American Elements: Indium Tin Oxide Supplier & Tech Info

ITO (Indium Tin Oxide) is generally immediately available in most volumes. High purity, submicron and nanopowder forms may be considered.American Elements produces to many standard grades when applicable, including Mil Spec (military grade); ACS, Reagent and Technical Grade; Food, Agricultural and Pharmaceutical Grade; Optical Grade, USP and EP/BP (European Pharmacopoeia/British Pharmacopoeia)and follows applicable ASTM testing standards.Typical and custom packaging is available. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.

Indium is a Block P, Group 13, Period 5 element. The number of electrons in each of Indium's shells is 2, 8, 18, 18, 3 and its electronic configuration is [Kr] 4d¹⁰ 5s² 5p¹. In its elemental form indium's CAS number is 7440-74-6. The indium atom has a radius of 162.6.pm and it's Van der Waals radius is 193.pm. Indium is only slightly toxic. Indium has found application in semi-conductor materials and other electronic applications. It is used to make low-melting alloys, such as an alloy of 24% indium - 76% Indium is liquid at room temperature. It is used in making bearing alloys, germanium transistors, rectifiers, and photoconductors. It can be plated onto metal and evaporated onto glass, forming a mirror as good as that made with silver but with more resistance to atmospheric corrosion. Indium is available as metal and compounds with purities from 99% to 99.9999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. Indium is also used in various metal alloys (See AE Alloys). Indium was first discovered by Ferdinand Reich in 1863. See Indium research below.

Tin is a Block P, Group 14, Period 5 element. The number of electrons in each of Tin's shells is 2, 8, 18, 18, 4 and its electronic configuration is [Kr] 4d¹⁰ 5s² 5p². In its elemental form tin's CAS number is 7440-31-5. The tin atom has a radius of 140.5.pm and it's Van der Waals radius is 217.pm. Organometallic compounds of tin are very toxic and tin salts are also considered to be toxic. Tin as single atoms or molecules are not toxic. Tin compounds sprayed onto glass are used to produce electrically conductive coatings. These have been used for panel lighting and for frost-free windshields. Most window glass is now made by floating molten glass on molten tin (float glass) to produce a flat surface. Crystalline tin-niobium alloy is superconductive at very low temperatures. This promises to be important in the construction of superconductive magnets that generate enormous field strengths but use practically no power. Tin is the basis for many eutectic alloys and the discovery by early man that copper could be better formed and crafted if tin were added producing the first bronze and launching what we refer to as the "Bronze Age" and the first Neolithic metal tools, cooking utensils, and jewelry produced from rudimentary bronze. An important tin compound is the chloride, which is used as a reducing agent and as a mordant in calico printing. Tin is also used in various metal alloys (See AE Alloys). Tin was first discovered by Early Man.The origin of the word tin comes from the Latin word Stannum which translates to the Anglo-Saxon word tin. See Tin research below.

American Elements semi conducting materials are crystal structures produced from ultra high purity starting materials synthesized by our high purity production facility which includes several large electric muffle furnaces, a tube furnace for hydrogen reduction, 50 gallon glass-lined Pfaudler reactors supported by our analytical laboratory containing X-ray diffraction, SEM, AA, BET surface area, and ICP Spectrometry for trace metals analysis. See a discussion of American Elements Ultra High Purity and Analytical capabilities. See Crystal Growth for processes used to fabricate semiconductor materials, which include:

Crystal "pulling" by the Czochaiski method for production of semiconductor materials

Flux growth and gradient freeze

Directional solidification of fluorites using both the Bridgman-Stockbarger and float zoning techniques

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ITO (Indium Tin Oxide) High Purity In2O3·SnO2

ITO (Indium Tin Oxide)
High Purity In2O3·SnO2