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Cadmium Selenide/Zinc Sulfide Quantum Dots
CdSe/ZnS Quantum Dots
Product
Product Code
Order or Specifications
Cadmium Selenide/Zinc Sulfide Quantum Dot -530 nm
CDSEZNS-QD-530
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Cadmium Selenide/Zinc Sulfide Quantum Dot -570 nm
CDSEZNS -QD-570
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Cadmium Selenide/Zinc Sulfide Quantum Dot -610 nm
CDSEZNS -QD-610
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American Elements is a manufacturer and supplier specializing in producing Cadmium Selenide/Zinc Sulfide (CdSe/ZnS) Quantum Dots. CdSe/ZnS Quantum Dots are core-shell structured inorganic nanocrystals where an inner core of Cadmium Selenide is encapsulated in an outer core of wider band gap Zinc Selenide. Cadmium Selenide/Zinc Sulfide Quantum Dots exhibit spectra emission ranges from 530 nanometers (nm) to 610 nanometers (nm) wavelengths. They are high luminosity inorganic particles soluble in various organic solutions. Cadmium Selenide/Zinc Sulfide Quantum Dots are nanoparticles of Cadmium Selenide/Zinc Sulfide semiconductor crystals with the novel property of having an extremely narrow emission spectrum (Gaussian Distribution) that is directly proportional to the particle's size. The smaller the particle the more its emission is blue shifted and conversely the larger the particle size, the more its emission is red shifted. Cadmium Selenide/Zinc Sulfide Quantum Dots have the potential to turn light emitting diodes (LED) from merely display devises to illumination devices creating the first solid state lighting sources. technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement. American Elements manufactures quantum dots from several semiconductor materials, including Cadmium Telluride (CdTe), Cadmium Selenide/Zinc Sulfide (CdSe/ZnS), Lead Selenide (PbSe) and Zinc Cadmium Selenide/Zinc Sulfide (ZnCdSe/ZnS) nanoparticles with well-defined peak emission frequencies.

Cadmium is a Block D, Group 12, Period 5 element. The electronic configuration is [Kr] 4d10 5s2. In its elemental form cadmium's CAS number is 7440-43-9. The cadmium atom has a radius of 148.9.pm and it's Van der Waals radius is 158.pm. Cadmium is a component of some of the lowest melting alloys; it is used in bearing alloys with low coefficients of friction and great resistance to fatigue. Cadmium is used extensively in electroplating, which accounts for about 60% of its use.

Selenium is a Block P, Group 16, Period 4 element. The electronic configuration is [Ar] 3d10 4s2 4p4. In its elemental form selenium's CAS number is 7782-49-2. The selenium atom has a radius of 116.pm and it's Van der Waals radius is 190.pm. Selenium exhibits both photovoltaic action, where light is converted directly into electricity, and photoconductive action, where the electrical resistance decreases with increased illumination. These properties make selenium useful in the production of photocells and exposure meters for photographic use, as well as solar cells. Below its melting point, selenium is a p-type semiconductor and has many uses in electronic and solid-state applications.

Zinc is a Block D, Group 12, Period 4 element. The electronic configuration is [Ar] 3d10 4s2. In its elemental form zinc's CAS number is 7440-66-6. The zinc atom has a radius of 133.5.pm and it's Van der Waals radius is 139.pm. Zinc is a bluish-white, lustrous metal. It is brittle at ordinary temperatures but malleable at 100 to 150 o C. It is a fair conductor of electricity, and burns in air at high red heat with evolution of white clouds of the oxide. It has unusual electrical, thermal, optical, and solid-state properties that have not been fully investigated. The metal is employed to form numerous alloys with other metals. Brass, nickel, silver, commercial bronze, soft solder, and aluminum solder are some of the more important alloys.
Formula CAS No. Appearance Molecular Weight Density Melting Point Boiling Point
CdSe/ZnS
PRODUCT CATALOG Submicron & Nanopowder Tolling Ultra High Purity Sputtering Target Crystal Growth Rod, Plate, Powder, etc.
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Recent Research & Development for Tellurium

  • Structural, Electrical, and Photoconductive Properties of Individual Single-Crystalline Tellurium Nanotubes Synthesized by a Chemical Route: Doping Effects on Electrical Structure. Small. 2008 Jun 2. [Epub ahead of print] No abstract available.

  • Twinning by merohedry in bis(4-methoxyphenyl)tellurium(IV) diiodide dimethyl sulfoxide hemisolvate. Acta Crystallogr C. 2008 May;64(Pt 5):o257-60. Epub 2008 Apr 9.

  • Doppler-free, multiwavelength acousto-optic deflector for two-photon addressing arrays of Rb atoms in a quantum information processor. Appl Opt. 2008 Apr 10;47(11):1816-31.

  • Reconstruction of individual radiation doses for a case-control study of thyroid cancer in French Polynesia. Health Phys. 2008 May;94(5):418-33.

  • Dynamics of the size distribution of CdTe quantum dot ensembles during growth in liquid and crystalline phases. Chemphyschem. 2008 May 16;9(7):1057-61.

  • Volatilisation of metals and metalloids: An inherent feature of methanoarchaea? Syst Appl Microbiol. 2008 Jun;31(2):81-7. Epub 2008 Apr 18.

  • Imaging characteristics of zinc sulfide shell, cadmium telluride core quantum dots. Nanomed. 2008 Feb;3(1):21-9.

  • Construction of the active site of glutathione peroxidase on polymer-based nanoparticles. Biomacromolecules. 2008 May;9(5):1467-73. Epub 2008 Apr 8.

  • Thick tellurium electrodeposition on nickel-coated copper substrate for (124)I production. Appl Radiat Isot. 2008 Feb 26. [Epub ahead of print]

  • Role of intestinal microbiota in transformation of bismuth and other metals and metalloids into volatile methyl and hydride derivatives in humans and mice. Appl Environ Microbiol. 2008 May;74(10):3069-75. Epub 2008 Mar 31.

  • Object detection with a field-portable spectropolarimetric imager. Appl Opt. 2001 Dec 20;40(36):6626-32.

  • Synthesis, NMR characterisation and X-ray structures of mixed chalcogenido PNP ligands containing tellurium: crystal structures of SeiPr2PNP(H)iPr2 and [NaN(EPiPr2)2]infinity (E = Se, Te). Dalton Trans. 2008 Apr 7;(13):1765-72. Epub 2008 Feb 20.

  • Effect of temperature on the absorption loss of chalcogenide glass fibers. Appl Opt. 1999 May 20;38(15):3206-13.

  • Electrical resistivity of tetramethyltetratelluronaphtalene crystal at very high pressures - examination of the condition of metallization of pi molecular crystal. J Am Chem Soc. 2008 Mar 26;130(12):3738-9. Epub 2008 Mar 1.

  • Surface characterization of platinum electrodes. Phys Chem Chem Phys. 2008 Mar 14;10(10):1359-73. Epub 2007 Oct 25.

  • [Te(CN)4] versus [Te(CN)3(micro-CN)](n). Dalton Trans. 2008 Mar 14;(10):1289-91. Epub 2008 Jan 30.

  • NMR solution structure of KP-TerB, a tellurite-resistance protein from Klebsiella pneumoniae. Protein Sci. 2008 Apr;17(4):785-9. Epub 2008 Feb 27.

  • Comparison of distribution and metabolism between tellurium and selenium in rats. J Inorg Biochem. 2008 Jan 26. [Epub ahead of print]

  • Speciation of inorganic tellurium from seawater by ICP-MS following magnetic SPE separation and preconcentration. J Sep Sci. 2008 Mar;31(4):760-7.

  • Utilizing a CdTe quantum dots-enzyme hybrid system for the determination of both phenolic compounds and hydrogen peroxide. Anal Chem. 2008 Feb 15;80(4):1141-5.

 

 

 

 

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