Hafnium Telluride (HfTe) is a crystal grown product generally immediately available in most volumes. Technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement. Hafnium Telluride (HfTe) is also available as Quantum Dots. HfTe Quantum Dots have the widest wavelength range reaching sizes as small as less then 500 nm; within the range sufficient to emit light in the blue-white range. Hafnium Telluride Quantum Dots are charged aqueous soluble nano crystals with narrow emission spectra from 490 nm to 740 nm. Hafnium Telluride (HfTe) is also used in solar energy and advanced optical applications.
Hafnium is a Block D, Group 4, Period 6 element. The number of electrons in each of Hafnium's shells is 2, 8, 18, 32, 10, 2 and its electronic configuration is [Xe] 4f14 5d2 6s2. In its elemental form hafnium's CAS number is 7440-58-6.The hafnium atom has a radius of 156.4.pm and it's Van der Waals radius is 200.pm. Hafnium is not toxic. Hafnium is one of the Group IV transition elements that is refined from various zirconic mineral deposits. Hafnium is available as metal and compounds with purities from 99% to 99.999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. It's primary uses are due to its ability as a nuclear "getter" or absorber of neutrons. It is a primary component in nuclear control rods for this purpose. It also finds uses as a dopant in the alloy of steel and titanium. It is also used in the production of mantles for high intensity incandescent lamps. Hafnium is replacing polysilicon as the principle gate or electrode material in metaloxide semiconductor field effect transistors (MOSFETs) which are the basis for all modern semiconductors. As semiconductors have gotten smaller, the limiting factor in further size reduction has been the ability of the silicon oxide gate to perform below 10 angstroms where leakage occurs. Recent research has been devoted to the development of High-k materials which can function as a di-electric barrier or gate with lower leakage. Using hafnium based alloys as this di-electric gate has allowed for the development of MOSFET gates smaller than 10 angstroms. This allows for further size reduction, reduced switching power requirements and improved performance. Hafnium was first discovered by Dirk Coster in 1923. See Hafnium research below.
Tellurium is a Block P, Group 16, Period 5 element. The number of electrons in each of Tellurium's shells is 2, 8, 18, 18, 6 and its electronic configuration is [Kr] 4d10 5s2 5p4. In its elemental form tellurium's CAS number is 13494-80-9. The tellurium atom has a radius of 143.2.pm and it's Van der Waals radius is 206.pm. Tellurium is a p-type semiconductor, and shows greater conductivity in certain directions, depending on alignment of the atoms. It is grown in crystalline form with other elements such as indium telluride. Its conductivity increases slightly with exposure to light which makes many tellurides candidates for solar energyapplications. Tellurium improves the machinability of copper and stainless steel, and its addition to lead decreases the corrosive action of sulfuric acid on lead and improves its strength and hardness. Tellurium is used as a basic ingredient in blasting caps, and is added to cast iron for chill control. Tellurium is used in ceramics. Bismuth telluride has been used in thermoelectric devices. Iron is available as metal and compounds with purities from 99% to 99.999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. Tellurium was first discovered by Franz Muller von Reichenstein in 1782. The name Tellurium originates from the Greek word 'Tellus' meaning Earth. See Tellurium research below.
American Elements semi conducting materials are crystal structures produced from ultra high purity starting materials synthesized by our high purity production facility which includes several large electric muffle furnaces, a tube furnace for hydrogen reduction, 50 gallon glass-lined Pfaudler reactors supported by our analytical laboratory containing X-ray diffraction, SEM, AA, BET surface area, and ICP Spectrometry for trace metals analysis. See a discussion of American Elements Ultra High Purity and Analytical capabilities. See Crystal Growth for processes used to fabricate semiconductor materials, which include:
Crystal "pulling" by the Czochaiski method for production of semiconductor materials
Flux growth and gradient freeze
Directional solidification of fluorites using both the Bridgman-Stockbarger and float zoning techniques
PACKAGING SPECIFICATIONS FOR BULK & RESEARCH QUANTITIES
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.
N(2) Activation by a Hafnium Complex: A DFT
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Effective enrichment and mass spectrometry analysis of phosphopeptides using
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Synthesis, characterization and
biological study on Cr(3+), ZrO(2+), HfO(2+) and UO(2)(2+) complexes of
oxalohydrazide and bis(3-hydroxyimino)butan-2-ylidene)-oxalohydrazide.
El-Asmy AA, El-Gammal OA, Radwan HA. Spectrochim Acta A Mol Biomol Spectrosc. 2010 Sep 1;76(5):496-501. Epub 2010 Apr
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Intramolecular
sigma-bond metathesis/protonolysis on zirconium(IV) and hafnium(IV) pyridylamido
olefin polymerization catalyst precursors: exploring unexpected reactivity paths.
Luconi L, Giambastiani G, Rossin A, Bianchini C, Lledós A. Inorg Chem. 2010 Aug 2;49(15):6811-3. PubMed PMID: 20583749.
Guided-mode resonant wave plates.
Magnusson R, Shokooh-Saremi M, Johnson EG. Opt Lett. 2010 Jul 15;35(14):2472-4. doi: 10.1364/OL.35.002472. PubMed PMID:
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Initiation of a
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Zirconium(IV)- and hafnium(IV)-catalyzed highly
enantioselective epoxidation of homoallylic and bishomoallylic alcohols. Li Z, Yamamoto H. J Am
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Combined U-Pb and Lu-Hf isotope
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Cienc. 2010 Jun;82(2):479-91. PubMed PMID: 20563428.
Preparation and structures of
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N atoms, and their catalytic property for polymerization of rac-lactide. Hu M, Wang M, Zhu H, Zhang L, Zhang H, Sun L. Dalton
Trans. 2010 May 14;39(18):4440-6. Epub 2010 Mar 31. PubMed PMID: 20358041.
Effect of deposition temperature on the
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A younger age for ALH84001 and its geochemical link to shergottite sources in
Mars. Lapen TJ, Righter M, Brandon AD, Debaille V, Beard BL, Shafer JT, Peslier AH. Science. 2010 Apr 16;328(5976):347-51. PubMed PMID: 20395507.
Improved reliability from a
plasma-assisted metal-insulator-metal capacitor comprising a high-k HfO2 film on
a flexible polyimide substrate. Meena JS, Chu MC, Kuo SW, Chang FC, Ko FH. Phys Chem Chem Phys. 2010 Mar 20;12(11):2582-9.
Epub 2010 Jan 26. PubMed PMID: 20200734.
Optical coatings in microscale channels by atomic
layer deposition. Gabriel NT, Talghader JJ. Appl Opt. 2010 Mar 10;49(8):1242-8. doi: 10.1364/AO.49.001242.
PubMed PMID: 20220879.
Effect of
TiF4, ZrF4, HfF4 and AmF on erosion and erosion/abrasion of enamel and dentin in
situ. Wiegand A, Hiestand B, Sener B, Magalhães AC, Roos M, Attin T. Arch Oral Biol. 2010 Mar;55(3):223-8. Epub 2010 Jan 18. PubMed PMID:
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Hydrolysis of
bis(p-nitrophenyl)phosphate by tetravalent metal complexes with Klaui's oxygen
tripodal ligand. Yi XY, Lam TC, Williams ID, Leung WH. Inorg Chem. 2010 Mar 1;49(5):2232-8. PubMed PMID: 20131806.
Synthesis of nested coaxial
multiple-walled nanotubes by atomic layer deposition. Gu D, Baumgart H, Abdel-Fattah TM, Namkoong G. ACS Nano. 2010 Feb
23;4(2):753-8. Erratum in: ACS Nano. 2010 Jul 27;4(7):4331. PubMed PMID:
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Synthesis and characterisation of ionic liquids based on
1-butyl-3-methylimidazolium chloride and MCl(4), M = Hf and Zr. Campbell PS, Santini CC, Bouchu D, Fenet B, Rycerz L, Chauvin Y, Gaune-Escard
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Dielectric
surface-controlled low-voltage organic transistors via n-alkyl phosphonic acid
self-assembled monolayers on high-k metal oxide. Acton BO, Ting GG, Shamberger PJ, Ohuchi FS, Ma H, Jen AK. ACS Appl Mater Interfaces. 2010
Feb;2(2):511-20. PubMed PMID: 20356199.
In situ reaction
mechanism studies on ozone-based atomic layer deposition of Al(2)O(3) and HfO(2). Rose M, Niinistö J, Endler I, Bartha JW, Kücher P, Ritala M.
ACS Appl Mater Interfaces. 2010 Feb;2(2):347-50. PubMed PMID: 20356179.
Is titanium tetrafluoride (TiF4) effective
to prevent carious and erosive lesions? A review of the literature. Wiegand A, Magalhães AC, Attin T. Oral Health
Prev Dent. 2010;8(2):159-64. Review. PubMed PMID: 20589250.
Multi-metal(loid) methylation in methanoarchaea is linked to central intermediates of methanogenesis.
Thomas F, Diaz-Bone RA, Wuerfel O, Huber B, Weidenbach K, Schmitz RA, Hensel R.
Appl Environ Microbiol. 2011 Oct 14. [Epub ahead of print]
PMID:
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[PubMed - as supplied by publisher]
Synthesis, structure, and bonding of orthorhombic r(5)au(2)te(2) (R = lu, ho, dy, y). Electronic structure of the binary parent valence compound eu(5)as(4).
Chai P, Corbett JD.
Inorg Chem. 2011 Nov 7;50(21):10949-55. Epub 2011 Oct 12.
PMID:
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[PubMed - in process]
Glucose-6-Phosphate Dehydrogenase Protects Escherichia coli from Tellurite-Mediated Oxidative Stress.
Sandoval JM, Arenas FA, Vásquez CC.
PLoS One. 2011;6(9):e25573. Epub 2011 Sep 30.
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[PubMed - in process]
Microbial processing of tellurium as a tool in biotechnology.
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[PubMed - as supplied by publisher]
Measurement of the ?? Decay Half-Life of ^{130}Te with the NEMO-3 Detector.
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Phys Rev Lett. 2011 Aug 5;107(6):062504. Epub 2011 Aug 4.
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Synthesis and characterization of wurtzite ZnTe nanorods with controllable aspect ratios.
Zhang J, Jin S, Fry HC, Peng S, Shevchenko E, Wiederrecht GP, Rajh T.
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A homometallic tricapped cubane cluster: [(Cp*Mo)4B4H4(?4-BH)3] (Cp* = ?5-C5Me5).
Thakur A, Sahoo S, Ghosh S.
Inorg Chem. 2011 Sep 5;50(17):7940-2. Epub 2011 Aug 11.
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[PubMed - in process]
Selective antimicrobial activity associated with sulfur nanoparticles.
Schneider T, Baldauf A, Ba LA, Jamier V, Khairan K, Sarakbi MB, Reum N, Schneider M, Röseler A, Becker K, Burkholz T, Winyard PG, Kelkel M, Diederich M, Jacob C.
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Bioactivity of the conjugation of green-emitting CdTe quantum dots with a carborane complex.
Wu C, Shi L, Li Q, Zhao J, Selke M, Yan H, Wang X.
J Nanosci Nanotechnol. 2011 Apr;11(4):3091-9.
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Isolation and characterization of an environmental cadmium- and tellurite-resistant Pseudomonas strain.
Chien CC, Jiang MH, Tsai MR, Chien CC.
Environ Toxicol Chem. 2011 Oct;30(10):2202-7. doi: 10.1002/etc.620. Epub 2011 Aug 10.
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[PubMed - in process]
An ultrasensitive hydrogen peroxide biosensor based on electrocatalytic synergy of graphene-gold nanocomposite, CdTe-CdS core-shell quantum dots and gold nanoparticles.
Gu Z, Yang S, Li Z, Sun X, Wang G, Fang Y, Liu J.
Anal Chim Acta. 2011 Sep 2;701(1):75-80. Epub 2011 Jul 4.
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Synchronous determination of mercury (II) and copper (II) based on quantum dots-multilayer film.
Ma Q, Ha E, Yang F, Su X.
Anal Chim Acta. 2011 Sep 2;701(1):60-5. Epub 2011 Jun 17.
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Procedure-Controlled Selective Synthesis of 5-Acyl-2-iminothiazolines and their Selenium and Tellurium Derivatives by Convergent Tandem Annulation.
Wang Y, Zhang WX, Wang Z, Xi Z.
Angew Chem Int Ed Engl. 2011 Jul 14. doi: 10.1002/anie.201101948. [Epub ahead of print] No abstract available.
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Synthesis, structures and ab initio studies of selenium and tellurium bis(carbodithioates and carbothioates).
Kato S, Tani K, Ishida M, Nonogaki J, Ebihara M, Hayashi S, Nakanishi W, Niyomura O, Ando F, Koketsu J.
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Nanotechnology. 2011 Aug 5;22(31):315303. Epub 2011 Jul 12.
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Differentiation between the motor and sensory fascicles of the peripheral nerves from adult rats using annexin V-CdTe-conjugated polymer.
Meng X, Lu L, Wang H, Liu B.
Neurol India. 2011 May-Jun;59(3):333-8.
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21743158
[PubMed - indexed for MEDLINE]
Tellurium tetrachloride and diphenyl ditelluride cause cytotoxicity in rat hippocampal astrocytes.
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[PubMed - in process]
Hafnium Telluride (HfTe) is a crystal grown product generally immediately available in most volumes. Technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement. Hafnium Telluride (HfTe) is also available as Quantum Dots. HfTe Quantum Dots have the widest wavelength range reaching sizes as small as less then 500 nm; within the range sufficient to emit light in the blue-white range. Hafnium Telluride Quantum Dots are charged aqueous soluble nano crystals with narrow emission spectra from 490 nm to 740 nm. Hafnium Telluride (HfTe) is also used in solar energy and advanced optical applications.
Hafnium is a Block D, Group 4, Period 6 element. The number of electrons in each of Hafnium's shells is 2, 8, 18, 32, 10, 2 and its electronic configuration is [Xe] 4f14 5d2 6s2. In its elemental form hafnium's CAS number is 7440-58-6.The hafnium atom has a radius of 156.4.pm and it's Van der Waals radius is 200.pm. Hafnium is not toxic. Hafnium is one of the Group IV transition elements that is refined from various zirconic mineral deposits. Hafnium is available as metal and compounds with purities from 99% to 99.999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. It's primary uses are due to its ability as a nuclear "getter" or absorber of neutrons. It is a primary component in nuclear control rods for this purpose. It also finds uses as a dopant in the alloy of 
steel and 
titanium. It is also used in the production of mantles for high intensity incandescent lamps. Hafnium is replacing polysilicon as the principle gate or electrode material in metal oxide semiconductor field effect transistors (MOSFETs) which are the basis for all modern semiconductors. As semiconductors have gotten smaller, the limiting factor in further size reduction has been the ability of the silicon oxide gate to perform below 10 angstroms where leakage occurs. Recent research has been devoted to the development of High-k materials which can function as a di-electric barrier or gate with lower leakage. Using hafnium based alloys as this di-electric gate has allowed for the development of MOSFET gates smaller than 10 angstroms. This allows for further size reduction, reduced switching power requirements and improved performance. Hafnium was first discovered by Dirk Coster in 1923. See Hafnium research below. 
Tellurium is a Block P, Group 16, Period 5 element. The number of electrons in each of Tellurium's shells is 2, 8, 18, 18, 6 and its electronic configuration is [Kr] 4d10 5s2 5p4. In its elemental form tellurium's CAS number is 13494-80-9. The tellurium atom has a radius of 143.2.pm and it's Van der Waals radius is 206.pm. Tellurium is a p-type semiconductor, and shows greater conductivity in certain directions, depending on alignment of the atoms. It is grown in crystalline form with other elements such as indium telluride. Its conductivity increases slightly with exposure to light which makes many tellurides candidates for solar energyapplications. Tellurium improves the machinability of copper and stainless steel, and its addition to lead decreases the corrosive action of sulfuric acid on lead and improves its strength and hardness. 
Tellurium is used as 
a basic ingredient in blasting caps, and is added to cast iron for chill control. Tellurium is used in ceramics. Bismuth telluride has been used in thermoelectric devices. Iron is available as metal and compounds with purities from 99% to 99.999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. Tellurium was first discovered by Franz Muller von Reichenstein in 1782. The name Tellurium originates from the Greek word 'Tellus' meaning Earth. See Tellurium research below.
