American Elements Logo and U.S. Registered Trademark
Silicon Rod
High Purity Si Rod
7440-21-3
Product
Product Code
Order or Specifications
99% Silicon Rod
SI-M-02-R
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99.9% Silicon Rod
SI-M-03-R
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99.99% Silicon Rod
SI-M-04-R
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99.999% Silicon Rod
SI-M-05-R
Contact American Elements

American Elements specializes in producing high purity uniform shaped Silicon Rod with the highest possible density 99.9+% Ultra High Purity Metallic Rods and smallest possible average grain sizes for use in semiconductor, Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes including Thermal and Electron Beam (E-Beam) Evaporation, Low Temperature Organic Evaporation, Atomic Layer Deposition (ALD), Metallic-Organic and Chemical Vapor Deposition (MOCVD). Our standard Rod sizes range from 1/8" x 1/8" to 1/4" x 1/4" and 3 mm diameter. We can also provide Rod outside this range and deposition materials for specific applications such as fuel cells and solar energy and for thin film deposition on glass or metal substrates. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles (See also application discussion at Nanotechnology Information and at Quantum Dots) and in the form of solutions and organometallics. We have a variety of standard sized rod molds.. See research below. We also produce Silicon as powder, ingot, pieces, pellets, disc, granules, wire, and in compound forms, such as oxide. Other shapes are available by request.

Silicon for solar energy applications includes p-type and n-type silicon thin film layers which can be fabricated by deposition utilizing AE Solar Energy silicon. Silicon-based photovoltaic cells (PV Cells) for solar energy are fabricated from a positively charged or p-type silicon layer underneath a negatively charged or n-type silicon layer. See Safety information.

Silicon is a Block P, Group 14, Period 3 element. The electronic configuration is [Ne] 3s2 3p2. In its elemental form silicon's CAS number is 7440-21-3. The silicon atom has a radius of 117.6.pm and it's Van der Waals radius is 210.pm. Silicon is one of man's most useful elements. It makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, being exceeded only by oxygen. The Czochralski process is commonly used to produce single crystals of silicon used for solid-state or semiconductor devices. Silica, as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Silicon is available as metal and compounds with purities from 99% to 99.9999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. Ultra high purity silicon can be doped with boron, gallium, phosphorus , or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics and space-age industries. Hydrogenated amorphous silicon has shown promise in producing economical cells for converting solar energy into electricity. Silcones are important products of silicon. They range from liquids to hard, glasslike solids with many useful properties.

Formula CAS No. Appearance Molecular Weight Density Melting Point Boiling Point
Si 7440-21-3 Silvery 28.08 2330 kg/m³ 1414 °C 2900 °C
PRODUCT CATALOG Submicron & Nanopowder Tolling Ultra High Purity Sputtering Target Crystal Growth Rod, Plate, Powder, etc.
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Production Catalog Available in 32 Countries
 
Periodic table of the elements science and academic information, elements and advanced materials data, scientific presentations and all pages, designs, concepts, logos, and color schemes herein are the copyrighted proprietary rights and intellectual property of American Elements. American Elements is a U.S. Registered Trademark. © 2001-2009. American Elements. All rights reserved.

 

Recent Research & Development for Silicon

  • A realistic molecular model of cement hydrates. Pellenq RJ, Kushima A, Shahsavari R, Van Vliet KJ, Buehler MJ, Yip S, Ulm FJ. Proc Natl Acad Sci U S A. 2009 Sep 22;106(38):16102-7. Epub 2009 Sep 8. PMID: 19805265 [PubMed - in process]

  • Controlled release of chlorhexidine from amorphous microporous silica. Verraedt E, Pendela M, Adams E, Hoogmartens J, Martens JA. J Control Release. 2009 Oct 2. [Epub ahead of print] PMID: 19804804 [PubMed - as supplied by publisher]

  • Surface Induced Nanofiber Growth by Self-Assembly of a Silk-Elastin-like Protein Polymer. Hwang W, Kim BH, Dandu R, Cappello J, Ghandehari H, Seog J. Langmuir. 2009 Oct 5. [Epub ahead of print] PMID: 19803470 [PubMed - as supplied by publisher]

  • [Transaxillary dual-plane breast augmentation with endoscope assistant] Luan J, Mu DL, Mu L, Liu C, Zhang ZQ. Zhonghua Zheng Xing Wai Ke Za Zhi. 2009 May;25(3):175-7. Chinese. PMID: 19803195 [PubMed - in process]

  • Nanotechnology: A gentle jackhammer. Gnecco E. Nature. 2009 Sep 10;461(7261):178-9. No abstract available. PMID: 19741691 [PubMed - indexed for MEDLINE]

  • Tumour Risks and Genotype-Phenotype-Proteotype Analysis in 358 Patients with Germline Mutations in SDHB and SDHD. Ricketts CJ, Forman JR, Rattenbury E, Bradshaw N, Lalloo F, Izatt L, Cole TR, Armstrong R, Ajith Kumar VK, Morrison PJ, Atkinson AB, Douglas F, Ball SG, Cook J, Srirangalingam U, Killick P, Kirby G, Aylwin S, Woodward ER, Evans DG, Hodgson SV, Murday V, Chew SL, Connell JM, Blundell TL, Macdonald F, Maher ER. Hum Mutat. 2009 Oct 2. [Epub ahead of print] PMID: 19802898 [PubMed - as supplied by publisher]

  • A Remarkable Base-Stabilized Bis(silylene) with a Silicon(I)-Silicon(I) Bond. Sen SS, Jana A, Roesky HW, Schulzke C. Angew Chem Int Ed Engl. 2009 Oct 2. [Epub ahead of print] No abstract available. PMID: 19802861 [PubMed - as supplied by publisher]

  • "Hot standards" for the thermoacidophilic archaeon Sulfolobus solfataricus. Zaparty M, Esser D, Gertig S, Haferkamp P, Kouril T, Manica A, Pham TK, Reimann J, Schreiber K, Sierocinski P, Teichmann D, van Wolferen M, von Jan M, Wieloch P, Albers SV, Driessen AJ, Klenk HP, Schleper C, Schomburg D, van der Oost J, Wright PC, Siebers B. Extremophiles. 2009 Oct 4. [Epub ahead of print] PMID: 19802714 [PubMed - as supplied by publisher]

  • Controlled thinning and surface smoothening of silicon nanopillars. Kalem S, Werner P, Nilsson B, Talalaev VG, Hagberg M, Arthursson O, Södervall U. Nanotechnology. 2009 Oct 5;20(44):445303. [Epub ahead of print] PMID: 19801781 [PubMed - as supplied by publisher]

  • Adsorption of small NaCl clusters on surfaces of silicon nanostructures. Amsler M, Alireza Ghasemi S, Goedecker S, Neelov A, Genovese L. Nanotechnology. 2009 Oct 5;20(44):445301. [Epub ahead of print] PMID: 19801776 [PubMed - as supplied by publisher]

  • Modeling and analysis of nanoscale interaction forces between Acidithiobacillus ferrooxidans and AFM tip. Chandraprabha MN, Somasundaran P, Natarajan KA. Colloids Surf B Biointerfaces. 2009 Sep 8. [Epub ahead of print] PMID: 19800769 [PubMed - as supplied by publisher]

  • Surface transformation of silicon-doped hydroxyapatite immersed in culture medium under dynamic and static conditions. Silva HM, Mateescu M, Ponche A, Damia C, Champion E, Soares G, Anselme K. Colloids Surf B Biointerfaces. 2009 Sep 15. [Epub ahead of print] PMID: 19800204 [PubMed - as supplied by publisher]

  • Free-Standing Lipid Bilayers in Silicon Chips-Membrane Stabilization Based on Microfabricated Apertures with a Nanometer-Scale Smoothness. Hirano-Iwata A, Aoto K, Oshima A, Taira T, Yamaguchi RT, Kimura Y, Niwano M. Langmuir. 2009 Oct 2. [Epub ahead of print] PMID: 19799400 [PubMed - as supplied by publisher]

  • Silicon-Bismuth and Germanium-Bismuth Clusters of High Stability. Zdetsis AD. J Phys Chem A. 2009 Oct 2. [Epub ahead of print] PMID: 19799391 [PubMed - as supplied by publisher]

  • [Electroluminescence from a Mn2+ activated SiO2 : Si film on N(+)-Si substrate] Wen J, Chen T, Ran GZ. Guang Pu Xue Yu Guang Pu Fen Xi. 2009 Jul;29(7):1736-9. Chinese. PMID: 19798929 [PubMed - in process]

  • Optical properties of Al2O3 thin films grown by atomic layer deposition. Kumar P, Wiedmann MK, Winter CH, Avrutsky I. Appl Opt. 2009 Oct 1;48(28):5407-12. doi: 10.1364/AO.48.005407. PMID: 19798382 [PubMed - in process]

  • Probing the microenvironment of surface-attached pyrene formed by a thermo-responsive oligomer. Lü F, Fang Y, Blanchard GJ. Spectrochim Acta A Mol Biomol Spectrosc. 2009 Sep 10. [Epub ahead of print] PMID: 19796986 [PubMed - as supplied by publisher]

  • Characterization of chemical bonding in ion-implanted polymers by means of mid-infrared reflectivity. Ivanov VG, Hadjichristov G, Faulques E. Appl Spectrosc. 2009 Sep;63(9):1022-6. PMID: 19796484 [PubMed - in process]

  • Effect of the Nd:YAG and the Er:YAG Laser on the Adhesive-Dentin Interface: A Scanning Electron Microscopy study. Ghiggi PC, Dall Agnol RJ, Júnior LH, Borges GA, Spohr AM. Photomed Laser Surg. 2009 Oct 1. [Epub ahead of print] PMID: 19795996 [PubMed - as supplied by publisher]

  • Fluorinated Silicon Surfaces under Mixed Surfactants: Resistance to Nonspecific Protein Adsorption for Biosensing. Hu K, Gao Y, Zhou W, Lian J, Li F, Chen Z. Langmuir. 2009 Oct 1. [Epub ahead of print] PMID: 19795867 [PubMed - as supplied by publisher]

 

 

 

 

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