| Product | Product Code |
Order or Specifications |
99% LiGaO2 |
LI-GAO-02-C
|
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99.9% LiGaO2 |
LI-GAO-03-C
|
|
99.99% LiGaO2 |
LI-GAO-04-C
|
|
99.999% LiGaO2 |
LI-GAO-05-C
|
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LiGaO2 is a crystalline solid used as a semiconductor and in photo optic applications. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.
Lanthanum is a Block F, Group 3, Period 6 element. The electronic configuration is [Xe] 5d1 6s2. In its elemental form lanthanum 's CAS number is 7439-91-0. The lanthanum atom has a radius of 187.pm and it's Van der Waals radius is 200.pm. Lanthanum is one of the products manufactured and distributed under the tradename AE Rare Earths.
Gallium is a Block P, Group 13, Period 4 element. The electronic configuration is [Ar] 3d10 4s2 4p1. In its elemental form gallium's CAS number is 7440-55-3. The gallium atom has a radius of 122.1.pm and it's Van der Waals radius is 187.pm. Gallium is one of three elements that naturally occur as a liquid at room temperature. The other two are mercury and cesium. The application of gallium that has received the most attention is the production of semiconducting compounds. Of these, the most important are the compounds of gallium with antimony, arsenic or phosphor. Nowadays gallium arsenide (Ga-As) is undoubtedly the most used. This compound is used in the production of several electronic parts such as diodes and transistors, made for voltage rectification, signal amplification, etc. Other gallium arsenide applications are the semiconductor "lasing" and microwave generation and also in sensors to measure temperature, light or magnetic field. American Elements semi conducting materials are crystal structures produced from ultra high purity starting materials synthesized by our high purity production facility which includes several large electric muffle furnaces, a tube furnace for hydrogen reduction, 50 gallon glass-lined Pfaudler reactors supported by our analytical laboratory containing X-ray diffraction, SEM, AA, BET surface area, and ICP Spectrometry for trace metals analysis. See a discussion of American Elements Ultra High Purity and Analytical capabilities. See Crystal Growth for processes used to fabricate semiconductor materials, which include:
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Crystal "pulling" by the Czochaiski method for production of semiconductor materials
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Flux growth and gradient freeze
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Directional solidification of fluorites using both the Bridgman-Stockbarger and float zoning techniques
| PRODUCT CATALOG | Submicron & Nanopowder | Tolling | Ultra High Purity | Sputtering Target | Crystal Growth | Rod, Plate, Powder, etc. |
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the copyrighted proprietary rights and intellectual property of American Elements.
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Recent Research & Development for Lithium
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