American Elements: Silicon Arsenide Supplier & Tech Info

Silicon-Arsenide is a semiconductor and is used in the production of semiconductors as a substitute for direct arsenic usage. Additional technical, research and safety (MSDS) information is available.

Silicon is a Block P, Group 14, Period 3 element. The number of electrons in each of Silicon's shells is 2, 8, 4 and its electronic configuration is [Ne] 3s² 3p². In its elemental form silicon's CAS number is 7440-21-3. The silicon atom has a radius of 117.6.pm and it's Van der Waals radius is 210.pm. Silicon is not toxic but can cause chronic respiratory problems if inhaled as a fine silica or silicate dust. Asbestos silicates are carcinogenic. Silicon is one of man's most useful elements. It makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, being exceeded only by oxygen. The Czochralski process is commonly used to produce single crystals of silicon used for solid-state or semiconductor devices. Silica, as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Silicon is available as metal and compounds with purities from 99% to 99.9999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. Ultra high purity silicon can be doped with boron, gallium, phosphorus , or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics and space-age industries. Hydrogenated amorphous silicon has shown promise in producing economical cells for converting solar energy into electricity. Silcones are important products of silicon. They range from liquids to hard, glasslike solids with many useful properties. Silicon was first discovered by Jons Berzelius in 1823. The name Silicon originates from the Latin word "silex" which means flint or hard stone. See Silicon research below.

Arsenic is a Block P, Group 15, Period 4 element. The number of electrons in each of Arsenic's shells is 2, 8, 18, 5 and its electronic configuration is [Ar] 3d¹⁰ 4s² 4p³. In its elemental form arsenic's CAS number is 1327-53-3. The arsenic atom has a radius of 124.5.pm and it's Van der Waals radius is 185.pm. Arsenic in the organic form is not harmful but in the inorganic form it is extremely toxic even in very small amounts. Arsenic has numerous applications as a semiconductor and other electronic applications as Indium arsenide, silicon arsenide and tin arsenidea. Arsenic is finding increasing uses as a doping agent in solid-state devices such as transistors. Gallium arsenide is used as a laser material to convert electricity directly into coherent light. Arsenic is used in bronzing and for hardening and improving the sphericity of shot. Arsenic is available as metal and compounds with purities from 99% to 99.9999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. Arsenic information, including Technical Data, Safety Data and its High Purity properties, research, applications and other useful facts are discussed here. Scientific facts such as the atomic structure, ionization energy, abundance on Earth, conductivity and thermal properties are included. See Arsenic research below.

An arsenide, an anion with the charge -3, is a rare mineral group consisting of compounds of one or more metals with arsenic (As). Arsenide anions have no existence in solution since they are extremely basic. These solid salts have very high lattice energies and are toxic due to the inherent toxicity of arsenic. Arsenides have applications in semiconductors, laser and light-emitting diodes, quantum dots, and optical and pressure sensors.

American Elements semi conducting materials are crystal structures produced from ultra high purity starting materials synthesized by our high purity production facility which includes several large electric muffle furnaces, a tube furnace for hydrogen reduction, 50 gallon glass-lined Pfaudler reactors supported by our analytical laboratory containing X-ray diffraction, SEM, AA, BET surface area, and ICP Spectrometry for trace metals analysis. See a discussion of American Elements Ultra High Purity and Analytical capabilities. See Crystal Growth for processes used to fabricate semiconductor materials, which include:

Crystal "pulling" by the Czochaiski method for production of semiconductor materials
Flux growth and gradient freeze
Directional solidification of fluorites using both the Bridgman-Stockbarger and float zoning techniques

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