Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors.

Title Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors.
Authors Q. Ma; H.M. Zheng; Y. Shao; B. Zhu; W.J. Liu; S.J. Ding; D.Wei Zhang
Journal Nanoscale Res Lett
DOI 10.1186/s11671-017-2414-0

Atomic-layer-deposition (ALD) of In2O3 nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H2O2) as precursors. The In2O3 films can be deposited preferentially at relatively low temperatures of 160-200 °C, exhibiting a stable growth rate of 1.4-1.5 Å/cycle. The surface roughness of the deposited film increases gradually with deposition temperature, which is attributed to the enhanced crystallization of the film at a higher deposition temperature. As the deposition temperature increases from 150 to 200 °C, the optical band gap (Eg) of the deposited film rises from 3.42 to 3.75 eV. In addition, with the increase of deposition temperature, the atomic ratio of In to O in the as-deposited film gradually shifts towards that in the stoichiometric In2O3, and the carbon content also reduces by degrees. For 200 °C deposition temperature, the deposited film exhibits an In:O ratio of 1:1.36 and no carbon incorporation. Further, high-performance In2O3 thin-film transistors with an Al2O3 gate dielectric were achieved by post-annealing in air at 300 °C for appropriate time, demonstrating a field-effect mobility of 7.8 cm2/V?s, a subthreshold swing of 0.32 V/dec, and an on/off current ratio of 107. This was ascribed to passivation of oxygen vacancies in the device channel.

Citation Q. Ma; H.M. Zheng; Y. Shao; B. Zhu; W.J. Liu; S.J. Ding; D.Wei Zhang.Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors.. Nanoscale Res Lett. 2018;13(1):4. doi:10.1186/s11671-017-2414-0

Related Elements


See more Indium products. Indium (atomic symbol: In, atomic number: 49) is a Block P, Group 13, Period 5 element with an atomic weight of 114.818. The number of electrons in each of indium's shells is [2, 8, 18, 18, 3] and its electron configuration is [Kr] 4d10 5s2 5p1. The indium atom has a radius of 162.6 pm and a Van der Waals radius of 193 pm. Indium was discovered by Ferdinand Reich and Hieronymous Theodor Richter in 1863. Indium Bohr ModelIt is a relatively rare, extremely soft metal is a lustrous silvery gray and is both malleable and easily fusible. It has similar chemical properties to Elemental Indiumgallium such as a low melting point and the ability to wet glass. Fields such as optics and microelectronics that utilize semiconductor technology have wide uses for indium, especially in the form of Indiun Tin Oxide (ITO). Thin films of Copper Indium Gallium Selenide (CIGS) are used in high-performing solar cells. Indium's name is derived from the Latin word indicum, meaning violet.

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