American Elements: Hafnium Sulfate Supplier & Tech Info

Hafnium Sulfate is a moderately water and acid soluble Hafnium source for uses compatible with sulfates. Sulfate compounds are salts or esters of sulfuric acid formed by replacing one or both of the hydrogens with a metal. Most metal sulfate compounds are readily soluble in water for uses such as water treatment, unlike fluorides and oxides which tend to be insoluble. Organometallic forms are soluble in organic solutions and sometimes in both aqueous and organic solutions. Metallic ions can also be dispersed utilizing suspended or coated nanoparticles (See also application discussion at Nanotechnology Information and at Quantum Dots) and deposited utilizing sputtering targets and evaporation materials for uses such as solar energy materials and fuel cells.

Hafnium Sulfate is generally immediately available in most volumes. Ultra high purity and high purity compositions improve both optical quality and usefulness as scientific standards. Nanoscale (See also Nanotechnology Information and Quantum Dots) elemental powders and suspensions, as alternative high surface area forms, may be considered. We also produce Hafnium Sulfate Solution. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.

Hafnium is a Block D, Group 4, Period 6 element. The electronic configuration is [Xe] 4f¹⁴ 5d² 6s². In its elemental form hafnium's CAS number is 7440-58-6. The hafnium atom has a radius of 156.4.pm and it's Van der Waals radius is 200.pm. Hafnium is one of the Group IV transition elements that is refined from various zirconic mineral deposits. Hafnium is available as metal and compounds with purities from 99% to 99.999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. It's primary uses are due to its ability as a nuclear "getter" or absorber of neutrons. It is a primary component in nuclear control rods for this purpose. It also finds uses as a dopant in the alloy of steel and titanium. It is also used in the production of mantles for high intensity incandescent lamps. Hafnium is replacing polysilicon as the principle gate or electrode material in metal oxide semiconductor field effect transistors (MOSFETs) which are the basis for all modern semiconductors. As semiconductors have gotten smaller, the limiting factor in further size reduction has been the ability of the silicon oxide gate to perform below 10 angstroms where leakage occurs. Recent research has been devoted to the development of High-k materials which can function as a di-electric barrier or gate with lower leakage. Using hafnium based alloys as this di-electric gate has allowed for the development of MOSFET gates smaller than 10 angstroms. This allows for further size reduction, reduced switching power requirements and improved performance.