Indium Tin Oxide
High Purity In2O3·SnO2

Indium Tin Oxide is generally immediately available in most volumes. High purity, submicron and nanopowder forms may be considered. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.

Indium is a Block P, Group 13, Period 5 element. The electronic configuration is [Kr] 4d¹⁰ 5s² 5p¹. In its elemental form indium's CAS number is 7440-74-6. The indium atom has a radius of 162.6.pm and it's Van der Waals radius is 193.pm. Indium has found application in semi-conductor materials and other electronic applications. It is used to make low-melting alloys, such as an alloy of 24% indium - 76% Indium is liquid at room temperature. It is used in making bearing alloys, germanium transistors, rectifiers, and photoconductors. It can be plated onto metal and evaporated onto glass, forming a mirror as good as that made with silver but with more resistance to atmospheric corrosion.

American Elements semi conducting materials are crystal structures produced from ultra high purity starting materials synthesized by our high purity production facility which includes several large electric muffle furnaces, a tube furnace for hydrogen reduction, 50 gallon glass-lined Pfaudler reactors supported by our analytical laboratory containing X-ray diffraction, SEM, AA, BET surface area, and ICP Spectrometry for trace metals analysis. See a discussion of American Elements Ultra High Purity and Analytical capabilities. See Crystal Growth for processes used to fabricate semiconductor materials, which include:

• Crystal "pulling" by the Czochaiski method for production of semiconductor materials
• Flux growth and gradient freeze
• Directional solidification of fluorites using both the Bridgman-Stockbarger and float zoning techniques