Gallium(III) Telluride Sputtering Target



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Product Code Available Product Forms Request A Quote
GA3-TE-02-ST (2N) 99% Gallium(III) Telluride Sputtering Target Request
GA3-TE-03-ST (3N) 99.9% Gallium(III) Telluride Sputtering Target Request
GA3-TE-04-ST (4N) 99.99% Gallium(III) Telluride Sputtering Target Request
GA3-TE-05-ST (5N) 99.999% Gallium Telluride Sputtering Target Request
GA3-TE-06-ST (6N) 99.9999% Gallium(III) Telluride Sputtering Target Request
GA3-TE-07-ST (7N) 99.99999% Gallium(III) Telluride Sputtering Target Request


Compound Formula Ga2Te3
Molecular Weight 522.3
Appearance cubic crystals
Melting Point 790° C (1,454° F)
Boiling Point N/A
Density 5.57 g/cm3
Exact Mass N/A
Monoisotopic Mass N/A
Charge N/A

Health & Safety Info  |  MSDS / SDS

Signal Word N/A
Hazard Statements N/A
Hazard Codes N/A
Risk Codes N/A
Safety Statements N/A
Transport Information N/A
Globally Harmonized System of Classification and Labelling (GHS) N/A


Telluride IonAmerican Elements specializes in producing high purity Gallium(III) Telluride Sputtering Targets with the highest possible density High Purity (99.99%) Gallium(III) Telluride Sputtering Targetand smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard Sputtering Targets for thin film are available monoblock or bonded with dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devices as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Research sized targets are also produced as well as custom sizes and alloys. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. We can also provide targets outside this range in addition to just about any size rectangular, annular, or oval target. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar, or plate form, as well as other machined shapes and through other processes nanoparticles.Other shapes are available by request.

Chemical Identifiers

Formula Ga2Te3
CAS 12024-27-0
Pubchem CID N/A
EC No. 234-690-1
Beilstein Registry No. N/A
SMILES [Ga+2].[TeH2-2]
InchI Identifier InChI=1S/Ga.Te.H/q+2;-2;

Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.

Related Products & Element Information

See more Gallium products. Gallium (atomic symbol: Ga, atomic number: 31) is a Block P, Group 13, Period 4 element with an atomic weight of 69.723.The number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electron configuration is [Ar] 3d10 4s2 4p1. The gallium atom has a radius of 122.1 pm and a Van der Waals radius of 187 pm. Gallium Bohr ModelGallium was predicted by Dmitri Mendeleev in 1871. It was first discovered and isolated by Lecoq de Boisbaudran in 1875. In its elemental form, gallium has a silvery appearance. Elemental GalliumGallium is one of three elements that occur naturally as a liquid at room temperature, the other two being mercury and cesium. Gallium does not exist as a free element in nature and is sourced commercially from bauxite and sphalerite. Currently, gallium is used in semiconductor devices for microelectronics and optics. The element name originates from the Latin word 'Gallia', the old name of France, and the word 'Gallus,' meaning rooster.

See more Tellurium products. Tellurium (atomic symbol: Te, atomic number: 52) is a Block P, Group 16, Period 5 element with an atomic radius of 127.60. Tellurium Bohr ModelThe number of electrons in each of tellurium's shells is 2, 8, 18, 18, 6 and its electron configuration is [Kr] 4d10 5s2 5p4. Tellurium was discovered by Franz Muller von Reichenstein in 1782 and first isolated by Martin Heinrich Klaproth in 1798. In its elemental form, tellurium has a silvery lustrous gray appearance.Elemental Tellurium The tellurium atom has a radius of 140 pm and a Van der Waals radius of 206 pm. Tellurium is most commonly sourced from the anode sludges produced as a byproduct of copper refining. The name Tellurium originates from the Greek word Tellus, meaning Earth.