Tantalum Rod

High Purity Ta Rod
CAS 7440-25-7


Product Product Code Order or Specifications
(2N) 99% Tantalum Rod TA-M-02-R Contact American Elements
(3N) 99.9% Tantalum Rod TA-M-03-R Contact American Elements
(4N) 99.99% Tantalum Rod TA-M-04-R Contact American Elements
(5N) 99.999% Tantalum Rod TA-M-05-R Contact American Elements

CHEMICAL
IDENTIFIER
Formula CAS No. PubChem SID PubChem CID MDL No. EC No Beilstein
Re. No.
SMILES
Identifier
InChI
Identifier
InChI
Key
Ta 7440-25-7 24855933 N/A MFCD00011252 231-135-5 N/A [Ta] InChI=1S/Ta GUVRBAGPIYLISA-UHFFFAOYSA-N

PROPERTIES Mol. Wt. Appearance Density Tensile Strength Melting Point Boiling Point Thermal Conductivity Electrical Resistivity Eletronegativity Specific Heat Heat of Vaporization Heat of Fusion MSDS
180.94 Silvery-gray 16.654 gm/cc up to 130,000 psi 2996 °C 5425 °C 0.575 W/cm/K @ 298.2 K 12.45 microhm-cm @ 0°C 1.5 Paulings 0.0334 Cal/g/K @ 25 °C 180 K-Cal/gm atom at 5425°C 7.5 Cal/gm mole Safety Data Sheet

American Elements specializes in producing high purity uniform shaped Tantalum Rod with the highest possible density 99.9+% Ultra High Purity Metallic Rods and smallest possible average grain sizes for use in semiconductor, Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes including Thermal and Electron Beam (E-Beam) Evaporation, Low Temperature Organic Evaporation, Atomic Layer Deposition (ALD), Metallic-Organic and Chemical Vapor Deposition (MOCVD). Our standard Rod sizes range from 1/8" x 1/8" to 1/4" x 1/4" and 3 mm diameter. We can also provide Rod outside this range and deposition materials for specific applications such as fuel cells and solar energy and for thin film deposition on glass or metal substrates. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles (See also application discussion at Nanotechnology Information and at Quantum Dots) and in the form of solutions and organometallics. We have a variety of standard sized rod molds. See safety data and research below and pricing/lead time above. We also produce Tantalum as powder, ingot, pieces, pellets, disc, granules, wire, and in compound forms, such as oxide. Other shapes are available by request.

Tantalum (Ta) atomic and molecular weight, atomic number and elemental symbolTantalum (atomic symbol: Ta, atomic number: 73) is a Block D, Group 5, Period 6 element with an atomic weight of 180.94788. The number of electrons in each of tantalum's shells is [2, 8, 18, 32, 11, 2] and its electron configuration is [Xe] 4f14 5d3 6s2. Tantalum Bohr ModelThe tantalum atom has a radius of 146 pm and a Van der Waals radius of 217 pm Tantalum was first discovered by Anders G. Ekeberg in 1802 in Uppsala, Sweden; however, it was not until 1844 when Heinrich Rose first recognized it as a distinct element. High Purity (99.999%) Tantalum (Ta) Metal In its elemental form, tantalum has a grayish blue appearance. Tantalum is found in the minerals tantalite, microlite, wodginite, euxenite, and polycrase. Due to the close relation of tantalum to niobium in the periodic table, Tantalum's name originates from the Greek word Tantalos meaning Father of Niobe in Greek mythology. For more information on tantalum, including properties, safety data, research, and American Elements' catalog of tantalum products, visit the Tantalum Information Center.


HEALTH, SAFETY & TRANSPORTATION INFORMATION
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PACKAGING SPECIFICATIONS FOR BULK & RESEARCH QUANTITIES
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.


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Recent Research & Development for Tantalum

  • S.F. Liu, H.Y. Fan, C. Deng, X.B. Hao, Y. Guo, Q. Liu, Through-thickness texture in clock-rolled tantalum plate, International Journal of Refractory Metals and Hard Materials, Volume 48, January 2015
  • Youngmoo Kim, Eun-Pyo Kim, Joon-Woong Noh, Sung Ho Lee, Young-Sam Kwon, In Seok Oh, Fabrication and mechanical properties of powder metallurgy tantalum prepared by hot isostatic pressing, International Journal of Refractory Metals and Hard Materials, Volume 48, January 2015
  • Xiao-Yue Tan, Lai-Ma Luo, Ze-Long Lu, Guang-Nan Luo, Xiang Zan, Ji-Gui Cheng, Yu-Cheng Wu, Development of tungsten as plasma-facing materials by doping tantalum carbide nanoparticles, Powder Technology, Volume 269, January 2015
  • Binhua Chu, Da Li, Kuo Bao, Fubo Tian, Defang Duan, Xiaojing Sha, Pugeng Hou, Yunxian Liu, Huadi Zhang, Bingbing Liu, Tian Cui, Ultrahard boron-rich tantalum boride: Monoclinic TaB4, Journal of Alloys and Compounds, Volume 617, 25 December 2014
  • Zaenal Awaludin, Takeyoshi Okajima, Takeo Ohsaka, Preparation of reduced tantalum pentoxide by electrochemical technique for oxygen reduction reaction, Journal of Power Sources, Volume 268, 5 December 2014
  • Haitham Mohammad Abdelaal, Erik Pfeifer, Christina GrĂĽnberg, Bernd Harbrecht, Synthesis of tantalum pentoxide hollow spheres utilizing a sacrificial templating approach, Materials Letters, Volume 136, 1 December 2014
  • Yongsheng Zhou, Pan Jin, Shifu Chen, Yingchun Zhu, Tantalum nitride nanowires: Synthesis and characterization, Materials Letters, Volume 136, 1 December 2014
  • Xiao-Xiang Yu, Christopher R. Weinberger, Gregory B. Thompson, Ab initio investigations of the phase stability in tantalum carbides, Acta Materialia, Volume 80, November 2014
  • R. Govindarajan, M. Keswani, S. Raghavan, Galvanic corrosion characteristics of poly silicon–tantalum nitride couple immersed in dilute HF solutions, Materials Science in Semiconductor Processing, Volume 27, November 2014
  • Wei-Kang Hsieh, Kin-Tak Lam, Shoou-Jinn Chang, Characteristics of tantalum-doped silicon oxide-based resistive random access memory, Materials Science in Semiconductor Processing, Volume 27, November 2014