American Elements specializes in producing high purity Zinc Gallium oxide sputtering targets with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard Sputtering Targets for thin film are available monoblock or bonded with dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devises as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Research sized targets are also produced as well as custom sizes and alloys. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. We can also provide targets outside this range in addition to just about any size rectangular, annular, or oval target. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles (See also application discussion at Nanotechnology Information and at Quantum Dots) and in the form of solutions and organometallics. We also produce Gallium Oxide as rods, powder and plates. Oxide compounds are not conductive to electricity. However, certain perovskite structured oxides are electronically conductive finding application in the cathode of solid oxide fuel cells and oxygen generation systems. See safety data and research below and pricing/lead time above. Other shapes are available by request.

Zinc is a Block D, Group 12, Period 4 element. The number of electrons in each of Zinc's shells is 2, 8, 18, 2, and its electronic configuration is [Ar] 3d¹⁰ 4s². In its elemental form zinc's CAS number is 7440-66-6. The zinc atom has a radius of 133.5.pm and it's Van der Waals radius is 139.pm. Combined with other elements as ores, Zinc is found in nature. Zinc is considered non-toxicin healthy doses but can cause nausea if taken in excess. Zinc is a bluish-white, lustrous metal which we produce in Special High Grade (SHG) purities. It is brittle at ordinary temperatures but malleable at 100 to 150 o C. It is a fair conductor of electricity, and burns in air at high red heat with evolution of white clouds of the oxide. It has unusual electrical, thermal, optical, and solid-state properties that have not been fully investigated. The metal is employed to form numerous alloys with other metals. Brass, nickel, silver, commercial bronze, soft solder, and aluminum solder are some of the more important alloys. Large quantities of zinc are used to produce die castings, which are used extensively by the automotive, electrical, and hardware industries. Zinc is also used extensively to galvanize other metals such as iron to prevent corrosion. Zinc oxide is widely used in the manufacture of paints, rubber products, cosmetics, pharmaceuticals, floor coverings, plastics, printing inks, soap, storage batteries, textiles, electrical equipment, and other products. Zinc sulfide is used in making luminous dials, X-ray and TV screens, and fluorescent lights The chloride and chromate are also important compounds. Zinc is available as metal and compounds with purities from 99% to 99.9999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. Zinc was first discovered by Andreas Marggraf in 1746. The element name Zinc originates from the German word 'zin" meaning tin. See Zinc research below.

Gallium is a Block P, Group 13, Period 4 element. The number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electronic configuration is [Ar] 3d¹⁰ 4s² 4p¹. In its elemental form gallium's CAS number is 7440-55-3. The gallium atom has a radius of 122.1.pm and it's Van der Waals radius is 187.pm. Gallium is not toxic. Gallium is one of three elements that naturally occur as a liquid at room temperature. The other two are mercury and cesium. The application of gallium that has received the most attention is the production of semiconducting compounds. Of these, the most important are the compounds of gallium with antimony, arsenic or phosphor. Nowadays gallium arsenide (Ga-As) is undoubtedly the most used. This compound is used in the production of several electronic parts such as diodes and transistors, made for voltage rectification, signal amplification, etc. Other gallium arsenide applications are the semiconductor "lasing" and microwave generation and also in sensors to measure temperature, light or magnetic field. Gallium was first discovered by Hans Christian Oersted in 1825. See Gallium research below.

American Elements semi conducting materials are crystal structures produced from ultra high purity starting materials synthesized by our high purity production facility which includes several large electric muffle furnaces, a tube furnace for hydrogen reduction, 50 gallon glass-lined Pfaudler reactors supported by our analytical laboratory containing X-ray diffraction, SEM, AA, BET surface area, and ICP Spectrometry for trace metals analysis. See a discussion of American Elements Ultra High Purity and Analytical capabilities. See Crystal Growth for processes used to fabricate semiconductor materials, which include:

• Crystal "pulling" by the Czochaiski method for production of semiconductor materials
• Flux growth and gradient freeze
• Directional solidification of fluorites using both the Bridgman-Stockbarger and float zoning techniques