Aluminum Boron Sputtering Target

Linear Formula:

AlB2

MDL Number:

MFCD00084760

EC No.:

234-923-7

ORDER

PRODUCT Product Code ORDER SAFETY DATA TECHNICAL DATA
(2N) 99% Aluminum Boron Sputtering Target
AL-B-02-ST
Pricing > SDS > Data Sheet >
(3N) 99.9% Aluminum Boron Sputtering Target
AL-B-03-ST
Pricing > SDS > Data Sheet >
(4N) 99.99% Aluminum Boron Sputtering Target
AL-B-04-ST
Pricing > SDS > Data Sheet >
(5N) 99.999% Aluminum Boron Sputtering Target
AL-B-05-ST
Pricing > SDS > Data Sheet >

Aluminum Boron Sputtering Target Properties (Theoretical)

Compound Formula B2Al
Molecular Weight 48.604 g/mol
Appearance Sputtering Target
Melting Point N/A
Boiling Point N/A
Density 3.19 g/cm3
Solubility in H2O N/A
Exact Mass 49.000149
Monoisotopic Mass 49.000149

Aluminum Boron Sputtering Target Health & Safety Information

Signal Word N/A
Hazard Statements N/A
Hazard Codes N/A
Risk Codes N/A
Safety Statements N/A
Transport Information N/A

About Aluminum Boron Sputtering Target

American Elements specializes in producing high purity Aluminum Boron Sputtering Targets with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard Sputtering Targets for thin film are available monoblock or bonded with planar target dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devices as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Research sized targets are also produced as well as custom sizes and alloys. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. Please contact us for information on lead time and pricing above.

Aluminum Boron Sputtering Target Synonyms

Aluminium Boron (AlB) Master Alloy, Aluminum-boron, aluminium boron, Al-B, AlB, AlB3, AlB4, AlB5, AlB6, AlB8, AlB10

Chemical Identifiers

Linear Formula AlB2
MDL Number MFCD00084760
EC No. 234-923-7
Beilstein/Reaxys No. N/A
Pubchem CID 57518740
IUPAC Name aluminum; λ2- boranylideneboron
SMILES [B]=[B].[Al]
InchI Identifier InChI=1S/Al.B2/c;1-2
InchI Key KWHWTBILEAIARH-UHFFFAOYSA-N

Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Payment Methods

American Elements accepts checks, wire transfers, ACH, most major credit and debit cards (Visa, MasterCard, AMEX, Discover) and Paypal.

For the convenience of our international customers, American Elements offers the following additional payment methods:

SOFORT bank tranfer payment for Austria, Belgium, Germany and SwitzerlandJCB cards for Japan and WorldwideBoleto Bancario for BraziliDeal payments for the Netherlands, Germany, Austria, Belgium, Italy, Poland, Spain, Switzerland, and the United KingdomGiroPay for GermanyDankort cards for DenmarkElo cards for BrazileNETS for SingaporeCartaSi for ItalyCarte-Bleue cards for FranceChina UnionPayHipercard cards for BrazilTROY cards for TurkeyBC cards for South KoreaRuPay for India

Related Elements

Aluminum

See more Aluminum products. Aluminum (or Aluminium) (atomic symbol: Al, atomic number: 13) is a Block P, Group 13, Period 3 element with an atomic weight of 26.9815386. It is the third most abundant element in the earth's crust and the most abundant metallic element. Aluminum Bohr Model Aluminum's name is derived from alumina, the mineral from which Sir Humphrey Davy attempted to refine it from in 1812. Aluminum was first predicted by Antoine Lavoisier 1787 and first isolated by Hans Christian Øersted in 1825. Aluminum is a silvery gray metal that possesses many desirable characteristics. It is light, nonmagnetic and non-sparking. It stands second among metals in the scale of malleability, and sixth in ductility. It is extensively used in many industrial applications where a strong, light, easily constructed material is needed. Elemental AluminumAlthough it has only 60% of the electrical conductivity of copper, it is used in electrical transmission lines because of its light weight. Pure aluminum is soft and lacks strength, but alloyed with small amounts of copper, magnesium, silicon, manganese, or other elements, it imparts a variety of useful properties.

Boron

See more Boron products. Boron Bohr ModelBoron (atomic symbol: B, atomic number: 5) is a Block P, Group 13, Period 2 element with an atomic weight of 10.81. The number of electrons in each of boron's shells is 2, 3 and its electron configuration is [He] 2s2 2p1. The boron atom has a radius of 90 pm and a Van der Waals radius of 192 pm. Boron was discovered by Joseph Louis Gay-Lussac and Louis Jacques Thénard in 1808 and was first isolated by Humphry Davy later that year. Boron is classified as a metalloid is not found naturally on earth. Elemental BoronAlong with carbon and nitrogen, boron is one of the few elements in the periodic table known to form stable compounds featuring triple bonds. Boron has an energy band gap of 1.50 to 1.56 eV, which is higher than that of either silicon or germanium. The name Boron originates from a combination of carbon and the Arabic word buraqu meaning borax.

TODAY'S TOP DISCOVERY!

October 06, 2024
Los Angeles, CA
Each business day American Elements' scientists & engineers post their choice for the most exciting materials science news of the day
Researchers develop AINU (AI) to detect cancer and viral infections with nanoscale precision

Researchers develop AINU (AI) to detect cancer and viral infections with nanoscale precision