Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

Title Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.
Authors F. Huang; X. Chen; X. Liang; J. Qin; Y. Zhang; T. Huang; Z. Wang; B. Peng; P. Zhou; H. Lu; L. Zhang; L. Deng; M. Liu; Q. Liu; H. Tian; L. Bi
Journal Phys Chem Chem Phys
DOI 10.1039/c6cp07501k
Abstract

Owing to their prominent stability and CMOS compatibility, HfO2-based ferroelectric films have attracted great attention as promising candidates for ferroelectric random-access memory applications. A major reliability issue for HfO2 based ferroelectric devices is fatigue. So far, there have been a few studies on the fatigue mechanism of this material. Here, we report a systematic study of the fatigue mechanism of yttrium-doped hafnium oxide (HYO) ferroelectric thin films deposited by pulsed laser deposition. The influence of pulse width, pulse amplitude and temperature on the fatigue behavior of HYO during field cycling is studied. The temperature dependent conduction mechanism is characterized after different fatigue cycles. Domain wall pinning caused by carrier injection at shallow defect centers is found to be the major fatigue mechanism of this material. The fatigued device can fully recover to the fatigue-free state after being heated at 90 °C for 30 min, confirming the shallow trap characteristic of the domain wall pinning defects.

Citation F. Huang; X. Chen; X. Liang; J. Qin; Y. Zhang; T. Huang; Z. Wang; B. Peng; P. Zhou; H. Lu; L. Zhang; L. Deng; M. Liu; Q. Liu; H. Tian; L. Bi.Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.. Phys Chem Chem Phys. 2017;19(5):34863497. doi:10.1039/c6cp07501k

Related Elements

Hafnium

See more Hafnium products. Hafnium (atomic symbol: Hf, atomic number: 72) is a Block D, Group 4, Period 6 element with an atomic weight of 178.49. Hafnium Bohr ModelThe number of electrons in each of Hafnium's shells is 2, 8, 18, 32, 10, 2 and its electron configuration is [Xe] 4f14 5d2 6s2. The hafnium atom has a radius of 159 pm and a Van der Waals radius of 212 pm. Hafnium was predicted by Dmitri Mendeleev in 1869 but it was not until 1922 that it was first isolated Dirk Coster and George de Hevesy. In its elemental form, hafnium has a lustrous silvery-gray appearance. Elemental HafniumHafnium does not exist as a free element in nature. It is found in zirconium compounds such as zircon. Hafnium is often a component of superalloys and circuits used in semiconductor device fabrication. Its name is derived from the Latin word Hafnia, meaning Copenhagen, where it was discovered.

Yttrium

See more Yttrium products. Yttrium (atomic symbol: Y, atomic number: 39) is a Block D, Group 3, Period 5 element with an atomic weight of 88.90585. Yttrium Bohr ModelThe number of electrons in each of yttrium's shells is [2, 8, 18, 9, 2] and its electron configuration is [Kr] 4d1 5s2. The yttrium atom has a radius of 180 pm and a Van der Waals radius of 219 pm. Yttrium was discovered by Johann Gadolin in 1794 and first isolated by Carl Gustav Mosander in 1840. In its elemental form, Yttrium has a silvery white metallic appearance. Yttrium has the highest thermodynamic affinity for oxygen of any element. Elemental YttriumYttrium is not found in nature as a free element and is almost always found combined with the lanthanides in rare earth minerals. While not part of the rare earth series, it resembles the heavy rare earths which are sometimes referred to as the "yttrics" for this reason. Another unique characteristic derives from its ability to form crystals with useful properties. The name yttrium originated from a Swedish village near Vaxholm called Yttbery where it was discovered.

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