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Hafnium Oxide Nanoparticle Dispersion

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Hafnium Oxide Nanoparticle Dispersion
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Hafnium Oxide Nanoparticle Dispersion Properties

Compound Formula


Molecular Weight




Melting Point

Varies by solvent

Boiling Point

Varies by solvent


Varies by solvent

Exact Mass

251.989 g/mol

Monoisotopic Mass

211.936329 Da

Hafnium Oxide Nanoparticle Dispersion Health & Safety Information

Signal Word N/A
Hazard Statements N/A
Hazard Codes N/A
Precautionary Statements N/A
Transport Information NONH
WGK Germany 3

About Hafnium Oxide Nanoparticle Dispersion

Hafnium Oxide Nanoparticle Dispersions are suspensions of hafnium oxide nanoparticles in water or various organic solvents such as ethanol or mineral oil. American Elements manufactures oxide nanopowders and nanoparticles with typical particle sizes ranging from 10 to 200nm and in coated and surface functionalized forms. Our nanodispersion and nanofluid experts can provide technical guidance for selecting the most appropriate particle size, solvent, and coating material for a given application. We can also produce custom nanomaterials tailored to the specific requirements of our customers upon request.

Hafnium Oxide Nanoparticle Dispersion Synonyms

Hafnium(IV) oxide, Hafnium dioxide, Diketohafnium, Dioxohafnium, Hafnium tetrahydrate, Hafnium hydroxide, Hafnia

Hafnium Oxide Nanoparticle Dispersion Chemical Identifiers

Linear Formula


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InchI Key


Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Related Elements

See more Hafnium products. Hafnium (atomic symbol: Hf, atomic number: 72) is a Block D, Group 4, Period 6 element with an atomic weight of 178.49. Hafnium Bohr ModelThe number of electrons in each of Hafnium's shells is 2, 8, 18, 32, 10, 2 and its electron configuration is [Xe] 4f14 5d2 6s2. The hafnium atom has a radius of 159 pm and a Van der Waals radius of 212 pm. Hafnium was predicted by Dmitri Mendeleev in 1869 but it was not until 1922 that it was first isolated Dirk Coster and George de Hevesy. In its elemental form, hafnium has a lustrous silvery-gray appearance. Elemental HafniumHafnium does not exist as a free element in nature. It is found in zirconium compounds such as zircon. Hafnium is often a component of superalloys and circuits used in semiconductor device fabrication. Its name is derived from the Latin word Hafnia, meaning Copenhagen, where it was discovered.

Recent Research

The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories., Rahaman, Sk Ziaur, De Lin Yu-, Lee Heng-Yuan, Chen Yu-Sheng, Chen Pang-Shiu, Chen Wei-Su, Hsu Chien-Hua, Tsai Kan-Hsueh, Tsai Ming-Jinn, and Wang Pei-Hua , Langmuir, 2017 May 16, Volume 33, Issue 19, p.4654-4665, (2017)

Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films., Shang, Jie, Xue Wuhong, Ji Zhenghui, Liu Gang, Niu Xuhong, Yi Xiaohui, Pan Liang, Zhan Qingfeng, Xu Xiao-Hong, and Li Run-Wei , Nanoscale, 2017 Jun 01, Volume 9, Issue 21, p.7037-7046, (2017)

Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition., Huang, Fei, Chen Xing, Liang Xiao, Qin Jun, Zhang Yan, Huang Taixing, Wang Zhuo, Peng Bo, Zhou Peiheng, Lu Haipeng, et al. , Phys Chem Chem Phys, 2017 Feb 01, Volume 19, Issue 5, p.3486-3497, (2017)

Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors., Mulaosmanovic, Halid, Ocker Johannes, Müller Stefan, Schroeder Uwe, Müller Johannes, Polakowski Patrick, Flachowsky Stefan, van Bentum Ralf, Mikolajick Thomas, and Slesazeck Stefan , ACS Appl Mater Interfaces, 2017 Feb 01, Volume 9, Issue 4, p.3792-3798, (2017)

The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition., Ding, Xingwei, Qin Cunping, Song Jiantao, Zhang Jianhua, Jiang Xueyin, and Zhang Zhilin , Nanoscale Res Lett, 2017 Dec, Volume 12, Issue 1, p.63, (2017)

In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO2/TiN Structure for CMOS Applications., Xu, Da-Peng, Yu Lin-Jie, Chen Xu-Dong, Chen Lin, Sun Qing-Qing, Zhu Hao, Lu Hong-Liang, Zhou Peng, Ding Shi-Jin, and Zhang David Wei , Nanoscale Res Lett, 2017 Dec, Volume 12, Issue 1, p.311, (2017)

Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System., Wang, Lai-Guo, Zhang Wei, Chen Yan, Cao Yan-Qiang, Li Ai-Dong, and Wu Di , Nanoscale Res Lett, 2017 Dec, Volume 12, Issue 1, p.65, (2017)

Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System., Zhang, Xiao-Ying, Hsu Chia-Hsun, Lien Shui-Yang, Chen Song-Yan, Huang Wei, Yang Chih-Hsiang, Kung Chung-Yuan, Zhu Wen-Zhang, Xiong Fei-Bing, and Meng Xian-Guo , Nanoscale Res Lett, 2017 Dec, Volume 12, Issue 1, p.324, (2017)

Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors., Zou, Xuming, Huang Chun-Wei, Wang Lifeng, Yin Long-Jing, Li Wenqing, Wang Jingli, Wu Bin, Liu Yunqi, Yao Qian, Jiang Changzhong, et al. , Adv Mater, 2016 Mar, Volume 28, Issue 10, p.2062-9, (2016)

Oxidation of phenyl and hydride ligands of bis(pentamethylcyclopentadienyl)hafnium derivatives by nitrous oxide via selective oxygen atom transfer reactions: insights from quantum chemistry calculations., Xie, Hujun, Liu Chengcheng, Yuan Ying, Zhou Tao, Fan Ting, Lei Qunfang, and Fang Wenjun , Dalton Trans, 2016 Jan 21, Volume 45, Issue 3, p.1152-9, (2016)


June 23, 2017
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