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Silicon Nanoprisms
High Purity Si Nanoprisms
7783-61-1
Product Product Code Order or Specifications
(2N) 99% Silicon Nanoprisms SI-M-02-NPR Contact American Elements
(3N) 99.9% Silicon Nanoprisms SI-M-03-NPR Contact American Elements
(4N) 99.99% Silicon Nanoprisms SI-M-04-NPR Contact American Elements
(5N) 99.999% Silicon Nanoprisms SI-M-05-NPR Contact American Elements

 

CHEMICAL
IDENTIFICATION
Formula CAS No. PubChem
SID
PubChem CID MDL No. EC No IUPAC Name Beilstein
Re. No.
SMILES
Identifier
InChI
Identifier
InChI
Key
Si 7440-21-3 24882537 N/A MFCD00085311 231-130-8 N/A N/A N/A N/A N/A

Mol. Wt. Appearance True Density Bulk Density Melting Point Boiling Point Average Particle Size Size Range Crystal Phase Spec Surface Area Morphology MSDS
28.08 Yello brown 2330 kg/cm3 1414 g/cm3 N/A 2900 °C 100-150 nm N/A N/A N/A Spherical Safety Data Sheet



American Elements produces to many standard grades when applicable, including Mil Spec (military grade); ACS, Reagent and Technical Grade; Food, Agricultural and Pharmaceutical Grade; Optical Grade, USP and EP/BP (European Pharmacopeia/British Pharmacopeia) and follows applicable ASTM testing standards.See safety data and research below and pricing/lead time above. American Elements specializes in producing Silicon as flat irregularly shaped pieces of material in a varying range of sizes. Most flakes/prisms are produced from cast Ingots for use in coating and thin film Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes including Thermal and Electron Beam (E-Beam) Evaporation, Low Temperature Organic Evaporation, Atomic Layer Deposition (ALD), Organometallic and Chemical Vapor Deposition (MOCVD) for specific applications such as fuel cells and solar energy. Thickness can range from 0.003" to approximately 2mm for all metals. Some metals can also be rolled down as thin as 0.001” for use as an evaporation source in microelectronics, optics, magnetics, MEMS, and hard resistant coatings. Piece sizes are available up to approximately 7" maximum width. Maximum lengths of about 20" can be obtained with a nominal thickness between about 0.005" and 0.020" for thin film deposition on glass or metal substrates. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles (See also application discussion at Nanotechnology Information and at Quantum Dots) and in the form of solutions and organometallics. We also produce Silicon as rods, powder and plates. Oxide compounds are not conductive to electricity. However, certain perovskite structured oxides are electronically conductive finding application in the cathode of solid oxide fuel cells and oxygen generation systems. Other shapes are available by request.

Silicon(Si) atomic and molecular weight, atomic number and elemental symbolSilicon is a Block P, Group 14, Period 3 element. The number of electrons in each of Silicon's shells is 2, 8, 4 and its electronic configuration is [Ne] 3s2 3p2. In its elemental form silicon's CAS number is 7440-21-3. The silicon atom has a radius of 117.6.pm and it's Van der Waals radius is 210.pm. Silicon is not toxic but can cause chronic respiratory problems if inhaled as a fine silica or silicate dust. Asbestos silicates are carcinogenic. Silicon isElemental Silicon one of man's most useful elements. It makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, being exceeded only by oxygen. The Czochralski process is commonly used to produce single crystals of silicon used for solid-state or semiconductor devices. Silica, as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Silicon is available as metal and compounds with purities from 99% to 99.9999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. Ultra high purity silicon can be doped with boron, gallium, phosphorus , or arsenic to produce silicon for use in Silicon Bohr Moleculetransistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics and space-age industries. Hydrogenated amorphous silicon has shown promise in producing economical cells for converting solar energy into electricity. Silcones are important products of silicon. They range from liquids to hard, glasslike solids with many useful properties. Silicon was first discovered by Jons Berzelius in 1823. The name Silicon originates from the Latin word "silex" which means flint or hard stone. See Silicon research below.

Have a Question? Ask a Chemical Engineer or Material Scientist   Request an MSDS or Certificate of Analysis

 
Toxicity
Safety & Handling
  Flame-Flammables          
Signal Word Hazard Statements Hazard Codes Risk Codes Safety Precautions RTECS No. Transport Information WGK Germany
Warning N/A F 11 16-33-36 VW0400000 UN 1346 4.1/PG 3 2

 

PACKAGING SPECIFICATIONS FOR BULK & RESEARCH QUANTITIES

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Bullion and bar forms are best if purchasing solely for physical possession and risk exposure.

 


 

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Recent Research & Development for Silicon

  • RECONSTRUCTION OF THE THUMB WITH A MODIFIED WRAP-AROUND FLAP IN A PATIENT SUFFERING FROM ?-THALASSEMIA MINOR. Galeano M, Checcucci G, Ceruso M. Hand Surg. 2011;16(3):361-5. PMID: 22072476 [PubMed - in process]

  • Isolated complete volar dislocation of the capitate: a case report. Checcucci G, Bigazzi P, Zucchini M, Ceruso M. Hand Surg. 2011;16(3):353-6. PMID: 22072474 [PubMed - in process]

  • Dielectrophoretic chip with multilayer electrodes and micro-cavity array for trapping and programmably releasing single cells. Chuang CH, Huang YW, Wu YT. Biomed Microdevices. 2011 Nov 10. [Epub ahead of print] PMID: 22072154 [PubMed - as supplied by publisher]

  • Structures of medium sized tin cluster anions. Wiesel A, Drebov N, Rapps T, Ahlrichs R, Schwarz U, Kelting R, Weis P, Kappes MM, Schooss D. Phys Chem Chem Phys. 2011 Nov 9. [Epub ahead of print] PMID: 22071636 [PubMed - as supplied by publisher]

  • Discrimination task reveals differences in neural bases of tinnitus and hearing impairment. Husain FT, Pajor NM, Smith JF, Kim HJ, Rudy S, Zalewski C, Brewer C, Horwitz B. PLoS One. 2011;6(10):e26639. Epub 2011 Oct 31. PMID: 22066003 [PubMed - in process]

  • A suggested technique for the application of the cone beam computed tomography periapical index. Esposito S, Cardaropoli M, Cotti E. Dentomaxillofac Radiol. 2011 Dec;40(8):506-12. PMID: 22065800 [PubMed - in process]

  • (4-Chloro-3-nitro-benzoato)triphenyl-tin(IV). Win YF, Choong CS, Teoh SG, Quah CK, Fun HK. Acta Crystallogr E Struct Rep Online. 2011 Sep 1;67(Pt 9):m1270-1. Epub 2011 Aug 27. PMID: 22065496 [PubMed]

  • Bis{2-[(E)-(5-tert-butyl-2-hy-droxy-phen-yl)diazen-yl]benzoato}dimethyl-tin(IV). Basu Baul TS, Paul A, Tiekink ER. Acta Crystallogr E Struct Rep Online. 2011 Oct 1;67(Pt 10):m1383-4. Epub 2011 Sep 14. PMID: 22065466 [PubMed]

  • Chloridodiphen-yl{[1-(1,3-thia-zol-2-yl-?N)ethyl-idene]-4-phenyl-thio-semicarbazidato-?N,S}tin(IV) methanol monosolvate. Arumugam SR, Dasary SS, Venkatraman R, Yu H, Fronczek FR. Acta Crystallogr E Struct Rep Online. 2011 Oct 1;67(Pt 10):m1409-10. Epub 2011 Sep 30. PMID: 22065366 [PubMed]

  • catena-Poly[[triphenyl-tin(IV)]-?-5-amino-2-nitro-benzoato-?O:O]. Win YF, Choong CS, Teoh SG, Quah CK, Fun HK. Acta Crystallogr E Struct Rep Online. 2011 Sep 1;67(Pt 9):m1276-7. Epub 2011 Aug 27. PMID: 22064934 [PubMed]

  • Dual detection strategy for electrochemical analysis of glucose and nitrite using a partitionally modified electrode. Wang J, Diao P, Zhang Q. Analyst. 2011 Nov 7. [Epub ahead of print] PMID: 22064849 [PubMed - as supplied by publisher]

  • fac-(2-Amido-ethyl-?C,O)trichlorido(urea-?O)tin(IV). Howie RA, de Lima GM, Tiekink ER, Wardell JL, Wardell SM. Acta Crystallogr E Struct Rep Online. 2011 Oct 1;67(Pt 10):m1420-1. Epub 2011 Sep 30. PMID: 22064619 [PubMed]

  • Highly sensitive nonenzymatic glucose sensor based on electrospun copper oxide-doped nickel oxide composite microfibers. Cao F, Guo S, Ma H, Yang G, Yang S, Gong J. Talanta. 2011 Oct 30;86:214-20. Epub 2011 Sep 8. PMID: 22063533 [PubMed - in process]

  • Cross-Linked Perylene Diimide-Based n-Type Interfacial Layer for Inverted Organic Photovoltaic Devices. Hains AW, Chen HY, Reilly TH, Gregg BA. ACS Appl Mater Interfaces. 2011 Nov 7. [Epub ahead of print] PMID: 22059439 [PubMed - as supplied by publisher]

  • Bis-(chloro-acetato-?O)bis(trimethyl-silylmethyl)tin(IV). Ding RF, Wang QB. Acta Crystallogr E Struct Rep Online. 2011 Sep 1;67(Pt 9):m1190. Epub 2011 Aug 2. PMID: 22058841 [PubMed]

  • A new langbeinite-type phosphate: K(2)AlSn(PO(4))(3). Li HY, Zhao D. Acta Crystallogr E Struct Rep Online. 2011 Oct 1;67(Pt 10):i56. Epub 2011 Sep 20. PMID: 22058680 [PubMed]

  • Enhanced resistance of yeast mutants deficient in low-affinity iron and zinc transporters to stannous-induced toxicity. Viau CM, Cardone JM, Guecheva TN, Yoneama ML, Dias JF, Pungartnik C, Brendel M, Saffi J, Henriques JA. Chemosphere. 2011 Nov 2. [Epub ahead of print] PMID: 22055569 [PubMed - as supplied by publisher]

  • Allylsilanes in "Tin-free" Oximation, Alkenylation, and Allylation of Alkyl Halides. Rouquet G, Robert F, Méreau R, Castet F, Landais Y. Chemistry. 2011 Nov 3. doi: 10.1002/chem.201101842. [Epub ahead of print] PMID: 22052660 [PubMed - as supplied by publisher]

  • Surface Modification of Indium-Tin-Oxide Via Self-Assembly of a Donor-Acceptor Complex: A Density Functional Theory Study. Li H, Winget P, Bredas JL. Adv Mater. 2011 Nov 3. doi: 10.1002/adma.201103009. [Epub ahead of print] No abstract available. PMID: 22052626 [PubMed - as supplied by publisher]

  • Minimally invasive video-assisted cardiac surgery: operative techniques, application fields and clinical outcomes. Vistarini N, Aiello M, Viganň M. Future Cardiol. 2011 Nov;7(6):775-87. PMID: 22050064 [PubMed - in process]

     

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