High Purity Si Slugs
|Product||Product Code||Request Quote|
|(2N) 99% Silicon Slugs||SI-M-02-SL||Request Quote|
|(3N) 99.9% Silicon Slugs||SI-M-03-SL||Request Quote|
|(4N) 99.99% Silicon Slugs||SI-M-04-SL||Request Quote|
|(5N) 99.999% Silicon Slugs||SI-M-05-SL||Request Quote|
|Formula||CAS No.||PubChem CID||MDL No.||EC No||Beilstein
|PROPERTIES||Mol. Wt.||Appearance||Density||Tensile Strength||Melting Point||Boiling Point||Thermal Conductivity||Electrical Resistivity||Eletronegativity||Specific Heat||Heat of Vaporization||Heat of Fusion||MSDS|
|28.08||Silvery||2330 kg/m³||N/A||1414 °C||2900 °C||1.49 W/cm/K @ 298.2 K||3-4 microhm-cm @ 0°C||1.8 Paulings||0.168 Cal/g/K @ 25°C||40.6 K-Cal/gm atom at 2355 °C||9.47 Cal/gm mole||Safety Data Sheet|
American Elements specializes in producing high purity uniform shaped Silicon Slugs with the highest possible density and smallest possible average grain sizes for use in semiconductor, Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes including Thermal and Electron Beam (E-Beam) Evaporation, Low Temperature Organic Evaporation, Atomic Layer Deposition (ALD), Metallic-Organic and Chemical Vapor Deposition (MOCVD). Our standard Slug sizes range from 1/8" x 1/8" to 1/4" x 1/4" and 3 mm diameter. We can also provide Slugs outside this range for ultra high purity thin film applications, such as fuel cells and solar energy layers. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar, or plate form, as well as other machined shapes and through other processes such as nanoparticles () and in the form of solutions and organometallics. See safety data and research below and pricing/lead time above. We also produce Silicon as rod, ingot, powder, pieces, disc, granules, wire, and in compound forms, such as oxide. Other shapes are available by request.
Silicon (atomic symbol: Si, atomic number: 14) is a Block P, Group 14, Period 3 element with an atomic weight of 28.085. The number of electrons in each of Silicon's shells is 2, 8, 4 and its electron configuration is [Ne] 3s2 3p2. The silicon atom has a radius of 111 pm and a Van der Waals radius of 210 pm. Silicon was discovered and first isolated by Jöns Jacob Berzelius in 1823. Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The metalloid is rarely found in pure crystal form and is usually produced from the iron-silicon alloy ferrosilicon. Silica (or silicon dioxide), as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Ultra high purity silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics industry.The name Silicon originates from the Latin word silex which means flint or hard stone. For more information on silicon, including properties, safety data, research, and American Elements' catalog of silicon products, visit the Silicon element page.
HEALTH, SAFETY & TRANSPORTATION INFORMATION
|Material Safety Data Sheet||MSDS|
|Transport Information||UN 1346 4.1/PG 3|
|Globally Harmonized System of
Classification and Labelling (GHS)
|PACKAGING SPECIFICATIONS FOR BULK & RESEARCH QUANTITIES|
|Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.|
Recent Research & Development for Silicon
- Gradient poly(styrene-co-polyglycidol) grafts via silicon surface-initiated AGET ATRP. Gosecka M, Pietrasik J, Decorse P, Glebocki B, Chehimi MM, Slomkowski S, Basinska T. Langmuir. 2015 Apr 14. : Langmuir
- Lithiation of Silicon Nanoparticles Confined in Carbon Nanotubes. Yu WJ, Liu C, Hou PX, Zhang L, Shan XY, Li F, Cheng HM. ACS Nano. 2015 Apr 13. : ACS Nano
- Origins of conductivity improvement in fluoride-enhanced silicon doping of ZnO films. Rashidi N, Vai AT, Kuznetsov VL, Dilworth JR, Edwards PP. Chem Commun (Camb). 2015 Apr 16. : Chem Commun (Camb)
- The photodynamic antibacterial effects of silicon phthalocyanine (pc) 4. Dimaano ML, Rozario C, Nerandzic MM, Donskey CJ, Lam M, Baron ED. Int J Mol Sci. 2015 Apr 8: Int J Mol Sci
- Uniformity and passivation research of Al2O3 film on silicon substrate prepared by plasma-enhanced atom layer deposition. Jia E, Zhou C, Wang W. Nanoscale Res Lett. 2015 Mar 13: Nanoscale Res Lett
- High-Speed GaN/GaInN nanowire array LED on Silicon (111). Köster R, Sager D, Quitsch WA, Pfingsten O, Poloczek A, Blumenthal S, Keller G, Prost W, Bacher G, Tegude FJ. Nano Lett. 2015 Mar 10.
- Carbon p Electron Ferromagnetism in Silicon Carbide. Wang Y, Liu Y, Wang G, Anwand W, Jenkins CA, Arenholz E, Munnik F, Gordan OD, Salvan G, Zahn DR, Chen X, Gemming S, Helm M, Zhou S. Sci Rep. 2015 Mar 11
- Complete magnesiothermic reduction reaction of vertically aligned mesoporous silica channels to form pure silicon nanoparticles. Kim KH, Lee DJ, Cho KM, Kim SJ, Park JK, Jung HT. Sci Rep. 2015 Mar 11
- Comparative toxicity of silicon dioxide, silver and iron oxide nanoparticles after repeated oral administration to rats. Yun JW, Kim SH, You JR, Kim WH, Jang JJ, Min SK, Kim HC, Chung DH, Jeong J, Kang BC, Che JH. J Appl Toxicol. 2015 Mar 6.
- Sub-Parts Per Million NO2 Chemi-Transistor Sensors Based on Composite Porous Silicon/Gold Nanostructures Prepared by Metal-Assisted Etching. Sainato M, Strambini LM, Rella S, Mazzotta E, Barillaro G. ACS Appl Mater Interfaces. 2015 Mar 16.