Neodymium Phosphide is
a semiconductor used in high power, high frequency applications and in laser diodes. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.
Neodymium is a Block F, Group 3, Period 6 element. The electronic configuration is [Xe]4f46s2. In its elemental form neodymium's CAS number is 7440-00-8. The neodymium atom has a radius of 181.4.pm and it's Van der Waals radius is 181.pm. Neodymium is the most abundant of the rare earths after cerium and lanthanum. Neodymium is available as metal and compounds with purities from 99% to 99.999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. Primary applications include lasers, glass coloring and tinting, dielectrics and, most importantly, as the fundamental basis for neodymium-iron-boron permanent magnets. Neodymium has a strong absorption band centered at 580 nm, which is very close to the human eye's maximum level of sensitivity making it useful in protective lenses for welding goggles. It is also used in CRT displays to enhance contrast between reds and greens and highly valued in glass manufacturing for its attractive purple coloring. Neodymium is included in many formulations of barium titanate, used as dielectric coatings and in multi-layer capacitors essential to electronic equipment.
Phosphorus is a Block P, Group 15, Period 3 element. The electronic configuration is [Ne] 3s2 3p3. In its elemental form Phosphorus's CAS number is 7723-14-0. The Phosphorus atom has a radius of 110.5.pm and it's Van der Waals radius is 180.pm.
American Elements semi conducting materials are crystal structures produced from ultra high purity starting materials synthesized by our high purity production facility which includes several large electric muffle furnaces, a tube furnace for hydrogen reduction, 50 gallon glass-lined Pfaudler reactors supported by our analytical laboratory containing X-ray diffraction, SEM, AA, BET surface area, and ICP Spectrometry for trace metals analysis. See a discussion of American Elements Ultra High Purity and Analytical capabilities. See Crystal Growth for processes used to fabricate semiconductor materials, which include:
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Crystal "pulling" by the Czochaiski method for production of semiconductor materials
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Flux growth and gradient freeze
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Directional solidification of fluorites using both the Bridgman-Stockbarger and float zoning techniques