Silicon Slugs

High Purity Si Slugs
CAS 7440-21-3


Product Product Code Order or Specifications
(2N) 99% Silicon Slugs SI-M-02-SL Contact American Elements
(3N) 99.9% Silicon Slugs SI-M-03-SL Contact American Elements
(4N) 99.99% Silicon Slugs SI-M-04-SL Contact American Elements
(5N) 99.999% Silicon Slugs SI-M-05-SL Contact American Elements

CHEMICAL
IDENTIFIER
Formula CAS No. PubChem SID PubChem CID MDL No. EC No Beilstein
Re. No.
SMILES
Identifier
InChI
Identifier
InChI
Key
Si 7440-21-3 24882537 5461123 MFCD00085311 231-130-8 N/A [SiH4] InChI=1S/Si XUIMIQQOPSSXEZ-UHFFFAOYSA-N

PROPERTIES Mol. Wt. Appearance Density Tensile Strength Melting Point Boiling Point Thermal Conductivity Electrical Resistivity Eletronegativity Specific Heat Heat of Vaporization Heat of Fusion MSDS
28.08 Silvery 2330 kg/m³ N/A 1414 °C 2900 °C 1.49 W/cm/K @ 298.2 K 3-4 microhm-cm @ 0°C 1.8 Paulings 0.168 Cal/g/K @ 25°C 40.6 K-Cal/gm atom at 2355 °C 9.47 Cal/gm mole Safety Data Sheet

American Elements specializes in producing high purity uniform shaped Silicon Slugs with the highest possible density High Purity Slugsand smallest possible average grain sizes for use in semiconductor, Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes including Thermal and Electron Beam (E-Beam) Evaporation, Low Temperature Organic Evaporation, Atomic Layer Deposition (ALD), Metallic-Organic and Chemical Vapor Deposition (MOCVD). Our standard Slug sizes range from 1/8" x 1/8" to 1/4" x 1/4" and 3 mm diameter. We can also provide Slugs outside this range for ultra high purity thin film applications, such as fuel cells and solar energy layers. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles (See also application discussion at Nanotechnology Information and at Quantum Dots) and in the form of solutions and organometallics. See safety data and research below and pricing/lead time above. We also produce Silicon as rod, ingot, powder, pieces, disc, granules, wire, and in compound forms, such as oxide. Other shapes are available by request.

Silicon (Si) atomic and molecular weight, atomic number and elemental symbolSilicon (atomic symbol: Si, atomic number: 14) is a Block P, Group 14, Period 3 element with an atomic weight of 28.085. Silicon Bohr MoleculeThe number of electrons in each of Silicon's shells is 2, 8, 4 and its electron configuration is [Ne] 3s2 3p2. The silicon atom has a radius of 111 pm and a Van der Waals radius of 210 pm. Silicon was discovered and first isolated by Jöns Jacob Berzelius in 1823. Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The metalloid is rarely found in pure crystal form and is usually produced from the iron-silicon alloy Ferrosilicon.Elemental Silicon Silica (or silicon oxide), as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Ultra high purity silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics industry.The name Silicon originates from the Latin word "silex" which means flint or hard stone. For more information on silicon, including properties, safety data, research, and American Elements' catalog of silicon products, visit the Silicon Information Center.


HEALTH, SAFETY & TRANSPORTATION INFORMATION
Material Safety Data Sheet MSDS
Signal Word Warning
Hazard Statements H228
Hazard Codes F
Risk Codes 11
Safety Precautions 16-33-36
RTECS Number VW0400000
Transport Information UN 1346 4.1/PG 3
WGK Germany 2
Globally Harmonized System of
Classification and Labelling (GHS)
Flame-Flammables        

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PACKAGING SPECIFICATIONS FOR BULK & RESEARCH QUANTITIES
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.


Have a Question? Ask a Chemical Engineer or Material Scientist
Request an MSDS or Certificate of Analysis





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Production Catalog Available in 36 Countries & Languages


Recent Research & Development for Silicon

  • El-Sayed Y. El-Zaiat, Gamal M. Youssef, Dispersive parameters for complex refractive index of p- and n-type silicon from spectrophotometric measurements in spectral range 200–2500 nm, Optics & Laser Technology, Volume 65, January 2015
  • Ali Ghafarinazari, Masoud Mozafari, A systematic study on metal-assisted chemical etching of high aspect ratio silicon nanostructures, Journal of Alloys and Compounds, Volume 616, 15 December 2014
  • Matt Pharr, Zhigang Suo, Joost J. Vlassak, Variation of stress with charging rate due to strain-rate sensitivity of silicon electrodes of Li-ion batteries, Journal of Power Sources, Volume 270, 15 December 2014
  • Jan Kaspar, Magdalena Graczyk-Zajac, Stefan Lauterbach, Hans-Joachim Kleebe, Ralf Riedel, Silicon oxycarbide/nano-silicon composite anodes for Li-ion batteries: Considerable influence of nano-crystalline vs. nano-amorphous silicon embedment on the electrochemical properties, Journal of Power Sources, Volume 269, 10 December 2014
  • Jinho Yang, Rhet C. de Guzman, Steven O. Salley, K.Y. Simon Ng, Bing-Hung Chen, Mark Ming-Cheng Cheng, Plasma enhanced chemical vapor deposition silicon nitride for a high-performance lithium ion battery anode, Journal of Power Sources, Volume 269, 10 December 2014
  • F. Maroni, R. Raccichini, A. Birrozzi, G. Carbonari, R. Tossici, F. Croce, R. Marassi, F. Nobili, Graphene/silicon nanocomposite anode with enhanced electrochemical stability for lithium-ion battery applications, Journal of Power Sources, Volume 269, 10 December 2014
  • Joseph Gonzalez, Ke Sun, Meng Huang, John Lambros, Shen Dillon, Ioannis Chasiotis, Three dimensional studies of particle failure in silicon based composite electrodes for lithium ion batteries, Journal of Power Sources, Volume 269, 10 December 2014
  • Fleur Thissandier, Pascal Gentile, Thierry Brousse, Gérard Bidan, Saïd Sadki, Are tomorrow's micro-supercapacitors hidden in a forest of silicon nanotrees?, Journal of Power Sources, Volume 269, 10 December 2014
  • Jinwei Yin, Dongxu Yao, Yongfeng Xia, Kaihui Zuo, Yuping Zeng, The effect of modified interfaces on the mechanical property of ß-silicon nitride whiskers reinforced Cu matrix composites, Journal of Alloys and Compounds, Volume 615, 5 December 2014
  • Wei Sun, Renzong Hu, Hui Liu, Meiqin Zeng, Lichun Yang, Haihui Wang, Min Zhu, Embedding nano-silicon in graphene nanosheets by plasma assisted milling for high capacity anode materials in lithium ion batteries, Journal of Power Sources, Volume 268, 5 December 2014
  • Hiroyuki Usui, Kazuma Nouno, Yuya Takemoto, Kengo Nakada, Akira Ishii, Hiroki Sakaguchi, Influence of mechanical grinding on lithium insertion and extraction properties of iron silicide/silicon composites, Journal of Power Sources, Volume 268, 5 December 2014
  • Liguo Wang, Fengyou Wang, Xiaodan Zhang, Ning Wang, Yuanjian Jiang, Qiuyan Hao, Ying Zhao, Improving efficiency of silicon heterojunction solar cells by surface texturing of silicon wafers using tetramethylammonium hydroxide, Journal of Power Sources, Volume 268, 5 December 2014
  • Xiao-Qing Bao, Lifeng Liu, Improved photo-stability of silicon nanobelt arrays by atomic layer deposition for efficient photocatalytic hydrogen evolution, Journal of Power Sources, Volume 268, 5 December 2014
  • L. Pizzagalli, A. Charaf-Eddin, S. Brochard, Numerical simulations and modeling of the stability of noble gas atoms in interaction with vacancies in silicon, Computational Materials Science, Volume 95, December 2014
  • P. Tsakiropoulos, On the macrosegregation of silicon in niobium silicide based alloys, Intermetallics, Volume 55, December 2014
  • Nadia Chehata, Adnen Ltaief, Bouraoui Ilahi, Bassem Salem, Abdelaziz Bouazizi, Hassen Maaref, Thierry Baron, Pascal Gentile, Hybrid nanocomposites based on conducting polymer and silicon nanowires for photovoltaic application, Journal of Luminescence, Volume 156, December 2014
  • T. Koyanagi, K. Shimoda, S. Kondo, T. Hinoki, K. Ozawa, Y. Katoh, Irradiation creep of nano-powder sintered silicon carbide at low neutron fluences, Journal of Nuclear Materials, Volume 455, Issues 1–3, December 2014
  • Daxi Guo, Hang Zang, Peng Zhang, Jianqi Xi, Tao Li, Li Ma, Chaohui He, Analysis of primary damage in silicon carbide under fusion and fission neutron spectra, Journal of Nuclear Materials, Volume 455, Issues 1–3, December 2014
  • Bo Liang, Yanping Liu, Yunhua Xu, Silicon-based materials as high capacity anodes for next generation lithium ion batteries, Journal of Power Sources, Volume 267, 1 December 2014
  • Chan Soon Kang, Seoung-Bum Son, Ji Woo Kim, Seul Cham Kim, Yong Seok Choi, Jae Young Heo, Soon-Sung Suh, Young-Ugk Kim, Yeon Yi Chu, Jong Soo Cho, Se-Hee Lee, Kyu Hwan Oh, Electrochemically induced and orientation dependent crack propagation in single crystal silicon, Journal of Power Sources, Volume 267, 1 December 2014