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(7N5) 99.999995% Arsenic Metal

Ultra Hight Purity MBE Grade As Ingot, Rod, Pieces
CAS #: 7440-38-2
Linear Formula:
As
MDL Number
MFCD00085309
EC No.:
231-148-6

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Product Product Code ORDER SAFETY DATA Technical data
(7N5) 99.999995% Arsenic Ingot AS-E-075-I SDS > Data Sheet >
WHOLESALE/SKU 0000-742-260396

(7N5) 99.999995% Arsenic Metal Properties (Theoretical)

Molecular Weight 74.92
Appearance Silvery ingots, rods, chunks, and pieces
Melting Point 817 °C
Boiling Point 614 °C (sublimes)
Density 5.727 g/cm3
Solubility in H2O N/A
Young's Modulus 8 GPa
Vickers Hardness 1510 MPa
Thermal Conductivity 50 W/(m·K)
Thermal Expansion 5.6 µm/(m·K) (20 °C)
Electrical Resistivity 333 nΩ·m (20 °C)
Electronegativity 2.18
Heat of Fusion 24.44 kJ/mol
Heat of Vaporization 34.76 kJ/mol
Refractive Index 1.001552

(7N5) 99.999995% Arsenic Metal Health & Safety Information

Signal Word Danger
Hazard Statements H301 + H331-H410
Hazard Codes T, N
Precautionary Statements P261-P273-P301 + P310-P311-P501
Risk Codes N/A
Safety Statements N/A
RTECS Number CG0525000
Transport Information UN1558 6.1 / PGII
WGK Germany 3
GHS Pictogram
Image
Skull and Crossbones - GHS06
,
Image
Hazardous to the Aquatic Environment - GHS09

About (7N5) 99.999995% Arsenic Metal

Ultra high purity (7N5, 99.99995%) Arsenic ingots, chunks, and rods are employed as precursor materials for the epitaxial growth of single crystal III/V semiconductor thin films and nanoparticles via molecular beam epitaxy (MBE) and other techniques. These compound semiconductors are critical to the optoelectronics industry and include gallium arsenide (GaAs), indium arsenide (InAs), and indium gallium arsenide (InGaAs). Applications include high frequency integrated circuits and optoelectronic devices such as photodetectors, transistors, light emitting-diodes (LEDs), laser diodes, and photovoltaic solar cells. American Elements' rigorous standards ensure the absolute minimum levels of chemical impurities including oxygen and other gases. Standard and custom sizes are available, as are other purities including 7N and 6N (see arsenic ingots for more information). Please request a quote above to receive pricing information based on your specifications.

Chemical Identifiers

Linear Formula As
Pubchem CID 5359596
MDL Number MFCD00085309
EC No. 231-148-6
IUPAC Name arsenic
Beilstein/Reaxys No.
SMILES [As]
InchI Identifier InChI=1S/As
InchI Key RQNWIZPPADIBDY-UHFFFAOYSA-N
Chemical Formula
Molecular Weight
Standard InchI
Appearance
Melting Point
Boiling Point
Density

Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Related Elements

See more Arsenic products. Arsenic (atomic symbol: As, atomic number: 33) is a Block P, Group 15, Period 4 element with an atomic radius of 74.92160. Arsenic Bohr ModelThe number of electrons in each of arsenic's shells is 2, 8, 18, 5 and its electron configuration is [Ar] 3d10 4s2 4p3. The arsenic atom has a radius of 119 pm and a Van der Waals radius of 185 pm. Arsenic was discovered in the early Bronze Age, circa 2500 BC. It was first isolated by Albertus Magnus in 1250 AD. In its elemental form, arsenic is a metallic grey, brittle, crystalline, semimetallic solid. Elemental ArsenicArsenic is found in numerous minerals including arsenolite (As2O3), arsenopyrite (FeAsS), loellingite (FeAs2), orpiment (As2S3), and realgar (As4S4). Arsenic has numerous applications as a semiconductor and other electronic applications as indium arsenide, silicon arsenide and tin arsenide. Arsenic is finding increasing uses as a doping agent in solid-state devices such as transistors.