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Bismuth Telluride
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99.999% Bismuth Telluride Powder
BI-TE-05-P
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99.999% Bismuth Telluride Ingot
BI-TE-05-I
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99.999% Bismuth Telluride Chunk
BI-TE-05-CK
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99.999% Bismuth Telluride Lump
BI-TE-05-L
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99.999% Bismuth Telluride Sputtering Target
BI-TE-05-ST
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99.999% Bismuth Telluride Disc
BI-TE-05-D
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99.999% Bismuth Telluride Plate
BI-TE-05-PL
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Recent research has confirmed that bismuth telluride may significantly increase the speed of microchips and be the basis for the emerging next generation technology know as "Spintronics". Technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.

Bismuth is a Block P, Group 15, Period 6 element. The electronic configuration is [Xe] 4f14 5d10 6s2 6p3. In its elemental form bismuth's CAS number is 7440-69-9. The bismuth atom has a radius of 154.5.pm and it's Van der Waals radius is 200.pm. Bismuth is the most diamagnetic of all metals, and the thermal conductivity is lower than any metal, except mercury. It has a high electrical resistance, and has the highest Hall Effect of any metal (i.e., greatest increase in electrical resistance when placed in a magnetic field). Bismuth expands on solidification. This property makes bismuth alloys particularly suited to the making of sharp castings of objects subject to damage by high temperatures. With other metals such as tin, cadmium , etc., bismuth forms low-melting alloys which are extensively used for safety devices in fire detection and extinguishing systems. Bismuth is used in producing malleable irons and is finding use as a catalyst for making acrylic fibers. When bismuth is heated in air it burns with a blue flame, forming yellow fumes of the oxide. The metal is also used as a thermocoupling material, and has found application as a carrier for 235 U or 233 U fuel in nuclear reactors. Its soluble salts are characterized by forming unsoluble basic salts on the addition of water, a property sometimes used in detection work. Bismuth oxychloride is used extensively in cosmetics. Bismuth was first discovered by Early Man.

Tellurium is a Block P, Group 16, Period 5 element. The electronic configuration is [Kr] 4d10 5s2 5p4. In its elemental form tellurium's CAS number is 13494-80-9. The tellurium atom has a radius of 143.2.pm and it's Van der Waals radius is 206.pm. Tellurium is a p-type semiconductor, and shows greater conductivity in certain directions, depending on alignment of the atoms. It is grown in crystalline form with other elements such as indium telluride. Its conductivity increases slightly with exposure to light which makes many tellurides candidates for solar energy applications. . Tellurium improves the machinability of copper and stainless steel, and its addition to lead decreases the corrosive action of sulfuric acid on lead and improves its strength and hardness. Tellurium is used as a basic ingredient in blasting caps, and is added to cast iron for chill control. Tellurium is used in ceramics. Bismuth telluride has been used in thermoelectric devices. Iron is available as metal and compounds with purities from 99% to 99.999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder.

American Elements semi conducting materials are crystal structures produced from ultra high purity starting materials synthesized by our high purity production facility which includes several large electric muffle furnaces, a tube furnace for hydrogen reduction, 50 gallon glass-lined Pfaudler reactors supported by our analytical laboratory containing X-ray diffraction, SEM, AA, BET surface area, and ICP Spectrometry for trace metals analysis. See a discussion of American Elements Ultra High Purity and Analytical capabilities. See Crystal Growth for processes used to fabricate semiconductor materials, which include:

  • Crystal "pulling" by the Czochaiski method for production of semiconductor materials
  • Flux growth and gradient freeze
  • Directional solidification of fluorites using both the Bridgman-Stockbarger and float zoning techniques
PRODUCT CATALOG Submicron & Nanopowder Tolling Ultra High Purity Sputtering Target Crystal Growth Rod, Plate, Powder, etc.
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Periodic table of the elements science and academic information, elements and advanced materials data, scientific presentations and all pages, designs, concepts, logos, and color schemes herein are the copyrighted proprietary rights and intellectual property of American Elements. American Elements is a U.S. Registered Trademark. © 2001-2009. American Elements. All rights reserved.

 

Recent Research & Development for Tellurium

  • Expression of Aeromonas caviae ST pyruvate dehydrogenase complex components mediate tellurite resistance in Escherichia coli. Castro ME, Molina RC, Díaz WA, Pradenas GA, Vásquez CC. Biochem Biophys Res Commun. 2009 Jan 22. [Epub ahead of print] PMID: 19168030 [PubMed - as supplied by publisher]

  • Chlorine gas sensors using one-dimensional tellurium nanostructures. Sen S, Sharma M, Kumar V, Muthe KP, Satyam PV, Bhatta UM, Roy M, Gaur NK, Gupta SK, Yakhmi JV. Talanta. 2009 Mar 15;77(5):1567-72. Epub 2008 Oct 17. PMID: 19159765 [PubMed - in process]

  • Cloning, purification and characterization of Geobacillus stearothermophilus V uroporphyrinogen-III C-methyltransferase: evaluation of its role in resistance to potassium tellurite in Escherichia coli. Araya MA, Tantaleán JC, Pérez JM, Fuentes DE, Calderón IL, Saavedra CP, Burra R, Chasteen TG, Vásquez CC. Res Microbiol. 2009 Jan 3. [Epub ahead of print] PMID: 19154787 [PubMed - as supplied by publisher]

  • Reversible switching between p- and n-type conduction in the semiconductor Ag10Te4Br3. Nilges T, Lange S, Bawohl M, Deckwart JM, Janssen M, Wiemhöfer HD, Decourt R, Chevalier B, Vannahme J, Eckert H, Weihrich R. Nat Mater. 2009 Feb;8(2):101-8. Epub 2009 Jan 18. PMID: 19151704 [PubMed - in process]

  • New vanadium(IV) and titanium(IV) oxyfluorotellurates(IV): V2Te2O7F2 and TiTeO3F2. Laval JP, Boukharrata NJ. Acta Crystallogr C. 2009 Jan;65(Pt 1):i1-6. Epub 2008 Dec 13. PMID: 19129587 [PubMed]

  • Atomic Layer Deposition of Metal Tellurides and Selenides Using Alkylsilyl Compounds of Tellurium and Selenium. Pore V, Hatanpa¨a¨ T, Ritala M, Leskela¨ M. J Am Chem Soc. 2009 Jan 5. [Epub ahead of print] PMID: 19123860 [PubMed - as supplied by publisher]

  • A convenient alignment approach for x-ray imaging experiments based on laser positioning devices. Da Z, Donovan M, Wu X, Liu H. Med Phys. 2008 Nov;35(11):4907-10. PMID: 19070224 [PubMed - indexed for MEDLINE]

  • CdTe nanocrystals sensitized chemiluminescence and the analytical application. Wang Z, Li J, Liu B, Li J. Talanta. 2009 Jan 15;77(3):1050-6. Epub 2008 Aug 22. PMID: 19064090 [PubMed - indexed for MEDLINE]

  • Synthesis of CdTe nanocrystals with mercaptosuccinic acid as stabilizer. Wang C, Ma Q, Su X. J Nanosci Nanotechnol. 2008 Sep;8(9):4408-14. PMID: 19049034 [PubMed - indexed for MEDLINE]

  • Well-defined stibonic and tellurinic acids. Beckmann J, Finke P, Hesse M, Wettig B. Angew Chem Int Ed Engl. 2008;47(51):9982-4. No abstract available. PMID: 19006136 [PubMed - indexed for MEDLINE]

  • A temperature-driven reversible phase transfer of 2-(diethylamino)ethanethiol-stabilized CdTe nanoparticles. Qin B, Zhao Z, Song R, Shanbhag S, Tang Z. Angew Chem Int Ed Engl. 2008;47(51):9875-8. No abstract available. PMID: 19003838 [PubMed - indexed for MEDLINE]

  • Sonication treatment of CdTe/CdS semiconductor nanocrystals and their bio-application. Lee SJ, Kim KN, Bae PK, Chang HJ, Kim YR, Park JK. Chem Commun (Camb). 2008 Nov 21;(43):5574-6. Epub 2008 Sep 24. PMID: 18997956 [PubMed - indexed for MEDLINE]

  • Synthesis, characterization and oxidizing properties of a diorgano tellurone carrying bulky aromatic substituents. Oba M, Okada Y, Nishiyama K, Shimada S, Ando W. Chem Commun (Camb). 2008 Nov 14;(42):5378-80. Epub 2008 Sep 17. PMID: 18985216 [PubMed - indexed for MEDLINE]

  • Human erythrocyte hemolysis induced by selenium and tellurium compounds increased by GSH or glucose: a possible involvement of reactive oxygen species. Schiar VP, Dos Santos DB, Paixão MW, Nogueira CW, Rocha JB, Zeni G. Chem Biol Interact. 2009 Jan 15;177(1):28-33. Epub 2008 Oct 15. PMID: 18983990 [PubMed - indexed for MEDLINE]

  • Thermal stabilization of tellurium in mineral acids solutions: Use of permanent modifiers for its determination in sulfur by GFAAS. Pedro J, Stripekis J, Bonivardi A, Tudino M. Talanta. 2006 Mar 15;69(1):199-203. Epub 2005 Oct 27. PMID: 18970554 [PubMed - in process]

  • Coprecipitation with yttrium phosphate as a separation technique for iron(III), lead, and bismuth from cobalt, nickel, and copper matrices. Kagaya S, Araki Y, Hirai N, Hasegawa K. Talanta. 2005 Jul 15;67(1):90-7. Epub 2005 Mar 23. PMID: 18970141 [PubMed - in process]

  • The importance of cerium substituted phosphates as cation exchanger-some unique properties and related application potentials. Nilchi A, Khanchi A, Ghanadi Maragheh M. Talanta. 2002 Mar 4;56(3):383-93. PMID: 18968510 [PubMed - in process]

  • Liquid-liquid extraction study of tellurium(IV) with N-n-octylaniline in halide medium and its separation from real samples. Sargar BM, Anuse MA. Talanta. 2001 Sep 13;55(3):469-78. PMID: 18968391 [PubMed - in process]

  • Simultaneous determination of arsenic, antimony, selenium and tin by gas phase molecular absorption spectrometry after two step hydride generation and preconcentration in a cold trap system. Cabredo S, Galbán J, Sanz J. Talanta. 1998 Aug;46(4):631-8. PMID: 18967186 [PubMed - in process]

  • Multielemental speciation of As, Se, Sb and Te by HPLC-ICP-MS. Guerin T, Astruc M, Batel A, Borsier M. Talanta. 1997 Dec 1;44(12):2201-8. PMID: 18966969 [PubMed - in process]

 

 

 

 

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