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Silicon Coins
High Purity Si Coins
7440-21-3
Product
Product Code
Order or Specifications
99% Silicon Coins
SI-M-02-BCN
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99.9% Silicon Coins
SI-M-03-BCN
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99.99% Silicon Coins
SI-M-04-BCN
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99.999% Silicon Coins
SI-M-05-BCN
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American Elements' AE Bullion™ group mints certified high purity Silicon Coins from laboratory certified engineered materials with properties applicable to chemical vapor deposition (CVP) for thin film and laboratory standard impurity levels for short and long term physical possession and to allow for exposure and controlled risk to industrial demand fluctuations reflected in the global silicon price. Coins are manufactured and minted under written SOPs (standard operating procedures) to assure quality and consistency by American Elements' AE Planchet of Ultra High Purity Metal Metals™ custom synthesis and refining group. Besides silicon coins, silicon bars and silicon ingots may be purchased by funds, currency reserves, exchange-traded funds (ETFs), private investors, collectors and hobbyists to take direct physical title and possession of the metal with risk exposure from shortages or chemical/physical technology changes, such as in solar energy, and fuel cell developments, equivalent to movements in the industrial application price of Silicon. American Elements offers bonded short and long term warehouse inventory services for AE Bullion™ coins to investors, funds and collectors who do not wish to take physical custody of the metal or lack secure storage or warehouse capabilities. The lowest possible coin unit price to Silicon melt value ratio is maintained through state of the art mint and die systems and analytically certified rounds (planchet or flan) refined and pressed to exacting purity and weight. We also produce Silicon as rod, pellets, powder, pieces, disc, granules, and wire, as nanoparticles and in compound forms, such as oxide. Silicon Coins may be purchased in bulk or small quantity. Portfolios of different elemental metal coins or bars may also be structured and purchased from the AE Bullion™ group allowing for strategic risk allocation and indexing across a basket of metals.

Etching of Medieval Minting Equipment and Processes Silicon is a Block P, Group 14, Period 3 element. The electronic configuration is [Ne] 3s2 3p2. In its elemental form silicon's CAS number is 7440-21-3. The silicon atom has a radius of 117.6.pm and it's Van der Waals radius is 210.pm. Silicon is one of man's most useful elements. It makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, being exceeded only by oxygen. The Czochralski process is commonly used to produce single crystals of silicon used for solid-state or semiconductor devices. Silica, as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Silicon is available as metal and compounds with purities from 99% to 99.9999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. Ultra high purity silicon can be doped with boron ,gallium ,phosphorus , or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics and space-age industries.

Formula CAS No. Appearance Molecular Weight Density Melting Point Boiling Point
Si 7440-21-3 Silvery 28.08 2330 kg/m³ 1414 °C 2900 °C
PRODUCT CATALOG Submicron & Nanopowder Tolling Ultra High Purity Sputtering Target Crystal Growth Rod, Plate, Powder, etc.
 
 
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Recent Research & Development for Silicon

  • Metal patterning on silicon surface by site-selective electroless deposition through colloidal crystal templating. J Colloid Interface Sci. 2007 Oct 1; [Epub ahead of print]

  • Initial site of bile regurgitation following extrahepatic biliary obstruction in living rats. J Gastroenterol Hepatol. 2007 Nov;22(11):1983-92.

  • Analytical Performance of a Venturi-Assisted Array of Micromachined Ultrasonic Electrosprays Coupled to Ion Trap Mass Spectrometry for the Analysis of Peptides and Proteins. Anal Chem. 2007 Oct 3; [Epub ahead of print]

  • Silicon-based microfilters for whole blood cell separation. Biomed Microdevices. 2007 Oct 4; [Epub ahead of print]

  • The role of aluminium and silicon in the setting chemistry of glass ionomer cements. J Mater Sci Mater Med. 2007 Oct 4; [Epub ahead of print]

  • Thin films of SiO(2) and hydroxyapatite on titanium deposited by spray pyrolysis. J Mater Sci Mater Med. 2007 Oct 4; [Epub ahead of print]

  • Exploration of the use of novel SiO(2) nanocomposites doped with fluorescent Eu(3+)/sensitizer complex for latent fingerprint detection. Forensic Sci Int. 2007 Oct 1; [Epub ahead of print]

  • Implant surface analysis and microbiologic evaluation of failed implants retrieved from smokers. J Oral Implantol. 2007;33(4):232-8.

  • Assembly of nanosize metallic particles and molecular wires on electrode surfaces. Chem Commun (Camb). 2007 Oct 21;(39):3983-9. Epub 2007 May 29.

  • Characterization of the calcification of cardiac valve bioprostheses by environmental scanning electron microscopy and vibrational spectroscopy. J Microsc. 2007 Oct;228(Pt 1):62-77.

  • Remotely adjustable check-valves with an electrochemical release mechanism for implantable biomedical microsystems.
    Biomed Microdevices. 2007 Jan 25; [Epub ahead of print]

  • Implantable microscale neural interfaces.
    Biomed Microdevices. 2007 Jan 25; [Epub ahead of print]

  • Towards electrically conductive, self-healing materials.
    J R Soc Interface. 2007 Jan 3; [Epub ahead of print]

  • Skin capacitance imaging of acne lesions.
    Skin Res Technol. 2007 Feb;13(1):9-12.

  • Effects of charge and size on condensation of supersaturated water vapor on nanoparticles of SiO(2).
    J Chem Phys. 2007 Jan 21;126(3):034701.

  • Electronic Properties of Si and Ge Atoms Doped In Clusters: In(n)()Si(m)() and In(n)()Ge(m)().
    J Phys Chem A Mol Spectrosc Kinet Environ Gen Theory. 2007 Feb 1;111(4):573-7.

  • Molecular Recognition Forces between Immunoglobulin G and a Surface Protein Adhesin on Living Staphylococcus aureus.
    Langmuir. 2007 Jan 24; [Epub ahead of print]

  • Syntheses and X-ray Diffraction, Photochemical, and Optical Characterization of Cu(2)Si(x)()Sn(1-)(x)()S(3) (0.4 </= x </= 0.6) for Photovoltaic Applications.
    Inorg Chem. 2007 Jan 24; [Epub ahead of print]

  • Adsorption of Trimethoxysilane and of 3-Mercaptopropyltrimethoxysilane on Silica and on Silicon Wafers from Vapor Phase: An IR Study.
    Langmuir. 2007 Jan 23; [Epub ahead of print]

  • Comparison of Protein Surface Attachment on Untreated and Plasma Immersion Ion Implantation Treated Polystyrene: Protein Islands and Carpet.
    Langmuir. 2007 Jan 23; [Epub ahead of print]

 

 

 

 

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