Skip to main content

Indium Arsenide Sputtering Target

CAS #: 1303-11-3
Linear Formula:
InAs
MDL Number
MFCD00016144
EC No.:
215-115-3

ORDER

Product Product Code ORDER SAFETY DATA Technical data
(2N) 99% Indium Arsenide Sputtering Target IN-AS-02-ST SDS > Data Sheet >
(2N5) 99.5% Indium Arsenide Sputtering Target IN-AS-025-ST SDS > Data Sheet >
(3N) 99.9% Indium Arsenide Sputtering Target IN-AS-03-ST SDS > Data Sheet >
(3N5) 99.95% Indium Arsenide Sputtering Target IN-AS-035-ST SDS > Data Sheet >
(4N) 99.99% Indium Arsenide Sputtering Target IN-AS-04-ST SDS > Data Sheet >
(5N) 99.999% Indium Arsenide Sputtering Target IN-AS-05-ST SDS > Data Sheet >
WHOLESALE/SKU 0000-742-12292

Indium Arsenide Sputtering Target Properties (Theoretical)

Compound Formula AsIn
Molecular Weight 189.74
Appearance Gray crystalline solid
Melting Point 936-942 °C
Boiling Point N/A
Density 5.67 g/cm3
Solubility in H2O Insoluble
Exact Mass 189.825474
Monoisotopic Mass 189.825474
Thermal Conductivity 0.27 W/cm·K (300 K)
Refractive Index n20/D 3.51
Crystal Phase / Structure Zincblende

Indium Arsenide Sputtering Target Health & Safety Information

Signal Word Danger
Hazard Statements H301-H331
Hazard Codes T
Precautionary Statements P261-P301+P310-P304+P340-P311a-P405-P501
Risk Codes N/A
Safety Statements N/A
Harmonized Tariff Code 2842.90
Transport Information UN 1557 6.1/PG III
GHS Pictogram
Image
Skull and Crossbones - GHS06

About Indium Arsenide Sputtering Target

American Elements specializes in producing high purity Indium Arsenide Sputtering Targets with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard Sputtering Targets for thin film are available monoblock or bonded with planar target dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devices as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Research sized targets are also produced as well as custom sizes and alloys. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or Arsenide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar, or plate form, as well as other machined shapes. We also produce Indium as disc, granules, ingot, pellets, pieces, powder, and rod. Other shapes are available by request.

Synonyms

Indium Monoarsenide; Arsinetriylindium(III); indiganylidynearsane

Chemical Identifiers

Linear Formula InAs
Pubchem CID 91500
MDL Number MFCD00016144
EC No. 215-115-3
IUPAC Name indiganylidynearsane
Beilstein/Reaxys No. N/A
SMILES [As]#[In]
InchI Identifier InChI=1S/As.In
InchI Key RPQDHPTXJYYUPQ-UHFFFAOYSA-N
Chemical Formula
Molecular Weight
Standard InchI
Appearance
Melting Point
Boiling Point
Density

Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Related Elements

See more Arsenic products. Arsenic (atomic symbol: As, atomic number: 33) is a Block P, Group 15, Period 4 element with an atomic radius of 74.92160. Arsenic Bohr ModelThe number of electrons in each of arsenic's shells is 2, 8, 18, 5 and its electron configuration is [Ar] 3d10 4s2 4p3. The arsenic atom has a radius of 119 pm and a Van der Waals radius of 185 pm. Arsenic was discovered in the early Bronze Age, circa 2500 BC. It was first isolated by Albertus Magnus in 1250 AD. In its elemental form, arsenic is a metallic grey, brittle, crystalline, semimetallic solid. Elemental ArsenicArsenic is found in numerous minerals including arsenolite (As2O3), arsenopyrite (FeAsS), loellingite (FeAs2), orpiment (As2S3), and realgar (As4S4). Arsenic has numerous applications as a semiconductor and other electronic applications as indium arsenide, silicon arsenide and tin arsenide. Arsenic is finding increasing uses as a doping agent in solid-state devices such as transistors.

See more Indium products. Indium (atomic symbol: In, atomic number: 49) is a Block P, Group 13, Period 5 element with an atomic weight of 114.818. The number of electrons in each of indium's shells is [2, 8, 18, 18, 3] and its electron configuration is [Kr] 4d10 5s2 5p1. The indium atom has a radius of 162.6 pm and a Van der Waals radius of 193 pm. Indium was discovered by Ferdinand Reich and Hieronymous Theodor Richter in 1863. Indium Bohr ModelIt is a relatively rare, extremely soft metal is a lustrous silvery gray and is both malleable and easily fusible. It has similar chemical properties to Elemental Indiumgallium such as a low melting point and the ability to wet glass. Fields such as optics and microelectronics that utilize semiconductor technology have wide uses for indium, especially in the form of Indiun Tin Oxide (ITO). Thin films of Copper Indium Gallium Selenide (CIGS) are used in high-performing solar cells. Indium's name is derived from the Latin word indicum, meaning violet.