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Germanium Telluride
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99.999% Germanium Telluride Powder
GE-TE-05-P
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99.999% Germanium Telluride Ingot
GE-TE-05-I
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99.999% Germanium Telluride Chunk
GE-TE-05-CK
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99.999% Germanium Telluride Lump
GE-TE-05-L
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99.999% Germanium Telluride Sputtering Target
GE-TE-05-ST
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Germanium Telluride is a crystalline solid used as a semiconductor and in photo optic applications. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.

Germanium is a Block P, Group 14, Period 4 element. The electronic configuration is [Ar] 3d10 4s2 4p2. In its elemental form germanium's CAS number is 7440-56-4. The germanium atom has a radius of 122.5.pm and it's Van der Waals radius is 200.pm. Germanium is a very important semiconductor. Zone-refining techniques have led to production of crystalline germanium for semiconductor use with extremely high purities. When germanium is doped with arsenic, gallium, or other elements, it is used as a transistor element in thousands of electronic applications. The most common use of germanium is as a semiconductor. Germanium is also finding many other applications including use as an alloying agent, as a phosphor in fluorescent lamps, and as a catalyst. Germanium and germanium oxide are transparent to the infrared and are used in infrared spectroscopes and other optical equipment, including extremely sensitive infrared detectors. The high refractive index and dispersion properties of its oxide's have made germanium useful as a component of wide-angle camera lenses and microscope objectives. The field of organo-germanium chemistry is becoming increasingly important.

Tellurium is a Block P, Group 16, Period 5 element. The electronic configuration is [Kr] 4d10 5s2 5p4. In its elemental form tellurium's CAS number is 13494-80-9. The tellurium atom has a radius of 143.2.pm and it's Van der Waals radius is 206.pm. Tellurium is a p-type semiconductor, and shows greater conductivity in certain directions, depending on alignment of the atoms. It is grown in crystalline form with other elements such as indium telluride. Its conductivity increases slightly with exposure to light which makes many tellurides candidates for solar energy applications. . Tellurium improves the machinability of copper and stainless steel, and its addition to lead decreases the corrosive action of sulfuric acid on lead and improves its strength and hardness. Tellurium is used as a basic ingredient in blasting caps, and is added to cast iron for chill control. Tellurium is used in ceramics. Bismuth telluride has been used in thermoelectric devices. Iron is available as metal and compounds with purities from 99% to 99.999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. Tellurium was first discovered by Franz Muller von Reichenstein in 1782.

American Elements semi conducting materials are crystal structures produced from ultra high purity starting materials synthesized by our high purity production facility which includes several large electric muffle furnaces, a tube furnace for hydrogen reduction, 50 gallon glass-lined Pfaudler reactors supported by our analytical laboratory containing X-ray diffraction, SEM, AA, BET surface area, and ICP Spectrometry for trace metals analysis. See a discussion of American Elements Ultra High Purity and Analytical capabilities. See Crystal Growth for processes used to fabricate semiconductor materials, which include:

  • Crystal "pulling" by the Czochaiski method for production of semiconductor materials
  • Flux growth and gradient freeze
  • Directional solidification of fluorites using both the Bridgman-Stockbarger and float zoning techniques
PRODUCT CATALOG Submicron & Nanopowder Tolling Ultra High Purity Sputtering Target Crystal Growth Rod, Plate, Powder, etc.
 
 
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Recent Research & Development for Germanium

  • Enhanced effect of local fields in subwavelength metallic series nanocavities from surface plasmon polaritons. J Opt Soc Am A Opt Image Sci Vis. 2007 Oct;24(10):A1-6.

  • Synthesis and Biological Activity of 3-(2, 8, 9-Trioxa-aza-1-germatricyclo [3. 3. 3. 0]undecane-1-yl)-hydroxycinnamic Acids. Med Chem. 2007 Sep;3(5):466-8.

  • Structure and Properties of Gd(3)Ge(4): The Orthorhombic RE(3)Ge(4) Structures Revisited (RE = Y, Tb-Tm). Inorg Chem. 2007 Sep 18; [Epub ahead of print] PMID: 17877339 [PubMed - as supplied by publisher] 4: Navarro JF, Lopez MA, Navarro T, Ros JM, Moraleda M. Related Articles, Links ASSESSMENT OF THE INTERNAL DOSE OF 241Am IN BONE BY IN VIVO MEASUREMENTS OF ACTIVITY DEPOSITED IN KNEE. Radiat Prot Dosimetry. 2007 Sep 14; [Epub ahead of print]

  • MONTE CARLO MODELLING FOR IN VIVO MEASUREMENTS OF AMERICIUM IN A KNEE VOXEL PHANTOM: GENERAL CRITERIA FOR AN INTERNATIONAL COMPARISON. Radiat Prot Dosimetry. 2007 Sep 11; [Epub ahead of print]

  • Reconstruction of rapidly acquired Germanium-68 transmission scans for cardiac PET attenuation correction. J Nucl Cardiol. 2007 Sep-Oct;14(5):706-14.

  • Determination of radioactivity levels and hazards of soil and sediment samples in Firtina Valley (Rize, Turkey). Appl Radiat Isot. 2007 Jun 26; [Epub ahead of print]

  • Proof-of-Principle to Measure Potassium in the Human Brain: A Feasibility Study. Int J Body Compos Res. 2004;2(1):37-43.

  • Germanium phthalocyanine, GePc, and the reduced complexes SiPc(pyridine)(2) and GePc(pyridine)(2) containing antiaromatic pi-electron circuits. Inorg Chem. 2007 Sep 17;46(19):7713-5. Epub 2007 Aug 18.

  • Vitrification of a monatomic metallic liquid. Nature. 2007 Aug 16;448(7155):787-90.

  • Electronic Properties of Si and Ge Atoms Doped In Clusters: In(n)()Si(m)() and In(n)()Ge(m)().
    J Phys Chem A Mol Spectrosc Kinet Environ Gen Theory. 2007 Feb 1;111(4):573-7.

  • Self-Assembly and Phase Behavior of Germanium Oxide Nanoparticles in Basic Aqueous Solutions.

    Langmuir. 2007 Jan 23; [Epub ahead of print]

  • [Au(3)Ge(18)](5-)-A germanium-Germanium Cluster with Remarkable Au-Au Interactions.
    Angew Chem Int Ed Engl. 2007 Jan 18; [Epub ahead of print] No abstract available.

  • Monolayers at solid-solid interfaces probed with infrared spectroscopy.

    Anal Bioanal Chem. 2007 Jan 10; [Epub ahead of print]

  • Biochemical Interaction Analysis on ATR Devices: A Wet Chemistry Approach for Surface Functionalization.
    Langmuir. 2007 Jan 16;23(2):949-955.

  • Density functional theory study of twelve-atom germanium clusters: conflict between the Wade-Mingos rules and optimum vertex degrees.
    Dalton Trans. 2007 Jan 21;(3):364-72. Epub 2006 Dec 8.

  • Crystallography and surface faceting of germanium nanowires.
    Small. 2005 Jul;1(7):717-21. No abstract available.

  • Temperature-dependent growth of germanium oxide and silicon oxide based nanostructures, aligned silicon oxide nanowire assemblies, and silicon oxide microtubes.
    Small. 2005 Apr;1(4):429-38.

  • {Ge(10)Si[Si(SiMe(3))(3)](4)(SiMe(3))(2)Me}(-): A Ge(10)Si framework reveals a structural transition onto elemental germanium.
    Chem Commun (Camb). 2007 Jan 14;(2):192-4. Epub 2006 Oct 24.

  • DETERMINATION OF CONVERSION FACTORS FROM AIR KERMA TO OPERATIONAL DOSE EQUIVALENT QUANTITIES FOR LOW-ENERGY X-RAY SPECTRA.
    Radiat Prot Dosimetry. 2006 Dec 16; [Epub ahead of print]

 

 

 

 

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