Formation of an indium tin oxide nanodot/Ag nanowire electrode as a current spreader for near ultraviolet AlGaN-based light-emitting diodes.

Title Formation of an indium tin oxide nanodot/Ag nanowire electrode as a current spreader for near ultraviolet AlGaN-based light-emitting diodes.
Authors J.S. Park; J.H. Kim; J.Y. Kim; D.H. Kim; J.Y. Na; S.K. Kim; D. Kang; T.Y. Seong
Journal Nanotechnology
DOI 10.1088/1361-6528/28/4/045205
Abstract

Indium tin oxide (ITO) nanodots (NDs) were combined with Ag nanowires (Ag NWs) as a p-type electrode in near ultraviolet AlGaN-based light-emitting diodes (LEDs) to increase light output power. The Ag NWs were 30 ± 5 nm in diameter and 25 ± 5 ?m in length. The transmittance of 10 nm-thick ITO-only was 98% at 385 nm, while the values for ITO ND/Ag NW were 83%-88%. ITO ND/Ag NW films showed lower sheet resistances (32-51 ? sq(-1)) than the ITO-only film (950 ? sq(-1)). LEDs (chip size: 300 × 800 ?m(2)) fabricated using the ITO NDs/Ag NW electrodes exhibited higher forward-bias voltages (3.52-3.75 V at 20 mA) than the LEDs with the 10 nm-thick ITO-only electrode (3.5 V). The LEDs with ITO ND/Ag NW electrodes yielded a 24%-62% higher light output power (at 20 mA) than those with the 10 nm-thick ITO-only electrode. Furthermore, finite-difference time-domain (FDTD) simulations were performed to investigate the extraction efficiency. Based on the emission images and FDTD simulations, the enhanced light output with the ITO ND/Ag NW electrodes is attributed to improved current spreading and better extraction efficiency.

Citation J.S. Park; J.H. Kim; J.Y. Kim; D.H. Kim; J.Y. Na; S.K. Kim; D. Kang; T.Y. Seong.Formation of an indium tin oxide nanodot/Ag nanowire electrode as a current spreader for near ultraviolet AlGaN-based light-emitting diodes.. Nanotechnology. 2017;28(4):045205. doi:10.1088/1361-6528/28/4/045205

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