7440-33-7
| Product | Product Code | Order or Specifications |
| (2N) 99% Tungsten Silicon Sputtering Target | W-SI-02-ST |
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| (2N5) 99.5% Tungsten Silicon Sputtering Target | W-SI-025-ST |
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| (3N) 99.9% Tungsten Silicon Sputtering Target | W-SI-03-ST |
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| (3N5) 99.95% Tungsten Silicon Sputtering Target | W-SI-035-ST |
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| (4N) 99.99% Tungsten Silicon Sputtering Target | W-SI-04-ST |
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| (5N) 99.999% Tungsten Silicon Sputtering Target | W-SI-05-ST |
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and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard Sputtering Targets for thin film are available monoblock or bonded with dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devises as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Research sized targets are also produced as well as custom sizes and alloys. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. We can also provide targets outside this range in addition to just about any size rectangular, annular, or oval target. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes nanoparticles. We also produce Tungsten as disc, granules, ingot, pellets, pieces, powder, and rod. Other shapes are available by request.
Tungsten is a Block D, Group 6, Period 6 element. The number of electrons in each of Tungsten's shells is 2, 8, 18, 32, 12, 2 and its electronic configuration is [Xe] 4f14 5d4 6s2. In its elemental form tungsten's CAS number is 7440-33-7. The tungsten atom has a radius of 137.pm and it's Van der Waals radius is 200.pm. Tungsten is considered to be only mildly toxic. Tungsten has the highest melting point of all the metallic elements and because of this has its first significant commercial application as the filament in incandescent light bulbs and fluorescent light bulbs. Tungsten is available as metal and compounds with purities from 99% to 99.999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and 
compounds as submicron and nanopowder. Later it was used in the first television tubes. The first imaging equipment involved X-ray bombardment of a 
tungsten target. Tungsten expands at nearly the same rate as borosilicate glass and is used to make metal to glass seals. It is the primary metal in heating elements for electric furnaces and in any components where high pressure/temperature environments are expected, such as aerospace and engine systems. Tungsten was first discovered by Fausto and Juan Jose de Elhuyar in 1783. In reference to its density, Tungsten gets its name from the swedish words tung and sten meaning heavy stone. See Tungsten research below.
Silicon is a Block P, Group 14, Period 3 element. The number of electrons in each of Silicon's shells is 2, 8, 4 and its electronic configuration is [Ne] 3s2 3p2. In its elemental form silicon's CAS number is 7440-21-3. The silicon atom has a radius of 117.6.pm and it's Van der Waals radius is 210.pm. Silicon is not toxic but can cause chronic respiratory problems if inhaled as a fine silica or silicate dust. Asbestos silicates are carcinogenic. Silicon is
one of man's most useful elements. It makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, being exceeded only by oxygen. The Czochralski process is commonly used to produce single crystals of silicon used for solid-state or semiconductor devices. Silica, as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Silicon is available as metal and compounds with purities from 99% to 99.9999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. Ultra high purity silicon can be doped with boron, gallium, phosphorus , or arsenic to produce silicon for use in 
transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics and space-age industries. Hydrogenated amorphous silicon has shown promise in producing economical cells for converting solar energy into electricity. Silcones are important products of silicon. They range from liquids to hard, glasslike solids with many useful properties. Silicon was first discovered by Jons Berzelius in 1823. The name Silicon originates from the Latin word "silex" which means flint or hard stone. See Silicon research below.
| Formula | CAS No. | Appearance | Molecular Weight |
| W | 7440-33-7 | Silvery | 183.85 |
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Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.
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