Silicon Slugs

High Purity Si Slugs
CAS 7440-21-3

Product	Product Code	Order or Specifications
(2N) 99% Silicon Slugs	SI-M-02-SL
(3N) 99.9% Silicon Slugs	SI-M-03-SL
(4N) 99.99% Silicon Slugs	SI-M-04-SL
(5N) 99.999% Silicon Slugs	SI-M-05-SL

American Elements specializes in producing high purity uniform shaped Silicon Slugs with the highest possible density and smallest possible average grain sizes for use in semiconductor, Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes including Thermal and Electron Beam (E-Beam) Evaporation, Low Temperature Organic Evaporation, Atomic Layer Deposition (ALD), Metallic-Organic and Chemical Vapor Deposition (MOCVD). Our standard Slug sizes range from 1/8" x 1/8" to 1/4" x 1/4" and 3 mm diameter. We can also provide Slugs outside this range for ultra high purity thin film applications, such as fuel cells and solar energy layers. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles (See also application discussion at Nanotechnology Information and at Quantum Dots) and in the form of solutions and organometallics. See safety data and research below and pricing/lead time above. We also produce Silicon as rod, ingot, powder, pieces, disc, granules, wire, and in compound forms, such as oxide. Other shapes are available by request.

Silicon is a Block P, Group 14, Period 3 element. The number of electrons in each of Silicon's shells is 2, 8, 4 and its electronic configuration is [Ne] 3s² 3p². In its elemental form silicon's CAS number is 7440-21-3. The silicon atom has a radius of 117.6.pm and its Van der Waals radius is 210.pm. Silicon is not toxic but can cause chronic respiratory problems if inhaled as a fine silica or silicate dust. Asbestos silicates are carcinogenic. Silicon is makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The Czochralski process is commonly used to produce single crystals of silicon used for solid-state or semiconductor devices. Silica, as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Silicon is available as metal and compounds with purities from 99% to 99.9999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. Ultra high purity silicon can be doped with boron, gallium, phosphorus , or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics and space-age industries. Hydrogenated amorphous silicon has shown promise in producing economical cells for converting solar energy into electricity; in 2013, silicon nanoparticles created by scientists at the University of Buffalo successfully demonstrated the release of hydrogen, furthering the advancement of green energy technologies. Silcones are important products of silicon. They range from liquids to hard, glasslike solids with many useful properties. Silicon, first discovered by Jons Berzelius in 1823, is rarely found in pure crystal form and is usually produced from the iron-silicon alloy Ferrosilicon. The name Silicon originates from the Latin word "silex" which means flint or hard stone. See Silicon research below.

HEALTH, SAFETY & TRANSPORTATION INFORMATION
Material Safety Data Sheet	MSDS
Signal Word	Warning
Hazard Statements	H228
Hazard Codes	F
Risk Codes	11
Safety Precautions	16-33-36
RTECS Number	VW0400000
Transport Information	UN 1346 4.1/PG 3
WGK Germany	2
Globally Harmonized System of Classification and Labelling (GHS)

Production Catalog Available in 36 Countries & Languages

Recent Research & Development for Silicon

• Direct writing anisotropy on crystalline silicon surface by linearly polarized femtosecond laser. Liu P, Jiang L, Hu J, Han W, Lu Y. Opt Lett. 2013 Jun 1;38(11):1969-71. doi: 10.1364/OL.38.001969.
• Silicon-on-insulator integrated source of polarization-entangled photons. Olislager L, Safioui J, Clemmen S, Huy KP, Bogaerts W, Baets R, Emplit P, Massar S. Opt Lett. 2013 Jun 1;38(11):1960-2. doi: 10.1364/OL.38.001960.
• Spectral hole burning in silicon waveguides with a graphene layer on top. Cheng Z, Tsang HK, Xu K, Shi Z. Opt Lett. 2013 Jun 1;38(11):1930-2. doi: 10.1364/OL.38.001930.
• Hybrid III-V/silicon single mode laser with periodic microstructures: erratum. Zhang Y, Qu H, Wang H, Zhang S, Ma S, Qi A, Feng Z, Peng H, Zheng W. Opt Lett. 2013 Jun 1;38(11):1902. doi: 10.1364/OL.38.001902.
• Asymmetric Y junctions in silicon waveguides for on-chip mode-division multiplexing. Driscoll JB, Grote RR, Souhan B, Dadap JI, Lu M, Osgood RM. Opt Lett. 2013 Jun 1;38(11):1854-6. doi: 10.1364/OL.38.001854.
• Deep nonlinear ablation of silicon with a quasi-continuous wave fiber laser at 1070 nm. Yu KX, Wright LG, Webster PJ, Fraser JM. Opt Lett. 2013 Jun 1;38(11):1799-801. doi: 10.1364/OL.38.001799.
• Interfacial Cyclic Fatigue of Atomic-Layer-Deposited Alumina Coatings on Silicon Thin Films. Baumert EK, Pierron ON. ACS Appl Mater Interfaces. 2013 May 30.
• Dosimetric properties of an amorphous silicon EPID for verification of modulated electron radiotherapy. Chatelain C, Vetterli D, Henzen D, Favre P, Morf D, Scheib S, Fix MK, Manser P. Med Phys. 2013 Jun;40(6):061710.
• Thermal conductance calculations of silicon nanowires: comparison with diamond nanowires. Yamamoto K, Ishii H, Kobayashi N, Hirose K. Nanoscale Res Lett. 2013 May 29;8(1):256.
• Interaction of silicon-based quantum dots with gibel carp liver: oxidative and structural modifications. Stanca L, Petrache SN, Serban AI, Staicu AC, Sima C, Munteanu MC, Z Rnescu O, Dinu D, Dinischiotu A. Nanoscale Res Lett. 2013 May 29;8(1):254.
• Silicon nanoparticle based fluorescent biological label via low temperature thermal degradation of chloroalkylsilane. Das P, Saha A, Maity AR, Ray SC, Jana NR. Nanoscale. 2013 May 28.
• Rice husks as a sustainable source of nanostructured silicon for high performance Li-ion battery anodes. Liu N, Huo K, McDowell MT, Zhao J, Cui Y. Sci Rep. 2013 May 29;3:1919. doi: 10.1038/srep01919.
• Contact-Engineered and Void-Involved Silicon/Carbon Nanohybrids as Lithium-Ion-Battery Anodes. Wang B, Li X, Zhang X, Luo B, Zhang Y, Zhi L. Adv Mater. 2013 May 28. doi: 10.1002/adma.201300844.
• Silicon(II) Coordination Chemistry: N-Heterocyclic Carbene Complexes of Si²⁺ and SiI⁺ Filippou AC, Lebedev YN, Chernov O, Stra�mann M, Schnakenburg G. Angew Chem Int Ed Engl. 2013 May 27. doi: 10.1002/anie.201301363.
• Silicon coupled with plasmon nanocavity generates bright visible hot-luminescence. Cho CH, Aspetti CO, Park J, Agarwal R. Nat Photonics. 2013;7:285-289.
• A Silicon Electromechanical Photodetector. Tallur S, Bhave SA. Nano Lett. 2013 May 29.
• Correction to Adsorption and Diffusion of Lithium on Layered Silicon for Li-Ion Storage. Tritsaris GA, Kaxiras E, Meng S, Wang E. Nano Lett. 2013 May 24.
• [The curing behavior of two thermoset resins containing silicon alkynyl group]. Shi S, Kong L, Qi HM, Zhang DH. Guang Pu Xue Yu Guang Pu Fen Xi. 2013 Mar;33(3):647-52.
• Multifunctional porous silicon nanopillar arrays: antireflection, superhydrophobicity, photoluminescence, and surface-enhanced Raman scattering. Kiraly B, Yang S, Huang TJ. Nanotechnology. 2013 Jun 21;24(24):245704. doi: 10.1088/0957-4484/24/24/245704.
• Functionalised porous silicon as a biosensor: emphasis on monitoring cells in vivo and in vitro. Gupta B, Zhu Y, Guan B, Reece PJ, Gooding JJ. Analyst. 2013 May 24.

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