Silicon Arsenide

High Purity SiAs

Silicon-Arsenide is a semiconductor and is used in the production of semiconductors as a substitute for direct arsenic usage. Additional technical, research and safety (MSDS) information is available.

Silicon is a Block P, Group 14, Period 3 element. The electronic configuration is [Ne] 3s² 3p². In its elemental form silicon's CAS number is 7440-21-3. The silicon atom has a radius of 117.6.pm and it's Van der Waals radius is 210.pm. Silicon is one of man's most useful elements. It makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, being exceeded only by oxygen. The Czochralski process is commonly used to produce single crystals of silicon used for solid-state or semiconductor devices. Silica, as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties.

Arsenic is a Block P, Group 15, Period 4 element. The electronic configuration is [Ar] 3d¹⁰ 4s² 4p³. In its elemental form arsenic's CAS number is 1327-53-3. The arsenic atom has a radius of 124.5.pm and it's Van der Waals radius is 185.pm. Arsenic has numerous applications as a semiconductor and other electronic applications as Indium arsenide, silicon arsenide and tin arsenidea. Arsenic is finding increasing uses as a doping agent in solid-state devices such as transistors. Gallium arsenide is used as a laser material to convert electricity directly into coherent light. Arsenic is used in bronzing and for hardening and improving the sphericity of shot. Arsenic is available as metal and compounds with purities from 99% to 99.9999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder.

American Elements semi conducting materials are crystal structures produced from ultra high purity starting materials synthesized by our high purity production facility which includes several large electric muffle furnaces, a tube furnace for hydrogen reduction, 50 gallon glass-lined Pfaudler reactors supported by our analytical laboratory containing X-ray diffraction, SEM, AA, BET surface area, and ICP Spectrometry for trace metals analysis. See a discussion of American Elements Ultra High Purity and Analytical capabilities. See Crystal Growth for processes used to fabricate semiconductor materials, which include:

• Crystal "pulling" by the Czochaiski method for production of semiconductor materials
• Flux growth and gradient freeze
• Directional solidification of fluorites using both the Bridgman-Stockbarger and float zoning techniques