SrLaGaO4

Strontium is a Block S, Group 2, Period 5 element. The number of electrons in each of Strontium's shells is 2, 8, 18, 8, 2 and its electronic configuration is [Kr] 5s². In its elemental form strontium's CAS number is 7440-24-6. The strontium atom has a radius of 215.1.pm and it's Van der Waals radius is 200.pm. The non-radioactive isotopes of Strontium are not toxic. Strontium has low tech applications as an additive to flares and pyrotechnics because of the bright crimson flame produced by its salts. Strontium is available as metal and compounds with purities from 99% to 99.999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. It also has many high technology applications because of its high refractive index as a titanate in glass, as a "getter" in electron tubes and as a dopant for numerous perovskite formulations to produce cathodes for oxygen generation or solid oxide fuel cells. Historically the primary use of strontium was to produce CRT glass for color television and computer tubes. Strontium was first discovered by A. Crawford in 1790. Strontium was named after the Scottish town it was discovered in, Strontian. See Strontium research below.

Lanthanum is a Block F, Group 3, Period 6 element. The number of electrons in each of Lanthanum's shells is 2, 8, 18, 18, 9, 2 and its electronic configuration is [Xe] 5d¹ 6s². In its elemental form lanthanum 's CAS number is 7439-91-0. The lanthanum atom has a radius of 187.pm and it's Van der Waals radius is 200.pm. Lanthanum and compounds of Lanthanum are somewhat toxic. Lanthanum is one of the products manufactured and distributed under the tradename AE Rare Earths. Lanthanum is the first element in the rare earth or lanthanide series. It is the model for all the other trivalent rare earths. After cerium, it is the second most abundant of the rare earths. Lanthanum is available as metal and compounds with purities from 99% to 99.999% (ACS grade to ultra high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder.Lanthanum-rich lanthanide compositions have been used extensively for cracking reactions in FCC catalysts, especially to manufacture low-octane fuel for heavy crude oil. The name Lanthanum originates from the Greek word Lanthaneia which means 'To lie hidden'. See Lanthanum research below.

Gallium is a Block P, Group 13, Period 4 element. The number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electronic configuration is [Ar] 3d¹⁰ 4s² 4p¹. In its elemental form gallium's CAS number is 7440-55-3. The gallium atom has a radius of 122.1.pm and it's Van der Waals radius is 187.pm. Gallium is not toxic. Gallium is one of three elements that naturally occur as a liquid at room temperature. The other two are mercury and cesium. The application of gallium that has received the most attention is the production of semiconducting compounds. Of these, the most important are the compounds of gallium with antimony, arsenic or phosphor. Nowadays gallium arsenide (Ga-As) is undoubtedly the most used. This compound is used in the production of several electronic parts such as diodes and transistors, made for voltage rectification, signal amplification, etc. Other gallium arsenide applications are the semiconductor "lasing" and microwave generation and also in sensors to measure temperature, light or magnetic field. Gallium was first discovered by Hans Christian Oersted in 1825. See Gallium research below.

American Elements semi conducting materials are crystal structures produced from ultra high purity starting materials synthesized by our high purity production facility which includes several large electric muffle furnaces, a tube furnace for hydrogen reduction, 50 gallon glass-lined Pfaudler reactors supported by our analytical laboratory containing X-ray diffraction, SEM, AA, BET surface area, and ICP Spectrometry for trace metals analysis. See a discussion of American Elements Ultra High Purity and Analytical capabilities. See Crystal Growth for processes used to fabricate semiconductor materials, which include:

• Crystal "pulling" by the Czochaiski method for production of semiconductor materials
• Flux growth and gradient freeze
• Directional solidification of fluorites using both the Bridgman-Stockbarger and float zoning techniques