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Silicon Carbide Powder

High Purity SiC Powder
CAS 409-21-2

Product Product Code Request Quote
(2N) 99% Silicon Carbide Powder SI-C-02-P Request Quote
(2N5) 99.5% Silicon Carbide Powder SI-C-025-P Request Quote
(3N) 99.9% Silicon Carbide Powder SI-C-03-P Request Quote
(3N5) 99.95% Silicon Carbide Powder SI-C-035-P Request Quote
(4N) 99.99% Silicon Carbide Powder SI-C-04-P Request Quote
(5N) 99.999% Silicon Carbide Powder SI-C-05-P Request Quote

Formula CAS No. PubChem SID PubChem CID MDL No. EC No IUPAC Name Beilstein
Re. No.
SiC 409-21-2 134973805 9863 MFCD00049531 206-991-8 methanidylidynesilicon N/A [C-]#[Si+] 1\/CSi\/c1-2 HBMJWWWQQXIZIP-UHFFFAOYSA-N

PROPERTIES Compound Formula Mol. Wt. Appearance Density Exact Mass Monoisotopic Mass Charge MSDS
SiC 40.1 Silvery 3.22 g/cm3 39.976927 39.976927 0 Safety Data Sheet

Carbide IonAmerican Elements specializes in producing high purity Silicon Carbide Powder with the smallest possible average grain sizes for use in preparation of pressed and bonded sputtering targets and in Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes including Thermal and Electron Beam (E-Beam) Evaporation, Low Temperature Organic Evaporation, Atomic Layer Deposition (ALD), Metallic-Organic and Chemical Vapor Deposition (MOCVD). Powders are also useful in any application where high surface areas are desired such as water treatment and in fuel cell and solar applications. Nanoparticles () also produce very high surface areas. Our standard Powder particle sizes average in the range of - 325 mesh, - 100 mesh, 10-50 microns and submicron (< 1 micron). We can also provide many materials in the nanoscale range. Like diamond, a pure carbon compound, Carbide compounds tend to be extremely hard, refractory and resistant to wear, corrosion and heat, making them excellent candidates for coatings for drills and other tools. They often have other valuable properties in combination with toughness, such as electrical conductivity, low thermal expansion and abrasiveness.

Silicon (Si) atomic and molecular weight, atomic number and elemental symbolSilicon (atomic symbol: Si, atomic number: 14) is a Block P, Group 14, Period 3 element with an atomic weight of 28.085. Silicon Bohr MoleculeThe number of electrons in each of Silicon's shells is 2, 8, 4 and its electron configuration is [Ne] 3s2 3p2. The silicon atom has a radius of 111 pm and a Van der Waals radius of 210 pm. Silicon was discovered and first isolated by Jöns Jacob Berzelius in 1823. Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The metalloid is rarely found in pure crystal form and is usually produced from the iron-silicon alloy ferrosilicon. Elemental Silicon Silica (or silicon dioxide), as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Ultra high purity silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics industry.The name Silicon originates from the Latin word silex which means flint or hard stone. For more information on silicon, including properties, safety data, research, and American Elements' catalog of silicon products, visit the Silicon element page.

Exclamation Mark-Acute Toxicity        

methanidylidynesilicon; Carborundum; Silicon monocarbide; Betarundum Carborundeum; carbon silicide; Green densic

Silicon Chloride Silicon Foil Aluminium Silicon Magnesium Alloy Silicon Nanoparticles Silicon Pellets
Silicon Fluoride Silicon Metal Silicon Acetate Solution Silicon 2 - Ethylhexanoate Silicon Oxide Pellets
Calcium Silicon Alloy Silicon Oxide Silicon Nanoparticles Silicon Sputtering Target Silicon Wire
Show Me MORE Forms of Silicon

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.

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Recent Research & Development for Silicon

  • Magnetic and Electric Hotspots with Silicon Nanodimers. Reuben M Bakker, Dmitry Permyakov, Ye Feng Yu, Dmitry Markovich, Ramón Paniagua-Domínguez, Leonard Gonzaga, Anton Samusev, Yuri S. Kivshar, Boris Luk`yanchuk, and Arseniy I. Kuznetsov. Nano Lett.: February 16, 2015
  • Role of Interfacial Oxide in High-Efficiency Graphene-Silicon Schottky Barrier Solar Cells. Yi Song, Xinming Li, Charles Mackin, Xu Zhang, Wenjing Fang, Tomas Palacios, Hongwei Zhu, and Jing Kong. Nano Lett.: February 16, 2015
  • Directional Fano Resonance in a Silicon Nanosphere Dimer. Jiahao Yan, Pu Liu, Zhaoyong Lin, Hao Wang, Huanjun Chen, Chengxin Wang, and Guowei Yang. ACS Nano: February 15, 2015
  • Tuning the Polymerization Behavior of Silicon-Bridged [1]Ferrocenophanes Using Bulky Substituents. Rebecca A. Musgrave, Andrew D. Russell, George R. Whittell, Mairi F. Haddow, and Ian Manners. Organometallics: February 13, 2015
  • Soft porous silicon rubbers as key elements for the realization of acoustic metamaterials. Kevin Zimny, Aurore Merlin, BA Sidiki Abdoulaye, Christophe Aristégui, Thomas Brunet, and Olivier Mondain-Monval. Langmuir: February 12, 2015
  • Highly Sensitive and Selective Detection of Dopamine Using One-Pot Synthesized Highly Photoluminiscent Silicon Nanoparticles. Xiaodong Zhang, Xiaokai Chen, Siqi Kai, Hong-Yin Wang, Jingjing Yang, Fu-Gen Wu, and Zhan Chen. Anal. Chem.: February 11, 2015
  • The Role of Silicon Nanowire Diameter for Alkyl (chain lengths: C1-C18) Passivation Efficiency through Si-C Bonds. Muhammad Y. Bashouti, Carmelina A. Garzuzi, María de la Mata, Jordi Arbiol, Juergen Ristein, Hossam Haick, and Silke Christiansen. Langmuir: February 10, 2015
  • Shape-dependent light scattering properties of subwavelength silicon nanoblocks. Ho-Seok Ee, Ju-Hyung Kang, Mark Brongersma, and Min-Kyo Seo. Nano Lett.: February 10, 2015
  • Characterization of alkylsilane self-assembled monolayers on silicon by molecular simulation. Juan Manuel Castillo, Mischa Klos, Karin Jacobs, Martin Horsch, and Hans Hasse. Langmuir: February 10, 2015
  • Higher Ionization Energies from Sequential Vacuum-Ultraviolet Multiphoton Ionization of Size-Selected Silicon Cluster Cations. Christian Kasigkeit, Konstantin Hirsch, Andreas Langenberg, Thomas Moller, Jürgen Probst, Jochen Rittmann, Marlene Vogel, Jörg Wittich, Vicente Zamudio-Bayer, Bernd von Issendorff, and J. Tobias Lau. J. Phys. Chem. C: February 9, 2015

Recent Research & Development for Carbides

  • Two-Dimensional Titanium Carbide for Efficiently Reductive Removal of Highly Toxic Chromium(VI) from Water. Yulong Ying, Yu Liu, Xinyu Wang, Yiyin Mao, Wei Cao, Pan Hu, and Xinsheng Peng. ACS Appl. Mater. Interfaces: January 5, 2015
  • Continuous-Mode Laser Ablation at the Solid–Liquid Interface of Pelletized Low-Cost Materials for the Production of Luminescent Silicon Carbide Nanocrystals. M. Carmen Ortega-Liébana, José L. Hueso, Raul Arenal, Ruth Lahoz, Germán F. de la Fuente, and Jesús Santamaría. J. Phys. Chem. C: December 23, 2014
  • Structural Evolutions in Polymer-Derived Carbon-Rich Amorphous Silicon Carbide. Kewei Wang, Baisheng Ma, Xuqin Li, Yiguang Wang, and Linan An. J. Phys. Chem. A: December 9, 2014
  • Macroscopic Approach to the Nucleation and Propagation of Foreign Polytype Inclusions during Seeded Sublimation Growth of Silicon Carbide. Nikolaos Tsavdaris, Kanaparin Ariyawong, Jean-Marc Dedulle, Eirini Sarigiannidou, and Didier Chaussende. Crystal Growth & Design: December 4, 2014
  • Nanocasting Hierarchical Carbide-Derived Carbons in Nanostructured Opal Assemblies for High-Performance Cathodes in Lithium–Sulfur Batteries. Claudia Hoffmann, Sören Thieme, Jan Brückner, Martin Oschatz, Tim Biemelt, Giovanni Mondin, Holger Althues, and Stefan Kaskel. ACS Nano: November 29, 2014
  • Interaction Between Silicon–Carbide Nanotube and Cholesterol Domain. A Molecular Dynamics Simulation Study.. Przemys?aw Raczy?ski, Krzysztof Górny, Jannis Samios, and Zygmunt Gburski. J. Phys. Chem. C: November 25, 2014
  • In Situ Formation of Nanoparticle Titanium Carbide/Nitride Shaped ceramics from Meltable Precursor Composition. Teddy M. Keller, Matthew Laskoski, Andrew P. Saab, Syed B. Qadri, and Manoj Kolel-Veetil. J. Phys. Chem. C: November 14, 2014
  • Silicon Carbide with Uniformly Sized Spherical Mesopores from Butoxylated Silica Nanoparticles Template. Sergei A. Alekseev, Dmytro M. Korytko, Svitlana V. Gryn, Viacheslav Iablokov, Olena A. Khainakova, Santiago Garcia-Granda, and Norbert Kruse. J. Phys. Chem. C: September 16, 2014
  • Silicene on Zirconium Carbide. Takashi Aizawa, Shigeru Suehara, and Shigeki Otani. J. Phys. Chem. C: September 15, 2014
  • Tailoring the Properties of Atomic Layer Deposited Nickel and Nickel Carbide Thin Films via Chain-Length Control of the Alcohol Reducing Agents. Mouhamadou Sarr, Naoufal Bahlawane, Didier Arl, Manuel Dossot, Edward McRae, and Damien Lenoble. J. Phys. Chem. C: September 10, 2014