Silicon Dioxide Powder

Spray Dried SiO2
CAS 7631-86-9

Product Product Code Order or Specifications
(2N) 99% Silicon Dioxide Powder SI-OX-02-P Contact American Elements
(3N) 99.9% Silicon Dioxide Powder SI-OX-03-P Contact American Elements
(4N) 99.99% Silicon Dioxide Powder SI-OX-04-P Contact American Elements
(5N) 99.999% Silicon Dioxide Powder SI-OX-05-P Contact American Elements

Formula CAS No. PubChem SID PubChem CID MDL No. EC No IUPAC Name Beilstein
Re. No.
SiO2 7631-86-9 24899661 N/A MFCD00011232 262-373-8 Dioxosilane N/A O=[Si]=O InChI=1S/O2Si/c1-3-2 VYPSYNLAJGMNEJ-UHFFFAOYSA-N

PROPERTIES Compound Formula Mol. Wt. Appearance Melting Point Boiling Point Density

Exact Mass

Monoisotopic Mass Charge MSDS
O2Si 60.09 White Powder 1,600° C
(2,912° F)
2,230° C
(4,046° F)
2533 kg/m-3 59.9668 g/mol 59.967 Da 0 Safety Data Sheet

Oxide IonAmerican Elements specializes in producing spray dry and non-spray dry high purity Silicon Dioxide Powder with the smallest possible average grain sizes for use in preparation of pressed and bonded sputtering targets and in Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes including Thermal and Electron Beam (E-Beam) Evaporation, Low High Purity (99.999%) Silicon Oxide (SiO2)PowderTemperature Organic Evaporation, Atomic Layer Deposition (ALD), Metallic-Organic and Chemical Vapor Deposition (MOCVD). Powders are also useful in any application where high surface areas are desired such as water treatment and in fuel cell and solar applications. Nanoparticles (See also Nanotechnology Information and Quantum Dots) also produce very high surface areas. Our standard Powder particle sizes average in the range of - 325 mesh, - 100 mesh, 10-50 microns and submicron (< 1 micron) and our spray dried powder with binder provides an extremely narrow particle size distribution (PSD) for use in thermal and plasma spray guns and other coating applications. We can also provide many materials in the nanoscale range. We also produce Silicon Dioxide as pellets, pieces, tablets, and sputtering target. Oxide compounds are not conductive to electricity. However, certain perovskite structured oxides are electronically conductive finding application in the cathode of solid oxide fuel cells and oxygen generation systems. See research below. Other shapes are available by request.

Silicon (Si) atomic and molecular weight, atomic number and elemental symbolSilicon (atomic symbol: Si, atomic number: 14) is a Block P, Group 14, Period 3 element with an atomic weight of 28.085. Silicon Bohr MoleculeThe number of electrons in each of Silicon's shells is 2, 8, 4 and its electron configuration is [Ne] 3s2 3p2. The silicon atom has a radius of 111 pm and a Van der Waals radius of 210 pm. Silicon was discovered and first isolated by Jöns Jacob Berzelius in 1823. Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The metalloid is rarely found in pure crystal form and is usually produced from the iron-silicon alloy Ferrosilicon.Elemental Silicon Silica (or silicon oxide), as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Ultra high purity silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics industry.The name Silicon originates from the Latin word "silex" which means flint or hard stone. For more information on silicon, including properties, safety data, research, and American Elements' catalog of silicon products, visit the Silicon Information Center.

Exclamation Mark-Acute Toxicity Health Hazard      

Quartz, silane, dioxo, Silicon (IV) Oxide, Cristobalite, Silica, Crystalline silica, Dioxosilane, Sand

Show Me MORE Forms of Silicon

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.

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Production Catalog Available in 36 Countries & Languages

Recent Research & Development for Silicon

  • Wei Sun, Renzong Hu, Hui Liu, Meiqin Zeng, Lichun Yang, Haihui Wang, Min Zhu, Embedding nano-silicon in graphene nanosheets by plasma assisted milling for high capacity anode materials in lithium ion batteries, Journal of Power Sources, Volume 268, 5 December 2014
  • Hiroyuki Usui, Kazuma Nouno, Yuya Takemoto, Kengo Nakada, Akira Ishii, Hiroki Sakaguchi, Influence of mechanical grinding on lithium insertion and extraction properties of iron silicide/silicon composites, Journal of Power Sources, Volume 268, 5 December 2014
  • Liguo Wang, Fengyou Wang, Xiaodan Zhang, Ning Wang, Yuanjian Jiang, Qiuyan Hao, Ying Zhao, Improving efficiency of silicon heterojunction solar cells by surface texturing of silicon wafers using tetramethylammonium hydroxide, Journal of Power Sources, Volume 268, 5 December 2014
  • Xiao-Qing Bao, Lifeng Liu, Improved photo-stability of silicon nanobelt arrays by atomic layer deposition for efficient photocatalytic hydrogen evolution, Journal of Power Sources, Volume 268, 5 December 2014
  • T. Koyanagi, K. Shimoda, S. Kondo, T. Hinoki, K. Ozawa, Y. Katoh, Irradiation creep of nano-powder sintered silicon carbide at low neutron fluences, Journal of Nuclear Materials, Volume 455, Issues 1–3, December 2014
  • Daxi Guo, Hang Zang, Peng Zhang, Jianqi Xi, Tao Li, Li Ma, Chaohui He, Analysis of primary damage in silicon carbide under fusion and fission neutron spectra, Journal of Nuclear Materials, Volume 455, Issues 1–3, December 2014
  • Bo Liang, Yanping Liu, Yunhua Xu, Silicon-based materials as high capacity anodes for next generation lithium ion batteries, Journal of Power Sources, Volume 267, 1 December 2014
  • Chan Soon Kang, Seoung-Bum Son, Ji Woo Kim, Seul Cham Kim, Yong Seok Choi, Jae Young Heo, Soon-Sung Suh, Young-Ugk Kim, Yeon Yi Chu, Jong Soo Cho, Se-Hee Lee, Kyu Hwan Oh, Electrochemically induced and orientation dependent crack propagation in single crystal silicon, Journal of Power Sources, Volume 267, 1 December 2014
  • Seunghun Jang, Moonsup Han, RF power control for fabricating amorphous silicon nitride without Si-nanocrystals and its effect on defects and luminescence, Journal of Alloys and Compounds, Volume 614, 25 November 2014
  • Ryota Yanagisawa, Hisayuki Endo, Masafumi Unno, Hideyuki Morimoto, Shin-ichi Tobishima, Effects of organic silicon compounds as additives on charge–discharge cycling efficiencies of lithium in nonaqueous electrolytes for rechargeable lithium cells, Journal of Power Sources, Volume 266, 15 November 2014
  • Vivek Raj Shrestha, Hak-Soon Lee, Yong-Geon Lee, Sang-Shin Lee, Silicon nitride waveguide router enabling directional power transmission, Optics Communications, Volume 331, 15 November 2014
  • Haridas Kumarakuru, Zelalem N. Urgessa, Ezra J. Olivier, Johannes R. Botha, Andre Venter, Johannes H. Neethling, Growth of ZnS-coated ZnO nanorod arrays on (1 0 0) silicon substrate by two-step chemical synthesis, Journal of Alloys and Compounds, Volume 612, 5 November 2014
  • Dong-Joo Kim, Gil-Sung Kim, No-Won Park, Won-Yong Lee, Yumin Sim, Keun-Soo Kim, Maeng-Je Seong, Jung-Hyuk Koh, Chang-Hee Hong, Sang-Kwon Lee, Effect of annealing of graphene layer on electrical transport and degradation of Au/graphene/n-type silicon Schottky diodes, Journal of Alloys and Compounds, Volume 612, 5 November 2014
  • Yong Seok Choi, Matt Pharr, Chan Soon Kang, Seoung-Bum Son, Seul Cham Kim, Kee-Bum Kim, Hyunchul Roh, Se-Hee Lee, Kyu Hwan Oh, Joost J. Vlassak, Microstructural evolution induced by micro-cracking during fast lithiation of single-crystalline silicon, Journal of Power Sources, Volume 265, 1 November 2014
  • Myeongjin Kim, Youngjae Yoo, Jooheon Kim, Synthesis of microsphere silicon carbide/nanoneedle manganese oxide composites and their electrochemical properties as supercapacitors, Journal of Power Sources, Volume 265, 1 November 2014
  • Habib Hamidinezhad, Ali Akbar Ashkarran, Zulkurnain Abdul-Malek, Vertically-tapered silicon nanowire arrays prepared by plasma enhanced chemical vapor deposition: Synthesis, structural characterization and photoluminescence, Materials Science in Semiconductor Processing, Volume 27, November 2014
  • Wenhao Chen, Xiaomei Liu, Miao Li, Chuanqiang Yin, Lang Zhou, On the nature and removal of saw marks on diamond wire sawn multicrystalline silicon wafers, Materials Science in Semiconductor Processing, Volume 27, November 2014
  • Grzegorz Wielgoszewski, Grzegorz Józwiak, Michal Babij, Tomasz Baraniecki, Robert Geer, Teodor Gotszalk, Investigation of thermal effects in through-silicon vias using scanning thermal microscopy, Micron, Volume 66, November 2014
  • Guofang Fan, Yuan Li, Chunguang Hu, Lihua Lei, Dong Zhao, Hongyu Li, Zhen Zhen, A novel concept of acousto-optic ring frequency shifters on silicon-on-insulator technology, Optics & Laser Technology, Volume 63, November 2014
  • Liang Cao, Abdelsalam Aboketaf, Zihao Wang, Stefan Preble, Hybrid amorphous silicon (a-Si:H)–LiNbO3 electro-optic modulator, Optics Communications, Volume 330, 1 November 2014