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Silicon Titanium Nitride
Product Product Code Order or Specifications
(2N) 99% Silicon Titanium Nitride SITI-N-02 Contact American Elements
(3N) 99.9% Silicon Titanium Nitride SITI-N-03 Contact American Elements
(4N) 99.99% Silicon Titanium Nitride SITI-N-04 Contact American Elements
(5N) 99.999% Silicon Titanium Nitride SITI-N-05 Contact American Elements
Nitride IonSilicon Titanium Nitride is generally immediately available in most volumes. High purity, submicron and nanopowder forms may be considered.American Elements produces to many standard grades when applicable, including Mil Spec (military grade); ACS, Reagent and Technical Grade; Food, Agricultural and Pharmaceutical Grade; Optical Grade, USP and EP/BP (European Pharmacopoeia/British Pharmacopoeia)and follows applicable ASTM testing standards.Typical and custom packaging is available. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.

Silicon(Si) atomic and molecular weight, atomic number and elemental symbolSilicon is a Block P, Group 14, Period 3 element. The number of electrons in each of Silicon's shells is 2, 8, 4 and its electronic configuration is [Ne] 3s2 3p2. In its elemental form silicon's CAS number is 7440-21-3. The silicon atom has a radius of 117.6.pm and it's Van der Waals radius is 210.pm. Silicon is not toxic but can cause chronic respiratory problems if inhaled as a fine silica or silicate dust. Asbestos silicates are carcinogenic. Silicon isElemental Silicon one of man's most useful elements. It makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, being exceeded only by oxygen. The Czochralski process is commonly used to produce single crystals of silicon used for solid-state or semiconductor devices. Silica, as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Silicon is available as metal and compounds with purities from 99% to 99.9999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. Ultra high purity silicon can be doped with boron, gallium, phosphorus , or arsenic to produce silicon for use in Silicon Bohr Moleculetransistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics and space-age industries. Hydrogenated amorphous silicon has shown promise in producing economical cells for converting solar energy into electricity. Silcones are important products of silicon. They range from liquids to hard, glasslike solids with many useful properties. Silicon was first discovered by Jons Berzelius in 1823. The name Silicon originates from the Latin word "silex" which means flint or hard stone. See Silicon research below.

Titanium(Ti) atomic and molecular weight, atomic number and elemental symbolTitanium is a Block D, Group 4, Period 4 element. The number of electrons in each of Titanium's shells is 2, 8, 10, 2 and its electronic configuration is [Ar] 3d2 4s2. In its elemental form titanium's CAS number is 7440-32-6. The titanium atom has a radius of 144.8.pm and it's Van der Waals radius is 200.pm. Titanium metal is not considered to be toxic although titanium as metal shavings or powder is considered a fire hazard. In its metallic form it is not only very strong and light weight, but also highly resistant to corrosion. Thus it can be found in numerous aerospace and military applications. In its oxide form it used in low grades to produce a white pigment. Titanium is the bases for numerous commercially essential compound groups, such as titanium titanates in electronic and di-electric formulations and in crystal growth for ruby and sapphire lasers. Titanium information, including Technical Data, Safety Data and its high purity properties, research, applications and other useful facts are discussed here. Scientific facts such as the atomic structure, ionization energy , abundance on Earth, conductivity and thermal properties are included. Titanium was first discovered by William Gregor in 1791.

Formula CAS No. Appearance Molecular Weight
AlN 24304-00-5   40.99
PRODUCT CATALOG News Foil Submicron & Nanopowder Tolling Ultra High Purity Sputtering Target Crystal Growth Rod, Plate, Powder, etc. Home

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Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.

 

 

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Recent Research & Development for Silicon

  • Desymmetrization of 7-dimethylphenylsilylcycloheptatriene. Towards the synthesis of new aminocycloheptitols. Girard E, Desvergnes V, Tarnus C, Landais Y. Org Biomol Chem. 2010 Oct 13. [Epub ahead of print]PMID: 20941452 [PubMed - as supplied by publisher]Related citations

  • Enzyme-functionalized polymer brush films on the inner wall of silicon-glass microreactors with tunable biocatalytic activity. Costantini F, Benetti EM, Reinhoudt DN, Huskens J, Vancso GJ, Verboom W. Lab Chip. 2010 Oct 13. [Epub ahead of print]PMID: 20941436 [PubMed - as supplied by publisher]Related citations

  • Wavelength-tunable excited-state absorption and optical limiting effects in the Q band region based on silicon phthalocyanine oligomers. Ishii K, Sakai N. Phys Chem Chem Phys. 2010 Oct 13. [Epub ahead of print]PMID: 20941425 [PubMed - as supplied by publisher]Related citations

  • Role of near-field enhancement in plasmonic laser nanoablation using gold nanorods on a silicon substrate. Harrison RK, Ben-Yakar A. Opt Express. 2010 Oct 11;18(21):22556-71. doi: 10.1364/OE.18.022556.PMID: 20941153 [PubMed - in process]Related citations

  • Ultrafast all-optical modulator with femtojoule absorbed switching energy in silicon-on-insulator. Schönenberger S, Stöferle T, Moll N, Mahrt RF, Dahlem MS, Wahlbrink T, Bolten J, Mollenhauer T, Kurz H, Offrein BJ. Opt Express. 2010 Oct 11;18(21):22485-96. doi: 10.1364/OE.18.022485.PMID: 20941147 [PubMed - in process]Related citations

  • The observation of super-long range surface plasmon polaritons modes and its application as sensory devices. Zhang XL, Song JF, Lo GQ, Kwong DL. Opt Express. 2010 Oct 11;18(21):22462-70. doi: 10.1364/OE.18.022462.PMID: 20941145 [PubMed - in process]Related citations

  • Silicon photonic temperature sensor?employing a ring resonator manufactured?using a standard CMOS process. Kim GD, Lee HS, Park CH, Lee SS, Lim BT, Bae HK, Lee WG. Opt Express. 2010 Oct 11;18(21):22215-21. doi: 10.1364/OE.18.022215.PMID: 20941123 [PubMed - in process]Related citations

  • Highly efficient nonlinearity reduction in silicon-on-insulator waveguides using vertical slots. Yue Y, Zhang L, Wang J, Beausoleil RG, Willner AE. Opt Express. 2010 Oct 11;18(21):22061-6. doi: 10.1364/OE.18.022061.PMID: 20941107 [PubMed - in process]Related citations

  • Quantitative evaluation of boron-induced disorder in multilayers containing silicon nanocrystals in an oxide matrix designed for photovoltaic applications. Zatryb G, Podhorodecki A, Hao XJ, Misiewicz J, Shen YS, Green MA. Opt Express. 2010 Oct 11;18(21):22004-9. doi: 10.1364/OE.18.022004.PMID: 20941101 [PubMed - in process]Related citations

  • Discrete parametric band conversion in silicon for mid-infrared applications. Tien EK, Huang Y, Gao S, Song Q, Qian F, Kalyoncu SK, Boyraz O. Opt Express. 2010 Oct 11;18(21):21981-9. doi: 10.1364/OE.18.021981.PMID: 20941099 [PubMed - in process]Related citations

  • Split of surface plasmon resonance of gold nanoparticles on silicon substrate: a study of dielectric functions. Zhu S, Chen TP, Cen ZH, Goh ES, Yu SF, Liu YC, Liu Y. Opt Express. 2010 Oct 11;18(21):21926-31. doi: 10.1364/OE.18.021926.PMID: 20941092 [PubMed - in process]Related citations

  • Solution-processed photodetectors from colloidal silicon nano/micro particle composite. Tu CC, Tang L, Huang J, Voutsas A, Lin LY. Opt Express. 2010 Oct 11;18(21):21622-7. doi: 10.1364/OE.18.021622.PMID: 20941060 [PubMed - in process]Related citations

  • FDTD modeling of anisotropic nonlinear optical phenomena in silicon waveguides. Dissanayake CM, Premaratne M, Rukhlenko ID, Agrawal GP. Opt Express. 2010 Sep 27;18(20):21427-48. doi: 10.1364/OE.18.021427.PMID: 20941040 [PubMed - in process]Related citations

  • Multi-channel WDM RZ-to-NRZ format conversion at 50 Gbit/s based on single silicon microring resonator. Ding Y, Peucheret C, Pu M, Zsigri B, Seoane J, Liu L, Xu J, Ou H, Zhang X, Huang D. Opt Express. 2010 Sep 27;18(20):21121-30. doi: 10.1364/OE.18.021121.PMID: 20941008 [PubMed - in process]Related citations

  • Hybrid plasmon/dielectric waveguide for integrated silicon-on-insulator optical elements. Flammer PD, Banks JM, Furtak TE, Durfee CG, Hollingsworth RE, Collins RT. Opt Express. 2010 Sep 27;18(20):21013-23. doi: 10.1364/OE.18.021013.PMID: 20940996 [PubMed - in process]Related citations

  • Tunable photonic crystal based on?capillary attraction and repulsion. Chan CT, Yeh JA. Opt Express. 2010 Sep 27;18(20):20894-9. doi: 10.1364/OE.18.020894.PMID: 20940984 [PubMed - in process]Related citations

  • Tailoring the dispersion behavior of silicon nanophotonic slot waveguides. Mas S, Caraquitena J, Galán JV, Sanchis P, Martí J. Opt Express. 2010 Sep 27;18(20):20839-44. doi: 10.1364/OE.18.020839.PMID: 20940978 [PubMed - in process]Related citations

  • High performance nanophotonic circuits based on partially buried horizontal slot waveguides. Xiong C, Pernice WH, Li M, Tang HX. Opt Express. 2010 Sep 27;18(20):20690-8. doi: 10.1364/OE.18.020690.PMID: 20940965 [PubMed - in process]Related citations

  • Label-free optical biosensing using a horizontal air-slot SiN(x) microdisk resonator. Lee S, Eom SC, Chang JS, Huh C, Sung GY, Shin JH. Opt Express. 2010 Sep 27;18(20):20638-44. doi: 10.1364/OE.18.020638.PMID: 20940958 [PubMed - in process]Related citations

  • Flattened dispersion in silicon slot waveguides. Zhang L, Yue Y, Beausoleil RG, Willner AE. Opt Express. 2010 Sep 13;18(19):20529-34. doi: 10.1364/OE.18.020529.PMID: 20940946 [PubMed - in process]Related citations

 

Recent Research & Development for Nitride

  • Silicon nitride as a versatile growth substrate for microspectroscopic imaging and mapping of individual cells. Carter EA, Rayner BS, McLeod AI, Wu LE, Marshall CP, Levina A, Aitken JB, Witting PK, Lai B, Cai Z, Vogt S, Lee YC, Chen CI, Tobin MJ, Harris HH, Lay PA. Mol Biosyst. 2010 May 6. [Epub ahead of print] PubMed PMID: 20445927.

  • Electrically Facilitated Translocations of Proteins through Silicon Nitride Nanopores: Conjoint and Competitive Action of Diffusion, Electrophoresis, and Electroosmosis. Firnkes M, Pedone D, Knezevic J, Do¨blinger M, Rant U. Nano Lett. 2010 May 3. [Epub ahead of print] PubMed PMID: 20438117.

  • Enhanced Thermal Conductivity of Polyimide Films via a Hybrid of Micro- and Nano-Sized Boron Nitride. Li TL, Hsu SL. J Phys Chem B. 2010 Apr 30. [Epub ahead of print] PubMed PMID: 20433158.

  • Novel properties of boron nitride nanotubes encapsulated with Fe, Co, and Ni nanoclusters. Ghosh S, Nigam S, Das GP, Majumdar C. J Chem Phys. 2010 Apr 28;132(16):164704. PubMed PMID: 20441302.

  • High-pressure in situ structure measurement of low-Z noncrystalline materials with a diamond-anvil cell by an x-ray diffraction method. Sato T, Funamori N, Kikegawa T. Rev Sci Instrum. 2010 Apr;81(4):043906. PubMed PMID: 20441349.

  • Theory of nitride oxide adsorption on transition metal (111) surfaces: a first-principles investigation. Zeng ZH, Da Silva JL, Li WX. Phys Chem Chem Phys. 2010 Mar 14;12(10):2459-70. Epub 2010 Jan 26. PubMed PMID: 20449360.

  • Carbon-doped zigzag boron nitride nanoribbons with widely tunable electronic and magnetic properties: insight from density functional calculations. Tang S, Cao Z. Phys Chem Chem Phys. 2010 Mar 14;12(10):2313-20. Epub 2010 Jan 21. PubMed PMID: 20449344.

  • A new system for synthesis of high quality nonpolar GaN thin films. Li G, Shih SJ, Fu Z. Chem Commun (Camb). 2010 Feb 28;46(8):1206-8. Epub 2009 Dec 10. PubMed PMID: 20449251.

  • The wear properties and adhesion strength of the diamond-like carbon film coated on SUS, Ti and Ni-Ti with plasma pre-treatment. Ozeki K, Masuzawa T, Hirakuri KK. Biomed Mater Eng. 2010 Jan 1;20(1):21-35. PubMed PMID: 20448301.

  • Synthesis and characterisation of the quaternary nitride-fluoride Ce2MnN3F(2-delta). Headspith DA, Sullivan E, Greaves C, Francesconi MG. Dalton Trans. 2009 Nov 14;(42):9273-9. Epub 2009 Sep 4. PubMed PMID: 20449206.

     

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