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Hafnium Carbide Sputtering Target

CAS #: 12069-85-1
Linear Formula:
HfC
MDL Number
MFCD00016126
EC No.:
235-114-1

ORDER

Product Product Code ORDER SAFETY DATA Technical data
(2N) 99% Hafnium Carbide Sputtering Target HF-C-02-ST SDS > Data Sheet >
(3N) 99.9% Hafnium Carbide Sputtering Target HF-C-03-ST SDS > Data Sheet >
(4N) 99.99% Hafnium Carbide Sputtering Target HF-C-04-ST SDS > Data Sheet >
(5N) 99.999% Hafnium Carbide Sputtering Target HF-C-05-ST SDS > Data Sheet >
WHOLESALE/SKU 0000-742-{{nid}}

Hafnium Carbide Sputtering Target Properties (Theoretical)

Compound Formula CHf
Molecular Weight 190.5
Appearance black target
Melting Point 3,900° C (7,052° F)
Boiling Point N/A
Density 12.20 g/cm3
Solubility in H2O N/A
Exact Mass 191.946549
Monoisotopic Mass 191.946549

Hafnium Carbide Sputtering Target Health & Safety Information

Signal Word N/A
Hazard Statements N/A
Hazard Codes N/A
Risk Codes N/A
Safety Statements N/A
Transport Information N/A

About Hafnium Carbide Sputtering Target

American Elements specializes in producing high purity Hafnium Carbide Sputtering Targets with the highest possible density High Purity (99.99%) Metallic Sputtering Targetand smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard Sputtering Targets for thin film are available monoblock or bonded with planar target dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devices as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. We offer all shapes and configurations of targets compatible with all standard guns including circular, rectangular, annular, oval, "dog-bone," rotatable (rotary), multi-tiled and others in standard, custom, and research sized dimensions. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). "Sputtering"allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar, or plate form, as well as other machined shapes and through other processes such as nanoparticles and in the form of solutions and organometallics.

Synonyms

N/A

Chemical Identifiers

Linear Formula HfC
Pubchem CID 16212551
MDL Number MFCD00016126
EC No. 235-114-1
IUPAC Name methanidylidynehafnium(1+)
Beilstein/Reaxys No. N/A
SMILES [Hf+]#[C-]
InchI Identifier InChI=1S/C.Hf/q-1;+1
InchI Key NVDNLVYQHRUYJA-UHFFFAOYSA-N
Chemical Formula
Molecular Weight
Standard InchI
Appearance
Melting Point
Boiling Point
Density

Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Related Elements

See more Hafnium products. Hafnium (atomic symbol: Hf, atomic number: 72) is a Block D, Group 4, Period 6 element with an atomic weight of 178.49. Hafnium Bohr ModelThe number of electrons in each of Hafnium's shells is 2, 8, 18, 32, 10, 2 and its electron configuration is [Xe] 4f14 5d2 6s2. The hafnium atom has a radius of 159 pm and a Van der Waals radius of 212 pm. Hafnium was predicted by Dmitri Mendeleev in 1869 but it was not until 1922 that it was first isolated Dirk Coster and George de Hevesy. In its elemental form, hafnium has a lustrous silvery-gray appearance. Elemental HafniumHafnium does not exist as a free element in nature. It is found in zirconium compounds such as zircon. Hafnium is often a component of superalloys and circuits used in semiconductor device fabrication. Its name is derived from the Latin word Hafnia, meaning Copenhagen, where it was discovered.