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Tin Chunk

High Purity Sn Chunk
CAS 7440-31-5


Product Product Code Request Quote
(2N) 99% Tin Chunk SN-M-02-CK Request Quote
(3N) 99.9% Tin Chunk SN-M-03-CK Request Quote
(4N) 99.99% Tin Chunk SN-M-04-CK Request Quote
(5N) 99.999% Tin Chunk SN-M-05-CK Request Quote
(6N) 99.9999% Tin Chunk SN-M-06-CK Request Quote

CHEMICAL
IDENTIFIER
Formula CAS No. PubChem SID PubChem CID MDL No. EC No Beilstein
Re. No.
SMILES
Identifier
InChI
Identifier
InChI
Key
Sn 7440-31-5 166491 N/A MFCD00133862  231-141-8 N/A [Sn] InChI=1S/Sn ATJFFYVFTNAWJD-UHFFFAOYSA-N

PROPERTIES Mol. Wt. Appearance Density Tensile Strength Melting Point Boiling Point Thermal Conductivity Electrical Resistivity Eletronegativity Specific Heat Heat of Vaporization Heat of Fusion MSDS
118.69 Yellow 7310 kg/m³ N/A 231.93 °C 2602 °C 0.668 W/cm/K @ 298.2 K  11.0 microhm-cm @ °C 1.8 Paulings  0.0510 Cal/g/K @ 25 °C 70 K-Cal/gm atom at 2270 °C 1.72 Cal/gm mole  Safety Data Sheet

High Purity ChunkAmerican Elements specializes in producing high purity Tin Chunks are produced using crystallization, solid state and other ultra high purification processes such as sublimation. Standard Chunk pieces are amorphous uniform pieces ranging in size from 5-15 mm. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into granules, rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles and in the form of solutions and organometallics. We also produce Tin as rod, pellets, powder, pieces, disc, ingot, wire, and in compound forms, such as oxide. Other shapes are available by request.

Tin Bohr ModelTin (Sn) atomic and molecular weight, atomic number and elemental symbolTin (atomic symbol: Sn, atomic number: 50) is a Block P, Group 14, Period 5 element with an atomic weight of 118.710. The number of electrons in each of tin's shells is 2, 8, 18, 18, 4 and its electron configuration is [Kr] 4d10 5s2 5p2. The tin atom has a radius of 140.5 pm and a Van der Waals radius of 217 pm.In its elemental form, tin has a silvery-gray metallic appearance. It is malleable, ductile and highly crystalline. High Purity (99.9999%) Tin (Sn) MetalTin has nine stable isotopes and 18 unstable isotopes. Under 3.72 degrees Kelvin, Tin becomes a superconductor. Applications for tin include soldering, plating, and such alloys as pewter. The first uses of tin can be dated to the Bronze Age around 3000 BC in which tin and copper were combined to make the alloy bronze. The origin of the word tin comes from the Latin word Stannum which translates to the Anglo-Saxon word tin. For more information on tin, including properties, safety data, research, and American Elements' catalog of tin products, visit the Tin element page.

HEALTH, SAFETY & TRANSPORTATION INFORMATION
Warning
H319-H335 
Xi
36/37
26
XP7320000
N/A
3
Exclamation Mark-Acute Toxicity        

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Show Me MORE Forms of Tin

PACKAGING SPECIFICATIONS FOR BULK & RESEARCH QUANTITIES
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums tTypical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.


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Recent Research & Development for Tin

  • Formation mechanism of rutile tio2 rods on fluorine doped tin oxide glass.. Meng X, Shin DW, Yu SM, Park MH, Yang C, Lee JH, Yoo JB.. J Nanosci Nanotechnol. 2014 Nov
  • Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film.. Wölz M, Hauswald C, Flissikowski T, Gotschke T, Fernandez-Garrido S, Brandt O, Grahn HT, Geelhaar L, Riechert H.. Nano Lett. 2015 May 22.
  • Microstructural characteristics of tin oxide-based thin films on (0001) Al2O3 substrates: effects of substrate temperature and RF power during co-sputtering.. Hwang S, Lee JH, Kim YY, Yun MG, Lee KH, Lee JY, Cho HK.. J Nanosci Nanotechnol. 2014 Dec
  • Enzyme-free glucose sensor based on Au nanobouquet fabricated indium tin oxide electrode.. Lee JH, El-Said WA, Oh BK, Choi JW.. J Nanosci Nanotechnol. 2014 Nov
  • Voltage-Controlled Ring Oscillators Based on Inkjet Printed Carbon Nanotubes and Zinc Tin Oxide.. Kim B, Park J, Geier M, Hersam MC, Dodabalapur A.. ACS Appl Mater Interfaces. 2015 May 12.
  • A durable surface-enhanced Raman scattering substrate: ultrathin carbon layer encapsulated Ag nanoparticle arrays on indium-tin-oxide glass.. Bian J, Li Q, Huang C, Guo Y, Zaw M, Zhang RQ.. Phys Chem Chem Phys. 2015 May 18.
  • Co-solvent enhanced zinc oxysulfide buffer layers in Kesterite copper zinc tin selenide solar cells.. Steirer KX, Garris RL, Li JV, Dzara MJ, Ndione PF, Ramanathan K, Repins I, Teeter G, Perkins CL.. Phys Chem Chem Phys. 2015 May 22.
  • Solution-processed silver nanowire/indium-tin-oxide nanoparticle hybrid transparent conductors with high thermal stability.. Hong SJ, Kim JW, Kim YH.. J Nanosci Nanotechnol. 2014 Dec
  • Formation of Copper Zinc Tin Sulfide Thin Films from Colloidal Nanocrystal Dispersions via Aerosol-Jet Printing and Compaction.. Williams BA, Mahajan A, Smeaton MA, Holgate CS, Aydil ES, Francis LF.. ACS Appl Mater Interfaces. 2015 May 19.
  • Nanotubular Heterostructure of Tin Dioxide/Titanium Dioxide as a Binder-Free Anode in Lithium-Ion Batteries. Kim M, Lee J, Lee S, Seo S, Bae C, Shin H. ChemSusChem. 2015 Mar 20.: ChemSusChem