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Silicon Powder

High Purity Si Powder
CAS 7440-21-3

Product Product Code Request Quote
(2N) 99% Silicon Powder SI-M-02-P Request Quote
(3N) 99.9% Silicon Powder SI-M-03-P Request Quote
(4N) 99.99% Silicon Powder SI-M-04-P Request Quote
(5N) 99.999% Silicon Powder SI-M-05-P Request Quote

Formula CAS No. PubChem SID PubChem CID MDL No. EC No Beilstein
Re. No.
Si 7440-21-3 24882537 5461123 MFCD00085311 231-130-8 N/A [SiH4] InChI=1S/Si XUIMIQQOPSSXEZ-UHFFFAOYSA-N

PROPERTIES Mol. Wt. Appearance Density Tensile Strength Melting Point Boiling Point Thermal Conductivity Electrical Resistivity Eletronegativity Specific Heat Heat of Vaporization Heat of Fusion MSDS
28.08 Silvery 2330 kg/m³ N/A 1414 °C 2900 °C 1.49 W/cm/K @ 298.2 K 3-4 microhm-cm @ 0°C 1.8 Paulings 0.168 Cal/g/K @ 25°C 40.6 K-Cal/gm atom at 2355 °C 9.47 Cal/gm mole Safety Data Sheet

Ultra High Purity Metal PowdersAmerican Elements specializes in producing high purity Silicon Powder with the smallest possible average grain sizes for use in preparation of pressed and bonded sputtering targets and in Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes including Thermal and Electron Beam (E-Beam) Evaporation, Low Temperature Organic Evaporation, Atomic Layer Deposition (ALD), Metallic-Organic and Chemical Vapor Deposition (MOCVD). Powders are also useful in any application where high surface areas are desired such as water treatment and in fuel cell and solar applications. Nanoparticles () also produce very high surface areas. Our standard Powder particle sizes average in the range of - 325 mesh, - 100 mesh, 10-50 microns and submicron (< 1 micron). We can also provide many materials in the nanoscale range. See safety data and research below and pricing/lead time above. We also produce Silicon as rod, ingot, pieces, pellets, disc, granules, wire, and in compound forms, such as oxide. Other shapes are available by request.

Silicon (Si) atomic and molecular weight, atomic number and elemental symbolSilicon (atomic symbol: Si, atomic number: 14) is a Block P, Group 14, Period 3 element with an atomic weight of 28.085. Silicon Bohr MoleculeThe number of electrons in each of Silicon's shells is 2, 8, 4 and its electron configuration is [Ne] 3s2 3p2. The silicon atom has a radius of 111 pm and a Van der Waals radius of 210 pm. Silicon was discovered and first isolated by Jöns Jacob Berzelius in 1823. Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The metalloid is rarely found in pure crystal form and is usually produced from the iron-silicon alloy ferrosilicon. Elemental Silicon Silica (or silicon dioxide), as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Ultra high purity silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics industry.The name Silicon originates from the Latin word silex which means flint or hard stone. For more information on silicon, including properties, safety data, research, and American Elements' catalog of silicon products, visit the Silicon element page.

Material Safety Data Sheet MSDS
Signal Word Warning
Hazard Statements H228
Hazard Codes F
Risk Codes 11
Safety Precautions 16-33-36
RTECS Number VW0400000
Transport Information UN 1346 4.1/PG 3
WGK Germany 2
Globally Harmonized System of
Classification and Labelling (GHS)

Silicon Chloride Silicon Foil Aluminium Silicon Magnesium Alloy Silicon Nanoparticles Silicon Pellets
Silicon Fluoride Silicon Metal Silicon Acetate Solution Silicon 2 - Ethylhexanoate Silicon Oxide Pellets
Calcium Silicon Alloy Silicon Oxide Silicon Nanoparticles Silicon Sputtering Target Silicon Wire
Show Me MORE Forms of Silicon

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.

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Recent Research & Development for Silicon

  • Modeling the surface photovoltage of silicon slabs with varying thickness. Vazhappilly T, Kilin DS, Micha DA. J Phys Condens Matter. 2015 Mar 13
  • Sub-amorphous Thermal Conductivity in Ultrathin Crystalline Silicon Nanotubes. Wingert MC, Kwon S, Hu M, Poulikakos D, Xiang J, Chen R. Nano Lett. 2015 Mar 16.
  • Adsorption and desorption characteristics of alcohol vapors on a nanoporous ZIF-8 film investigated using silicon microcantilevers. Yim C, Lee M, Kim W, Lee S, Kim GH, Kim KT, Jeon S. Chem Commun (Camb). 2015 Mar 10.
  • High-Speed GaN/GaInN nanowire array LED on Silicon (111). Köster R, Sager D, Quitsch WA, Pfingsten O, Poloczek A, Blumenthal S, Keller G, Prost W, Bacher G, Tegude FJ. Nano Lett. 2015 Mar 10.
  • A Silicon-Based Two-Dimensional Chalcogenide: Growth of Si2Te3 Nanoribbons and Nanoplates. Keuleyan S, Wang M, Chung FR, Commons J, Koski KJ. Nano Lett. 2015 Mar 16.
  • High-efficiency photon capturing in ultrathin silicon solar cells with front nanobowl texture and truncated-nanopyramid reflector. Yang Z, Li X, Wu S, Gao P, Ye J. Opt Lett. 2015 Mar 15
  • Silicon-mediated changes in polyamines participate in silicon-induced salt tolerance in Sorghum bicolor L. Yin L, Wang S, Tanaka K, Fujihara S, Itai A, DEN X, Zhang S. Plant Cell Environ. 2015 Mar 5.
  • Carbon p Electron Ferromagnetism in Silicon Carbide. Wang Y, Liu Y, Wang G, Anwand W, Jenkins CA, Arenholz E, Munnik F, Gordan OD, Salvan G, Zahn DR, Chen X, Gemming S, Helm M, Zhou S. Sci Rep. 2015 Mar 11
  • Complete magnesiothermic reduction reaction of vertically aligned mesoporous silica channels to form pure silicon nanoparticles. Kim KH, Lee DJ, Cho KM, Kim SJ, Park JK, Jung HT. Sci Rep. 2015 Mar 11
  • [Changes in proteome profiles of rat liver microsomes induced by silicon dioxide nanoparticles]. Tananova ON, Arianova EA, Gmoshinskii IV, Toropygin IY, Khryapova EV, Trusov NV, Khotimchenko SA, Tutel'yan VA. Biomed Khim. 2015 Jan
  • Evolution, kinetics, energetics, and environmental factors of graphene degradation on silicon dioxide. Singha Roy S, Safron NS, Wu MY, Arnold MS. Nanoscale. 2015 Mar 16.
  • Continuous wave-pumped wavelength conversion in low-loss silicon nitride waveguides. Krückel CJ, Torres-Company V, Andrekson PA, Spencer DT, Bauters JF, Heck MJ, Bowers JE. Opt Lett. 2015 Mar 15
  • Controlled translocation of DNA through nanopores in carbon nano-, silicon-nitride- and lipid-coated membranes. Sischka A, Galla L, Meyer AJ, Spiering A, Knust S, Mayer M, Hall AR, Beyer A, Reimann P, Gölzhäuser A, Anselmetti D. Analyst. 2015 Mar 13.
  • Silicon nanomembranes: mechanisms for hydrolysis of silicon nanomembranes as used in bioresorbable electronics (adv. Mater. 11/2015). Yin L, Farimani AB, Min K, Vishal N, Lam J, Lee YK, Aluru NR, Rogers JA. Adv Mater. 2015 Mar
  • Aggregates of silicon quantum dots as a drug carrier: selective intracellular drug release based on pH-responsive aggregation/dispersion. Ohta S, Yamura K, Inasawa S, Yamaguchi Y. Chem Commun (Camb). 2015 Mar 13.
  • Bilateral substrate effect on the thermal conductivity of two-dimensional silicon. Zhang X, Bao H, Hu M. Nanoscale. 2015 Mar 12.
  • The reason why thin-film silicon grows layer by layer in plasma-enhanced chemical vapor deposition. Kuwahara T, Ito H, Kawaguchi K, Higuchi Y, Ozawa N, Kubo M. Sci Rep. 2015 Mar 16
  • Comparative toxicity of silicon dioxide, silver and iron oxide nanoparticles after repeated oral administration to rats. Yun JW, Kim SH, You JR, Kim WH, Jang JJ, Min SK, Kim HC, Chung DH, Jeong J, Kang BC, Che JH. J Appl Toxicol. 2015 Mar 6.
  • Spontaneous Formation of Microgroove Arrays on the Surface of p-Type Porous Silicon Induced by a Turing Instability in Electrochemical Dissolution. Fukami K, Urata T, Krischer K, Nishi N, Sakka T, Kitada A, Murase K. Chemphyschem. 2015 Mar 12.
  • Sub-Parts Per Million NO2 Chemi-Transistor Sensors Based on Composite Porous Silicon/Gold Nanostructures Prepared by Metal-Assisted Etching. Sainato M, Strambini LM, Rella S, Mazzotta E, Barillaro G. ACS Appl Mater Interfaces. 2015 Mar 16.