Indium Oxide Particles

High Purity In2O3
CAS 1312-43-3

Product Product Code Order or Specifications
(2N) 99% Indium Oxide Particles IN-OX-02-PTCS Contact American Elements
(3N) 99.9% Indium Oxide Particles IN-OX-03-PTCS Contact American Elements
(4N) 99.99% Indium Oxide Particles IN-OX-04-PTCS Contact American Elements
(5N) 99.999% Indium Oxide Particles IN-OX-05-PTCS Contact American Elements

Formula CAS No. PubChem SID PubChem CID MDL No. EC No IUPAC Name Beilstein
Re. No.
In2O3 1312-43-3 24852170 5150906 MFCD00011060 215-193-9 Oxo-
  [O-2].[O-2].[O-2].[In+3].[In+3] InChI=1S/2In.3O/q2*+3;3*-2 PJXISJQVUVHSOJ-UHFFFAOYSA-N

PROPERTIES Compound Formula Mol. Wt. Appearance Melting Point Boiling Point Density

Exact Mass

Monoisotopic Mass Charge MSDS
In2O3 277.64 Yellow Powder 1,910° C
(3,470° F)
N/A 7.18 g/cm3 277.793 g/mol 277.793 Da 0 Safety Data Sheet

Oxide IonAmerican Elements specializes in producing high purity Indium Oxide Particles with the smallest possible average grain sizes for use in preparation of pressed and bonded sputtering targets and in Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes including Thermal and Electron Beam (E-Beam) Evaporation, Low Temperature Organic Evaporation, Atomic Layer Deposition (ALD), Metallic-Organic and Chemical Vapor Deposition (MOCVD). Metal particle powders are used in a variety of applications including, additives in paint and other coatings, in solid fuels and cements, as pigments in printing and packaging and dietary supplements in food processing. Current trends in particle usage or in development include commercialization of technologies such as rapid solidification and metal injection molding and production of dense powder metallurgy products.Indium Oxide Particles are also available as Nanoparticles (See also Nanotechnology Information and Quantum Dots). Our standard Powder particle sizes average in the range of - 325 mesh, - 100 mesh, 10-50 microns and submicron (< 1 micron). We can also provide many materials in the nanoscale range. See research below. We also produce Indium Oxide as pellets, pieces, tablets, and sputtering target. Oxide compounds are not conductive to electricity. However, certain perovskite structured oxides are electronically conductive finding application in the cathode of solid oxide fuel cells and oxygen generation systems. See research below. Other shapes are available by request.

Indium (In) atomic and molecular weight, atomic number and elemental symbolIndium (atomic symbol: In, atomic number: 49) is a Block P, Group 13, Period 5 element with an atomic weight of 114.818. The number of electrons in each of indium's shells is [2, 8, 18, 18, 3] and its electron configuration is [Kr] 4d10 5s2 5p1. The indium atom has a radius of 162.6 pm and a Van der Waals radius of 193 pm. Indium was discovered by Ferdinand Reich and Hieronymous Theodor Richter in 1863. Indium Bohr Model It is a relatively rare, extremely soft metal is a lustrous silvery Elemental Indium gray and is both malleable and easily fusible. It has similar chemical properties to gallium such as a low melting point and the ability to wet glass. Fields such as optics and microelectronics that utilize semiconductor technology have wide uses for indium, especially in the form of Indiun Tin Oxide (ITO). Thin films of Copper Indium Gallium Selenide (CIGS) are used in high-performing solar cells. Indium's name is derived from the Latin word indicum meaning violet. For more information on indium, including properties, safety data, research, and American Elements' catalog of indium products, visit the Indium Information Center.

Exclamation Mark-Acute Toxicity        

Indium (3+) oxide, India, Indium trioxide, Indium sesquioxide, Indium(III) oxide, Oxo-oxoindianyloxyindigane, Indium(3+); oxygen(2-), Diindium trioxide

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Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.

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Production Catalog Available in 36 Countries & Languages

Recent Research & Development for Indium

  • Ho Young Chung, Kie Young Woo, Su Jin Kim, Tae Geun Kim, Improvement of blue InGaN/GaN light-emitting diodes with graded indium composition wells and barriers, Optics Communications, Volume 331, 15 November 2014
  • Raju Chetty, D.S. Prem Kumar, M. Falmbigl, P. Rogl, S.-W. You, Il-Ho Kim, Ramesh Chandra Mallik, Thermoelectric properties of Indium doped Cu2GeSe3, Intermetallics, Volume 54, November 2014
  • Xingwei Ding, Jianhua Zhang, Weimin Shi, Hao Zhang, Chuanxin Huang, Jun Li, Xueyin Jiang, Zhilin Zhang, Characterization of density-of-states in indium zinc oxide thin-film transistor from temperature stress studies, Materials Science in Semiconductor Processing, Volume 27, November 2014
  • Atasheh Soleimani-Gorgani, Ehsan Bakhshandeh, Farhood Najafi, Effect of dispersant agents on morphology and optical–electrical properties of nano indium tin oxide ink-jet ink, Journal of the European Ceramic Society, Volume 34, Issue 12, October 2014
  • Shihyun Ahn, Anh Huy Tuan Le, Sunbo Kim, Cheolmin Park, Chonghoon Shin, Youn-Jung Lee, Jaehyeong Lee, Chaehwan Jeong, Vinh Ai Dao, Junsin Yi, The effects of orientation changes in indium tin oxide films on performance of crystalline silicon solar cell with shallow-emitter, Materials Letters, Volume 132, 1 October 2014
  • L. Castañeda, A. Maldonado, J. Vega Pérez, M. de la L. Olvera, C. Torres-Torres, Electrical and optical properties of nanostructured indium doped zinc oxide thin films deposited by ultrasonic chemical spray technique, starting from zinc acetylacetonate and indium chloride, Materials Science in Semiconductor Processing, Volume 26, October 2014
  • Zhou Xu, Peng Chen, Zhenlong Wu, Feng Xu, Guofeng Yang, Bin Liu, Chongbin Tan, Lin Zhang, Rong Zhang, Youdou Zheng, Influence of thermal annealing on electrical and optical properties of indium tin oxide thin films, Materials Science in Semiconductor Processing, Volume 26, October 2014
  • Anil Singh, Sujeet Chaudhary, Dinesh K. Pandya, On the temperature dependence of mobility in hydrogenated indium-doped ZnO thin films, Acta Materialia, Volume 77, 15 September 2014
  • G. Mohan Kumar, Jinsub Park, Structural and optical property studies on indium doped ZnO nanostructures for solution based organic–inorganic hybrid p–n junctions, Journal of Colloid and Interface Science, Volume 430, 15 September 2014
  • Ummar Pasha Shaik, M. Ghanashyam Krishna, Single step formation of indium and tin doped ZnO nanowires by thermal oxidation of indium–zinc and tin–zinc metal films: Growth and optical properties, Ceramics International, Volume 40, Issue 8, Part B, September 2014
  • J.J. Ortega, M.A. Aguilar-Frutis, G. Alarcón, C. Falcony, V.H. Méndez-García, J.J. Araiza, Band gap engineering of indium zinc oxide by nitrogen incorporation, Materials Science and Engineering: B, Volume 187, September 2014
  • Wyatt H. Strong, David V. Forbes, Seth M. Hubbard, Investigation of deep level defects in electron irradiated indium arsenide quantum dots embedded in a gallium arsenide matrix, Materials Science in Semiconductor Processing, Volume 25, September 2014
  • Ali A. Orouji, Mohammad Nejaty, Alireza Mohtasham, Novel Indium Arsenide double gate and gate all around nanowire MOSFETs for diminishing the exchange correlation effect: A quantum study, Physica E: Low-dimensional Systems and Nanostructures, Volume 63, September 2014
  • Bobins Augustine, Rafal Sliz, Kimmo Lahtonen, Mika Valden, Risto Myllylä, Tapio Fabritius, Effect of plasma treated Ag/indium tin oxide anode modification on stability of polymer solar cells, Solar Energy Materials and Solar Cells, Volume 128, September 2014
  • N.B. Pawar, S.D. Kharade, S.S. Mali, R.M. Mane, C.K. Hong, P.S. Patil, P.N. Bhosale, Effect of indium (III) content on photoelectrochemical performance of MoBi(2-x)InxS5 thin films, Solid State Sciences, Volume 35, September 2014
  • Ying-Feng Lan, Ying-Hung Chen, Ju-Liang He, Jing-Tang Chang, Microstructural characterization of high-quality indium tin oxide films deposited by thermionically enhanced magnetron sputtering at low temperature, Vacuum, Volume 107, September 2014
  • Siti Zulaikha Ngah Demon, Yoshihiro Miyauchi, Goro Mizutani, Toshinori Matsushima, Hideyuki Murata, Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide, Applied Surface Science, Volume 311, 30 August 2014
  • Udo Steiner, Phase relations and chemical vapor transport of hexagonal indium tungsten bronze InxWO3, Journal of Alloys and Compounds, Volume 605, 25 August 2014
  • Erkan Aydin, Mehmet Sankir, Nurdan Demirci Sankir, Influence of silver incorporation on the structural, optical and electrical properties of spray pyrolyzed indium sulfide thin films, Journal of Alloys and Compounds, Volume 603, 5 August 2014
  • P.D. Szkutnik, H. Roussel, V. Lahootun, X. Mescot, F. Weiss, C. Jiménez, Study of the functional properties of ITO grown by metalorganic chemical vapor deposition from different indium and tin precursors, Journal of Alloys and Compounds, Volume 603, 5 August 2014