Y.
Med Phys. 2011 Jul;38(7):4430-9.
PMID:
21859044
[PubMed - indexed for MEDLINE]
Electronic structure characterization of La incorporated Hf-based high-k gate dielectrics by NEXAFS.
Yamamoto T, Ogawa S, Kunisu M, Tsuji J, Kita K, Saeki M, Oku Y, Arimura H, Kitano N, Hosoi T, Shimura T, Watanabe H.
J Nanosci Nanotechnol. 2011 Apr;11(4):2823-8.
PMID:
21776638
[PubMed - indexed for MEDLINE]
Oxygen-containing gas-phase diatomic trications and tetracations: ReO(z+), NbO(z+) and HfO(z+) (z=3, 4).
Brites V, Franzreb K, Harvey JN, Sayres SG, Ross MW, Blumling DE, Castleman AW Jr, Hochlaf M.
Phys Chem Chem Phys. 2011 Sep 7;13(33):15233-43. Epub 2011 Jul 15.
PMID:
21761073
[PubMed]
Tris(?-cyclo-penta-dien-yl)hafnium(III).
Burlakov VV, Arndt P, Spannenberg A, Rosenthal U.
Acta Crystallogr Sect E Struct Rep Online. 2011 May 1;67(Pt 5):m629. Epub 2011 Apr 22.
PMID:
21754338
[PubMed]
Synthesis of freestanding HfO2 nanostructures.
Kidd T, O'Shea A, Boyle K, Wallace J, Strauss L.
Nanoscale Res Lett. 2011 Apr 5;6(1):294.
PMID:
21711786
[PubMed - in process]
Recent Research & Development for Hafnium
N(2) Activation by a Hafnium Complex: A DFT
Study on CO-Assisted Dinitrogen Cleavage and Functionalization. Zhang X, Butschke B, Schwarz H. Chemistry. 2010
Sep 28. [Epub ahead of print] PubMed PMID: 20878807.
Effective enrichment and mass spectrometry analysis of phosphopeptides using
mesoporous metal oxide nanomaterials. Nelson CA, Szczech JR, Dooley CJ, Xu Q, Lawrence MJ, Zhu H, Jin S, Ge Y. Anal Chem. 2010 Sep 1;82(17):7193-201.
PubMed PMID: 20704311; PubMed Central PMCID: PMC2936271.
Synthesis, characterization and
biological study on Cr(3+), ZrO(2+), HfO(2+) and UO(2)(2+) complexes of
oxalohydrazide and bis(3-hydroxyimino)butan-2-ylidene)-oxalohydrazide.
El-Asmy AA, El-Gammal OA, Radwan HA. Spectrochim Acta A Mol Biomol Spectrosc. 2010 Sep 1;76(5):496-501. Epub 2010 Apr
21. PubMed PMID: 20451440.
Intramolecular
sigma-bond metathesis/protonolysis on zirconium(IV) and hafnium(IV) pyridylamido
olefin polymerization catalyst precursors: exploring unexpected reactivity paths.
Luconi L, Giambastiani G, Rossin A, Bianchini C, Lledós A. Inorg Chem. 2010 Aug 2;49(15):6811-3. PubMed PMID: 20583749.
Guided-mode resonant wave plates.
Magnusson R, Shokooh-Saremi M, Johnson EG. Opt Lett. 2010 Jul 15;35(14):2472-4. doi: 10.1364/OL.35.002472. PubMed PMID:
20634867.
Initiation of a
passivated interface between hafnium oxide and In(Ga)As(0 0 1)-(4x2). Clemens JB, Bishop SR, Lee JS, Kummel AC, Droopad R. J Chem
Phys. 2010 Jun 28;132(24):244701. PubMed PMID: 20590208.
Zirconium(IV)- and hafnium(IV)-catalyzed highly
enantioselective epoxidation of homoallylic and bishomoallylic alcohols. Li Z, Yamamoto H. J Am
Chem Soc. 2010 Jun 16;132(23):7878-80. PubMed PMID: 20481541; PubMed Central
PMCID: PMC2886809.
Combined U-Pb and Lu-Hf isotope
analyses by laser ablation MC-ICP-MS: methodology and applications. Matteini M, Dantas EL, Pimentel MM, Bühn B. An Acad Bras
Cienc. 2010 Jun;82(2):479-91. PubMed PMID: 20563428.
Preparation and structures of
enantiomeric dinuclear zirconium and hafnium complexes containing two homochiral
N atoms, and their catalytic property for polymerization of rac-lactide. Hu M, Wang M, Zhu H, Zhang L, Zhang H, Sun L. Dalton
Trans. 2010 May 14;39(18):4440-6. Epub 2010 Mar 31. PubMed PMID: 20358041.
Effect of deposition temperature on the
characteristics of HfN(x) thin films prepared by plasma assisted cyclic chemical
vapor deposition. Kim EJ, Woo HG, Kim DH. J Nanosci Nanotechnol. 2010 May;10(5):3463-6. PubMed PMID:
20358979.
A younger age for ALH84001 and its geochemical link to shergottite sources in
Mars. Lapen TJ, Righter M, Brandon AD, Debaille V, Beard BL, Shafer JT, Peslier AH. Science. 2010 Apr 16;328(5976):347-51. PubMed PMID: 20395507.
Improved reliability from a
plasma-assisted metal-insulator-metal capacitor comprising a high-k HfO2 film on
a flexible polyimide substrate. Meena JS, Chu MC, Kuo SW, Chang FC, Ko FH. Phys Chem Chem Phys. 2010 Mar 20;12(11):2582-9.
Epub 2010 Jan 26. PubMed PMID: 20200734.
Optical coatings in microscale channels by atomic
layer deposition. Gabriel NT, Talghader JJ. Appl Opt. 2010 Mar 10;49(8):1242-8. doi: 10.1364/AO.49.001242.
PubMed PMID: 20220879.
Effect of
TiF4, ZrF4, HfF4 and AmF on erosion and erosion/abrasion of enamel and dentin in
situ. Wiegand A, Hiestand B, Sener B, Magalhães AC, Roos M, Attin T. Arch Oral Biol. 2010 Mar;55(3):223-8. Epub 2010 Jan 18. PubMed PMID:
20083245.
Hydrolysis of
bis(p-nitrophenyl)phosphate by tetravalent metal complexes with Klaui's oxygen
tripodal ligand. Yi XY, Lam TC, Williams ID, Leung WH. Inorg Chem. 2010 Mar 1;49(5):2232-8. PubMed PMID: 20131806.
Synthesis of nested coaxial
multiple-walled nanotubes by atomic layer deposition. Gu D, Baumgart H, Abdel-Fattah TM, Namkoong G. ACS Nano. 2010 Feb
23;4(2):753-8. Erratum in: ACS Nano. 2010 Jul 27;4(7):4331. PubMed PMID:
20085347.
Synthesis and characterisation of ionic liquids based on
1-butyl-3-methylimidazolium chloride and MCl(4), M = Hf and Zr. Campbell PS, Santini CC, Bouchu D, Fenet B, Rycerz L, Chauvin Y, Gaune-Escard
M, Bessada C, Rollet AL. Dalton Trans.
2010 Feb 7;39(5):1379-88. Epub 2009 Dec 1. PubMed PMID: 20104366.
Dielectric
surface-controlled low-voltage organic transistors via n-alkyl phosphonic acid
self-assembled monolayers on high-k metal oxide. Acton BO, Ting GG, Shamberger PJ, Ohuchi FS, Ma H, Jen AK. ACS Appl Mater Interfaces. 2010
Feb;2(2):511-20. PubMed PMID: 20356199.
In situ reaction
mechanism studies on ozone-based atomic layer deposition of Al(2)O(3) and HfO(2). Rose M, Niinistö J, Endler I, Bartha JW, Kücher P, Ritala M.
ACS Appl Mater Interfaces. 2010 Feb;2(2):347-50. PubMed PMID: 20356179.
Is titanium tetrafluoride (TiF4) effective
to prevent carious and erosive lesions? A review of the literature. Wiegand A, Magalhães AC, Attin T. Oral Health
Prev Dent. 2010;8(2):159-64. Review. PubMed PMID: 20589250.
Hafnium Phosphide is
a semiconductor used in high power, high frequency applications and in laser diodes.American Elements produces to many standard grades when applicable, including Mil Spec (military grade); ACS, Reagent and Technical Grade; Food, Agricultural and Pharmaceutical Grade; Optical Grade, USP and EP/BP (European Pharmacopoeia/British Pharmacopoeia)and follows applicable ASTM testing standards.Typical and custom packaging is available. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.
Hafnium is a Block D, Group 4, Period 6 element. The number of electrons in each of Hafnium's shells is 2, 8, 18, 32, 10, 2 and its electronic configuration is [Xe] 4f14 5d2 6s2. In its elemental form hafnium's CAS number is 7440-58-6.The hafnium atom has a radius of 156.4.pm and it's Van der Waals radius is 200.pm. Hafnium is not toxic. Hafnium is one of the Group IV transition elements that is refined from various zirconic mineral deposits. Hafnium is available as metal and compounds with purities from 99% to 99.999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. It's primary uses are due to its ability as a nuclear "getter" or absorber of neutrons. It is a primary component in nuclear control rods for this purpose. It also finds uses as a dopant in the alloy of 
steel and 
titanium. It is also used in the production of mantles for high intensity incandescent lamps. Hafnium is replacing polysilicon as the principle gate or electrode material in metal oxide semiconductor field effect transistors (MOSFETs) which are the basis for all modern semiconductors. As semiconductors have gotten smaller, the limiting factor in further size reduction has been the ability of the silicon oxide gate to perform below 10 angstroms where leakage occurs. Recent research has been devoted to the development of High-k materials which can function as a di-electric barrier or gate with lower leakage. Using hafnium based alloys as this di-electric gate has allowed for the development of MOSFET gates smaller than 10 angstroms. This allows for further size reduction, reduced switching power requirements and improved performance. Hafnium was first discovered by Dirk Coster in 1923. See Hafnium research below. 
Phosphorus is a Block P, Group 15, Period 3 element. The number of electrons in each of Phosphorus's shells is 2, 8, 5 and its electronic configuration is [Ne] 3s2 3p3. In its elemental form Phosphorus's CAS number is 7723-14-0. The Phosphorus atom has a radius of 110.5.pm and it's Van der Waals radius is 180.pm. Although white phosphorus is very toxic, red phosphorus is not considered toxic. Phosphorus information, including Technical Data, Safety Data and its High Purity properties, research, applications and other useful facts are discussed below. Scientific facts such as the atomic structure, ionization energy, abundance on Earth, conductivity and thermal properties are included.
