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Hafnium Silicide Sputtering Target

CAS #:

Linear Formula:

HfSi2

MDL Number:

N/A

EC No.:

235-640-1

ORDER

PRODUCT Product Code ORDER SAFETY DATA TECHNICAL DATA
(2N) 99% Hafnium Silicide Sputtering Target
HF-SID-02
Pricing > SDS > Data Sheet >
(3N) 99.9% Hafnium Silicide Sputtering Target
HF-SID-03
Pricing > SDS > Data Sheet >
(4N) 99.99% Hafnium Silicide Sputtering Target
HF-SID-04
Pricing > SDS > Data Sheet >
(5N) 99.999% Hafnium Silicide Sputtering Target
HF-SID-05
Pricing > SDS > Data Sheet >

Hafnium Silicide Sputtering Target Properties (Theoretical)

Compound Formula HfSi2
Molecular Weight 234.66
Appearance Target
Melting Point N/A
Boiling Point N/A
Density 7.6 g/cm3
Solubility in H2O N/A
Exact Mass 235.900402
Monoisotopic Mass 235.900402

Hafnium Silicide Sputtering Target Health & Safety Information

Signal Word N/A
Hazard Statements N/A
Hazard Codes N/A
Transport Information N/A
MSDS / SDS

About Hafnium Silicide Sputtering Target

High Purity (99.99%) Hafnium Silicide Sputtering TargetAmerican Elements specializes in producing high purity Hafnium Silicide Sputtering Targets with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard Sputtering Targets for thin film are available monoblock or bonded with planar target dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devices as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. We offer all shapes and configurations of targets compatible with all standard guns including circular, rectangular, annular, oval, "dog-bone," rotatable (rotary), multi-tiled and others in standard, custom, and research sized dimensions. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar, or plate form, as well as other machined shapes and through other processes such as nanoparticles and in the form of solutions and organometallics. We also produce Hafnium as disc, granules, ingot, pellets, pieces, powder, and rod. Other shapes are available by request.

Hafnium Silicide Sputtering Target Synonyms

N/A

Chemical Identifiers

Linear Formula HfSi2
MDL Number N/A
EC No. 235-640-1
Beilstein Registry No. N/A
Pubchem CID 11230071
IUPAC Name hafnium; silicon
SMILES [Hf].[SiH4].[SiH4]
InchI Identifier InChI=1S/Hf.2Si
InchI Key TWRSDLOICOIGRH-UHFFFAOYSA-N

Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Related Elements

See more Hafnium products. Hafnium (atomic symbol: Hf, atomic number: 72) is a Block D, Group 4, Period 6 element with an atomic weight of 178.49. Hafnium Bohr ModelThe number of electrons in each of Hafnium's shells is 2, 8, 18, 32, 10, 2 and its electron configuration is [Xe] 4f14 5d2 6s2. The hafnium atom has a radius of 159 pm and a Van der Waals radius of 212 pm. Hafnium was predicted by Dmitri Mendeleev in 1869 but it was not until 1922 that it was first isolated Dirk Coster and George de Hevesy. In its elemental form, hafnium has a lustrous silvery-gray appearance. Elemental HafniumHafnium does not exist as a free element in nature. It is found in zirconium compounds such as zircon. Hafnium is often a component of superalloys and circuits used in semiconductor device fabrication. Its name is derived from the Latin word Hafnia, meaning Copenhagen, where it was discovered.

See more Silicon products. Silicon (atomic symbol: Si, atomic number: 14) is a Block P, Group 14, Period 3 element with an atomic weight of 28.085. Silicon Bohr MoleculeThe number of electrons in each of Silicon's shells is 2, 8, 4 and its electron configuration is [Ne] 3s2 3p2. The silicon atom has a radius of 111 pm and a Van der Waals radius of 210 pm. Silicon was discovered and first isolated by Jöns Jacob Berzelius in 1823. Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The metalloid is rarely found in pure crystal form and is usually produced from the iron-silicon alloy ferrosilicon. Elemental SiliconSilica (or silicon dioxide), as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Ultra high purity silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics industry.The name Silicon originates from the Latin word silex which means flint or hard stone.

TODAY'S SCIENCE POST!

October 20, 2019
Los Angeles, CA
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